Multiphysics Design and Analysis Simulations for Power Electronic Device Wirebonds

2003 ◽  
Author(s):  
Patrick W. Wilkerson ◽  
Andrzej J. Przekwas ◽  
Chung-Lung Chen
Keyword(s):  
Heat Dissipation ◽  
Electronic Device ◽  
Electronic Devices ◽  
Thermal Conditions ◽  
Simulation Software ◽  
Operating Conditions ◽  
Power Electronic ◽  
Stress Concentrations ◽  
Multiphysics Simulation ◽  
Multiphysics Simulations

Multiscale multiphysics simulations were performed to analyze wirebonds for power electronic devices. Modern power-electronic devices can be subjected to extreme electrical and thermal conditions. Fully coupled electro-thermo-mechanical simulations were performed utilizing CFDRC’s CFD-ACE+ multiphysics simulation software and scripting capabilities. Use of such integrated multiscale multiphysics simulation and design tools in the design process can cut cost, shorten product development cycle time, and result in optimal designs. The parametrically designed multiscale multiphysics simulations performed allowed for a streamlined parametric analysis of the electrical, thermal, and mechanical effects on the wirebond geometry, bonding sites and power electronic device geometry. Multiscale analysis allowed for full device thermo-mechanical analysis as well as detailed analysis of wirebond structures. The multiscale simulations were parametrically scripted allowing for parametric simulations of the device and wirebond geometry as well as all other simulation variables. Analysis of heat dissipation from heat generated in the power-electronic device and through Joule heating were analyzed. The multiphysics analysis allowed for investigation of the location and magnitude of stress concentrations in the wirebond and device. These stress concentrations are not only investigated for the deformed wirebond itself, but additionally at the wirebond bonding sites and contacts. Changes in the wirebond geometry and bonding geometry, easily changed through the parametrically designed simulation scripts, allows for investigation of various wirebond geometries and operating conditions.

Lifetime Model for the Fatigue Fracture in Cu/Al2O3/Cu Composites: Experimental Validation of a Substantial Lifetime Enhancement by Cu Step Etching

2020 ◽  
Vol 142 (2) ◽  
Author(s):  
Patrick Gaiser ◽  
Markus Klingler ◽  
Jürgen Wilde
Keyword(s):  
Fatigue Fracture ◽  
Crack Detection ◽  
Experimental Validation ◽  
Heat Dissipation ◽  
Electronic Devices ◽  
Power Device ◽  
Power Electronic ◽  
Fem Simulations ◽  
Detection Techniques ◽  
Lifetime Model

Abstract Direct bonded copper (DBC) alumina (Al2O3) substrates are used in power electronic devices in order to transfer the heat from semiconductor devices to the heat sink and to carry high electric currents. Fatigue-induced cracks in the ceramic result in a diminished heat dissipation, leading to failure of a power device. Hence, a lifetime model concerning this failure mode is necessary. In this paper, a new lifetime model including crack initiation as well as crack propagation for the fatigue fracture of Al2O3-based DBC substrates is presented. It is based on experimental crack detection techniques and finite element method (FEM) simulations including fracture mechanics. For the validation of the lifetime model, experiments are presented which show that by appropriate design of the copper edge, the lifetime of the substrates is increased substantially.

scholarly journals Harmonic Emissions of Power Electronic Devices Under Different Transmission Network Operating Conditions

2018 ◽  
Vol 54 (5) ◽  
pp. 5216-5226 ◽  
Author(s):  
Ambroz Bozicek ◽  
Jako Kilter ◽  
Tanel Sarnet ◽  
Igor Papic ◽  
Bostjan Blazic
Keyword(s):  
Electronic Devices ◽  
Operating Conditions ◽  
Transmission Network ◽  
Power Electronic

Nano Electronics: A New Era of Devices

2014 ◽  
Vol 222 ◽  
pp. 99-116 ◽  
Author(s):  
Inderpreet Kaur ◽  
Shriniwas Yadav ◽  
Sukhbir Singh ◽  
Vanish Kumar ◽  
Shweta Arora ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Electronic Properties ◽  
Communication Systems ◽  
Heat Dissipation ◽  
Electronic Device ◽  
Electronic Devices ◽  
Device Fabrication ◽  
Consumer Electronics ◽  
Capacitive Coupling ◽  
Circuit Components

The technical and economic growth of the twentieth century was marked by evolution of electronic devices and gadgets. The day-to-day lifestyle has been significantly affected by the advancement in communication systems, information systems and consumer electronics. The lifeline of progress has been the invention of the transistor and its dynamic up-gradation. Discovery of fabricating Integrated Circuits (IC’s) revolutionized the concept of electronic circuits. With advent of time the size of components decreased, which led to increase in component density. This trend of decreasing device size and denser integrated circuits is being limited by the current lithography techniques. Non-uniformity of doping, quantum mechanical tunneling of electrons from source to drain and leakage of electrons through gate oxide limit scaling down of devices. Heat dissipation and capacitive coupling between circuit components becomes significant with decreasing size of the components. Along with the intrinsic technical limitations, downscaling of devices to nanometer sizes leads to a change in the physical mechanisms controlling the charge propagation. To deal with this constraint, the search is on to look around for alternative materials for electronic device application and new methods for electronic device fabrication. Such material is comprised of organic molecules, proteins, carbon materials, DNA and the list is endless which can be grown in the laboratory. Many molecules show interesting electronic properties, which make them probable candidates for electronic device applications. The challenge is to interpret their electronic properties at nanoscale so as to exploit them for use in new generation electronic devices. Need to trim downsize and have a higher component density have ushered us into an era of nanoelectronics.

scholarly journals Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 680
Author(s):  
Cristina Medina-Bailon ◽  
Tapas Dutta ◽  
Ali Rezaei ◽  
Daniel Nagy ◽  
Fikru Adamu-Lema ◽  
...  
Keyword(s):  
Charge Transport ◽  
Semiconductor Device ◽  
Electronic Device ◽  
Semiconductor Devices ◽  
Electronic Devices ◽  
Cost Effective ◽  
Simulation Software ◽  
Electronic Simulation ◽  
Tcad Simulation ◽  
Quantum Mechanical Effects

The modeling of nano-electronic devices is a cost-effective approach for optimizing the semiconductor device performance and for guiding the fabrication technology. In this paper, we present the capabilities of the new flexible multi-scale nano TCAD simulation software called Nano-Electronic Simulation Software (NESS). NESS is designed to study the charge transport in contemporary and novel ultra-scaled semiconductor devices. In order to simulate the charge transport in such ultra-scaled devices with complex architectures and design, we have developed numerous simulation modules based on various simulation approaches. Currently, NESS contains a drift-diffusion, Kubo–Greenwood, and non-equilibrium Green’s function (NEGF) modules. All modules are numerical solvers which are implemented in the C++ programming language, and all of them are linked and solved self-consistently with the Poisson equation. Here, we have deployed some of those modules to showcase the capabilities of NESS to simulate advanced nano-scale semiconductor devices. The devices simulated in this paper are chosen to represent the current state-of-the-art and future technologies where quantum mechanical effects play an important role. Our examples include ultra-scaled nanowire transistors, tunnel transistors, resonant tunneling diodes, and negative capacitance transistors. Our results show that NESS is a robust, fast, and reliable simulation platform which can accurately predict and describe the underlying physics in novel ultra-scaled electronic devices.

scholarly journals A multi-channel cooling system for multiple heat source

2016 ◽  
Vol 20 (6) ◽  
pp. 1991-2000 ◽  
Author(s):  
Shanglong Xu ◽  
Weijie Wang ◽  
Zongkun Guo ◽  
Xinglong Hu ◽  
Wei Guo
Keyword(s):  
Heat Sink ◽  
Electronic Device ◽  
Cooling System ◽  
Electronic Devices ◽  
Heat Removal ◽  
Heat Sources ◽  
Power Electronic ◽  
Require Temperature ◽  
Computer Controlled ◽  
Temperature And Pressure

High-power electronic devices with multiple heating elements often require temperature uniformity and operating within their functional temperature range for optimal performance. A multi-channel cooling experiment apparatus is developed for studying heat removal inside an electronic device with multiple heat sources. It mainly consists of a computer-controlled pump, a multi-channel heat sink for multi-zone cooling and the apparatus for measuring the temperature and pressure drop. The experimental results show the system and the designed multi-channel heat sink structure can control temperature distribution of electronic device with multiple heat sources by altering coolant flow rate.

Large Area 4H SiC Products for Power Electronic Devices

2016 ◽  
Vol 858 ◽  
pp. 11-14 ◽  
Author(s):  
Ian Manning ◽  
Jie Zhang ◽  
Bernd Thomas ◽  
Edward Sanchez ◽  
Darren Hansen ◽  
...  
Keyword(s):  
Basal Plane ◽  
Electronic Device ◽  
Electronic Devices ◽  
Power Electronic ◽  
Quality Improvements ◽  
Large Area ◽  
Mean Values ◽  
Dislocation Densities ◽  
Basal Plane Dislocation ◽  
Device Applications

Efforts to develop 150 mm 4H SiC bare wafer and epitaxial substrates for power electronic device applications have resulted in quality improvements, such that key metrics match or outperform 100 mm substrates. Total dislocation densities and threading screw dislocation densities measured for 150 mm wafers were ~4100 cm-2 and ~100 cm-2, respectively, compared with values of ~5900 cm-2 and ~300 cm-2 measured for 100 mm wafers. While median basal plane dislocation counts in 150 mm samples exceed those of the smaller platform, a nearly 45% reduction was realized, resulting in a median density of ~3900 cm-2. Epilayers grown on 150 mm substrates likewise exhibit quality metrics that are comparable to 100 mm samples, with median thickness and doping sigma/mean values of 1.1% and 4.4%, respectively.

scholarly journals Dynamic modeling and transient stability analysis of distributed generators in a microgrid system

2021 ◽  
Vol 11 (5) ◽  
pp. 3692
Author(s):  
Hamed Ahmadi ◽  
Qobad Shafiee ◽  
Hassan Bevrani
Keyword(s):  
Power Systems ◽  
Distributed Generation ◽  
Transient Stability ◽  
Phase Plane ◽  
Dynamic Behaviour ◽  
Electronic Devices ◽  
Operating Conditions ◽  
Power Electronic ◽  
Distributed Generators ◽  
Transient Period

Increasing the penetration level of distributed generation units as well as power electronic devices adds more complexity and variability to the dynamic behaviour of the microgrids. For such systems, studying the transient modelling and stability is essential. One of the major disadvantages of most studies on microgrid modelling is their excessive attention to the steady state period and the lack of attention to microgrid performance during the transient period. In most of the research works, the behaviour of different microgrid loads has not been studied. One of the mechanisms of power systems stability studies is the application of state space modelling. This paper presents a mathematical model for connected inverters in microgrid systems with many variations of operating conditions. Nonlineal tools, phase-plane trajectory analysis, and Lyapunov method were employed to evaluate the limits of small signal models. Based on the results of the present study, applying the model allows for the analysis of the system when subjected to a severe transient disturbance such as loss of large load or generation. Studying the transient stability of microgrid systems in the standalone utility grid is useful and necessary for improving the design of the microgrid’s architecture.

scholarly journals Gyroton with the Corrugated Resonator

Plasma ◽  
2019 ◽  
Vol 2 (1) ◽  
pp. 1-13
Author(s):  
Stanislav Kolosov ◽  
Alexander Kurayev ◽  
Alexey Rak ◽  
Semen Kurkin ◽  
Artem Badarin ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electronic Device ◽  
Power Conversion ◽  
Electronic Devices ◽  
Circular Waveguide ◽  
Beam Power ◽  
Power Electronic ◽  
Microwave Electronic ◽  
New Type ◽  
Rectilinear Electron Beam

A new type of high-power electronic device—a gyroton with a corrugated resonator—is described and investigated. Spatial bunching of the electron beam does not occur in this device, however, highly efficient electron beam power conversion into the rotating electromagnetic field power is possible. The rectilinear electron beam deviates from the axis by the slow TM11 wave, then it gives up longitudinal energy to the same wave with more than 78% efficiency, and an output power up to 30 MW. The developed mathematical model of the interaction of the relativistic electron beam with an irregular circular waveguide and resonator fields presented in this article can be used to calculate and optimize the processes occurring in various microwave electronic devices, such as gyrotrons, gyrotons, TWT, Gyro-TWT, and BWT.

Fast Transient and Intensified Heat Dissipation Applicable to High Heat Flux Density

2011 ◽  
Author(s):  
Jing Li ◽  
Shuanshi Fan ◽  
Zemin Yao ◽  
Jing Li ◽  
Xinli Wei
Keyword(s):  
Heat Flux ◽  
Flux Density ◽  
Heat Flux Density ◽  
Heat Dissipation ◽  
Electronic Devices ◽  
Spray Cooling ◽  
High Heat ◽  
High Heat Flux ◽  
Power Electronic ◽  
Fast Transient

In this paper, in order to solve the problem of intensified heat dissipation in high power electronic devices, a fast transient and intensified heat dissipation technology was put forward by comparing many heat transfer modes based on the analytical study on the existing technologies about heat dissipation at high heat flux density and about fast heat transport. This technology combined spray cooling technology with fast endothermic chemical reaction processes; we summarized the characteristics of media applicable to an environment with transient high heat flux density by comparing various parameters of many sprayed media in the spray cooling process. According to the energy balance of endothermic chemical reactions of relevant media, we determined the media (mainly carbon dioxide hydrate) applicable to the fast transient and intensified heat dissipation technology and presented the conditions for the chemical reactions. We analyzed the methods controlling the instantaneous chemical reaction rate and proposed the structural characteristics of the chemical reactor so as to ensure that the time for heat removal will be control to around 0.01 second. Thus, the problem of fast transient heat dissipation in high power electronic devices, etc. would be radically solved.

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