Nano Electronics: A New Era of Devices

2014 ◽  
Vol 222 ◽  
pp. 99-116 ◽  
Author(s):  
Inderpreet Kaur ◽  
Shriniwas Yadav ◽  
Sukhbir Singh ◽  
Vanish Kumar ◽  
Shweta Arora ◽  
...  

The technical and economic growth of the twentieth century was marked by evolution of electronic devices and gadgets. The day-to-day lifestyle has been significantly affected by the advancement in communication systems, information systems and consumer electronics. The lifeline of progress has been the invention of the transistor and its dynamic up-gradation. Discovery of fabricating Integrated Circuits (IC’s) revolutionized the concept of electronic circuits. With advent of time the size of components decreased, which led to increase in component density. This trend of decreasing device size and denser integrated circuits is being limited by the current lithography techniques. Non-uniformity of doping, quantum mechanical tunneling of electrons from source to drain and leakage of electrons through gate oxide limit scaling down of devices. Heat dissipation and capacitive coupling between circuit components becomes significant with decreasing size of the components. Along with the intrinsic technical limitations, downscaling of devices to nanometer sizes leads to a change in the physical mechanisms controlling the charge propagation. To deal with this constraint, the search is on to look around for alternative materials for electronic device application and new methods for electronic device fabrication. Such material is comprised of organic molecules, proteins, carbon materials, DNA and the list is endless which can be grown in the laboratory. Many molecules show interesting electronic properties, which make them probable candidates for electronic device applications. The challenge is to interpret their electronic properties at nanoscale so as to exploit them for use in new generation electronic devices. Need to trim downsize and have a higher component density have ushered us into an era of nanoelectronics.

Author(s):  
Patrick W. Wilkerson ◽  
Andrzej J. Przekwas ◽  
Chung-Lung Chen

Multiscale multiphysics simulations were performed to analyze wirebonds for power electronic devices. Modern power-electronic devices can be subjected to extreme electrical and thermal conditions. Fully coupled electro-thermo-mechanical simulations were performed utilizing CFDRC’s CFD-ACE+ multiphysics simulation software and scripting capabilities. Use of such integrated multiscale multiphysics simulation and design tools in the design process can cut cost, shorten product development cycle time, and result in optimal designs. The parametrically designed multiscale multiphysics simulations performed allowed for a streamlined parametric analysis of the electrical, thermal, and mechanical effects on the wirebond geometry, bonding sites and power electronic device geometry. Multiscale analysis allowed for full device thermo-mechanical analysis as well as detailed analysis of wirebond structures. The multiscale simulations were parametrically scripted allowing for parametric simulations of the device and wirebond geometry as well as all other simulation variables. Analysis of heat dissipation from heat generated in the power-electronic device and through Joule heating were analyzed. The multiphysics analysis allowed for investigation of the location and magnitude of stress concentrations in the wirebond and device. These stress concentrations are not only investigated for the deformed wirebond itself, but additionally at the wirebond bonding sites and contacts. Changes in the wirebond geometry and bonding geometry, easily changed through the parametrically designed simulation scripts, allows for investigation of various wirebond geometries and operating conditions.


Polymers ◽  
2021 ◽  
Vol 13 (16) ◽  
pp. 2797 ◽  
Author(s):  
Hongli Zhang ◽  
Tiezhu Shi ◽  
Aijie Ma

The boosting of consumer electronics and 5G technology cause the continuous increment of the power density of electronic devices and lead to inevitable overheating problems, which reduces the operation efficiency and shortens the service life of electronic devices. Therefore, it is the primary task and a prerequisite to explore innovative material for meeting the requirement of high heat dissipation performance. In comparison with traditional thermal management material (e.g., ceramics and metals), the polymer-based thermal management material exhibit excellent mechanical, electrical insulation, chemical resistance and processing properties, and therefore is considered to be the most promising candidate to solve the heat dissipation problem. In this review, we summarized the recent advances of two typical polymer-based thermal management material including thermal-conduction thermal management material and thermal-storage thermal management material. Furtherly, the structural design, processing strategies and typical applications for two polymer-based thermal management materials were discussed. Finally, we proposed the challenges and prospects of the polymer-based thermal management material. This work presents new perspectives to develop advanced processing approaches and construction high-performance polymer-based thermal management material.


2019 ◽  
Vol 49 (1) ◽  
pp. 125-142
Author(s):  
Jacek Paś ◽  
Sławomir Buchla

Abstract The paper presents basic issues regarding the operation of the electronic device (ED). Electronic device - is a collection of packages (e.g. integrated circuits, processors, memories, etc.) and (or) passive and active electronic components (e.g. resistors, capacitors, transistors, diodes, etc.) that are related to each other in a functional way. By cooperating with each other, they implement a selected useful function that results from the purpose of a given device. The operation process includes technical, administrative and logistical tasks that are undertaken during the ED’s lifetime. The most important goal of all activities is to correctly perform all the functions useful for a given technical object, in this case the ED.


Author(s):  
S. Khadpe ◽  
R. Faryniak

The Scanning Electron Microscope (SEM) is an important tool in Thick Film Hybrid Microcircuits Manufacturing because of its large depth of focus and three dimensional capability. This paper discusses some of the important areas in which the SEM is used to monitor process control and component failure modes during the various stages of manufacture of a typical hybrid microcircuit.Figure 1 shows a thick film hybrid microcircuit used in a Motorola Paging Receiver. The circuit consists of thick film resistors and conductors screened and fired on a ceramic (aluminum oxide) substrate. Two integrated circuit dice are bonded to the conductors by means of conductive epoxy and electrical connections from each integrated circuit to the substrate are made by ultrasonically bonding 1 mil aluminum wires from the die pads to appropriate conductor pads on the substrate. In addition to the integrated circuits and the resistors, the circuit includes seven chip capacitors soldered onto the substrate. Some of the important considerations involved in the selection and reliability aspects of the hybrid circuit components are: (a) the quality of the substrate; (b) the surface structure of the thick film conductors; (c) the metallization characteristics of the integrated circuit; and (d) the quality of the wire bond interconnections.


Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.


2018 ◽  
Author(s):  
Srimanta Pakhira ◽  
Jose Mendoza-Cortes

<div>Covalent organic frameworks (COFs) have emerged as an important class of nano-porous crystalline materials with many potential applications. They are intriguing platforms for the design of porous skeletons with special functionality at the molecular level. However, despite their extraordinary properties, it is difficult to control their electronic properties, thus hindering the potential implementation in electronic devices. A new form of nanoporous material, COFs intercalated with first row transition metal is proposed to address this fundamental drawback - the lack of electronic tunability. Using first-principles calculations, we have designed 31 new COF materials <i>in-silico</i> by intercalating all of the first row transition metals (TMs) with boroxine-linked and triazine-linked COFs: COF-TM-x (where TM=Sc-Zn and x=3-5). This is a significant addition considering that only 187 experimentally COFs structures has been reported and characterized so far. We have investigated their structure and electronic properties. Specifically, we predict that COF's band gap and density of states (DOSs) can be controlled by intercalating first row transition metal atoms (TM: Sc - Zn) and fine tuned by the concentration of TMs. We also found that the $d$-subshell electron density of the TMs plays the main role in determining the electronic properties of the COFs. Thus intercalated-COFs provide a new strategy to control the electronic properties of materials within a porous network. This work opens up new avenues for the design of TM-intercalated materials with promising future applications in nanoporous electronic devices, where a high surface area coupled with fine-tuned electronic properties are desired.</div>


Author(s):  
Pei Y. Tsai ◽  
Junedong Lee ◽  
Paul Ronsheim ◽  
Lindsay Burns ◽  
Richard Murphy ◽  
...  

Abstract A stringent sampling plan is developed to monitor and improve the quality of 300mm SOI (silicon on insulator) starting wafers procured from the suppliers. The ultimate goal is to obtain the defect free wafers for device fabrication and increase yield and circuit performance of the semiconductor integrated circuits. This paper presents various characterization techniques for QC monitor and examples of the typical defects attributed to wafer manufacturing processes.


Author(s):  
Nicholas Randall ◽  
Rahul Premachandran Nair

Abstract With the growing complexity of integrated circuits (IC) comes the issue of quality control during the manufacturing process. In order to avoid late realization of design flaws which could be very expensive, the characterization of the mechanical properties of the IC components needs to be carried out in a more efficient and standardized manner. The effects of changes in the manufacturing process and materials used on the functioning and reliability of the final device also need to be addressed. Initial work on accurately determining several key mechanical properties of bonding pads, solder bumps and coatings using a combination of different methods and equipment has been summarized.


Author(s):  
A. A. Korneev

The article presents the results of the study of the filament modes of electronic lamps and ensuring the rational temperature of the cathode. A brief description and comparative analysis of existing methods with the proposed author are given. The dependence diagrams obtained as a result of a real experiment are presented. A new method of rational control of the electric vacuum devices (EVP) filament mode is proposed, thereby increasing the reliability and increasing the durability of the EVP during operation in high-quality and expensive complex technical systems. According to the results of the study, a new specialized electronic device was developed, which allowed to smoothly regulate the supply of the filament voltage, thereby ensuring the rational control of the operation of the EVP. The technique and specialized electronic device are developed on the basis of modern scientific and technical achievements. This made it possible to increase the reliability and efficiency of the electronic control system for solving critical tasks. When implementing the developed device, the problem of import substitution was solved.


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