Oxidation Kinetics of Nano Crystalline Tin Oxide Conductive Thin Films

2008 ◽  
Author(s):  
Mehmet Oguz Guler ◽  
Mirac Alaf ◽  
Deniz Gultekin ◽  
Hatem Akbulut ◽  
Ahmet Alp
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Oxidation Kinetics ◽  
Optical Transmittance ◽  
Transparent Conductor ◽  
Rutile Structure ◽  
Nano Crystalline ◽  
Type Semiconductor ◽  
Conductive Thin Films ◽  
Steel Substrates

Tin oxide was the first transparent conductor to have achieved significant commercialization. SnO2 is an n-type semiconductor with an optical band gap of about 3.6 eV in poly crystalline form. One of the main reasons for the wide use is its rather desirable characteristic of having both, high optical transmittance and high electrical conductivity. Under optimum deposition conditions, tin oxide crystallizes in the tetragonal (rutile) structure. In this study, nano crystalline thin oxide conductive thin films has been manufactured by thermal evaporation techniques onto steel substrates using metallic tin targets and oxidation kinetics have been studied after D.C. plasma oxidation by using XRD (X-Ray Diffraction). The activation energy of SnO and SnO2 from Sn phase transformations has also been studied.

Co-Doped Tin Oxide Thin Films by Spin Coating

2008 ◽  
Vol 368-372 ◽  
pp. 524-525 ◽  
Author(s):  
Jian Li ◽  
Shan Liu ◽  
Wei Pan
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Spin Coating ◽  
Magnetic Measurement ◽  
Optical Transmittance ◽  
Solubility Limit ◽  
Doping Content ◽  
Oxide Thin Films ◽  
Coating Method ◽  
Co Doped

Co-doped tin oxide thin films were prepared using spin-coating method. Variation of doping content on the magnetic property and optical property were measured. XRD and magnetic measurement shows that Co solubility limit in SnO2 is less than 3%. When the doping content is lower than 3%, the films show good optical transmittance. When the doping content is reached to 10%, the optical transmittance became lower. When the solution is diluted, the optical transmittance drops more slowly.

scholarly journals Optical Properties of Undoped and Indium-doped Tin Oxide Thin Films

2011 ◽  
Vol 35 (1) ◽  
pp. 99-111 ◽  
Author(s):  
Fatema Rezwana Chowdhury ◽  
Shamima Choudhury ◽  
Firoz Hasan ◽  
Tahmina Begum
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Tin Oxide ◽  
Optical Transmittance ◽  
Band Gap Energy ◽  
Visible Range ◽  
Absorption Region ◽  
Gap Energy ◽  
Glass Substrates ◽  
In Doping

Thin films of Tin Oxide (SnO2), having thickness of 200 nm, were formed on to glass substrates by thermal evaporation of high-purity SnO2 powder in vacuum at various substrate temperatures (TS), ranging between 25 and 200°C. SnO2 films with varying thickness were also prepared for a fixed TS = 100°C. Further, doping of SnO2 films with Indium (In) was accomplished through solid state diffusion process by successive deposition of SnO2 and In films and subsequent annealing at 200°C for 10 minutes. Both undoped and doped films were characterized optically by UV-VIS-NIR spectrophotometry in the photon wavelength ranging from 300 to 2500 nm. In the visible photon wavelength range, the average optical transmittance (T%) of the films with varying TS was found to be 85%. The maximum value of T % was found to be 89 % around the wavelength of 700nm. The variation of absorption coefficient with photon energy in the fundamental absorption region is the steepest for TS = 100°C. The sub-band gap (SBG) absorption is also minimum for this Ts. A fluctuating behavior of the band gap energy (Eg) with Ts is observed attaining the highest value of 3.59 eV for Ts = 100°C. The band gap energy increases with thickness but T% in the visible range decreases. The T% in the visible range varies inversely with indium doping, being highest for undoped films. The Eg increases upto 2 wt% In doping and gradually decreases for enhanced doping. It seems reasonable to conclude that In doping does not bring favorable optical characteristics. Undoped SnO2 films having thickness of 200 nm and formed at substrate temperature of 100°C yield essential acceptable properties for photovoltaic applications.DOI: http://dx.doi.org/10.3329/jbas.v35i1.7975Journal of Bangladesh Academy of Sciences, Vol.35, No.1, 99-111, 2011

Thin Films of Antimony-Tin Oxide as Counter-Electrodes for Proton Working Electrochromic Devices

2001 ◽  
Vol 692 ◽  
Author(s):  
N. Naghavi ◽  
C. Marcel ◽  
L. Dupont ◽  
A. Rougier ◽  
J-M. Tarascon
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Optical Transmittance ◽  
Ex Situ ◽  
Visible Range ◽  
Electrochromic Devices ◽  
Counter Electrodes ◽  
Transmission Electron ◽  
Wide Range ◽  
Antimony Tin Oxide

AbstractWe report here on thin films proton-working electrochromic devices based on the wellknown tungsten oxide as the coloring electrode, and Antimony Tin Oxide (ATO) as the ionstorage counter-electrode. We show that films deposited by Pulsed Laser Deposition (PLD) technique have an apparent Sb solubility up to 70 at %, and exhibit unusual electrochromic properties. Through potentiostatic tests we'll demonstrate that depending on the composition which influences film morphology, the Sn-Sb-O films could either present a faradic or a capacitive-like behavior, associated to a color or a neutral switching over a wide range of potentials, respectively. The structural properties of ATO films are characterized by X-ray diffraction and transmission electron microscopy (TEM). Electrochromic behavior is studied by means of cyclic voltamperometry coupled with ex situ optical transmittance measurements in the visible range. The maximum proton-storage capacity is observed for ATO films containing 40–50 at % Sb, while being quasi-neutral when switching over a wide range of potentials. These compositions are finally retained for the assembly of our WO3/proton-electrolyte/ATO devices, whose performances are reported.

Cadmium-Tin Oxide Transparent Conductive Thin Films

1986 ◽  
Author(s):  
T Stapinski ◽  
E Leja ◽  
K Marszalek
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Conductive Thin Films

scholarly journals Nanostructural Characterisation and Optical Properties of Sputter-Deposited Thick Indium Tin Oxide (ITO) Coatings

Coatings ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1127
Author(s):  
Andrius Subacius ◽  
Bill Baloukas ◽  
Etienne Bousser ◽  
Steve J. Hinder ◽  
Mark A. Baker ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Nanocrystalline Structure ◽  
Optical Transmittance ◽  
Glass Substrates ◽  
Ito Thin Films ◽  
Sputter Deposited ◽  
Thick Coatings

Indium tin oxide (ITO) thin films, used in many optoelectronic applications, are typically grown to a thickness of a maximum of a few hundred nanometres. In this work, the composition, microstructure and optical/electrical properties of thick ITO coatings deposited by radio frequency magnetron sputtering from a ceramic ITO target in an Ar/O2 gas mixture (total O2 flow of 1%) on unheated glass substrates are reported for the first time. In contrast to the commonly observed (200) or (400) preferential orientations in ITO thin films, the approximately 3.3 μm thick coatings display a (622) preferential orientation. The ITO coatings exhibit a purely nanocrystalline structure and show good electrical and optical properties, such as an electrical resistivity of 1.3 × 10−1 Ω·cm, optical transmittance at 550 nm of ~60% and optical band gap of 2.9 eV. The initial results presented here are expected to provide useful information for future studies on the synthesis of high-quality thick ITO coatings.

scholarly journals The Optimum Fabrication Condition of p-Type Antimony Tin Oxide Thin Films Prepared by DC Magnetron Sputtering

2016 ◽  
Vol 2016 ◽  
pp. 1-11 ◽  
Author(s):  
Huu Phuc Dang ◽  
Quang Ho Luc ◽  
Tran Le ◽  
Van Hieu Le
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Hole Concentration ◽  
Dc Magnetron Sputtering ◽  
Rutile Structure ◽  
X Ray ◽  
P Type ◽  
Deposited Films

Transparent Sb-doped tin oxide (ATO) thin films were fabricated on quartz glass substrates via a mixed (SnO2+ Sb2O3) ceramic target using direct current (DC) magnetron sputtering in ambient Ar gas at a working pressure of 2 × 10−3 torr. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall-effect, and UV-vis spectra measurements were performed to characterize the deposited films. The substrate temperature of the films was investigated in two ways: (1) films were annealed in Ar ambient gas after being deposited at room temperature or (2) they were deposited directly at different temperatures. The first process for fabricating the ATO films was found to be easier than the second process. The deposited films showed p-type electrical properties, a polycrystalline tetragonal rutile structure, and their average transmittance was greater than 80% in the visible light range at the optimum annealing temperature of 500°C. The best electrical properties of the film were obtained on a 10 wt% Sb2O3-doped SnO2target with a resistivity, hole concentration, and Hall mobility of 0.55 Ω·cm, 1.2 × 1019 cm−3, and 0.54 cm2V−1s−1, respectively.

SUPERCAPACITOR BEHAVIOR OF SPRAY DEPOSITED SnO2 THIN FILMS

2011 ◽  
Vol 10 (06) ◽  
pp. 1245-1248 ◽  
Author(s):  
S. VIJAYAKUMAR ◽  
S. NAGAMUTHU ◽  
K. K. PURUSHOTHAMAN ◽  
M. DHANASHANKAR ◽  
G. MURALIDHARAN
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Sem Analysis ◽  
Morphological Properties ◽  
Spray Pyrolysis Method ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
Rutile Structure ◽  
Electrochemical Tests ◽  
Sem Image

Tin oxide thin films were prepared via spray pyrolysis method. The structural and morphological properties of SnO2 thin films have been investigated using X-ray diffraction (XRD) and scanned electron microscope (SEM) analysis. The XRD pattern confirms the tetragonal rutile structure of SnO2 with preferential orientation along (200) plane. SEM image reveals the nanocrystalline nature of the SnO2 films. SnO2 thin films were subjected to electrochemical tests to study the supercapacitor behavior. Maximum specific capacitance of 168 F/g at a scan rate of 25 mV/s was obtained using 0.5 M KOH as the electrolyte. This is the highest value ever reported for spray deposited tin oxide thin films.

scholarly journals Effects of Water Concentration on the Structural and Optical Properties of FTO Thin Films Grown by Home Made SISOM’S SPEED Technique

2017 ◽  
Author(s):  
Ayodeji Oladiran Awodugba ◽  
Gbadebo Taofeek Yusuf
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Quartz Substrate ◽  
Dye Sensitized Solar Cells ◽  
Water Concentration ◽  
Precursor Solution ◽  
Optical Transmittance ◽  
Deposition Condition ◽  
Vis Spectroscopy

Influence of water concentration on the properties of fluorine-doped tin oxide (FTO) thin films was systematically studied in this work. Home made SISOM’s SPEED techniques and its chemical formulation was employed to grow the FTO on quartz substrate. Water concentration in the precursor solution was varied from 0, 0.5, 1.0 and 1.5 mol %. The structural, optical, and electrical properties of the films were studied under these deposition conditions. The results show that the properties of the films varied significantly with water concentration. Scanning electron microscopy (SEM) revealed FTO films whose grain size and uniformity increases significantly with increase in water concentration. The structure of the films was measured by X-ray diffraction (XRD) measurement. It shows polycrystalline films with (110), (101), (200), (211) and (220) orientation; the strength increases as water concentration increases. The optical transmission was determined by UV-Vis spectroscopy at 380–780 nm UV-VIS regions. The optical transmittance varies with water concentration with an average of 84%. The electrical property, measured by Hall Effect revealed n-type semiconductor. The films have the following properties: resistivity, 15 × 10-4Ω cm; carrier concentration, 18.7 × 1019 cm-3 and mobility of 21.86 cm2 V-1 s-1. The average figure of merit, φ of the FTO film is 1.25. Optimum deposition condition was established after series of experiments and was found to be 1.5% water concentration at 460oC substrate temperature. The FTO films deposited in this work could be a promising replacement to indium tin oxide (ITO) especially in dye-sensitized solar cells.

scholarly journals Characterization of Aluminum-doped SnO2 thin films obtained by spray pyrolysis method

2020 ◽  
Vol 5 (4) ◽  
pp. 220-223
Author(s):  
Hocine Sefardjella ◽  
Abdennour Kabir ◽  
Bouzid Boudjema ◽  
Athmen Benhaoua
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Tin Oxide ◽  
Band Gap Energy ◽  
Visible Range ◽  
Spray Pyrolysis Method ◽  
Electrical Measurements ◽  
Rutile Structure ◽  
Al Content ◽  
Pyrolysis Method

Aluminum doped tin oxide SnO2: Al thin films were deposited on glass substrates using spray pyrolysis method. The deposited films are a polycrystalline with a tetragonal rutile structure. The variation of lattice parameters a and c decreases as a function of Al concentration due to ionic radius of (Sn=0.71Å) and (Al=0.51Å).Crystallites sizes varied between 29.25 and 32.80 nm. Al the samples have a transmission raised between 92 and 95% in the visible range. The optical band gap energy was found to vary in the range of 3.68 - 3.85eV. Electrical measurements revealed the increase of the electrical conductivity with Al content and show a maximum at 2% of the doping and then decreases due to decrease of the grain size. Following this study we can conclude that the Aluminum doped tin oxide developed by this technique can be used in gas sensors and photovoltaic cells.

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