Filamentary bipolar electric pulse induced resistance switching in amorphous silicon resistive random access memory

2015 ◽  
Vol 33 (3) ◽  
pp. 032205 ◽  
Author(s):  
Rabi Ebrahim ◽  
Ramasahayam Mithun Kumar ◽  
Nacer Badi ◽  
Naijuan Wu ◽  
Alex Ignatiev
Keyword(s):  
Amorphous Silicon ◽  
Induced Resistance ◽  
Electric Pulse ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Resistance Switching ◽  
Access Memory

Correlation Between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory

2010 ◽  
Vol 1250 ◽  
Author(s):  
Yusuke Nishi ◽  
Tatsuya Iwata ◽  
Tsunenobu Kimoto
Keyword(s):  
Thin Films ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Resistance Switching ◽  
Admittance Spectroscopy ◽  
Low Oxygen ◽  
Access Memory ◽  
Switching Operation ◽  
Defect Levels

AbstractAdmittance spectroscopy measurement has been performed on NiOx thin films with various oxygen compositions (x=1.0-1.2) in order to characterize localized defect levels. The activation energy and concentration of localized defect levels in NiOx films with low oxygen composition (x≤1.07) are 120-170 meV and lower than 2×1019 cm-3, respectively. From I-V measurement of the Pt/NiOx/Pt structures, samples with high oxygen composition (x≥1.10) did not show resistance switching operation, while samples with low oxygen composition (x≤1.07) did. The best oxygen composition of NiOx thin films turned out to be 1.07 in order to realize repeatable and stable resistance switching operation.

scholarly journals Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory

2013 ◽  
Vol 533 ◽  
pp. 19-23 ◽  
Author(s):  
T. Cabout ◽  
J. Buckley ◽  
C. Cagli ◽  
V. Jousseaume ◽  
J.-F. Nodin ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Resistance Switching ◽  
Access Memory ◽  
Pt Electrodes

EFFECTS OF TiOx INTERLAYER ON RESISTANCE SWITCHING OF Pt/TiOx/ZnO/n+-Si STRUCTURES

2014 ◽  
Vol 21 (05) ◽  
pp. 1450061 ◽  
Author(s):  
HONGXIA LI ◽  
XIAOJUN LV ◽  
JUNHUA XI ◽  
XIN WU ◽  
QINAN MAO ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Resistance Switching ◽  
Zno Thin Film ◽  
Access Memory ◽  
Ohmic Behavior ◽  
Resistance State ◽  
Different Thickness ◽  
Limited Conduction

In this paper, we fabricated Pt / TiO x/ ZnO / n +- Si structures by inserting TiO x interlayer between Pt top electrode (TE) and ZnO thin film for non-volatile resistive random access memory (ReRAM) applications. Effects of TiO x interlayer with different thickness on the resistance switching of Pt / TiO x/ ZnO / n +- Si structures were investigated. Conduction behaviors in high and low resistance state (HRS and LRS) fit well with the trap-controlled space-charge-limited conduction (SCLC) and Ohmic behavior, respectively. Variations of set and reset voltages and HRS and LRS resistances of Pt / TiO x/ ZnO / n +- Si structures were investigated as a function of TiO x thickness. Switching cycling tests were attempted to evaluate the endurance reliability of Pt / TiO x/ ZnO / n +- Si structures. Additionally, the switching mechanism was analyzed by the filament model.

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

First-principles study of resistive random access memory based on single-layer black phosphorous resistive layer

2020 ◽  
Vol 128 (21) ◽  
pp. 215702
Author(s):  
Yuehua Dai ◽  
Jianhua Gao ◽  
Lihua Huang ◽  
Renjie Ding ◽  
Peng Wang ◽  
...  
Keyword(s):  
First Principles ◽  
Random Access ◽  
Single Layer ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Resistive Layer ◽  
First Principles Study ◽  
Black Phosphorous
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