Electron beam injection from a hollow cathode plasma into a downstream reactive environment: Characterization of secondary plasma production and Si3N4 and Si etching

ABSTRACTUsing a novel hollow cathode plasma-jet reactive sputtering system in which an intense plasma, ignited in an Ar/H2 flow, is directed through silicon and germanium nozzles, a series of a-SiGe:H thin films have been prepared on silicon and glass substrates. These films have been optically characterized by infrared (IR) spectroscopy and spectroscopic ellipsometry (335-1000nm). Total hydrogen concentrations, as determined by FTIR, varied with deposition conditions and ranged from 2.5 × 1021 to 1.6 × 1022 atom cm−3 and correlated with secondary ion mass spectrometry (SIMS) elemental analyses to within 10%. Conductivity measurements in the dark and under simulated AM1 solar illumination have indicated that the films properties are very good. The light to dark conductivity ratio has consistently been greater than 1000 for films with band gaps down to 1.3 eV.

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Characterization of a hydrogen hollow cathode plasma by two-photon polarization spectroscopy

10.1063/1.1370627 ◽

2001 ◽

Cited By ~ 1

Author(s):

Ana B. Gonzalo

Keyword(s):

Hollow Cathode ◽

Photon Polarization ◽

Cathode Plasma ◽

Polarization Spectroscopy ◽

Two Photon

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Etching of Si3N4 induced by electron beam plasma from hollow cathode plasma in a downstream reactive environment

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.5143538 ◽

2020 ◽

Vol 38 (3) ◽

pp. 032208

Author(s):

Chen Li ◽

Thorsten Hofmann ◽

Klaus Edinger ◽

Valery Godyak ◽

Gottlieb S. Oehrlein

Keyword(s):

Electron Beam ◽

Hollow Cathode ◽

Cathode Plasma ◽

Beam Plasma ◽

Electron Beam Plasma

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Characterization of TiO film prepared by plasma enhanced chemical vapor deposition using a multi-jet hollow cathode plasma source

Applied Surface Science ◽

10.1016/s0169-4332(01)00140-4 ◽

2001 ◽

Vol 175-176 ◽

pp. 697-702 ◽

Cited By ~ 24

Author(s):

Masatoshi Nakamura ◽

Dariusz Korzec ◽

Toru Aoki ◽

Jurgen Engemann ◽

Yoshinori Hatanaka

Keyword(s):

Chemical Vapor Deposition ◽

Hollow Cathode ◽

Vapor Deposition ◽

Chemical Vapor ◽

Plasma Source ◽

Cathode Plasma

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Development and characterization of micromachined hollow cathode plasma display devices

Journal of Microelectromechanical Systems ◽

10.1109/jmems.2002.802907 ◽

2002 ◽

Vol 11 (5) ◽

pp. 536-543 ◽

Cited By ~ 31

Author(s):

Jack Chen ◽

Sung-Jin Park ◽

Zhifang Fan ◽

J.G. Eden ◽

Chang Liu

Keyword(s):

Hollow Cathode ◽

Cathode Plasma ◽

Display Devices ◽

Plasma Display

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Automated Control of Plasma Ion-Assisted Electron Beam-Deposited TiO2 Optical Thin Films

Coatings ◽

10.3390/coatings8080272 ◽

2018 ◽

Vol 8 (8) ◽

pp. 272

Author(s):

Bing Hui ◽

Xiuhua Fu ◽

Des Gibson ◽

David Child ◽

Shigeng Song ◽

...

Keyword(s):

Refractive Index ◽

Electron Beam ◽

Current Density ◽

Hollow Cathode ◽

Plasma Source ◽

Ion Current ◽

Independent Control ◽

Cathode Plasma ◽

Ion Energy ◽

Ion Current Density

A hollow cathode plasma source has been operated automatically, demonstrating independent control of plasma ion energy and ion current density for plasma ion-assisted electron beam-deposited titania (TiO2). The lanthanum hexaboride hollow cathode design described in this work utilizes both the interior and exterior cathode surfaces, with the additional electrons generated removing the need for a separate neutralizing source. Automatic feedback control of plasma source cathode-to-anode accelerator voltage (AV—via argon gas flow to the anode and/or cathode plasma source areas) and accelerator current (AC—via an external high-current power supply) provides independent control of the ion energy distribution function and ion current density, respectively. Automated run-to-run reproducibility (over six separate deposition runs) in TiO2 refractive index (550 nm) was demonstrated as 2.416 ± 0.008 (spread quoted as one standard deviation), which is well within the required refractive index control for optical coating applications. Variation in refractive index is achievable through control of AV (ion energy) and/or AC (ion current density), directly influencing deposited TiO2 structural phase. Measured dependencies of TiO2 refractive index and extinction coefficient on AV and AC are described. Optimum plasma source parameters for assisted electron beam deposition of TiO2 optical thin-film applications are highlighted.

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