Epitaxial Growth of High-Quality Silicon Carbide: Fundamentals and Recent Progress

2003 ◽  
pp. 12-54
1987 ◽  
Vol 97 ◽  
Author(s):  
J. Anthony Powell

ABSTRACTSilicon carbide (SiC), with a favorable combination of semiconducting and refractory properties, has long been a candidate for high temperature semiconductor applications. Research on processes for producing the needed large-area high quality single crystals has proceeded sporadically for many years. Two characteristics of SiC have aggravated the problem of its crystal growth. First, it cannot be melted at any reasonable pressure, and second, it forms many different crystalline structures, called polytypes. Recent progress in the development of two crystal growth processes will be described. These processes are the modified Lely process for the growth of the alpha polytypes (e.g. 6H SiC), and a process for the epitaxial growth of the beta polytype (i.e. 3C or cubic SiC) on single crystal silicon substrates. A discussion of the semiconducting qualities of crystals grown by various techniques will also be included.


2014 ◽  
Vol 2 (44) ◽  
pp. 9342-9358 ◽  
Author(s):  
Wenliang Wang ◽  
Weijia Yang ◽  
Haiyan Wang ◽  
Guoqiang Li

The unconventional oxide substrates have been used for the growth of high-quality GaN films due to their relatively small lattice and thermal expansion coefficient mismatches with GaN. This review focuses on the recent progress and discusses the perspectives of the epitaxial growth of GaN films on unconventional oxide substrates.


2016 ◽  
Vol 858 ◽  
pp. 159-162 ◽  
Author(s):  
Ruggero Anzalone ◽  
Nicolò Piluso ◽  
Riccardo Reitano ◽  
Alessandra Alberti ◽  
Patrick Fiorenza ◽  
...  

A study of the carbonization process and of a low temperature buffer layer on the Cubic Silicon Carbide (3C-SiC) epitaxial growth has been reported in this work. From this study it has been evidenced the importance of the C/H2 ratio and of the buffer layer process on the voids formation at the 3C-SiC/Si interface. From our study, the influence of the voids the wafer curvature is highlighted. It has been observed that decreasing the density of these voids, decreases the stress of the 3C-SiC film; consequently, the wafer curvature is reduced.


Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 788
Author(s):  
Jian-Huan Wang ◽  
Ting Wang ◽  
Jian-Jun Zhang

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.


Physics ◽  
2021 ◽  
Vol 3 (2) ◽  
pp. 320-351
Author(s):  
Serge Nagorny

Recent progress in Cs2HfCl6 (CHC) crystal production achieved within the last five years is presented. Various aspects have been analyzed, including the chemical purity of raw materials, purification methods, optimization of the growth and thermal conditions, crystal characterization, defect structure, and internal radioactive background. Large volume, crack-free, and high quality CHC crystals with an ultimate scintillating performance were produced as a result of such extensive research and development (R & D) program. For example, the CHC crystal sample with dimensions ∅23 × 30 mm3 demonstrates energy resolution of 3.2% FWHM at 662 keV, the relative light output at the level of 30,000 ph/MeV and excellent linearity down to 20 keV. Additionally, this material exhibits excellent pulse shape discrimination ability and low internal background of less than 1 Bq/kg. Furthermore, attempts to produce a high quality CHC crystal resulted in research on this material optimization by constitution of either alkali ions (Cs to Tl), or main element (Hf to Zr), or halogen ions (Cl to Br, I, or their mixture in different ratio), as well as doping with various active ions (Te4+, Ce3+, Eu3+, etc.). This leads to a range of new established scintillating materials, such as Tl2HfCl6, Tl2ZrCl6, Cs2HfCl4Br2, Cs2HfCl3Br3, Cs2ZrCl6, and Cs2HfI6. To exploit the whole potential of these compounds, detailed studies of the material’s fundamental properties, and understanding of the variety of the luminescence mechanisms are required. This will help to understand the origin of the high light yield and possible paths to further extend it. Perspectives of CHC crystals and related materials as detectors for rare nuclear processes are also discussed.


2017 ◽  
Author(s):  
Hajime Fujikura ◽  
Takehiro Yoshida ◽  
Masatomo Shibata ◽  
Yohei Otoki
Keyword(s):  

2006 ◽  
Vol 527-529 ◽  
pp. 299-302
Author(s):  
Hideki Shimizu ◽  
Yosuke Aoyama

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).


SmartMat ◽  
2021 ◽  
Author(s):  
Yihe Wang ◽  
Shuo Sun ◽  
Jialin Zhang ◽  
Yu Li Huang ◽  
Wei Chen

1991 ◽  
Vol 237 ◽  
Author(s):  
Harry A. Atwater ◽  
C. J. Tsai ◽  
S. Nikzad ◽  
M.V.R. Murty

ABSTRACTRecent progress in low energy ion-surface interactions, and the early stages of ion-assisted epitaxy of semiconductor thin films is described. Advances in three areas are discussed: dynamics of displacements and defect incorporation, nucleation mechanisms, and the use of ion bombardment to modify epitaxial growth kinetics in atrulysurface-selective manner.


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