The use of laser printers for obtaining photomasks for the photolithography process

Author(s):  
Kazimierz Gut ◽  
Sebastian Student
2020 ◽  
Vol 96 (3s) ◽  
pp. 756-757
Author(s):  
Е.С. Шамин ◽  
Е.Л. Харченко

Данная работа посвящена описанию возможного алгоритма создания моделей резиста с постоянным порогом и расчета окон процесса на их основе. Приведенные изыскания реализованы в виде программного средства, использующего средства моделирования фотолитографии Mentor Graphics Calibre. This work is dedicated to the description of one of possible algorithms of constant threshold resist model generation used for photolithography process window calculation. This algorithm has been realized in the form of a program using Mentor Graphics Calibre modeling tools.


Micromachines ◽  
2020 ◽  
Vol 12 (1) ◽  
pp. 10
Author(s):  
Alexander Kukaev ◽  
Dmitry Lukyanov ◽  
Denis Mikhailenko ◽  
Daniil Safronov ◽  
Sergey Shevchenko ◽  
...  

Originally, sensors based on surface acoustic waves are fabricated using photolithography, which becomes extremely expensive when a small series or even single elements are needed for the research. A laser thin film local evaporation technique is proposed to substitute the photolithography process in the production of surface acoustic wave based inertial sensors prototypes. To estimate its potential a prototype of a surface acoustic wave gyroscope sensing element was fabricated and tested. Its was shown that the frequency mismatch is no more than 1%, but dispersion of the wave on small inertial masses leads to a spurious parasitic signal on receiving electrodes. Possible ways of its neglecting is discussed.


2013 ◽  
Vol 562-565 ◽  
pp. 1224-1228
Author(s):  
Marina Ashmkhan ◽  
Jing Liu ◽  
Bo Wang ◽  
Fu Ting Yi

Silicon nano pin arrays with heights of 1.3-3.66um and diameter of 315-899nm, are fabricated by CsCl self-assemble for CsCl nano islands for mask and ICP etching for silicon pins. CsCl film is firstly deposited on the wafer by thermal evaporation and putted in the humid controlled environment to be developed to the CsCl islands with diameter of 341-915 nm as self-assembled technology. Then the ICP etching with SF6, CCl4, He gas is introduced to make the silicon nano pin by the mask of CsCl nano islands, and the silicon nano pins with the different height of 1.3-3.66 um are finished for field emission. The gated FEA templates are fabricated by photolithography process and the lift-off technology with Ti-Si film as the gate electrodes. The final template for field emission has the silicon nano pins with diameters of 31.7 nm on top, Ti-Ag film with thickness of 105nm and gate holes of 30um in diameter, and SU8 resist insulator structure with thickness of 4um and holes of 10um in diameter. The optimization of the fabrication process and the performance for the configuration will be made.


2011 ◽  
Vol 204-210 ◽  
pp. 152-155
Author(s):  
Chao Wu ◽  
Wen Jie Zhang

Carbon nanotubes (CNTs) had good field emission ability and were adopted to form the cold cathode. The backlight field emission unit (BFEU) with CNTs as field emitter was designed and fabricated, and the detailed manufacture process was also given. The flat soda-lime glass was used as substrate plate. With the photolithography process, the indium tin oxide thin film covered on the cathode plate surface was divided into bar stripes to form the meshy bottom electrode for improving the field emission properties of CNT emitters. The sealed BFEU demonstrated better field emission performance, high luminance brightness. With the simple fabrication process, the total manufacture cost was also low.


2021 ◽  
Vol 241 ◽  
pp. 111545
Author(s):  
Howard Northfield ◽  
Oleksiy Krupin ◽  
R. Niall Tait ◽  
Pierre Berini

2021 ◽  
Vol 13 (4) ◽  
pp. 624-631
Author(s):  
Jianyao Lin ◽  
Yu Chen ◽  
Yun Ye ◽  
Sheng Xu ◽  
Tailiang Guo ◽  
...  

We present a ligand-exchange-free photo-patternable quantum-dot photoresist (QDPR) with high photolithographic uniformity. The dispersion mechanism between the QD’s surface ligands and the functional groups of photoresist polymers are studied. Results show that the dispersibility and photoluminescent intensity of this QDPR can be both improved by controlling dispersant and antioxidant. For device demonstration, multi-colored quantum dot color conversion films (QDCCF) were prepared and patterned by a photolithography process. High QD dispersibility and film-forming uniformity were both achieved with this QDCCF. It is believed that the proposed QDPR has the potential to be extensively used in lighting or display applications.


Author(s):  
Atsuhiro Furuta ◽  
Kazuki Honjo ◽  
Jun Taniguchi

Abstract In recent years, flexible electronic devices such as printed electronics are gathering attention. To make flexible connect between one circuit device and another circuit device, interposer is necessary. However, most of conventional interposers are not flexible, because there are made of silicon or glass substrate. To solve this problem, we have been developed fabrication process of flexible interposer. Master mold was fabricated by photolithography process. First, SU-8 resist was coated on silicon substrate with 5μm thickness. Then, photolithography process was carried out to SU-8 resist. After development, pillar shape master molds with diameters of 10 or 20 μm were obtained. After release coating of master molds, hole patterns for vias were transferred by UV nanoimprint lithography. The obtained hole patterns were diameter of 10 μm or 20 μm, and pitch of 21.0 μm and 40.1 μm, respectively. Next, these holes were filled with silver ink by roll press method. Then, sintering process was carried out to evaporate of solvent of silver ink. After that, flexible interposer was obtained. As a result, we have been succeeded in filling the holes array with silver ink. Obtained interposer vias, which were silver region, were 8.2 μm diameter and 3.3 μm height, or 20.3 μm diameter and 5.3 μm height for 10 mm square size.


1989 ◽  
Author(s):  
Shin-ya Hasegawa ◽  
Shigetake Iwata ◽  
Fumio Yamagishi ◽  
Hiroyuki Ikeda ◽  
Takefumi Inagaki

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