The TFTs array fabrication process for large-area TFT-LCD has been continuously
developed for simplifying processing steps, improving performance and reducing cost in the process
of mass production. In this study, the hydrogenated amorphous silicon (a-Si:H) TFTs with low
resistivity electrodes , silver thin films, were prepared by using the selective deposition method that
combined lift-off and electroless plated processes. This developed process can direct pattern the
electrode of transistor devices without the etching process and provide ease processing steps. The
as-deposited Ag films were annealed at 200 oC for 10 minutes under N2 atmosphere. The results
shows that the adhesion properties can be enhanced and the resistivity has been improved from 6.0
μ,-cm, significantly decrease by 35%, of as-deposited Ag films by annealed. The thickness of Ag
thin film is about 100 nm and the r. m. s roughness value is 1.54 nm. The a-Si:H TFT with Ag thin
films as source and drain electrodes had a field effect mobility of 0.18 cm2/Vs, a threshold voltage of
2.65 V, and an on/off ratio of 3×104.
