Systematic defect inspection and verification for distributions of critical dimension in OPC models utilizing design based metrology tool

2008 ◽  
Author(s):  
Jeong-Geun Park ◽  
Sang-ho Lee ◽  
Young-Seog Kang ◽  
Young-Kyou Park ◽  
Tadashi Kitamura ◽  
...  
Keyword(s):  
Critical Dimension ◽  
Defect Inspection

scholarly journals Defect Inspection in Display Panel Using Concentrated Auto Encoder

2019 ◽  
Vol 2019 ◽  
pp. 1-12
Author(s):  
DongHun Ku
Keyword(s):  
Critical Dimension ◽  
Image Similarity ◽  
Inspection Time ◽  
Performance Parameters ◽  
Defect Inspection ◽  
Alignment Position ◽  
Similarity Comparison ◽  
Comparison Methods ◽  
Inspection Performance

In this paper, concentrated auto encoder (CAE) is proposed for aligning photo spacer (PS) and for local inspection of PS. The CAE method has two characteristics. First, unaligned images can be moved to the same alignment position, which makes it possible to move the measured PS images to the same position in order to directly compare the images. Second, the characteristics of the abnormal PS are maintained even if the PS is aligned by the CAE method. The abnormal PS obtained through CAE has the same alignment as the reference PS and has its abnormal characteristics. The presence or absence of defects and the location of defects were identified without precisely measuring the height of the PS and critical dimension (CD). Also, alignment and defect inspection were performed simultaneously, which shortened the inspection time. Finally, inspection performance parameters and inspection time were analyzed to confirm the validity of the CAE method and were compared with the image similarity comparison methods used for defect inspection.

Information capacity and bandwidth limitations in the SEM

1989 ◽  
Vol 47 ◽  
pp. 84-85
Author(s):  
D. C. Joy ◽  
R. D. Bunn
Keyword(s):  
Signal To Noise Ratio ◽  
Critical Dimension ◽  
Information Capacity ◽  
Acquisition Time ◽  
Signal To Noise ◽  
Sem Image ◽  
Probe Size ◽  
Minimum Number ◽  
Noise Ratio ◽  
Signal Channel

The information available from an SEM image is limited both by the inherent signal to noise ratio that characterizes the image and as a result of the transformations that it may undergo as it is passed through the amplifying circuits of the instrument. In applications such as Critical Dimension Metrology it is necessary to be able to quantify these limitations in order to be able to assess the likely precision of any measurement made with the microscope.The information capacity of an SEM signal, defined as the minimum number of bits needed to encode the output signal, depends on the signal to noise ratio of the image - which in turn depends on the probe size and source brightness and acquisition time per pixel - and on the efficiency of the specimen in producing the signal that is being observed. A detailed analysis of the secondary electron case shows that the information capacity C (bits/pixel) of the SEM signal channel could be written as :

Methodology to Correlate Defect Reduction Systems to Electrical Test Data via Artificially Manufactured Defects

2002 ◽  
Author(s):  
Mike Santana ◽  
Alfredo V. Herrera
Keyword(s):  
Test Data ◽  
Learning Opportunities ◽  
Inspection System ◽  
Navigation Systems ◽  
Defect Inspection ◽  
Defect Reduction ◽  
Electrical Test ◽  
Important System

Abstract This paper describes a methodology for correlating physical defect inspection/navigation systems with electrical bitmap data through the fabrication of artificial defects via reticle alterations or circuit modifications using an inline FIB. The methodology chosen consisted of altering decommissioned reticles to create defects resulting in both open and shorted circuits within areas of an AMD microprocessor cache. The reticles were subsequently scanned using a KLA SL300HR StarLight inspection system to confirm their location, while wafers processed on these reticles were scanned at several layers using standard inline metrology. Finally, the wafers were electrically tested, bitmapped, and physically deprocessed. All defect data was then analyzed and cross-correlated between each system, uncovering some important system deficiencies and learning opportunities. Data and images are included to support the significance and effectiveness of such a methodology.

Analysis of Retention Time Degradation Caused by Electrostatic Potential Variation between Adjacent Bit-Line and Adjacent Contact Node in DRAM

2016 ◽  
Author(s):  
Jungil Mok ◽  
Byungki Kang ◽  
Daesun Kim ◽  
Hongsun Hwang ◽  
Sangjae Rhee ◽  
...  
Keyword(s):  
Electric Field ◽  
Electrostatic Potential ◽  
Critical Dimension ◽  
Data Retention ◽  
Signal Line ◽  
Adjacent Node ◽  
Storage Node ◽  
Retention Characteristics ◽  
Node Voltage ◽  
The Relationship

Abstract Systematic retention failure related on the adjacent electrostatic potential is studied with sub 20nm DRAM. Unlike traditional retention failures which are caused by gate induced drain leakage or junction leakage, this failure is influenced by the combination of adjacent signal line and adjacent contact node voltage. As the critical dimension between adjacent active and the adjacent signal line and contact node is scaled down, the effect of electric field caused by adjacent node on storage node is increased gradually. In this paper, we will show that the relationship between the combination electric field of adjacent nodes and the data retention characteristics and we will demonstrate the mechanism based on the electrical analysis and 3D TCAD simulation simultaneously.

Rapid Failure Analysis of Low-Yielding Electrical Test Structures Using E-beam Physical and Voltage Contrast Inspection

2013 ◽  
Author(s):  
Oliver D. Patterson ◽  
Deborah A. Ryan ◽  
Xiaohu Tang ◽  
Shuen Cheng Lei
Keyword(s):  
Failure Analysis ◽  
Defect Detection ◽  
High Volume ◽  
The Other ◽  
Defect Inspection ◽  
Electrical Test ◽  
Detection Mode ◽  
Rapid Generation ◽  
Voltage Contrast ◽  
Additional Support

Abstract In-line E-beam inspection may be used for rapid generation of failure analysis (FA) results for low yielding test structures. This approach provides a number of advantages: 1) It is much earlier than traditional FA, 2) de-processing isn’t required, and 3) a high volume of sites can be processed with the additional support of an in-line FIB. Both physical defect detection and voltage contrast inspection modes are useful for this application. Voltage contrast mode is necessary for isolation of buried defects and is the preferred approach for opens, because it is faster. Physical defect detection mode is generally necessary to locate shorts. The considerations in applying these inspection modes for rapid failure analysis are discussed in the context of two examples: one that lends itself to physical defect inspection and the other, more appropriately addressed with voltage contrast inspection.

Failure Analysis and Defect Inspection of Electronic Devices by High-Resolution Cathodoluminescence

2017 ◽  
Author(s):  
C. Monachon ◽  
M.S. Zielinski ◽  
D. Gachet ◽  
S. Sonderegger ◽  
S. Muckenhirn ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Electronic Materials ◽  
Electronic Devices ◽  
Optical Emission ◽  
Large Field ◽  
Nanometer Scale ◽  
Defect Analysis ◽  
Defect Inspection ◽  
Spectrally Resolved ◽  
Non Destructive

Abstract Quantitative cathodoluminescence (CL) microscopy is a new optical spectroscopy technique that measures electron beam-induced optical emission over large field of view with a spatial resolution close to that of a scanning electron microscope (SEM). Correlation of surface morphology (SE contrast) with spectrally resolved and highly material composition sensitive CL emission opens a new pathway in non-destructive failure and defect analysis at the nanometer scale. Here we present application of a modern CL microscope in defect and homogeneity metrology, as well as failure analysis in semiconducting electronic materials

TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

2011 ◽  
Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung
Keyword(s):  
Sample Preparation ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Critical Dimension ◽  
Low Energy ◽  
Ex Situ ◽  
Good Image Quality ◽  
Ion Beam Etching ◽  
Device Structures ◽  
Common Technique

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.

Investigation of the Process of Plasma Through Etching of HkMG Stack of Nanotransistor with a 32-nm Critical Dimension

2018 ◽  
Vol 47 (5) ◽  
pp. 44-50
Author(s):  
A. Myakonkikh ◽  
◽  
K. Kuvaev ◽  
A. Tatarintsev ◽  
N. Orlikovskii ◽  
...  
Keyword(s):  
Critical Dimension
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