Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution

We studied the current-voltage characteristic of pSi--nSi1--xSnx structures in the temperature range of 293--393 K so as to find out the role of injection phenomena during electrical property formation in pSi--nSi1--xSnх heterojunctions derived from the Si1--xSnx (0 ≤ x ≤ 0.04) solid solution. We established that the current-voltage characteristic of such heterojunctions consists of two typical segments. We determined that an exponential function describes the first current-voltage characteristic segment well. In all current-voltage characteristics the exponential curve is followed by sublinear segments that do not depend on temperature. We show that the theory of injection depletion effect describes these segments well. We used the sublinear segment of the current-voltage characteristic to determine the value of the parameter a, which can be employed to calculate deep level impurity concentration leading to the appearance of the sublinear segment. We prove that the structure under investigation may be considered to be a pSi--nSi1--xSnx--n+Si1--xSnx (0 ≤ x ≤ 0.04) junction with a high-resistance nSi1--xSnx layer. The analysis results make it possible to conclude that charge carrier dissipation on both complex aggregates and nanoinclusions plays a significant role in forming electrophysical properties in the Si1--xSnx (0 ≤ x ≤ 0.04) solid solution and that epitaxial films of Si1--xSnx (0 ≤ x ≤ 0.04) solid solutions derived on silicon substrates are efficient promising materials for developing diodes operating under double injection

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RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF p-Si-n-(Si2)1 - x - y(Ge2)x(ZnSe)y-STRUCTURES ON TEMPERATURE

Computational nanotechnology ◽

10.33693/2313-223x-2019-6-3-16-21 ◽

2019 ◽

Vol 6 (3) ◽

pp. 16-21

Author(s):

Amin Safarbaevich Saidov ◽

Kobil Asharovich Amonov ◽

Ada Yul'evna Leyderman

Keyword(s):

Solid Solution ◽

Liquid Phase ◽

Liquid Phase Epitaxy ◽

Room Temperature ◽

Experimental Results ◽

Complex Nature ◽

Silicon Substrates ◽

The Third ◽

Current Voltage ◽

Current Voltage Characteristics

The possibility of growing of the solid solution (Si2)1 - x - y (Ge2)x (ZnSe)y on silicon substrates by liquid-phase epitaxy from the tin solution - melt has been shown. The current - voltage characteristics of heterostructures at room temperature has three sections: ohmic section - I ~ V , exponential one - I ~ exp ( qV / ckT ), and the third one with cubic dependence - I ~ V3 that at increasingtemperature is replaced by the weaker dependences - I ~ V2,8, I ~ V2,5 and I ~ V2,3 at temperatures of 360, 390 and 420 K, respectively. The experimental results are explained on the basis of theoretical ideas about the complex nature of the recombination processesin these materials.

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Temperature dependences of the elektrophysical properties of the solid solution Si1-xSnx (0  x  0.04)

Applied Physics ◽

10.51368/1996-0948/2021-1-63-68 ◽

2021 ◽

pp. 63-68

Keyword(s):

Solid Solution ◽

Space Charge ◽

Solid Solutions ◽

Active Material ◽

Silicon Substrates ◽

Temperature Range ◽

Carrier Transfer ◽

Current Voltage ◽

Temperature Dependences ◽

Current Voltage Characteristics

The current-voltage characteristics of p-Si–n-Si1-xSnx (0  x  0.04) structures have been studied in the temperature range from 293 to 453 K. It was determined that the initial sections of the direct branches of the I–V characteristic at all temperatures are described by the expo-nential dependence of the current on the voltage, and then a quadratic section follows, which is described by the drift mechanism of carrier transfer in the regime of ohmic relaxation of the space charge. We determined the activation energies of two deep levels with values of 0.21 eV and 0.35 eV, which are assigned to interstitial Sn atoms and A-centers, respectively. The prospect of using solid solutions Si1-xSnx (0  x  0.04), obtained on silicon substrates, as an active material in the manufacture of injection diodes is substantiated.

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