Influence of hydrostatic compression on the sliding of a pair of edge dislocations in metals with a high impurity concentration

2013 ◽  
Vol 58 (12) ◽  
pp. 1853-1855 ◽  
Author(s):  
V. V. Malashenko ◽  
N. V. Belykh
Keyword(s):  
Impurity Concentration ◽  
Hydrostatic Compression ◽  
High Impurity ◽  
High Impurity Concentration ◽  
Edge Dislocations

Proximity Gettering of Slow Diffuser Contaminants

2013 ◽  
Vol 205-206 ◽  
pp. 271-277 ◽  
Author(s):  
Maria Luisa Polignano ◽  
Isabella Mica ◽  
Elena Cazzini ◽  
Monica Ceresoli ◽  
Davide Codegoni ◽  
...  
Keyword(s):  
Solid Solution ◽  
Impurity Concentration ◽  
Extended Defects ◽  
High Impurity ◽  
High Impurity Concentration ◽  
Silicon Implantation ◽  
And Tungsten

In this paper, we test proximity gettering layers obtained by carbon or silicon implantation for their efficiency in molybdenum and tungsten gettering. DLTS was used to measure the impurity concentration in the solid solution and so to evaluate gettering efficiency. It was found that carbon implantation is effective in capturing these impurities, whereas silicon implantation is not. Extended defects seem not to play an important role in gettering these impurities. In addition, gettering was found to be most effective at high impurity concentration.

scholarly journals Fabrication of non-equilibrium Si: Te and Si: Zn Systems with extremely high impurity concentration by means of laser annealing.

1981 ◽  
Vol 9 (4) ◽  
pp. 434-438
Author(s):  
Kouichi MURAKAMI ◽  
Eiji IKAWA ◽  
A.H. ORABY ◽  
Kenji GAMO ◽  
Susumu NAMBA ◽  
...  
Keyword(s):  
Impurity Concentration ◽  
Laser Annealing ◽  
High Impurity ◽  
High Impurity Concentration ◽  
Non Equilibrium

Resistivity Distribution Characteristics of Metallurgical Silicon Ingot after Directional Solidification

2011 ◽  
Vol 675-677 ◽  
pp. 109-112
Author(s):  
Shu Ang Shi ◽  
Wei Dong ◽  
Shi Hai Sun ◽  
Yi Tan ◽  
Guo Bin Li ◽  
...  
Keyword(s):  
Directional Solidification ◽  
Vertical Section ◽  
Growth Direction ◽  
Silicon Ingot ◽  
Metallurgical Silicon ◽  
High Impurity ◽  
Polarity Transition ◽  
High Impurity Concentration ◽  
Solid Liquid Interface ◽  
Solid Liquid

The distribution of resistivity, impurity and polarity in multicrystalline silicon ingot prepared by directional solidification method was detected. The effect of impurity distribution on resistivity was also researched. The results show that the shapes of equivalence line of resistivity in the cross section and vertical section of the silicon ingot depend on the solid-liquid interface. The resistivity in the vertical section increases with the increasing of solidified height at the beginning of solidification and reaches to maximum at the polarity transition point, then decreases rapidly with the increasing of solidified height and tends to zero on the top of the ingot because of the high impurity concentration. Study proves that the variation of resistivity in the vertical section is mainly relevant to the concentration distribution of the impurities such as Al, B and P in the growth direction.

Constituent Diffusion in a Deformable Thermoelastic Solid

1987 ◽  
Vol 54 (2) ◽  
pp. 441-446 ◽  
Author(s):  
S. P. Girrens ◽  
F. W. Smith
Keyword(s):  
Thermal Loading ◽  
Diffusion Theory ◽  
Parent Material ◽  
Β Phase ◽  
High Impurity ◽  
High Impurity Concentration ◽  
Thermoelastic Solid ◽  
Impurity Elements ◽  
Fully Coupled ◽  
Diffusion Problems

Solid mixtures containing initially uniform dilute concentrations of impurity elements may, upon the application of mechanical and thermal loading, develop regions of high impurity concentration that could result in local degradation of material properties. To address these degradation processes, a fully coupled thermomechanical-diffusion theory has been developed to describe the mass transport of mobile constituents driven by gradients in concentration, strain dilatation and temperature in a solid deformable parent material. A finite element code has been assembled to solve plane transient thermomechanical-diffusion problems. The theory presented and the resulting code have been successfully used to model internal hydrogen redistribution in β-phase Ti alloys induced by elastic strain gradients during bending.

Influence of Impurity Band on Seebeck Coefficient in Heavily-Doped Si

2011 ◽  
Vol 222 ◽  
pp. 197-200 ◽  
Author(s):  
Faiz Salleh ◽  
Hiroya Ikeda
Keyword(s):  
Seebeck Coefficient ◽  
Impurity Concentration ◽  
Energy Shift ◽  
Impurity Band ◽  
Theoretical Models ◽  
Experimental Result ◽  
Band Formation ◽  
High Impurity ◽  
Heavily Doped ◽  
Band Tailing

We calculated the Seebeck coefficient of heavily-doped Si based on theoretical models of impurity-band formation, ionization-energy shift and conduction-band tailing. The impurity band was described by using two kinds of band-width definitions and it was found that the calculated Seebeck coefficient strongly depended on the impurity-band definition. In the high impurity-concentration region, the Seebeck coefficient decreased with increasing impurity concentration, and with a peak around 1×1019 cm-3. This result was qualitatively in good agreement with the experimental result, while there was quantitative disagreement between them.

Fabrication and electrical characteristics of Ti/Al ohmic contact to Si+ implanted GaN

2005 ◽  
Vol 892 ◽  
Author(s):  
Nobuyuki Ito ◽  
Akira Suzuki ◽  
Mitsunori Kawamura ◽  
Kazuki Nomoto ◽  
Takeshi Kasai ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Smooth Surface ◽  
Surface Region ◽  
Specific Contact Resistance ◽  
Uniform Structure ◽  
Electrical Characteristics ◽  
High Impurity ◽  
Specific Contact ◽  
High Impurity Concentration

AbstractTi/Al ohmic contact with an extremely low specific contact resistance has been formed by the deposition of Ti and Al films on Si+ lanted GaN. The ohmic contact formed by annealing at 600 o C of Ti film with a thickness of 50 nm and Al film with a thickness of 200 nm reveals the good smooth surface and uniform structure as compare to those of contacts formed above 700 °C, which is correlated to whether the Al-Ti alloy is melted during the annealing of ohmic contact or not. The specific contact resistance of 2 × 10-6Ω-cm2 is obtained for Si+ implanted GaN with a dose of 5 × 1013 cm-2. As Si ion dose increases to 5 × 1014 /cm2, the specific contact resistance is reduced to 2 × 10-8 Ω-cm2. It is revealed that the selective doping at high impurity concentration in the surface region by Si+ implantation is useful to reduce the contact resistance for Ti/Al contact to GaN.

Bridgman Growth of SrI2

2011 ◽  
Vol 1341 ◽  
Author(s):  
Leonard Alaribe ◽  
Christian Disch ◽  
Alex Fauler ◽  
Ralf Engels ◽  
Egbert Keller ◽  
...  
Keyword(s):  
Gamma Ray ◽  
Light Trapping ◽  
Light Yield ◽  
Bulk Sample ◽  
Oxygen Sensitivity ◽  
X Ray ◽  
High Impurity ◽  
Two Samples ◽  
High Impurity Concentration ◽  
Gamma Ray Detector

ABSTRACTEu2+– activated strontium iodide is a promising material for x-ray and gamma ray detector. A lot of difficulties are though encountered growing strontium iodide crystals due to the high oxygen-sensitivity, hygroscopic property and high impurity concentration. Single crystals of SrI2:Eu were grown from zone refined starting materials in silica ampoules. The crystals showed good optical qualities. The light yield of two samples cut from the same ingot was determined to be 53 000 photons/MeV and 119±22 photons/keV for a 0.4 cm3 sample and a 360 μm sample respectively, indicating some level of light trapping in the bulk sample.

The nucleation of cavities at grain boundaries

1987 ◽  
Vol 45 ◽  
pp. 288-291
Author(s):  
P. J. Goodhew
Keyword(s):  
Surface Tension ◽  
Surface Energy ◽  
Grain Boundaries ◽  
Radiation Damage ◽  
Impurity Concentration ◽  
Driving Force ◽  
Nucleation And Growth ◽  
Phase Boundaries ◽  
Cavity Nucleation ◽  
Spherical Bubble

Cavity nucleation and growth at grain and phase boundaries is of concern because it can lead to failure during creep and can lead to embrittlement as a result of radiation damage. Two major types of cavity are usually distinguished: The term bubble is applied to a cavity which contains gas at a pressure which is at least sufficient to support the surface tension (2g/r for a spherical bubble of radius r and surface energy g). The term void is generally applied to any cavity which contains less gas than this, but is not necessarily empty of gas. A void would therefore tend to shrink in the absence of any imposed driving force for growth, whereas a bubble would be stable or would tend to grow. It is widely considered that cavity nucleation always requires the presence of one or more gas atoms. However since it is extremely difficult to prepare experimental materials with a gas impurity concentration lower than their eventual cavity concentration there is little to be gained by debating this point.

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