Phase formation in Fe–Si thin-film diffusion couples

1992 ◽  
Vol 70 (10-11) ◽  
pp. 860-865 ◽  
Author(s):  
Douglas G. Ivey ◽  
Dashan Wang
Keyword(s):  
Protective Layer ◽  
Solubility Limit ◽  
Electron Beam Evaporation ◽  
Solid State Reactions ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Thin Film Diffusion

The formation of FeSi2, as well as other iron silicides, from solid-state reactions of Fe thin films on Si substrates has been investigated. Iron layers, approximately 50 nm thick, were deposited by electron beam evaporation on <100> oriented Si substrates. Silicon (≈35 nm) and SiO2 (≈170 nm) layers were deposited on top of the Fe layer in the same evaporator without breaking the chamber vacuum. SiO2 acted as a protective layer during subsequent annealing in a nitrogen ambient. All annealed samples were examined using X-ray diffraction and transmission electron microscopy (TEM). Both plan view and cross section specimens were prepared for TEM. Detailed phase analysis was accomplished through the various electron diffraction and X-ray microanalysis techniques available with the TEM. Silicon dissolved readily in Fe, at temperatures lower than 300 °C, up to the solubility limit of ≈26 at%Si. FeSi formation followed (350 °C), with semiconducting FeSi2 forming at 500 °C. The Fe–amorphous Si interface was more reactive, with silicide formation occurring at lower annealing temperatures (300 °C). There was also evidence that FeSi2 formed directly from α-Fe and amorphous Si.

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

Porous Amorphous Si Formation by the Etching of Single Crystal Si Substrates

1992 ◽  
Vol 259 ◽  
Author(s):  
T. George ◽  
R. P. Vasquez ◽  
S. S. Kim ◽  
R.W. Fathauer ◽  
W. T. Pike
Keyword(s):  
Photoelectron Spectroscopy ◽  
Light Emitting ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Spin Resonance ◽  
Amorphous Si ◽  
Si Films ◽  
P Type ◽  
Stain Etching

ABSTRACTThe nature of light-emitting porous Si layers produced by non-anodic stain etching of p-type (100) Si substrates is studied. The layers were characterized by transmission electron microscopy as being amorphous in nature. X-ray photoelectron spectroscopy and electron spin resonance measurements show these layers to be composed mainly of a-Si. The formation mechanism of the a-Si is explored using by stain etching SiGe ‘marker’ layers within epitaxially grown Si films and by high temperature annealing. These experiments provide strong evidence for a spontaneous crystalline-amorphous phase transformation during the etching process.

Growth Behavior of Au on Semiconductor and Insulating Substrates

1985 ◽  
Vol 47 ◽  
Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh ◽  
R. B. Laibowltz ◽  
J. A. Lacey
Keyword(s):  
Single Crystal ◽  
Substrate Surface ◽  
Electron Beam Evaporation ◽  
Growth Behavior ◽  
Tem Analysis ◽  
Si Substrates ◽  
Transmission Electron ◽  
Substrate Surface Roughness ◽  
Amorphous Si ◽  
Deposition Conditions

ABSTRACTThere is a great deal of interest in forming Au grains on semiconductor and insulating substratcs for device application. Reduction in density of grain boundaries is known to cause improvement of clectromigration in thin films. Transmission electron microscopy and diffraction have been used to study the growth behavior and morphology of vapor deposited Au on these substrates. Electron beam evaporation techniques were used to evaporate Au at high rates (50Å/sec or higher) on substrates held at low temperature (Rm. Temp. to 250°C). Large Au grains laave been found to form on both amorphous (Si3N4 and SiO2) and single crystal Si substrates. The grain size of Au was also found to be dependent on substrate surface roughness; rough surfaces tended to retard the formation of large grains. Grains as large as 1/2 μ in a matrix of smaller ones were observed in films as thin as 350Å Annealing up to 350°C, subsequent to deposition, did not appreciably increase the size of the larger grains, although the smaller ones grew by about 10%. The TEM analysis together with RBS and AES data showed no significant interaction between Au and Si (that is to say no atomic intermixing or silicide formation) under all deposition conditions as well as annealing heat treatments. The significance of this in relation to the growth behavior of Au on the insulating and single crystal Si substrates will be shown.

TiSi2 Thin Films Formed on Crystalline and Amorphous Silicon

1990 ◽  
Vol 182 ◽  
Author(s):  
Z.G. Xiao ◽  
H. Jiang ◽  
J. Honeycutt ◽  
C.M. Osburn ◽  
G. Mcguire ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Plan View ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Transformation Stress ◽  
Silicon Interface

AbstractTiSi2 thin films were formed on crystalline and amorphous silicon substrates obtained by Ge+ and Ge++B+ implantation and optional subsequent annealing. Transmission electron microscopy, X-ray diffraction and electrical resistivity analysis revealed that the silicide formed on amorphous Si has more tendency to have a C54 structure rather than the metastable C49 structure. Also, the grain size is smaller and the silicide/silicon interface is smoother for silicides formed on amorphous Si. Comparison between implanted and unimplanted, (100) and (111) Si substrates indicated that the origin of the differences can be attributed to the latent energy stored in amorphous silicon, which favors the silicide with fine grains and promotes the transformation to the C54 phase. Non-random distribution of planar defects in C49 grains has been observed by plan-view TEM. A proposal that these defects are transformation stress induced microtwins is presented.

Tisi2 Thin Films Formed on Crystalline and Amorphous Silicon

1990 ◽  
Vol 181 ◽  
Author(s):  
Z.G. Xiao ◽  
H. Jiang ◽  
J. Honeycutt ◽  
C.M. Osburn ◽  
G. McGuire ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Plan View ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Transformation Stress ◽  
Silicon Interface

ABSTRACTTiSi2 thin films were formed on crystalline and amorphous silicon substrates obtained by Ge+ and Ge++B+ implantation and optional subsequent annealing. Transmission electron microscopy, X-ray diffraction and electrical resistivity analysis revealed that the silicide formed on amorphous Si has more tendency to have a C54 structure rather than the metastable C49 structure. Also, the grain size is smaller and the silicide/silicon interface is smoother for silicides formed on amorphous Si. Comparison between implanted and unimplanted, (100) and (111) Si substrates indicated that the origin of the differences can be attributed to the latent energy stored in amorphous silicon, which favors the silicide with fine grains and promotes the transformation to the C54 phase. Non-random distribution of planar defects in C49 grains has been observed by plan-view TEM. A proposal that these defects are transformation stress induced microtwins is presented.

Growth of near noble metal Pd and Pt thin film silicides morphology and structure

1984 ◽  
Vol 42 ◽  
pp. 498-499
Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh
Keyword(s):  
Noble Metals ◽  
Annealing Temperature ◽  
Chemical Compounds ◽  
Barrier Properties ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Stable Chemical ◽  
Metal Thickness ◽  
Amorphous Si ◽  
Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

The Effect of the Microstructure of Diffusion Barriers on the Palladium Activation for Electroless Copper Deposition

2002 ◽  
Vol 716 ◽  
Author(s):  
Seok Woo Hong ◽  
Yong Sun Lee ◽  
Ki-Chul Park ◽  
Jong-Wan Park
Keyword(s):  
Electron Microscopy ◽  
Diffusion Barriers ◽  
Copper Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Electroless Copper ◽  
Sheet Resistance Measurement ◽  
Scanning Electron

AbstractThe effect of microstructure of dc magnetron sputtered TiN and TaN diffusion barriers on the palladium activation for autocatalytic electroless copper deposition has been investigated by using X-ray diffraction, sheet resistance measurement, field emission scanning electron microscopy (FE-SEM) and plan view transmission electron microscopy (TEM). The density of palladium nuclei on TaN diffusion barrier increases as the grain size of TaN films decreases, which was caused by increasing nitrogen content in TaN films. Plan view TEM results of TiN and TaN diffusiton barriers showed that palladium nuclei formed mainly on the grain boundaries of the diffusion barriers.

Epitaxial Growth of Aluminum Nitride on Sapphire and Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
K. Dovidenko ◽  
S. Oktyabrsky ◽  
J. Narayan ◽  
M. Razeghi
Keyword(s):  
Epitaxial Growth ◽  
Substrate Surface ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
High Quality ◽  
Microstructural Characteristics ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTThe microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (10ī2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH3 + N2 gas mixtures. Different degrees of film crystallinity were observed for films grown on α-A12O3 and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al2O3 was demonstrated with a dislocation density of about 2*10 10cm−2 . The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.

Type II Dislocation Loops and their Effect on Strain in Ion Implanted Silicon as Studied by High Resolution X-ray Diffraction

1995 ◽  
Vol 378 ◽  
Author(s):  
R. H. Thompson ◽  
V. Krishnamoorthy ◽  
J. Liu ◽  
K. S. Jones
Keyword(s):  
High Resolution ◽  
Type Ii ◽  
Dislocation Loops ◽  
X Ray Diffraction ◽  
Empirical Constant ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Measured Strain ◽  
P Type

AbstractP-type (100) silicon wafers were implanted with 28Si+ ions at an energy of 50 keV and to doses of 1 × 1015, 5 × 1015 and 1 × 1016 cm−2, respectively, and annealed in a N2 ambient at temperatures ranging from 700°C to 1000°C for times ranging from 15 minutes to 16 hours. The resulting microstructure consisted of varying distributions of Type II end of range dislocation loops. The size distribution of these loops was quantified using plan-view transmission electron microscopy and the strain arising from these loops was investigated using high resolution x-ray diffraction. The measured strain values were found to be constant in the loop coarsening regime wherein the number of atoms bound by the loops remained a constant. Therefore, an empirical constant of 7.7 × 10−12 interstitial/ppm of strain was evaluated to relate the number of interstitials bound by these dislocation loops and the strain. This value was used successfully in estimating the number of interstitials bound by loops at the various doses studied provided the annealing conditions were such that the loop microstructure was in the coarsening or dissolution regime.

LOW-Temperature Epitaxial Growth of GaAs on Si Substrates by MBE

1992 ◽  
Vol 263 ◽  
Author(s):  
Ting-Yen Chiang ◽  
En-Huery Liu ◽  
Der-Hwa Yiin ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Defect Density ◽  
Solution Treatment ◽  
Plan View ◽  
Si Substrates ◽  
Gaas On Si ◽  
Transmission Electron

ABSTRACTThis paper presents results of the low—temperature epitaxial growth of GaAs on Si substrates with orientation 1°—4° off (100) by molecular beam epitaxy (MBE). The epitaxial growth ·is carried out on Si wafers subjected to HF solution treatment by “spin-etch” technique before the wafer is transferred to the entry chamber of MBE system. Methods used for reducing defect density in the epitaxial layers are proposed. The characterization techniques include cross-sectional transmission electron microscopy (XTEM), plan-view transmission electron microscopy, scanning electron microscopy (S EM), and double crystal X-ray diffraction (DCXRD). Epitaxial films with a full width at half—maximum (FWHM) of about 310 arcsec measured by DCXRD are obtained without annealing.-

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