Growth Behavior of Au on Semiconductor and Insulating Substrates

1985 ◽  
Vol 47 ◽  
Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh ◽  
R. B. Laibowltz ◽  
J. A. Lacey
Keyword(s):  
Single Crystal ◽  
Substrate Surface ◽  
Electron Beam Evaporation ◽  
Growth Behavior ◽  
Tem Analysis ◽  
Si Substrates ◽  
Transmission Electron ◽  
Substrate Surface Roughness ◽  
Amorphous Si ◽  
Deposition Conditions

ABSTRACTThere is a great deal of interest in forming Au grains on semiconductor and insulating substratcs for device application. Reduction in density of grain boundaries is known to cause improvement of clectromigration in thin films. Transmission electron microscopy and diffraction have been used to study the growth behavior and morphology of vapor deposited Au on these substrates. Electron beam evaporation techniques were used to evaporate Au at high rates (50Å/sec or higher) on substrates held at low temperature (Rm. Temp. to 250°C). Large Au grains laave been found to form on both amorphous (Si3N4 and SiO2) and single crystal Si substrates. The grain size of Au was also found to be dependent on substrate surface roughness; rough surfaces tended to retard the formation of large grains. Grains as large as 1/2 μ in a matrix of smaller ones were observed in films as thin as 350Å Annealing up to 350°C, subsequent to deposition, did not appreciably increase the size of the larger grains, although the smaller ones grew by about 10%. The TEM analysis together with RBS and AES data showed no significant interaction between Au and Si (that is to say no atomic intermixing or silicide formation) under all deposition conditions as well as annealing heat treatments. The significance of this in relation to the growth behavior of Au on the insulating and single crystal Si substrates will be shown.

Interactions Of Evaporated Nickel And Silicon Thin Films

1985 ◽  
Vol 54 ◽  
Author(s):  
L. R. Zheng ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Formation Temperature ◽  
Si Substrates ◽  
Silicon Thin Films ◽  
Transmission Electron ◽  
Amorphous Si ◽  
The Stability

ABSTRACTInteractions of evaporated Ni and Si thin films were investigated by a combination of backseat tering spectrometry and transmission electron microscopy. The presence of amorphous Si has no significant effects on Ni2Si and NiSi formation, but it drastically lowers the formation temperature of NiSi. Experiments with evaporated thin markers established that Ni is the dominant diffusing species in the growth of the three suicides. The stability of NiSi was examined by sequential evaporation of Ni34Si66 and Ni50Si50 thin films both on Si(100) and on evaporated Si substrates. The results showed that NiSi2 grows at the expence of NiSi when the stucture is in contact with evaporated Si, while it dissociates into NiSi and Si when in contact with single crystal Si.

Phase formation in Fe–Si thin-film diffusion couples

1992 ◽  
Vol 70 (10-11) ◽  
pp. 860-865 ◽  
Author(s):  
Douglas G. Ivey ◽  
Dashan Wang
Keyword(s):  
Protective Layer ◽  
Solubility Limit ◽  
Electron Beam Evaporation ◽  
Solid State Reactions ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Thin Film Diffusion

The formation of FeSi2, as well as other iron silicides, from solid-state reactions of Fe thin films on Si substrates has been investigated. Iron layers, approximately 50 nm thick, were deposited by electron beam evaporation on <100> oriented Si substrates. Silicon (≈35 nm) and SiO2 (≈170 nm) layers were deposited on top of the Fe layer in the same evaporator without breaking the chamber vacuum. SiO2 acted as a protective layer during subsequent annealing in a nitrogen ambient. All annealed samples were examined using X-ray diffraction and transmission electron microscopy (TEM). Both plan view and cross section specimens were prepared for TEM. Detailed phase analysis was accomplished through the various electron diffraction and X-ray microanalysis techniques available with the TEM. Silicon dissolved readily in Fe, at temperatures lower than 300 °C, up to the solubility limit of ≈26 at%Si. FeSi formation followed (350 °C), with semiconducting FeSi2 forming at 500 °C. The Fe–amorphous Si interface was more reactive, with silicide formation occurring at lower annealing temperatures (300 °C). There was also evidence that FeSi2 formed directly from α-Fe and amorphous Si.

Influence of the microstructure of Pt/Si substrates on textured growth of barium titanate thin films prepared by pulsed laser deposition

1998 ◽  
Vol 13 (2) ◽  
pp. 368-375 ◽  
Author(s):  
Cheol Seong Hwang ◽  
Mark D. Vaudin ◽  
Peter K. Schenck
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Growth Behavior ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Epitaxial Relationship ◽  
Si Substrates ◽  
Transmission Electron

Pt-coated silicon substrates with strong (111) Pt texture were annealed in an oxidizing atmosphere at temperatures from 500 °C to 750 °C. BaTiO3 thin films were deposited by pulsed laser ablation on the substrates. Observation by transmission electron microscopy showed that the substrate anneal caused the formation of TiO2 in the Pt layer, accompanied by the formation of a high density of faceted protrusions on the Pt surface, particularly at the higher anneal temperatures. The Pt protrusions had (111) facets, parallel to the substrate surface, on which (100)-oriented BaTiO3 grains were observed. BaTiO3 grains with an epitaxial relationship to the Pt lattice were observed on inclined facets of the Pt protrusions [which were not (111) planes], and also on the nonplanar regions of the Pt surface. These epitaxial BaTiO3 grains had (111) preferred orientation relative to the substrate surface. Thus, the BaTiO3 films displayed bimodal growth behavior, with both (100) texture and (111) epitaxy. We propose a model for this behavior based on surface energy considerations.

Epitaxial Growth of Aluminum Nitride on Sapphire and Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
K. Dovidenko ◽  
S. Oktyabrsky ◽  
J. Narayan ◽  
M. Razeghi
Keyword(s):  
Epitaxial Growth ◽  
Substrate Surface ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
High Quality ◽  
Microstructural Characteristics ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTThe microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (10ī2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH3 + N2 gas mixtures. Different degrees of film crystallinity were observed for films grown on α-A12O3 and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al2O3 was demonstrated with a dislocation density of about 2*10 10cm−2 . The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.

Nanomechanical Properties and Nanostructure of CMG and CMP Machined Si Substrates

2008 ◽  
Vol 381-382 ◽  
pp. 525-528 ◽  
Author(s):  
B.L. Wang ◽  
Han Huang ◽  
Jin Zou ◽  
Li Bo Zhou
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Surface ◽  
Transmission Electron Microscopy Analysis ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Electron Microscopy Analysis

Silicon (100) substrates machined by chemo-mechanical-grinding (CMG) and chemicalmechanical- polishing (CMP) were investigated using atomic force microscopy, cross-sectional transmission electron microscopy and nanoindentation. It was found that the substrate surface after CMG was slightly better than machined by CMP in terms of roughness. The transmission electron microscopy analysis showed that the CMG-generated subsurface was defect-free, but the CMP specimen had a crystalline layer of about 4 nm in thickness on the top of the silicon lattice as evidenced by the extra diffraction spots. Nanoindentation results indicated that there exists a slight difference in mechanical properties between the CMG and CMP machined substrates.

Single Crystalline / Porous Amorphous Superlattice Formation by the Etching of MBE Grown Si/Si1−x Gex Layers on Si Substrates

1992 ◽  
Vol 281 ◽  
Author(s):  
T. George ◽  
W. T. Pike ◽  
R. W. Fathauer ◽  
E. W. Jones ◽  
A. Ksendzov
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Reaction Front ◽  
Molecular Beam ◽  
Lattice Strain ◽  
Amorphous State ◽  
Complete Conversion ◽  
Si Substrates ◽  
Amorphous Si

ABSTRACTNovel porous amorphous/crystalline superlattices were produced by the etching of mesas containing superlattices of alternating layers of Si and Si1−xGex. These layers were grown by molecular beam epitaxy on (100) Si substrates and etched in an aqueous HF:HNO3 solution. Preferential attack and amorphization of the Si1−x Gex layers was observed, leading to the formation of alternating layers of single crystal Si and porous amorphous Si1−xGex. The etchant is highly selective and it was possible to etch extremely thin (5nm) Si0.7Ge0.3 layers between 30nm Si layers. Complete conversion of the Si0.7Ge0.3 layers to the porous amorphous state was seen in lμm wide mesas. The role of composition and thickness of the Si1−xGex layers was studied. The variation in the lateral etch depths of the Si1−xGex layers in the superlattices demonstrates that lattice strain in these layers is an important factor in the selectivity of the etch process. As the thickness of the Si1−xGex layers is decreased, transport of the etchant to and the etch products from the reaction front is reduced, limiting the penetration of the etching process. The porosities of these etched Si1−xGex layers were determined to be comparable to measured values for thick etched alloy layers.

(100) Oriented Platinum thin Films Deposited by Dc Magnetron Sputtering On SiO 2/Si Substrates

1996 ◽  
Vol 441 ◽  
Author(s):  
Dong-Yeon Park ◽  
Dong-Su Lee ◽  
Min Hong Kim ◽  
Tae-Soon Park ◽  
Hyun-Jung Woo ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Adhesion Test ◽  
Dc Magnetron Sputtering ◽  
Mixed Gas ◽  
Si Substrates ◽  
Gas Atmosphere ◽  
Sputter Deposited ◽  
Pt Films ◽  
Deposition Conditions

AbstractPlatinum(Pt) films were sputter-deposited on Si02/Si substrates under the mixed gas atmosphere of Ar and O2. Under certain deposition conditions, the films were oriented such that the (100) direction is normal to the substrate surface. The formation of the (100) texture was affected by the gas pressure and film thickness. After annealing at 650 °C for 1 hour, (100) oriented Pt films with the resistivity of pure Pt were obtained. The annealed Pt films all passed a tape adhesion test and had no defects such as hillocks or pinholes. The experimental results from this work are presented.

scholarly journals How Nanoscale Dislocation Reactions Govern Low- Temperature and High-Stress Creep of Ni-Base Single Crystal Superalloys

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 134 ◽  
Author(s):  
David Bürger ◽  
Antonin Dlouhý ◽  
Kyosuke Yoshimi ◽  
Gunther Eggeler
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
High Stress ◽  
Shear Stresses ◽  
Creep Tests ◽  
Shear Creep ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Crystallographic Shear ◽  
Shear System

The present work investigates γ-channel dislocation reactions, which govern low-temperature (T = 750 °C) and high-stress (resolved shear stress: 300 MPa) creep of Ni-base single crystal superalloys (SX). It is well known that two dislocation families with different b-vectors are required to form planar faults, which can shear the ordered γ’-phase. However, so far, no direct mechanical and microstructural evidence has been presented which clearly proves the importance of these reactions. In the mechanical part of the present work, we perform shear creep tests and we compare the deformation behavior of two macroscopic crystallographic shear systems [ 01 1 ¯ ] ( 111 ) and [ 11 2 ¯ ] ( 111 ) . These two shear systems share the same glide plane but differ in loading direction. The [ 11 2 ¯ ] ( 111 ) shear system, where the two dislocation families required to form a planar fault ribbon experience the same resolved shear stresses, deforms significantly faster than the [ 01 1 ¯ ] ( 111 ) shear system, where only one of the two required dislocation families is strongly promoted. Diffraction contrast transmission electron microscopy (TEM) analysis identifies the dislocation reactions, which rationalize this macroscopic behavior.

Study on the Phase Transition from Amorphous Phases to Crystalline TiSi2

1995 ◽  
Vol 402 ◽  
Author(s):  
H. G. Nam ◽  
Nam-Ihn Cho
Keyword(s):  
Phase Transition ◽  
Distribution Functions ◽  
Titanium Silicide ◽  
Atomic Ordering ◽  
Amorphous Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Short Range Ordering ◽  
Silicide Compounds ◽  
Deposition Conditions

AbstractTitanium silicides were prepared by coevaporation of Ti and Si on Si substrates at intermediate substrate temperatures followed by high temperature annealing. Depending on the deposition conditions, transmission electron diffraction analyses revealed two different halo patterns from the as-deposited samples. Variations in the deposition conditions included substrate temperature, deposition rate, and film thickness. Radial distribution functions were calculated to estimate the short range ordering of the amorphous phases. The interatomic distances of all the titanium silicide compounds were also calculated in order to compare them with the atomic ordering of amorphous phases. Phase transition from these amorphous phases to the first crystalline silicide is discussed in terms of kinetic variations as well as the atomic ordering.

Porous Amorphous Si Formation by the Etching of Single Crystal Si Substrates

1992 ◽  
Vol 259 ◽  
Author(s):  
T. George ◽  
R. P. Vasquez ◽  
S. S. Kim ◽  
R.W. Fathauer ◽  
W. T. Pike
Keyword(s):  
Photoelectron Spectroscopy ◽  
Light Emitting ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Spin Resonance ◽  
Amorphous Si ◽  
Si Films ◽  
P Type ◽  
Stain Etching

ABSTRACTThe nature of light-emitting porous Si layers produced by non-anodic stain etching of p-type (100) Si substrates is studied. The layers were characterized by transmission electron microscopy as being amorphous in nature. X-ray photoelectron spectroscopy and electron spin resonance measurements show these layers to be composed mainly of a-Si. The formation mechanism of the a-Si is explored using by stain etching SiGe ‘marker’ layers within epitaxially grown Si films and by high temperature annealing. These experiments provide strong evidence for a spontaneous crystalline-amorphous phase transformation during the etching process.

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