scholarly journals Opportunities and Challenges in MOCVD of βGa2O3 for Power Electronic Devices

2019 ◽  
Vol 28 (01n02) ◽  
pp. 1940007 ◽  
Author(s):  
M. A. Mastro ◽  
J. K. Hite ◽  
C. R. Eddy ◽  
M. J. Tadjer ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Electronic Device ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Material System ◽  
Power Electronic ◽  
Large Area ◽  
Bulk Crystal Growth ◽  
Device Structures ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Recent breakthroughs in bulk crystal growth of β-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area β-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film β-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of β-Ga2O3 and the design criteria for use of this material system in power electronic device structures.

β-(Al,Ga)2O3 for High Power Applications — A Review on Material Growth and Device Fabrication

2019 ◽  
Vol 28 (01n02) ◽  
pp. 1940006 ◽  
Author(s):  
Ashley (Zhe) Jian ◽  
Kamruzzaman Khan ◽  
Elaheh Ahmadi
Keyword(s):  
High Power ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Device Fabrication ◽  
Organic Chemical ◽  
Heteroepitaxial Growth ◽  
Large Area ◽  
Device Structures ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Gallium Oxide has attracted a great deal of attention for power electronics due to its large bandgap (∼4.8 eV) as well as availability of cost effective, large area, high quality substrates. In this article, we will discuss advancements in homoepitaxial and heteroepitaxial growth of β-(Al,Ga)2O3 and their heterostructures via different growth techniques with the emphasis on metal organic chemical vapor deposition, molecular beam epitaxy, and halide vapor phase epitaxy. We will also review various device structures demonstrated for high power applications.

Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides

Nanoscale ◽  
2018 ◽  
Vol 10 (1) ◽  
pp. 336-341 ◽  
Author(s):  
Kehao Zhang ◽  
Bhakti Jariwala ◽  
Jun Li ◽  
Natalie C. Briggs ◽  
Baoming Wang ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Vapor Deposition ◽  
Large Scale ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Large Area ◽  
Metal Dichalcogenides ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Large area 2D MoS2 and WSe2 are integrated on 3D GaN by metal organic chemical vapor deposition (MOCVD). The thickness-dependent vertical tunneling and interlayer charge transfer is carefully studied. This work shows that few layer WSe2 film is the appropriate choice towards device application of synthetic 2D/3D heterostructures.

scholarly journals InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1364
Author(s):  
Ryan C. White ◽  
Hongjian Li ◽  
Michel Khoury ◽  
Cheyenne Lynsky ◽  
Michael Iza ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Defect Density ◽  
Chemical Vapor ◽  
Base Layer ◽  
Organic Chemical ◽  
Material System ◽  
Higher Power ◽  
Metal Organic ◽  
Atomic Probe ◽  
Organic Chemical Vapor Deposition

In this paper, we report the successful demonstration of bright InGaN-based microLED devices emitting in the red spectral regime grown by metal organic chemical vapor deposition (MOCVD) on c-plane semi-relaxed InGaN substrates on sapphire. Through application of an InGaN/GaN base layer scheme to ameliorate high defect density and maintain appropriate lattice constant throughout the growth, high-In quantum wells (QWs) can be grown with improved crystal quality. Improvement to the design of the growth scheme also yields higher power output resulting in an increase to the external quantum efficiency (EQE). Combined, these two improvements allow for an 80 × 80 μm2 microLED device emitting at 609 nm to achieve 0.83% EQE. Furthermore, the true In content of the QW is measured using atomic probe tomography (APT) to confirm the improved In incorporation during high temperature active region growth. These developments represent advancement toward the realization of bright, highly efficient red III-nitride LEDs to be used in RGB applications under one material system.

scholarly journals Catalyst-Assisted Large-Area Growth of Single-Crystal β-Ga2O3 Nanowires on Sapphire Substrates by Metal–Organic Chemical Vapor Deposition

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1031 ◽  
Author(s):  
Chunyang Jia ◽  
Dae-Woo Jeon ◽  
Jianlong Xu ◽  
Xiaoyan Yi ◽  
Ji-Hyeon Park ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Large Area ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Transmission Test

In this work, we have achieved synthesizing large-area high-density β-Ga2O3 nanowires on c-plane sapphire substrate by metal–organic chemical vapor deposition assisted with Au nanocrystal seeds as catalysts. These nanowires exhibit one-dimensional structures with Au nanoparticles on the top of the nanowires with lengths exceeding 6 μm and diameters ranging from ~50 to ~200 nm. The β-Ga2O3 nanowires consist of a single-crystal monoclinic structure, which exhibits strong ( 2 ¯ 01) orientation, confirmed by transmission electronic microscopy and X-ray diffraction analysis. The PL spectrum obtained from these β-Ga2O3 nanowires exhibits strong emissions centered at ~360 and ~410 nm, respectively. The energy band gap of the β-Ga2O3 nanowires is estimated to be ~4.7 eV based on an optical transmission test. A possible mechanism for the growth of β-Ga2O3 nanowires is also presented.

Large area double‐sided YBa2Cu3O7−δ films grown by single‐source metal‐organic chemical vapor deposition

1995 ◽  
Vol 67 (5) ◽  
pp. 712-714 ◽  
Author(s):  
Z. Lu ◽  
J. K. Truman ◽  
M. E. Johansson ◽  
D. Zhang ◽  
C. F. Shih ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Single Source ◽  
Large Area ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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