SOME PHYSICAL PROPERTIES OFBaTiO3–CoFe2O4COMPOSITE

2011 ◽  
Vol 25 (20) ◽  
pp. 2751-2767 ◽  
Author(s):  
D. M. HEMEDA ◽  
A. TAWFIK ◽  
M. M. EL-SHAHAWY
Keyword(s):  
Charge Carrier ◽  
Charge Carrier Mobility ◽  
Initial Permeability ◽  
Charge Carrier Concentration ◽  
X Ray Diffraction ◽  
Polaron Hopping ◽  
Diffraction Patterns ◽  
Two Phases ◽  
Increasing Temperature ◽  
P Type

[X]% BaTiO3[100-x]% CoFe2O4composites (x = 0, 20, 40, 60, 80, and 100) were prepared by the general ceramic method. X-ray diffraction patterns and IR spectra confirmed the presence of two phases beside identified phase in the composites with (x% = 40-80% BaTiO3).The temperature variation of conductivity was mainly attributed to change of the drift mobility rather than to the variation of charge carrier concentration. All the composites showed p-type behaviors in the range of temperature 300–400 K. For T > 400 K all composites showed n-type behavior. At this high temperature, the conduction is mainly due to Fe3+→ Fe2+. Hence, there is a p–n transition.The variation of dielectric constant as a function of temperature showed a peak value at the Curie temperature (around 390 K) of ferroelectric phase in composites. It is also noted that the phase transition temperature Tcvaried for different composites.The relation between charge carrier mobility log (μd) versus (1/T) is nearly linear supporting the polaron hopping model for the conduction. The activation energies calculated from resistivity and that from mobility are in close agreement indicating localized model of charge carrier.The initial permeability increased with increasing temperature which is due to the activation of hopping electrons between Fe3+and Fe2+giving rise to the magnetic moment of the composites.

Influence of Annealing Temperature on the Properties of Zn-Sb Composite Thin Films by Magnetron Sputtering

2015 ◽  
Vol 1096 ◽  
pp. 76-79
Author(s):  
Yu Huan Sun ◽  
Juan Qin ◽  
Guo Hua Wang ◽  
Wei Min Shi
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Composite Thin Films ◽  
X Ray ◽  
Hall Measurements ◽  
Different Temperatures ◽  
Diffraction Patterns ◽  
Increasing Temperature ◽  
P Type

Zn-Sb based composite thin films have been prepared by radio frequency magnetron sputtering using a Zn4Sb3 compound target followed by thermal annealing. Sample structure and surface morphology were analyzed by X-ray diffraction (XRD) and atomic force microscopy (AFM). The electrical properties of the films were studied by Hall measurements. The X-ray diffraction patterns reveal that the intensity of diffraction peak of ZnSb phase is enhanced as temperature increasing. Results of AFM shows the rms roughness is getting big with increasing temperature due to the growing crystal grains. Hall measurements indicate that the Zn-Sb composite thin films annealed at different temperatures are p-type conducting with carrier concentrations being on the order of 1019 cm-3.

Annealing effect on the optical and photoelectrochemical properties of lead oxide

2018 ◽  
Vol 84 (3) ◽  
pp. 30301 ◽  
Author(s):  
Wided Zerguine ◽  
Djamila Abdi ◽  
Farid Habelhames ◽  
Meriem Lakhdari ◽  
Hassina Derbal-Habak ◽  
...  
Keyword(s):  
Lead Oxide ◽  
Orthorhombic Phase ◽  
Heat Treatments ◽  
Photoelectrochemical Properties ◽  
X Ray Diffraction ◽  
Vis Spectroscopy ◽  
Size And Morphology ◽  
Two Phases ◽  
P Type ◽  
The Relationship

Effect of the annealing oxidation time of electrodeposited lead (Pb) on the phase formation of lead oxide (PbO) films is reported. The phase structure, optical properties, size and morphology of the films were investigated by scanning electron microscopy, X-ray diffraction and UV-vis spectroscopy. The relationship between structur and photoelectrochemical properties was investigated. Thin films of PbO produced via air annealing of electrodeposited lead consist of a mixture of two phases, orthorhombic (o-PbO) and tetragonal (t-PbO), that determine the material properties and effectiveness as absorber layer in a photoelectrochemical device. The proportion of tetragonal t-PbO increases for longer heat treatments. After 40 h, the sample consists mainly of tetragonal t-PbO. The p-type semiconducting behavior of lead oxide was studied by photocurrent measurements. Different heat treatments yield variations in the ratio of tetragonal to orthorhombic lead oxide that effect on device performances, where devices with a higher content of tetragonal t-PbO show higher photocurrent than with the orthorhombic phase.

Dependence of the Au/Ni/Si/Ni Contact Properties on the Si-layer Thickness and the Annealing Temperature in p-type GaN Epilayers

2002 ◽  
Vol 17 (5) ◽  
pp. 1019-1023 ◽  
Author(s):  
S.J. Yang ◽  
T.W. Kang ◽  
T.W. Kim ◽  
K.S. Chung
Keyword(s):  
Layer Thickness ◽  
Annealing Temperature ◽  
Electron Beam Evaporation ◽  
Nitrogen Atmosphere ◽  
Specific Contact Resistance ◽  
X Ray Diffraction ◽  
Specific Contact ◽  
Potential Applications ◽  
Increasing Temperature ◽  
P Type

The dependences of the properties of Au/Ni/Si/Ni contacts, deposited on p-GaN epilayers by using electron-beam evaporation, on the Si layer thickness and the annealing temperature were investigated with the goal of producing contacts with low specific resistances. The results of the current–voltage (I–V) curves showed that the lowest specific contact resistance obtained for the Au/Ni/Si/Ni contact with a 1200-Å- thick Si layer on p-type GaN annealed at 700 °C for 1 min in a nitrogen atmosphere was 8.49 × 10-4 Ω cm2. The x-ray diffraction (XRD) measurements on the annealed Au/Ni/Si/Ni/p-GaN/sapphire heterostructure showed that Ni3Si, GaAu, and NiGa layers were formed at the Au/Ni/Si/Ni/p-GaN interfaces. While the intensities corresponding to the Ni3Si layer decreased with increasing annealing temperature above 700 °C, those related to the GaAu and the NiGa layers increased with increasing temperature. These results indicate that the Au/Ni/Si/Ni contacts with 1200-Å-thick Si layers annealed at 700 °C hold promise for potential applications in p-GaN-based optoelectronic devices.

Ferromagnetic properties and Nanocrystallization behavior of Amorphous (Fe0.99Mo0.01)78Si9B13 Ribbons

2001 ◽  
Vol 674 ◽  
Author(s):  
Xiang-Cheng Sun ◽  
J. A. Toledo ◽  
S. Galindo ◽  
W. S. Sun
Keyword(s):  
Amorphous Phase ◽  
Magnetic Ordering ◽  
Metastable Phases ◽  
X Ray Diffraction ◽  
Ferromagnetic Properties ◽  
X Ray ◽  
Diffraction Patterns ◽  
Optimum Annealing Temperature ◽  
Increasing Temperature ◽  
Differential Scanning Calorimeters

ABSTRACTFerromagnetic properties and nanocrystallization process of soft ferromagnetic (Fe0.99Mo0.01)78Si9B13 ribbons are studied by transmission electron microscope (TEM), X-ray diffraction (XRD), Mössbauer spectroscopy (MS), differential scanning calorimeters (DSC) and magnetization measurements. The Curie and crystallization temperature are determined to be TC=665K and Tx = 750K, respectively. The Tx value is in well agreement with DSC measurement results. X-ray diffraction patterns had shown a good reconfirm of two metastable phases (Fe23B6, Fe3B) were formed under in-situ nanocrystallization process. Of which these metastable phases embedded in the amorphous matrix have a significant effect on magnetic ordering. The ultimate nanocrystalline phases of α-Fe (Mo, Si) and Fe2B at optimum annealing temperature had been observed respectively. It is notable that the magnetization of the amorphous phase decreases more rapidly with increasing temperature than those of nanocrystalline ferromagnetism, suggesting the presence of the distribution of exchange interaction in the amorphous phase or high metalloid contents.

SYNTHESIS, PIEZOELECTRIC, DIELECTRIC AND CONDUCTIVITY STUDIES ON Dy2O3 SUBSTITUTED (Bi0.94Na0.94)0.5Ba0.06TiO3 CERAMICS

2011 ◽  
Vol 01 (04) ◽  
pp. 455-464 ◽  
Author(s):  
K. SAMBASIVA RAO ◽  
HAILEEYESUS WORKINEH ◽  
A. SWATHI ◽  
B. S. KALYANI
Keyword(s):  
Low Frequency ◽  
Charge Carrier Concentration ◽  
Frequency Region ◽  
Relaxor Behavior ◽  
Secondary Phases ◽  
X Ray Diffraction ◽  
High Frequency Region ◽  
Pure Perovskite Structure ◽  
Universal Power Law ◽  
Diffraction Patterns

Polycrystalline ( Bi 0.94-x Dy x Na 0.94)0.5 Ba 0.06 TiO 3 ceramics (x = 0, 0.04, and 0.08, designated as BNBT6, BNBT6: 4Dy and BNBT6: 8Dy, respectively) were prepared by conventional high temperature sintering method. The X-ray diffraction patterns show pure perovskite structure with no secondary phases. Lattice parameters and unit cell volumes have decreased due to Dy2O3 substitution. SEM micrographs revealed denser samples (ρrel > 97%) with uniformly distributed grain sizes. The room temperature piezoelectric properties of Dy2O3 substituted sample at x = 0.04 were relatively higher: d33 = 147 pC/N, k p = 28% and Q m = 128. The samples exhibited infinitesimal change in thickness (≈ 15 nm) to an applied voltage of 100 V, which could be utilized in actuator applications. Relaxor behavior and broad dielectric maxima with diffuse phase transition were observed. The value of RT dielectric constant has increased while dielectric loss was decreased due to Dy2O3 substitution. Conductivity in the materials obeys Jonscher's universal power law. The conductivity in the low frequency region is associated with short range translational hopping while it is associated with the reorientational hopping in the high frequency region. The charge carrier concentration term remained constant over the entire temperature range of (30–500°C).

Microstructural properties and formation mechanisms of GaN nanorods grown on Al2O3 (0001) substrates

2009 ◽  
Vol 24 (8) ◽  
pp. 2476-2482
Author(s):  
Kyu H. Lee ◽  
Jeong Y. Lee ◽  
Y.H. Kwon ◽  
Tae W. Kang ◽  
Dong H. Kim ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Hydride Vapor Phase Epitaxy ◽  
Formation Mechanisms ◽  
Gas Mixing ◽  
X Ray Diffraction ◽  
One Dimensional ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Increasing Temperature ◽  
Microscopy Images

X-ray diffraction patterns, scanning electron microscopy images, and transmission electron microscopy images showed that one-dimensional GaN nanorods with [0001]-oriented single-crystalline wurtzite structures were grown on Al2O3 (0001) substrates by hydride vapor-phase epitaxy without a catalyst. The tip morphology of the GaN nanorods became flat with increasing temperature difference between the gas mixing and the substrate zones. The gas mixing temperature significantly affected the formation of the nanorods, and the substrate temperature influenced the morphology and the strain of the GaN nanorods near the GaN/Al2O3 heterointerface. The strain and the stress existing in the GaN layer near the heterointerface were decreased with increasing growth rate. The formation mechanisms of the GaN nanorods grown on the Al2O3 (0001) substrates are described on the basis of the experimental results.

Enhanced Charge Carrier Concentration of SiC/CNT With N- and P-Type Doping Agents

2014 ◽  
Author(s):  
Kyle Edwards ◽  
Mujibur Khan ◽  
Rafael Quirino ◽  
Brenda Beckler ◽  
Saheem Absar
Keyword(s):  
Charge Carrier ◽  
Carrier Concentration ◽  
Raman Spectra ◽  
Structural Changes ◽  
Charge Carrier Concentration ◽  
X Ray ◽  
Seebeck Coefficients ◽  
P Type ◽  
Conductive Properties ◽  
Walled Carbon Nanotubes

Single-walled Carbon nanotubes (SWCNTs) have been shown to have excellent conductive properties. SWCNTs were dispersed in a SiC nanoparticle matrix to form a homogeneous mixture that is both mechanically durable and conductive. The SWCNT amount has been varied. SiC/SWCNT mixtures were then doped with various N- and P-type agents, and the resulting samples were analyzed by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), and X-ray diffraction (XRD). Raman spectra of the samples were also measured for evidence of structural changes. Seebeck coefficients were measured for the doped samples demonstrating the change in thermoelectric properties. Shifts in the G peak (1580.6 cm-1) of the Raman spectra of the samples provides evidence of an increase in charge carrier concentration in the doped samples, correlating well with the Seebeck coefficient results.

X-ray Diffraction and Modelling Studies of Multilayer SnO2 Thin Film Gas Sensors

1995 ◽  
Vol 403 ◽  
Author(s):  
L. E. Depero ◽  
C. Perego ◽  
L. Sangaletti ◽  
G. Sberveglieri
Keyword(s):  
Thin Film ◽  
Orthorhombic Phase ◽  
Sno2 Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Modelling Studies ◽  
Cation Coordination ◽  
Diffraction Patterns ◽  
Two Phases ◽  
The Relationship

AbstractStructural studies have been carried out on SnO2 multilayer thin film grown by the Rheotaxial Growth and Thermal Oxidation method on A120 3 substrates. A preliminary analysis of the X-ray diffraction patterns shows that, in addition to the Sn0 2 cassiterite phase, a strong contribution from an orthorhombic Sn02 phase is present.In the case of the 3-layer film, the orthorhombic phase is structurally and microstructurally stable after an annealing up to 32 h at 400 'C. The cation coordination is similar to that found in cassiterite, but the chains of edge-sharing [SnO6]8- octahedra run in a zig-zag fashion along the [100] direction, each straight unit containing four octahedra. The relationship between the two phases is discussed on the basis of structural simulations including twinning planes in the crystal structure.

Delafossite-CuAlO2 Thin Films Prepared by Thermal Annealing

2011 ◽  
Vol 13 ◽  
pp. 81-86 ◽  
Author(s):  
Hong Ying Chen ◽  
Ming Wei Tsai
Keyword(s):  
X Ray Diffraction ◽  
X Ray ◽  
Conducting Oxides ◽  
Transparent Conducting ◽  
Long Time ◽  
Hot Probe ◽  
Diffraction Patterns ◽  
P Type ◽  
Deposited Films ◽  
Partial Oxygen

Transparent conducting oxides (TCOs) are well known and have been widely used for a long time in optoelectronics industries. The most popular TCOs have n-type characteristics. However p-type material is not well established and examined. The delafossite-CuAlO2 is one of the p-type TCOs. In this paper, amorphous Cu-Al-O films were deposited onto (100) p-type silicon substrate by magnetron sputtering. After that, the films were annealed at 800°C for 2 h in different partial oxygen levels ranging from 5*10-5 to 1 atm with N2, air, and O2. X-ray diffraction patterns showed that as-deposited films were amorphous. In addition, delafossite-CuAlO2 (R m and P63/mmc phase) appeared at 800°C in N2, but monoclinic-CuO and spinel-CuAl2O4 phases existed in air and O2. The formation of delafossite-CuAlO2 phase can be explained with thermodynamics. The optoelectronic properties of delafossite-CuAlO2 films were also measured. The direct optical bandgap was around at 3.3 eV, which is comparable with literature data. The electrical conductivity was obtained to be 6.8*10-3 S/cm. The hot-probe method employed to measure the electrical property of the films, which indicates that delafossite-CuAlO2 films have p-type characteristics.

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