Influence of Annealing Temperature on the Properties of Zn-Sb Composite Thin Films by Magnetron Sputtering

2015 ◽  
Vol 1096 ◽  
pp. 76-79
Author(s):  
Yu Huan Sun ◽  
Juan Qin ◽  
Guo Hua Wang ◽  
Wei Min Shi
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Composite Thin Films ◽  
X Ray ◽  
Hall Measurements ◽  
Different Temperatures ◽  
Diffraction Patterns ◽  
Increasing Temperature ◽  
P Type

Zn-Sb based composite thin films have been prepared by radio frequency magnetron sputtering using a Zn4Sb3 compound target followed by thermal annealing. Sample structure and surface morphology were analyzed by X-ray diffraction (XRD) and atomic force microscopy (AFM). The electrical properties of the films were studied by Hall measurements. The X-ray diffraction patterns reveal that the intensity of diffraction peak of ZnSb phase is enhanced as temperature increasing. Results of AFM shows the rms roughness is getting big with increasing temperature due to the growing crystal grains. Hall measurements indicate that the Zn-Sb composite thin films annealed at different temperatures are p-type conducting with carrier concentrations being on the order of 1019 cm-3.

The Fabrication of Fe-Doped TiCoSb Thin Films by Magnetron Sputtering and Rapid Thermal Annealing

2013 ◽  
Vol 341-342 ◽  
pp. 129-133
Author(s):  
Juan Qin ◽  
Niu Yi Sun ◽  
Guo Hua Wang ◽  
Min Zhang ◽  
Wei Min Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Seebeck Coefficient ◽  
Diffraction Patterns ◽  
P Type ◽  
Narrow Band Gap Semiconductors

TiCoSb-based half-Heusler compounds, which are narrow band gap semiconductors with a high Seebeck coefficient, have been intensively studied in bulk form but rarely in thin films. In this article TiFexCo1-xSb (x=0, 0.17) thin films were synthesized on n-type single crystal Si (100) and MgO (100) substrates by DC magnetron sputtering followed by rapid thermal annealing. The X-ray diffraction patterns show that Fe doping does not affect the crystallization temperature of TiCoSb phase, but seem to induce the formation of binary phases like TiSb. Hall measurements reveal that the undoped TiCoSb thin films are n-type semiconducting, while TiFe0.2Co0.8Sb turns to p-type with half-order higher carrier concentration of 1.5×1021cm-3. The vibrating sample magnetometer spectrum indicate that the TiCoSb thin film is non-magnetic and TiFexCo1-xSb (x=0.17) is weak magnetic.

Deposition of TiO2 Thin Films Using Magnetron Sputtering

2011 ◽  
Vol 217-218 ◽  
pp. 1743-1746
Author(s):  
Xing Long Guo
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Profile Analysis ◽  
Line Profile Analysis ◽  
Analysis Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Average Grain Size ◽  
Diffraction Patterns

TiO2 with 20nm in diameter have been prepared by using magnetron sputtering technique. The structure of these powers was determined by X-ray diffraction experiments. The average grain size and particle size in these powers were measured by the line profile analysis method of X-ray diffraction patterns and by scan electron microscopy, respectively. The thin films were investigated by using XRD, SEM measurements.

scholarly journals Characterization of Ag-Doped p-Type SnO Thin Films Prepared by DC Magnetron Sputtering

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Hoai Phuong Pham ◽  
Thanh Giang Le Thuy ◽  
Quang Trung Tran ◽  
Hoang Hung Nguyen ◽  
Huynh Tran My Hoa ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Carrier Scattering ◽  
Semiconductor Behavior ◽  
Type Semiconductor ◽  
Diffraction Patterns ◽  
P Type ◽  
Tin Monoxide

Crystalline structure and optoelectrical properties of silver-doped tin monoxide thin films with different dopant concentrations prepared by DC magnetron sputtering are investigated. The X-ray diffraction patterns reveal that the tetragonal SnO phase exhibits preferred orientations along (101) and (110) planes. Our results indicate that replacing Sn2+ in the SnO lattice with Ag+ ions produces smaller-sized crystallites, which may lead to enhanced carrier scattering at grain boundaries. This causes a deterioration in the carrier mobility, even though the carrier concentration improves by two orders of magnitude due to doping. In addition, the Ag-doped SnO thin films show a p-type semiconductor behavior, with a direct optical gap and decreasing transmittance with increasing Ag dopant concentration.

Thermoelectric and Structural Properties of Bi1-xTe1+x Thin Films on CdTe(111)

1998 ◽  
Vol 545 ◽  
Author(s):  
Yunki Kim ◽  
Sunglae Cho ◽  
Antonio DiVenere ◽  
George K. Wong ◽  
Jerry R. Meyer ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Hexagonal Phase ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Power Generator ◽  
X Ray ◽  
Compositional Changes ◽  
Diffraction Patterns ◽  
P Type

AbstractThin films of the hexagonal phase of Bi1-xTe1+x have been grown on CdTe(111) substrates using molecular beam epitaxy (MBE). Analysis of X-ray diffraction patterns (θ-2θ scans and rocking curves) of the films shows that their crystallinity depends upon the compositional deviation from stoichiometric BiTe. Measurements of the temperature-dependent thermoelectric power (TEP) of the films reveals that compositional changes cause the TEP to vary from electron dominant (n-type) to hole dominant (p-type), implying their possible application as a thermoelectric cooler or power generator. Measurements of the temperature-dependent resistivity of the films were conducted, and the analysis shows semimetallic behavior. These results demonstrate that Bi1-xTe1+xis an appropriate model system to study the dependencies of thermoelectric and structural properties on binary composition.

Structural and magnetic variations in Ba0.5Sr0.5Fe9Ce1Al2O19 hexaferrites at different sintering temperatures

2021 ◽  
Author(s):  
A.R. Makhdoom ◽  
Qasim Ali Ranjha ◽  
Ubaid-ur-Rehman Ghori ◽  
Muhammad Ahsan Raza ◽  
Binish Raza ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Recording Media ◽  
Secondary Phases ◽  
X Ray Diffraction ◽  
Structural Variations ◽  
X Ray ◽  
Pure Phase ◽  
Different Temperatures ◽  
Diffraction Patterns ◽  
Increasing Temperature

Abstract M-type hexaferrites has attracted researchers due to their ordinary magnetic properties and utilization as media for magnetic recording and microwave devices. In this study we have synthesized Ba0.5Sr0.5Fe9Ce1Al2O19 via conventional ceramic route. The synthesized material is treated against different temperatures and investigated structurally and magnetically by using several techniques such as X-ray diffraction, Scanning electron microscopy, and VSM respectively. Morphology of samples confirms the absence of secondary phases and uniform distribution of particles. X-ray diffraction patterns confirms the formation of pure phase of Hexaferrites. Microstructural analyses show the decrease in porosity and dislocations among sintered samples. Magnetic properties for the samples show a decrease in Ms and Mr with increasing temperature from 1225 °C to 1310 °C, while coercivity shows an increase with increasing temperature and maximum coercivity is observed at 1290 °C. The trends and occurrences can be well-linked to the structural variations and sintering effects. The results suggest that material can be used in various magnetic applications such as Recording media, and memory devices.

Mechanical and Structural Behavior of HfN Thin Films Deposited by Direct Current and Mid-Frequency Magnetron Sputtering

2021 ◽  
Vol 21 (7) ◽  
pp. 4125-4128
Author(s):  
Sung-Yong Chun
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Nitrogen Atmosphere ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hafnium Nitride ◽  
Duty Cycles ◽  
Diffraction Patterns

Nanocrystalline HfN thin films were deposited onto silicon substrates with direct current magnetron sputtering (dcMS) and mid-frequency magnetron sputtering (mfMS) by using hafnium metallic target with 3-inch diameter and 99.9% purity in argon/nitrogen atmosphere, under 4 different pulse frequencies and duty cycles. In order to evaluate the structural, morphological and mechanical properties, we used X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), nanoindentation tests. X-ray diffraction patterns show that films sputtered in dcMS mode have a mixed δ-HfN and HfN0.4 phases, whereas mfMS favor a single δ-HfN phase. mfMS leads to films with the higher mechanical hardness and smaller surface roughness than those of films deposited by dcMS. Hafnium nitride films with a single δ-HfN phase show the highest hardness values of 24.5 GPa while those of mixed δ-HfN and HfN0.4 phases show the lowest 18.3 GPa. In summary, the sputtering technique has a crucial role on the properties of the film and can be suitable used to adjust the structure and hardness of HfN films.

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

Determining the C60 molecular arrangement in thin films by means of X-ray diffraction

2011 ◽  
Vol 44 (5) ◽  
pp. 983-990 ◽  
Author(s):  
Chris Elschner ◽  
Alexandr A. Levin ◽  
Lutz Wilde ◽  
Jörg Grenzer ◽  
Christian Schroer ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Information ◽  
Grazing Incidence ◽  
Test Material ◽  
C60 Fullerene ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Arrangement ◽  
Diffraction Patterns

The electrical and optical properties of molecular thin films are widely used, for instance in organic electronics, and depend strongly on the molecular arrangement of the organic layers. It is shown here how atomic structural information can be obtained from molecular films without further knowledge of the single-crystal structure. C60 fullerene was chosen as a representative test material. A 250 nm C60 film was investigated by grazing-incidence X-ray diffraction and the data compared with a Bragg–Brentano X-ray diffraction measurement of the corresponding C60 powder. The diffraction patterns of both powder and film were used to calculate the pair distribution function (PDF), which allowed an investigation of the short-range order of the structures. With the help of the PDF, a structure model for the C60 molecular arrangement was determined for both C60 powder and thin film. The results agree very well with a classical whole-pattern fitting approach for the C60 diffraction patterns.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

2011 ◽  
Vol 239-242 ◽  
pp. 2752-2755
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Fu Ping Dai ◽  
Dong Ping Zhang ◽  
Ping Fan ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
Equal Distance ◽  
Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

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