Some methods to regulate low-bias negative differential resistance in σ barrier separating nanoscale molecular transport systems

Using the first-principles method which combines the nonequilibrium Green’s function (NEGF) with density functional theory (DFT), the role of defect, dopant, barrier length and geometric deformation for low-bias negative differential resistance (NDR) in two capped armchair carbon nanotubes (CNTs) sandwiching [Formula: see text] barrier are systematically analyzed. We found that this method can regulate the negative differential resistance (NDR) effects such as current peak and peak position. The adjusting mechanism may originate from orbital interaction and orbital reconstruction. Our calculations try to manipulate the transport characteristics in energy space by simply manipulating the structure in real space, which may promise the potential applications in nanomolecular-electronics in the future.

Download Full-text

Spin Filter and Negative Differential Resistance in Carbon-Based Device with Defects

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.727.427 ◽

2017 ◽

Vol 727 ◽

pp. 427-431 ◽

Cited By ~ 1

Author(s):

Zhao Hui Gong ◽

Tong Sheng Xia ◽

Ya Xin Wang

Keyword(s):

Negative Differential Resistance ◽

Density Functional ◽

Differential Resistance ◽

Carbon Chain ◽

Nitrogen Vacancy ◽

Spin Filter ◽

Vacancy Defects ◽

Spintronic Devices ◽

Potential Applications ◽

Negative Differential Resistance Effect

In this work, we report the electronic transport properties of an atomic carbon chain sandwiched between two ferromagnetic zigzag graphene nanoribbon electrodes with symmetrical nitrogen-vacancy defects using the density functional theory combining with the non-equilibrium Green’s function method. Our results show that a perfect spin filter is observed with almost 100% spin polarization. Moreover, we also see the negative differential resistance effect from the spin-up current under a low positive voltage bias. These results may promise potential applications in spintronic devices with multi-function in the future.

Download Full-text

Room-Temperature Negative Differential Resistance in Amorphous Carbon: The Role of Electron Trapping Defects at Device Interfaces

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3044021 ◽

2020 ◽

pp. 1-6

Author(s):

Phuong Y. Le ◽

Amanda Gazzana ◽

Billy J. Murdoch ◽

Dougal G. McCulloch ◽

David R. McKenzie ◽

...

Keyword(s):

Amorphous Carbon ◽

Negative Differential Resistance ◽

Room Temperature ◽

Differential Resistance ◽

Electron Trapping

Download Full-text

Very strong negative differential resistance real‐space transfer transistor using a multiple δ‐doping GaAs/InGaAs pseudomorphic heterostructure

Applied Physics Letters ◽

10.1063/1.114117 ◽

1995 ◽

Vol 66 (6) ◽

pp. 739-741 ◽

Cited By ~ 8

Author(s):

C. L. Wu ◽

W. C. Hsu ◽

M. S. Tsai ◽

H. M. Shieh

Keyword(s):

Negative Differential Resistance ◽

Differential Resistance ◽

Real Space ◽

Real Space Transfer

Download Full-text

Real-space observation of ferroelectrically induced magnetic spin crystal in SrRuO3

Nature Communications ◽

10.1038/s41467-021-22165-5 ◽

2021 ◽

Vol 12 (1) ◽

Author(s):

S. D. Seddon ◽

D. E. Dogaru ◽

S. J. R. Holt ◽

D. Rusu ◽

J. J. P. Peters ◽

...

Keyword(s):

Hall Effect ◽

Density Functional ◽

Hysteresis Loops ◽

Real Space ◽

Zero Field ◽

Force Microscopy ◽

Switching Regime ◽

Conflicting Evidence ◽

Magnetic Spin

AbstractUnusual features in the Hall Resistivity of thin film systems are frequently associated with whirling spin textures such as Skyrmions. A host of recent investigations of Hall Hysteresis loops in SrRuO3 heterostructures have provided conflicting evidence for different causes for such features. We have constructed an SrRuO3-PbTiO3 (Ferromagnetic – Ferroelectric) bilayer that exhibits features in the Hall Hysteresis previously attributed to a Topological Hall Effect, and Skyrmions. Here we show field dependent Magnetic Force Microscopy measurements throughout the key fields where the ‘THE’ presents, revealing the emergence to two periodic, chiral spin textures. The zero-field cycloidal phase, which then transforms into a ‘double-q’ incommensurate spin crystal appears over the appearance of the ‘Topological-like’ Hall effect region, and develop into a ferromagnetic switching regime as the sample reaches saturation, and the ‘Topological-like’ response diminishes. Scanning Tunnelling Electron Microscopy and Density Functional Theory is used to observe and analyse surface inversion symmetry breaking and confirm the role of an interfacial Dzyaloshinskii–Moriya interaction at the heart of the system.

Download Full-text

Photo-induced negative differential resistance and carrier-transport mechanisms in Bi2FeCrO6 resistive switching memory devices

Journal of Materials Chemistry C ◽

10.1039/d1tc03282h ◽

2021 ◽

Vol 9 (39) ◽

pp. 13755-13760

Author(s):

Songcheng Hu ◽

Zhenhua Tang ◽

Li Zhang ◽

Dijie Yao ◽

Zhigang Liu ◽

...

Keyword(s):

Resistive Switching ◽

Negative Differential Resistance ◽

Carrier Transport ◽

Electronic Devices ◽

Differential Resistance ◽

Memory Devices ◽

Transport Mechanisms ◽

Resistive Switching Memory ◽

Potential Applications ◽

Switching Memory

The new effects induced by light in materials have important potential applications in optoelectronic multifunctional electronic devices.

Download Full-text

Effects of different tailoring graphene electrodes on the rectification and negative differential resistance of molecular devices

International Journal of Modern Physics B ◽

10.1142/s021797921850323x ◽

2018 ◽

Vol 32 (29) ◽

pp. 1850323

Author(s):

Ting Ting Zhang ◽

Cai Juan Xia ◽

Bo Qun Zhang ◽

Xiao Feng Lu ◽

Yang Liu ◽

...

Keyword(s):

Electronic Transport ◽

Negative Differential Resistance ◽

Density Functional ◽

Graphene Nanoribbons ◽

Differential Resistance ◽

Voltage Characteristic ◽

Molecular Devices ◽

Current Voltage Characteristic ◽

Functional Theory ◽

Current Voltage

The electronic transport properties of oligo p-phenylenevinylene (OPV) molecule sandwiched with symmetrical or asymmetric tailoring graphene nanoribbons (GNRs) electrodes are investigated by nonequilibrium Green’s function in combination with density functional theory. The results show that different tailored GNRs electrodes can modulate the current–voltage characteristic of molecular devices. The rectifying behavior can be observed with respect to electrodes, and the maximum rectification ratio can reach to 14.2 in the asymmetric AC–ZZ GNRs and ZZ–AC–ZZ GNRs electrodes system. In addition, the obvious negative differential resistance can be observed in the symmetrical AC-ZZ GNRs system.

Download Full-text

An Ab Initio Study on Negative Differential Resistance in Pyrrole Trimer Molecular Device

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.152-153.931 ◽

2010 ◽

Vol 152-153 ◽

pp. 931-934

Author(s):

Cai Juan Xia ◽

Han Chen Liu ◽

Qiu Ping Wang

Keyword(s):

Electronic Transport ◽

First Principles ◽

Negative Differential Resistance ◽

Density Functional ◽

Differential Resistance ◽

Resonance Peak ◽

Molecular Device ◽

Transmission Resonance ◽

Functional Theory ◽

Theoretical Results

The electronic transport properties of pyrrole trimer sandwiched between two electrodes are investigated by using nonequilibrium Green’s function formalism combined first-principles density functional theory. Theoretical results show that the system manifests negative differential resistance (NDR) behavior. A detailed analysis of the origin of negative differential resistance has been given by observing the shift in transmission resonance peak across the bias window with varying bias voltage.

Download Full-text

Negative differential resistance in GeSi core–shell transport junctions: the role of local sp2hybridization

Nanoscale ◽

10.1039/c6nr05087e ◽

2016 ◽

Vol 8 (35) ◽

pp. 16026-16033 ◽

Cited By ~ 2

Author(s):

Nuo Liu ◽

Lei Zhang ◽

Xiaobin Chen ◽

Xianghua Kong ◽

Xiaohong Zheng ◽

...

Keyword(s):

Negative Differential Resistance ◽

Differential Resistance ◽

Core Shell

Download Full-text

Modulation of Low Bias Negative Differential Resistance in a Molecular Device by Adjusting Anchoring Groups

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1070-1072.479 ◽

2014 ◽

Vol 1070-1072 ◽

pp. 479-482

Author(s):

Li Hua Wang ◽

Heng Fang Meng ◽

Bing Jun Ding ◽

Yong Guo

Keyword(s):

Electronic Transport ◽

Negative Differential Resistance ◽

Density Functional ◽

Function Method ◽

Differential Resistance ◽

Carbon Chain ◽

Molecular Device ◽

Functional Theory ◽

The Density Functional Theory ◽

Anchoring Groups

We investigate electronic transport properties of molecular device models constructed by a dipyrimidinyl–dimethyl molecule embedding in a carbon chain, which are then coupled to the gold electrodes through thiol or isocyanide group. Using the density functional theory combined with the nonequilibrium Green’s function method, negative differential resistance behaviors are observed in such molecular junctions. Most importantly, system with the isocyanide group can achieve a larger negative differential resistance at lower bias voltage (0.1V).

Download Full-text