Magnetotransport phenomena in layered conductors under magnetic breakdown

2017 ◽  
Vol 31 (14) ◽  
pp. 1750114
Author(s):  
O. Galbova ◽  
V. G. Peschansky ◽  
D. I. Stepanenko
Keyword(s):  
Magnetic Field ◽  
Electrical Conductivity ◽  
Energy Spectrum ◽  
Hydrostatic Pressure ◽  
Fermi Surface ◽  
Linear Dependence ◽  
Energy Gap ◽  
Electron Energy Spectrum ◽  
External Effects ◽  
Magnetic Breakdown

We study the transport phenomena in layered conductors with rather general electron energy spectrum placed in a high magnetic field [Formula: see text], under conditions when the distance between various sheets of the Fermi surface (FS) may become small under the external effects, such as hydrostatic pressure or impurity atom doping, and electrons can transfer from one sheet of the FS to another due to magnetic breakdown. We calculate the dependence of the in-plane electrical conductivity and magnetoresistance on magnetic field and probability of magnetic breakdown and show that the field-induced quadratic increase of the in-plane resistance in the absence of magnetic breakdown is changed by a linear dependence on [Formula: see text]. With a further reduction of the energy gap between FS sheets, the in-plane resistance is saturated.

THE HALL CONDUCTIVITY OF A DOPED GRAPHENE IN A QUANTIZING MAGNETIC FIELD

2012 ◽  
Vol 26 (28) ◽  
pp. 1250188 ◽  
Author(s):  
MIKHAIL B. BELONENKO ◽  
ANASTASIA V. PAK ◽  
ALEXANDER V. ZHUKOV ◽  
ROLAND BOUFFANAIS
Keyword(s):  
Magnetic Field ◽  
Electrical Conductivity ◽  
Energy Spectrum ◽  
Applied Magnetic Field ◽  
Electron Energy Spectrum ◽  
Landau Levels ◽  
Adsorbed Atom ◽  
Doped Graphene ◽  
Quantizing Magnetic Field ◽  
Different Characteristics

In this paper we study the electron energy spectrum corresponding to Landau levels in doped graphene when an external magnetic field is applied in the direction normal to the graphene planar sheet. The derived dispersion relation for the electrons in the doped graphene allows us to determine the dependence of the electrical conductivity on the applied magnetic field. This relationship between electrical conductivity and applied magnetic field is further analyzed for different characteristics of the impurities; specifically the potential of hybridization and the energy of the adsorbed atom.

Electron g-Factor in Diluted Magnetic Semiconductor Quantum Well with Parabolic Potential in the Presence of Rashba Effect and Magnetic Field

2015 ◽  
Vol 70 (2) ◽  
pp. 109-114 ◽  
Author(s):  
Arif M. Babanlı ◽  
Ekrem Artunç ◽  
Turgut F. Kasalak
Keyword(s):  
Magnetic Field ◽  
Energy Spectrum ◽  
Quantum Well ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Electron Energy Spectrum ◽  
Ion Concentration ◽  
Spin Orbital ◽  
Parabolic Potential ◽  
Diluted Magnetic

AbstractWe have studied the Rashba spin-orbital effect on a diluted magnetic semiconductor (DMS) quantum well with parabolic potential in the presence of a magnetic field parallel to the z axis, taking into account the Zeeman coupling and the s-d exchange interaction between the carriers and the magnetic ions. We have obtained an analytical expression for the electron energy spectrum, which depends on the magnetic ion concentration, temperature, and strength of magnetic field. By using the obtained energy spectrum, we calculated the electron effective g*-factor. We have found that effective g*-factor increases when the magnetic field increases; by increasing the strength of spin-orbit interaction, the electron g*-factor decreases and by increasing the temperature, the electron g*-factor increases.

Electron transport and conduction band structure of GaSb

1981 ◽  
Vol 59 (12) ◽  
pp. 1844-1850 ◽  
Author(s):  
Hyung Jae Lee ◽  
John C. Woolley
Keyword(s):  
Magnetic Field ◽  
Experimental Data ◽  
Electrical Conductivity ◽  
Conduction Band ◽  
Room Temperature ◽  
Energy Gap ◽  
Band Model ◽  
Scattering Coefficients ◽  
Wide Range ◽  
Different Temperatures

Calculations have been made using the Fletcher and Butcher method in a three conduction band model to fit a wide range of experimental transport data for n-type samples of GaSb: viz. Hall coefficient and electrical conductivity as a function of temperature and as a function of pressure at room temperature, magnetoresistance as a function of magnetic field at different temperatures, and Nernst–Ettingshausen coefficients as a function of magnetic field. Various energy gap parameters and scattering coefficients have been taken as adjustable and values determined for these which give good fits to all of the experimental data. Values of mobility for each of the Γ, L, and X bands have then been calculated as a function of temperature.

Electron transport in multilayer structures in a strong magnetic field

Open Physics ◽  
2007 ◽  
Vol 5 (2) ◽  
Author(s):  
Olga Galbova ◽  
Olga Kirichenko ◽  
Danica Krstovska ◽  
Valentin Peschansky
Keyword(s):  
Magnetic Field ◽  
Energy Spectrum ◽  
Electron Transport ◽  
Temperature Gradient ◽  
Strong Magnetic Field ◽  
Linear Response ◽  
External Action ◽  
Electron System ◽  
Electron Energy Spectrum ◽  
Multilayer Structures

AbstractA linear response of the electron system of multilayer conducting structures placed in a strong magnetic field to an external action in the form of an electric field and a temperature gradient is studied theoretically. It is shown that joint investigations of the magnetoresistance and the thermo-emf allows new important information on the structure of the electron energy spectrum to be obtained and the presence of Q1D sheets of the Fermi surface to be revealed.

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