Improving contact performance of graphene on p-type GaN thin films with V-pits microstructures
2018 ◽
Vol 32
(19)
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pp. 1840052
Keyword(s):
This study presents the electrical properties of graphene that directly is contact on two types of p-type GaN thin films. The diameter of several hundred nanometer V-pits were formed on the p-GaN thin films by adjusting the NH3 flow rate during the metal organic chemical vapor deposition epitaxial process. The single-layer graphene with a high transmittance of 97% in the visible range was transferred on p-GaN thin films to form an Ohmic contact. The V-pits provide more carrier transport paths that promote the carrier tunneling into p-GaN thin films, resulting in a better Ohmic contact performance. In addition, the increased current value was attributed to the presence of V-pits on the p-GaN thin films.
2013 ◽
Vol 579
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pp. 160-164
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2016 ◽
Vol 120
(31)
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pp. 17261-17267
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2005 ◽
Vol 34
(8)
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pp. 1172-1176
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2004 ◽
Vol 110
(1)
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pp. 34-37
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2004 ◽
Vol 449-452
◽
pp. 997-1000
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Keyword(s):
2003 ◽
Vol 42
(Part 1, No. 5A)
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pp. 2839-2842
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