Effect of annealing on the morphology and the optical characterization of the AZO:Co thin film prepared by Sol–Gel process

In this work, the ZnO thin film, the Al-doped ZnO (AZO) thin film (0.98M ZnO, 0.02M Al) and the (Al,Co) co-doped ZnO thin film (AZO:Co) (0.95M ZnO, 0.02M Al, 0.03M Co) were deposited on the glass substrate by the Sol–Gel method. We fabricated a sample of the ZnO thin film, a sample of the AZO thin film and three samples of AZO:Co thin films. The spin-coating was used to deposit thin film on the glass substrate. The ZnO and the AZO thin films were annealed at 450[Formula: see text]C while three samples of the AZO:Co thin films were annealed at 300[Formula: see text]C, 450[Formula: see text]C and 600[Formula: see text]C in air for 60 min, respectively. In order to prepare three samples of the AZO:Co thin films, we deposited the (Al,Co) co-doped ZnO on the glass substrate for 20 s then all samples were per-heated at 80[Formula: see text]C for 10 min. we repeated this deposition process five times for each sample. Finally, three samples were annealed at 300[Formula: see text]C, 450[Formula: see text]C and 600[Formula: see text]C in air for 60 min, respectively. The procedure to prepare of the ZnO and AZO thin films was like the AZO:Co thin films except that the annealing temperature was 450[Formula: see text]C. The structural and optical properties of the thin films were investigated by X-ray diffraction technique, UV-Vis spectrophotometer and Field Emission Scanning Electron Microscopy (FESEM). Results indicated that (Al,Co) co-doping in the ZnO thin film improve the optical transmission while changes in the lattice structure is small with respect to the AZO thin film. Also, the AZO:Co thin film which was annealed at 450[Formula: see text]C exhibited simultaneously the high thickness and high optical transmission.

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Silver Doped Zinc Oxide Thin Film Production by Thermionic Vacuum Arc (TVA) Technique

Journal of the chemical society of pakistan ◽

10.52568/000581 ◽

2021 ◽

Vol 43 (3) ◽

pp. 253-253

Author(s):

Mehmet zkan Mehmet zkan ◽

Sercen Sadik Erdem Sercen Sadik Erdem

Keyword(s):

Thin Film ◽

Thin Films ◽

Zinc Oxide ◽

Band Gap ◽

Glass Substrate ◽

Zno Thin Films ◽

Vacuum Arc ◽

Zno Thin Film ◽

Doped Zno ◽

Thermionic Vacuum Arc

In this paper, silver (Ag)doped Zinc Oxide(ZnO) thin films were prepared on glass and silicon substrate by using a thermionic vacuum arc technique. The surface, structural, optical characteristics of silver doped thin films have been examined by X-Ray diffractometer (XRD), field emission scanning emission electron microscopy (FESEM), atomic force microscopy (AFM), and UV-Visible spectrophotometer. As a result of these measurements, Ag, Zn and ZnO reflection planes were determined for thin films formed on Si and glass substrate. Nano crystallites have emerged in FESEM and AFM images. The produced films have low transparency. The optical band gap values were measured by photoluminescence devices at room temperature for thin films produced on silicon and glass substrate. The band gap values are very close to 3.10 eV for Ag doped ZnO thin films. The band gap of un-doped ZnO thin film is approximately 3.3 eV. It was identified that Ag doped changes the properties of the ZnO thin film.

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Effect of Bi dopant on morphological and optical properties of ZnO semiconductor films produced by the sol-gel spin coating process

Materials Testing ◽

10.1515/mt-2020-0123 ◽

2021 ◽

Vol 63 (8) ◽

pp. 778-782

Author(s):

Tülay Yıldız ◽

Nida Katı ◽

Kadriye Yalçın

Keyword(s):

Thin Film ◽

Thin Films ◽

Surface Roughness ◽

Optical Properties ◽

Spin Coating ◽

Sol Gel ◽

Zno Thin Film ◽

Spin Coating Method ◽

Coating Method ◽

Doped Zno

Abstract In this study, undoped semiconductor ZnO thin film and Bi-doped ZnO thin films were produced using the sol-gel spin coating method. By changing each parameter of the spin coating method, the best conditions for the formation of the film were determined via the trial and error method. When the appropriate parameter was found, the specified parameter was applied for each film. The structural, superficial, and optical properties of the films produced were characterized via atomic force microscope (AFM), UV-visible spectroscopy, and Fourier transform infrared (FTIR), and the effects of Bi dopant on these properties were investigated. When the morphological properties of the undoped and Bi-doped ZnO films were examined, it was observed that they had a structure in a micro-fiber shape consisting of nanoparticles. When the surface roughness was examined, it was observed that the surface roughness values became larger as the rate of Bi dopant increased. By examining the optical properties of the films, it was determined that they were direct band transition materials and Bi-doped thin films were involved in the semiconductor range. In addition, optical properties changed positively with Bi dopant. Since Bi-doped ZnO thin film has a wide bandgap and good optical properties, it is a material that can be used in optoelectronic applications.

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Growth and physical properties of sol–gel derived Co doped ZnO thin film

Superlattices and Microstructures ◽

10.1016/j.spmi.2007.04.062 ◽

2007 ◽

Vol 42 (1-6) ◽

pp. 246-250 ◽

Cited By ~ 26

Author(s):

Ki-Chul Kim ◽

Eung-kwon Kim ◽

Young-Sung Kim

Keyword(s):

Thin Film ◽

Physical Properties ◽

Sol Gel ◽

Zno Thin Film ◽

Doped Zno ◽

Co Doped

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Preparation of Aligned ZnO Nanorod Arrays on Sn-Doped ZnO Thin Films by Sonicated Sol-Gel Immersion Fabricated for Dye-Sensitized Solar Cell

Advances in Materials Science and Engineering ◽

10.1155/2014/636725 ◽

2014 ◽

Vol 2014 ◽

pp. 1-8 ◽

Cited By ~ 1

Author(s):

I. Saurdi ◽

M. H. Mamat ◽

M. F. Malek ◽

M. Rusop

Keyword(s):

Thin Film ◽

Thin Films ◽

Sol Gel ◽

Visible Region ◽

Zno Thin Films ◽

Zno Nanorod ◽

Zno Thin Film ◽

Nanorod Arrays ◽

Zno Nanorod Arrays ◽

Doped Zno

Aligned ZnO Nanorod arrays are deposited on the Sn-doped ZnO thin film via sonicated sol-gel immersion method. The structural, optical, and electrical properties of the Sn-doped ZnO thin films were investigated. Results show that the Sn-doped ZnO thin films with small grain size (~20 nm), high average transmittance (96%) in visible region, and good resistivity7.7 × 102 Ω·cm are obtained for 2 at.% Sn doping concentration. The aligned ZnO nanorod arrays with large surface area were also obtained for 2 at.% Sn-doped ZnO thin film. They were grown on sol-gel derived Sn-doped ZnO thin film, which acts as a seed layer, via sonicated sol-gel immersion method. The grown aligned ZnO nanorod arrays show high transmittance at visible region. The fabricated dye-sensitised solar cell based on the 2.0 at.% Sn-doped ZnO thin film with aligned ZnO nanorod arrays exhibits improved current density, open-circuit voltage, fill factor, and conversion efficiency compared with the undoped ZnO and 1 at.% Sn-doped ZnO thin films.

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Electrical Properties of Nanostructured Aluminum Doped Zinc Oxide (ZnO) Thin Film Prepared Using Sol-Gel Spin-Coating Method at Different Doping Concentrations

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.667.507 ◽

2013 ◽

Vol 667 ◽

pp. 507-510 ◽

Cited By ~ 1

Author(s):

N.D. Md Sin ◽

Mohamad Hafiz Mamat ◽

Mohamad Rusop

Keyword(s):

Thin Film ◽

Thin Films ◽

Electrical Properties ◽

Spin Coating ◽

Doping Concentration ◽

Sol Gel ◽

Zno Thin Film ◽

Al Doping ◽

Coating Method ◽

Doped Zno

Aluminum (Al) doped Zinc Oxide (ZnO) thin films were prepared using sol-gel spin-coating method at different doping concentrations. The effects of Al doping concentration at 0~5 at.% on the Al doped ZnO thin film properties have been investigated. The thin films were characterized using Current-Voltage (I-V) measurement and field emission scanning electron microscope (FESEM) for electrical properties and surface morphology, respectively. The I-V measurement result indicated electrical properties of Al doped ZnO thin film improved with Al doping. The FESEM investigations show that the nanoparticles size becomes smaller and denser as the doping concentration increase.

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