ELECTRICAL TRANSPORT PROPERTIES OF DIPHASIC AMORPHOUS-MICROCRYSTALLINE SILICON CARBON ALLOYS

1994 ◽  
Vol 08 (15) ◽  
pp. 2059-2074 ◽  
Author(s):  
F. DEMICHELIS ◽  
C.F. PIRRI ◽  
E. TRESSO
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Carrier Transport ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Microcrystalline Silicon ◽  
Electrical Measurements ◽  
Electrical Transport Properties ◽  
Silicon Carbon ◽  
Band Structure Model

The dark conductivity of undoped diphasic amorphous-microcrystalline silicon carbon alloy films deposited by plasma-enhanced chemical vapor deposition has been studied as a function of temperature in the range 50–450 K, taking into account their composition, optical and structural properties. From electrical measurements the transport properties were examined and interpreted in terms of a band structure model which includes three mechanisms of carrier transport in different ranges of temperature. The comparison with experiments indicates that the results are consistent with the mechanisms and the model proposed.

Electrical transport properties of microcrystalline silicon grown by plasma enhanced chemical vapor deposition

2004 ◽  
Vol 96 (12) ◽  
pp. 7306-7311 ◽  
Author(s):  
Nicola Pinto ◽  
Marco Ficcadenti ◽  
Lorenzo Morresi ◽  
Roberto Murri ◽  
Giuseppina Ambrosone ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Transport Properties ◽  
Vapor Deposition ◽  
Electrical Transport ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
Electrical Transport Properties

scholarly journals Imaging of local structures affecting electrical transport properties of large graphene sheets by lock-in thermography

2019 ◽  
Vol 5 (2) ◽  
pp. eaau3407 ◽  
Author(s):  
H. Nakajima ◽  
T. Morimoto ◽  
Y. Okigawa ◽  
T. Yamada ◽  
Y. Ikuta ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Chemical Vapor ◽  
Atomic Scale ◽  
Electrical Transport Properties ◽  
Large Area ◽  
Graphene Layers ◽  
Device Applications ◽  
Chemical Vapor Deposition Graphene ◽  
Lock In

The distribution of defects and dislocations in graphene layers has become a very important concern with regard to the electrical and electronic transport properties of device applications. Although several experiments have shown the influence of defects on the electrical properties of graphene, these studies were limited to measuring microscopic areas because of their long measurement times. Here, we successfully imaged various local defects in a large area of chemical vapor deposition graphene within a reasonable amount of time by using lock-in thermography (LIT). The differences in electrical resistance caused by the micrometer-scale defects, such as cracks and wrinkles, and atomic-scale domain boundaries were apparent as nonuniform Joule heating on polycrystalline and epitaxially grown graphene. The present results indicate that LIT can serve as a fast and effective method of evaluating the quality and uniformity of large graphene films for device applications.

Significant enhancement of the electrical transport properties of graphene films by controlling the surface roughness of Cu foils before and during chemical vapor deposition

Nanoscale ◽  
2014 ◽  
Vol 6 (21) ◽  
pp. 12943-12951 ◽  
Author(s):  
Dongmok Lee ◽  
Gi Duk Kwon ◽  
Jung Ho Kim ◽  
Eric Moyen ◽  
Young Hee Lee ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Transport Properties ◽  
Sheet Resistance ◽  
Vapor Deposition ◽  
Electrical Transport ◽  
Chemical Vapor ◽  
Significant Enhancement ◽  
Electrical Transport Properties ◽  
Graphene Films

Graphene resistivity decreases as the surface roughness of the copper foils decreases. Small grain polycrystalline graphene films grown on pre-annealed and electropolished copper exhibit a sheet resistance of 210 Ω □−1.

Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition

2002 ◽  
Vol 80 (19) ◽  
pp. 3548-3550 ◽  
Author(s):  
Jae-Ryoung Kim ◽  
Hye Mi So ◽  
Jong Wan Park ◽  
Ju-Jin Kim ◽  
Jinhee Kim ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Transport Properties ◽  
Vapor Deposition ◽  
Electrical Transport ◽  
Chemical Vapor ◽  
Electrical Transport Properties

ELECTRICAL TRANSPORT IN ORGANIC SEMICONDUCTORS

2001 ◽  
Vol 11 (02) ◽  
pp. 585-615 ◽  
Author(s):  
I. H. CAMPBELL ◽  
D. L. SMITH
Keyword(s):  
Transport Properties ◽  
Organic Semiconductors ◽  
Electrical Transport ◽  
Disordered Systems ◽  
Carrier Transport ◽  
Low Cost ◽  
Electrical Transport Properties ◽  
Large Area ◽  
And Performance ◽  
Neighboring Sites

Organic semiconductors have processing and performance advantages for low cost and/or large area applications that have led to their rapid commercialization. Organic semiconductors are π conjugated materials, either small molecules or polymers. Their electrical transport properties are fundamentally distinct from those of inorganic semiconductors. Organic semiconductor thin films are amorphous or polycrystalline and their electronic structures consist of a distribution of localized electronic states with different energies. The localized sites are either individual molecules or isolated conjugated segments of a polymer chain. Electrical transport results from carrier hopping between neighboring sites. At room temperature, equilibration between neighboring sites of different energy is fast enough that carrier transport can be described using a mobility picture. Hopping transport in these disordered systems leads to a mobility that can depend strongly on both the electric field and carrier density. This article presents experimental measurements and theoretical analysis of the electrical transport properties of representative organic semiconductors.

scholarly journals Size-Dependent Electrical Transport Properties in Conducting Diamond Nanostripes

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1765
Author(s):  
Andrew F. Zhou ◽  
Elluz Pacheco ◽  
Badi Zhou ◽  
Peter X. Feng
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Electrical Transport Properties ◽  
Free Standing ◽  
Size Dependent ◽  
Ultrananocrystalline Diamond ◽  
Electron Transport Properties

With the advances in nanofabrication technology, horizontally aligned and well-defined nitrogen-doped ultrananocrystalline diamond nanostripes can be fabricated with widths in the order of tens of nanometers. The study of the size-dependent electron transport properties of these nanostructures is crucial to novel electronic and electrochemical applications. In this paper, 100 nm thick n-type ultrananocrystalline diamond thin films were synthesized by microwave plasma-enhanced chemical vapor deposition method with 5% N2 gas in the plasma during the growth process. Then the nanostripes were fabricated using standard electron beam lithography and reactive ion etching techniques. The electrical transport properties of the free-standing single nanostripes of different widths from 75 to 150 nm and lengths from 1 to 128 μm were investigated. The study showed that the electrical resistivity of the n-type ultrananocrystalline diamond nanostripes increased dramatically with the decrease in the nanostripe width. The nanostripe resistivity was nearly doubted when the width was reduced from 150 nm to 75 nm. The size-dependent variability in conductivity could originate from the imposed diffusive scattering of the nanostripe surfaces which had a further compounding effect to reinforce the grain boundary scattering.

Structural, Magnetic and Electrical Transport Properties of Ternary Compound LaCo2Ge2

2013 ◽  
Vol 455 ◽  
pp. 148-153
Author(s):  
Han Yuan Liu ◽  
Li Fu ◽  
Yong Quan Guo
Keyword(s):  
Transport Properties ◽  
Temperature Coefficient ◽  
Ternary Compound ◽  
Electrical Transport ◽  
Elevated Temperatures ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Electrical Measurements ◽  
Electrical Transport Properties ◽  
Xrd Patterns

Ternary compound LaCo2Ge2 was synthesized and characterized by means of XRD, magnetic and electrical measurements. Rietveld structure refinements of powder XRD patterns confirm that LaCo2Ge2 compound crystallizes with a body-centered tetragonal structure of ThCr2Si2-type (space group I4/mmm) with the unit lattice parameters a=4.105(6) Å and c=10.264(7) Å. Nd, Co and Ge occupy 2a, 4d and 4e crystal positions, respectively. Magnetism measurements show that LaCo2Ge2 is nearly temperature-impendent Pauli paramagnetic down to 100 K, whereas orders diamagnetic at elevated temperatures. The (T) measurement showed that is 0.34625 and a positive temperature coefficient for LaCo2Ge2 is equal to 0.82178, indicating that LaCo2Ge2 exhibits typical semimetallic.

Sign in / Sign up

Export Citation Format

Share Document