ESR AND RAMAN STUDIES OF CHEMICAL BATH DEPOSITED CdS : Ni FILMS

2008 ◽  
Vol 22 (22) ◽  
pp. 2113-2121 ◽  
Author(s):  
U. INTATHA ◽  
S. EITSSAYEAM ◽  
K. PENGPAT ◽  
N. UDOMKAN ◽  
P. LIMSUWAN ◽  
...  
Keyword(s):  
Longitudinal Optical ◽  
Esr Spectra ◽  
Band Gaps ◽  
Longitudinal Optical Phonon ◽  
Phonon Modes ◽  
X Ray ◽  
Glass Substrates ◽  
Spin Resonance ◽  
Xrd Patterns ◽  
Cubic Cds

The CdS : Ni films were fabricated on glass substrates by chemical bath deposition method (CBD), where Ni concentrations are 0%, 10%, 20%, 30% and 40%. X-ray diffractometry (XRD), Raman spectroscopy and electron spin resonance (ESR) were employed to study the film structures. The XRD patterns revealed the presence of cubic CdS and trace of NiS . The Raman spectra were observed at 300 and 600 cm-1, corresponding to the first and second orders of the longitudinal optical phonon modes. Both results confirm that slightly lower order of crystallinity of CdS : Ni was found at the higher concentration of Ni . The ESR spectra showed the presence of F-type defects in CdS : Ni films. The band gaps of the samples were found to increase with the increase of Ni concentration.

MORPHOLOGICAL, STRUCTURAL AND OPTICAL CHARACTERIZATIONS OF Zn-DOPED CdS BUFFER LAYER ELABORATED BY CHEMICAL BATH DEPOSITION

2020 ◽  
Vol 27 (11) ◽  
pp. 2050009
Author(s):  
H. CHERIET ◽  
H. MOUALKIA ◽  
R. BARILLE ◽  
M. ZAABAT ◽  
O. MAHROUA ◽  
...  
Keyword(s):  
Chemical Bath Deposition ◽  
Sem Analysis ◽  
Phonon Modes ◽  
Zn Doping ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Lower Porosity ◽  
Xrd Patterns

Zn-doped CdS layers, with various percentage ratios [Formula: see text] (= [Zn[Formula: see text]]/[Cd[Formula: see text]]%) were grown on glass substrates by chemical bath deposition (CBD). The effect of Zn-doping on different properties of CdS is studied by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy, atomic force microscopy, energy dispersive X-ray analysis and UV-visible diffuse reflectance. The XRD patterns indicated polycrystalline films with (111) orientation and the insertion of Zn does not change the crystallinity of CdS. The Raman spectra show one major peak centered around 300[Formula: see text]cm[Formula: see text] assigned to the first-order longitudinal optic (LO) phonon modes of CdS. The surface morphology visualized by AFM and SEM analysis showed the influence of the Zn-doping on the morphology of the films, the surface roughness is found to decrease from 16.5 to 8.9[Formula: see text]nm with augmenting the ratio [Formula: see text] from 0 to 6%. In regard to the SEM analysis, the increase of [Formula: see text] yielded a lower porosity of the film and voids, and the films become more homogeneous. The EDAX spectra confirmed the existence of Zn in the doped samples. The bandgap decreases from 2.44 to 2.37[Formula: see text]eV, while the transmittance increases from 76 to 86% with augmenting the ratio [Formula: see text].

Effect of Cd Substitution on Structural and Optical Properties of Zn1-xCdxSe Thin Films

2021 ◽  
Vol 1039 ◽  
pp. 382-390
Author(s):  
Arej Kadhim ◽  
Mustafa Kadhim ◽  
Haslan Abu Hassan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Longitudinal Optical ◽  
Raman Shift ◽  
Longitudinal Optical Phonon ◽  
Phonon Modes ◽  
Elemental Ratios ◽  
X Ray ◽  
Cdse Thin Film ◽  
Yellow Region

In this research, Zn1-xCdxSe alloys (x from 0 to 1) were synthesized by solid-state microwave (SSM) method of producing thermally evaporated thin films. The cubic structure and the elemental ratios of the films were studied using X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray spectroscopy. The optical characterizations of the as-deposited film in terms of the energy band gap (Eg), photoluminescence (PL), and Raman shift spectra were conducted at the room temperature. The Eg values for the thin films from ZnSe to CdSe were 3.4 to 1.7 eV, respectively. The PL orange emission for ZnSe thin film at 565 nm, whereas 590 nm in the yellow region for CdSe thin film. From Raman shift spectra, the two longitudinal-optical phonon modes (1LO and 2LO) at 240, and 490 cm-1 are assigned for the ZnSe and CdSe thin films.

Effects of Indium Incorporation on the Optical Properties of ZnO Films

2006 ◽  
Vol 11-12 ◽  
pp. 159-162 ◽  
Author(s):  
Yong Ge Cao ◽  
Lei Miao ◽  
Sakae Tanemura ◽  
Yasuhiko Hayashi ◽  
Masaki Tanemura
Keyword(s):  
Optical Transmission ◽  
Full Width Half Maximum ◽  
Structural Disorder ◽  
Band Gaps ◽  
Zno Films ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Optical Band Gaps ◽  
Xrd Patterns

Transparent indium-doped ZnO (IZO) films with low In content (<6at%) were fabricated through radio-frequency (rf) helicon magnetron sputtering. Formation of In-Zn-O solid solution was confirmed by X-ray diffraction (XRD) patterns. Incorporation of indium into ZnO films enhances the optical transmission in the visible wavelength. The optical band-gaps slightly increase from 3.25eV (ZnO) to 3.28eV (In0.04Zn0.96O) and to 3.30eV (In0.06Zn0.94O) due to Burstain-Moss effect. The Urbach tail parameter E0, which is believed to be a function of structural disorder, increases from 79meV (ZnO), to 146meV (In0.04Zn0.96O), and to 173meV (In0.06Zn0.94O), which is consistent with increase of Full-Width Half-Maximum (FWHM) in corresponding XRD patterns. Decreasing in crystal quality with increasing indium concentration is also confirmed by photoluminescence spectra.

A study of adsorption and absorption mechanisms of copper in palygorskite

Clay Minerals ◽  
2008 ◽  
Vol 43 (2) ◽  
pp. 195-203 ◽  
Author(s):  
Y. F. Cai ◽  
J. Y. Xue
Keyword(s):  
Photoelectron Spectroscopy ◽  
Esr Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Tetrahedral Sites ◽  
Octahedral Cation ◽  
Spin Resonance ◽  
Before And After ◽  
Cu Ions ◽  
Complex Ion

AbstractDesorption experiments performed on four Cu-adsorbed palygorskites suggest that the leached Cu2+ ion originates at the surface and/or net-like interstice of the palygorskite fibres. The leached fraction, calculated from the quantities of adsorbed Cu2+ before and after desorption, is <1%. This may indicate that the majority of Cu is in inaccessible structural sites. X-ray diffraction, X-ray photoelectron spectroscopy, Fourier transform infrared (FTIR) spectroscopy and electron spin resonance (ESR) were used to determine the mineralogical character of the Cu-adsorbed palygorskite. Two photoelectron lines at 932.5 and/or 933.7 eV in the narrow scan Cu 2p3/2 spectra show that Cu adsorbed on the surface of palygorskite is in the Cu+ and Cu2+ state. The stretching vibrations of the octahedral cation shift ~3–5 cm–1 towards a greater wavenumber in the FTIR spectra of Cu-adsorbed palygorskite. It can be deduced that the Cu2+ is trapped in the channel of the palygorskite structure. The ESR spectra of the palygorskite give g values of 2.34, 2.12, 2.08 and 2.05, suggesting that some Cu ions cannot be reached by H+. These results confirm that Cu is adsorbed by palygorskite via three possible mechanisms: (1) the Cu is adsorbed onto the surface or in a net-like interstice, and its oxidation states are +1 and +2; (2) Cu forms a complex ion – [Cu(H2O)4]2+ or [Cu(H2O)6]2+, and is trapped in the channel; or (3) Cu enters into the hexagonal channel of the tetrahedral sites or the unoccupied octahedral sites of palygorskite.

Electron-Phonon Scattering in GaN/AlN and GaAs/AlAs Quantum Wells

1997 ◽  
Vol 482 ◽  
Author(s):  
T. F. Forbang ◽  
C. R. McIntyre
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Phonon Spectrum ◽  
Phonon Scattering ◽  
Relaxation Times ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Phonon Modes ◽  
Optical Phonon Scattering ◽  
Electron Phonon Scattering

AbstractWe have studied the effects on the phonon spectrum and on the electron-longitudinal optical phonon scattering in GaN/AlN and GaAs/AlAs quantum wells. Phonon modes and potentials have been calculated for both systems. Results for emission due to electroninterface phonons interactions are presented. We will discuss the implications for relaxation times and electron mobility due to modified LO-phonon scattering in both systems.

Fabrication and Characterization of Nanospinel ZnCr2O4 Using Thermal Treatement Method

2015 ◽  
Vol 1107 ◽  
pp. 301-307 ◽  
Author(s):  
Salahudeen A. Gene ◽  
Elias B. Saion ◽  
Abdul Halim Shaari ◽  
Mazliana A. Kamarudeen ◽  
Naif Mohammed Al-Hada
Keyword(s):  
Particle Size ◽  
Calcination Temperature ◽  
Average Particle Size ◽  
Treatment Method ◽  
Esr Spectra ◽  
Resonance Spectroscopy ◽  
Average Particle ◽  
Face Centered Cubic ◽  
X Ray ◽  
Xrd Patterns

The fabrication of nanospinel zinc chromite (ZnCr2O4) crystals by the means of thermal treatment method from an aqueous solution containing metal nitrates, polyvinyl pyrrolidone (PVP), and deionized water was described in this study. The samples were calcined at various temperatures ranging from 773 to 973 K for the decomposition of the organic compounds and crystallization of the nanocrystals. PVP was used as capping agent to control the agglomeration of the particles. The characterization studies of the fabricated samples were carried out by X-ray diffraction spectroscopy (XRD), transmission electron microscopy (TEM), energy dispersed X-ray spectroscopy (EDX) and electron spin resonance spectroscopy (ESR). The corresponding peaks of Zn, Cr and O were observed in the EDX spectrum of the sample which confirms the formation of ZnCr2O4. The XRD patterns also confirmed the formation of the single faced nanocrystallines of spinel ZnCr2O4 with a face-centered cubic structure. The average particle size of the synthesized crystals was also determined from the XRD patterns using the Scherers formula which shows that the crystallite sizes increases with increase in calcination temperature and was in good agreement with the TEM images which shows cubical ZnCr2O4 nanocrystals with uniform morphology and particle size distributions. The ESR spectra confirmed the existence of unpaired electron in the fabricated samples and the increase in g-factor and decreases in resonant magnetic field (Hr) were observed as the calcination temperature increases.

Nondestructive Characterizations of Au-Catalyzed GaAs Nanowires on GaAs(111)B Substrates via Identifications of 1st Order Optical Phonon Modes Using μ-Raman Spectroscopy

2020 ◽  
Vol 20 (7) ◽  
pp. 4358-4363
Author(s):  
Jeung Hun Park ◽  
Richard S. Kim ◽  
Se-Jeong Park ◽  
Gye-Choon Park ◽  
Choong-Heui Chung
Keyword(s):  
Raman Spectroscopy ◽  
Dose Rate ◽  
Raman Spectra ◽  
Optical Phonon ◽  
Longitudinal Optical ◽  
Transverse Optical ◽  
Longitudinal Optical Phonon ◽  
Phonon Modes ◽  
Gaas Nanowires ◽  
Beam Dose

We report the relation between the catalyst patterning conditions and the intensity of the 1st order Raman active modes in Au-catalyzed GaAs nanowire bundles. We fabricated e-beam lithographically Au-patterned GaAs(111)B substrates by varying the patterning conditions (e-beam dose rate, dot-size and interdot-spacings), and grew GaAs nanowires via vapor–liquid–solid process using a solid-source molecular beam epitaxy. To understand the effects of the substrate preparation conditions and resulting morphologies on the optical characteristics of 1st order transverse optical and longitudinal optical phonon modes of GaAs, we characterized the nanowire bundles using complementary μ-Raman spectroscopy and scanning electron microscopy as a function of the e-beam dose rate (145–595 μC/cm2), inter-dot spacing (100 and 150 nm) and pattern size (100 and 150 nm). Ensembles of single crystalline GaAs nanowires covered with different Au-thickness exhibit a downshift and asymmetric broadening of the 1st order transverse optical and longitudinal optical phonon peaks relative to GaAs bulk modes. We also showed that the sensitivity of a downshift and broadening of Raman spectra are directly related to morphological and surface coverage variations in as-grown nanowires. We observed clear increases of the transverse optical and longitudinal optical intensity as well as the relatively higher peak shift and broadening of Raman spectra from the 100 nm patterning in response to the dose rate change. Strong dependence of Raman spectra of the nanowire bundles on the e-beam dose rate changes are attributed to the variations in spatial density, size, shape and random growth orientation of the wires. We have shown that the identification of the changes in GaAs longitudinal optical and Arsenic anti-site peaks is good indicators to characterize the quality of as-grown GaAs nanowires. Our finding confirms the utilization of Raman spectroscopy as a powerful tool for characterizing chemical, structural, and morphological information of as-grown nanowires within the supporting substrate.

Formation of a miscibility gap in laser-crystallized poly-SiGe thin films

2005 ◽  
Vol 862 ◽  
Author(s):  
M. Weizman ◽  
N. H. Nickeal ◽  
I. Sieber ◽  
B. Yan
Keyword(s):  
Thin Films ◽  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Miscibility Gap ◽  
Phonon Modes ◽  
X Ray ◽  
Average Value ◽  
Glass Substrates ◽  
Mode Splitting ◽  
Lateral Segregation

AbstractLaser-crystallized polycrystalline silicon-germanium (poly-SiGe) thin films on glass substrates were characterized with energy dispersive X-ray and Raman spectroscopy. In the course of the crystallization strong lateral segregation occurs for laser-crystallized poly-Si1-xGex with 0.33 < x < 0.7, causing the local Ge content to differ by as much as 40 % from the average value. The segregation manifests itself in the appearance of well-resolved peaks in the Raman phonon modes. This mode splitting in the Raman spectra is interpreted as the formation of well defined alloy phases with a miscibility gap in between.

Effect of Second Complexing Agent of N2H4 on the Optical and Structural Properties of ZnS Thin Films

2013 ◽  
Vol 591 ◽  
pp. 297-300
Author(s):  
Huan Ke ◽  
Shu Wang Duo ◽  
Ting Zhi Liu ◽  
Hao Zhang ◽  
Xiao Yan Fei
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Structural Properties ◽  
Band Gaps ◽  
Complexing Agent ◽  
X Ray Diffraction ◽  
Sphalerite Structure ◽  
X Ray ◽  
Glass Substrates ◽  
Zns Films

ZnS films have been deposited on glass substrates by chemical bath deposition (CBD). The optical and structural properties were analyzed by UV-VIS spectrophotometer and X-ray diffraction (XRD). The results showed that the prepared thin films from the solution using N2H4 as second complexing agent were thicker than those from the solution without adding N2H4 in; this is due to using second complexing agent of N2H4, the deposition mechanisms change which is conductive to heterogeneous deposition. When using N2H4 as second complexing agent, the crystallinity of ZnS thin films improved with a significant peak at 2θ=28.96°which can be assigned to the (111) reflection of the sphalerite structure. The transmittances of the prepared films from the solution adding N2H4 in as second complexing agent were over 85%, compared to those from the solution without N2H4 (over 95%). The band gaps of the ZnS films from the solution using N2H4 as second complexing agent were larger (about 4.0eV) than that from those from the solution without N2H4 (about 3.98eV), which indicated that the prepared ZnS films from the solution adding N2H4 in as second complexing agent were better used as buffer layer of solar cells with adequate optical properties. In short, using N2H4 as second complexing agent, can greatly improve the optical and structural properties of the ZnS thin films.

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