MORPHOLOGICAL, STRUCTURAL AND OPTICAL CHARACTERIZATIONS OF Zn-DOPED CdS BUFFER LAYER ELABORATED BY CHEMICAL BATH DEPOSITION

2020 ◽  
Vol 27 (11) ◽  
pp. 2050009
Author(s):  
H. CHERIET ◽  
H. MOUALKIA ◽  
R. BARILLE ◽  
M. ZAABAT ◽  
O. MAHROUA ◽  
...  
Keyword(s):  
Chemical Bath Deposition ◽  
Sem Analysis ◽  
Phonon Modes ◽  
Zn Doping ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Lower Porosity ◽  
Xrd Patterns

Zn-doped CdS layers, with various percentage ratios [Formula: see text] (= [Zn[Formula: see text]]/[Cd[Formula: see text]]%) were grown on glass substrates by chemical bath deposition (CBD). The effect of Zn-doping on different properties of CdS is studied by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy, atomic force microscopy, energy dispersive X-ray analysis and UV-visible diffuse reflectance. The XRD patterns indicated polycrystalline films with (111) orientation and the insertion of Zn does not change the crystallinity of CdS. The Raman spectra show one major peak centered around 300[Formula: see text]cm[Formula: see text] assigned to the first-order longitudinal optic (LO) phonon modes of CdS. The surface morphology visualized by AFM and SEM analysis showed the influence of the Zn-doping on the morphology of the films, the surface roughness is found to decrease from 16.5 to 8.9[Formula: see text]nm with augmenting the ratio [Formula: see text] from 0 to 6%. In regard to the SEM analysis, the increase of [Formula: see text] yielded a lower porosity of the film and voids, and the films become more homogeneous. The EDAX spectra confirmed the existence of Zn in the doped samples. The bandgap decreases from 2.44 to 2.37[Formula: see text]eV, while the transmittance increases from 76 to 86% with augmenting the ratio [Formula: see text].

Synthesis and Characterization of Nb-Doped TiO2 Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Diffraction Patterns

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.

scholarly journals The Promotion of Antibacterial Effects of Ti6Al4V Alloy Modified with TiO2Nanotubes Using a Superoxidized Solution

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Ernesto Beltrán-Partida ◽  
Benjamin Valdez-Salas ◽  
Alan Escamilla ◽  
Aldo Moreno-Ulloa ◽  
Larysa Burtseva ◽  
...  
Keyword(s):  
Bacterial Adhesion ◽  
Sem Analysis ◽  
Ti6al4v Alloy ◽  
Antibacterial Efficacy ◽  
Antibacterial Effects ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Bacterial Morphology

The purpose of the present study was to synthetize 80 nm diameter TiO2 nanotubes (NTs) on Ti6Al4V alloy using a commercially superoxidized water (SOW) enriched with fluoride to reduce anodization time and promote the antibacterial efficacy againstStaphylococcus aureus(S. aureus). The alloy discs were anodized for 5 min and as a result, NTs of approximately 80 nm diameters were obtained with similar morphology as reported in previous studies using longer anodization times (1-2 h). Filed emission-scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy (EDX) were used to characterize the materials surfaces. The NTs showed significantly decreasedS. aureusviability after 1, 3, and 5 days of culture in comparison to nonanodized alloy. Likewise, SEM analysis also suggested lower bacterial adhesion on the NTs surface. No differences in bacterial morphology and topography were observed on both materials, as analyzed by SEM and atomic force microscopy (AFM). In conclusion, 80 nm diameter NTs were grown on Ti6Al4V alloy in 5 min by using a SOW solution enriched with fluoride, which resulted in a material with promoted antibacterial efficacy againstS. aureusfor up to 5 days of in vitro culture when compared to nonanodized alloy.

ESR AND RAMAN STUDIES OF CHEMICAL BATH DEPOSITED CdS : Ni FILMS

2008 ◽  
Vol 22 (22) ◽  
pp. 2113-2121 ◽  
Author(s):  
U. INTATHA ◽  
S. EITSSAYEAM ◽  
K. PENGPAT ◽  
N. UDOMKAN ◽  
P. LIMSUWAN ◽  
...  
Keyword(s):  
Longitudinal Optical ◽  
Esr Spectra ◽  
Band Gaps ◽  
Longitudinal Optical Phonon ◽  
Phonon Modes ◽  
X Ray ◽  
Glass Substrates ◽  
Spin Resonance ◽  
Xrd Patterns ◽  
Cubic Cds

The CdS : Ni films were fabricated on glass substrates by chemical bath deposition method (CBD), where Ni concentrations are 0%, 10%, 20%, 30% and 40%. X-ray diffractometry (XRD), Raman spectroscopy and electron spin resonance (ESR) were employed to study the film structures. The XRD patterns revealed the presence of cubic CdS and trace of NiS . The Raman spectra were observed at 300 and 600 cm-1, corresponding to the first and second orders of the longitudinal optical phonon modes. Both results confirm that slightly lower order of crystallinity of CdS : Ni was found at the higher concentration of Ni . The ESR spectra showed the presence of F-type defects in CdS : Ni films. The band gaps of the samples were found to increase with the increase of Ni concentration.

scholarly journals Electronic and vibrational decoupling in chemically exfoliated bilayer 2D-V2O5

2021 ◽  
Author(s):  
Reshma P R ◽  
Anees Pazhedath ◽  
Ganesan Karuppiah ◽  
Arun Prasad ◽  
Sandip Dhara
Keyword(s):  
Transition Metal ◽  
Photoelectron Spectroscopy ◽  
Density Functional ◽  
Blue Shift ◽  
X Ray Diffraction ◽  
Phonon Modes ◽  
Visible Absorption ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

Abstract Recently emerged transition metal oxide (TMO) based 2D nanostructures are gaining a foothold in advanced applications. Unlike, 2D transition metal dichalchogenides, it is strenuous to obtain high quality thin TMOs due to exotic surface reconstruction during synthesis. Herein, we report the synthesis of bilayer thin 2D-V2O5 nanosheets using chemical exfoliation. Synchrotron X-ray diffraction, X-ray photoelectron spectroscopy and atomic force microscopy substantiate the successful formation of bilayer thin 2D-V2O5. Ultraviolet-visible absorption spectra exhibit a thickness dependent blue shift in the optical band gap, signifying the emergence of electronic decoupling. Raman spectroscopy fingerprinting shows a thickness dependent vibrational decoupling of phonon modes. Further, it has been verified by computing the lattice vibrational modes using density functional perturbation theory. In this study, the manifestation of the electronic and vibrational decoupling is used as a novel probe to confirm the successful exfoliation of bilayer 2D-V2O5 from its bulk counterpart.

The Effect of Solution Temperature on Electrodeposit-ZnO Thin Film

2013 ◽  
Vol 594-595 ◽  
pp. 1131-1135 ◽  
Author(s):  
Fariza Mohamad ◽  
Connie Anak Abang ◽  
Nik Hisyamudin Muhd Nor ◽  
Masanobu Izaki
Keyword(s):  
Thin Film ◽  
Zinc Nitrate ◽  
Solution Temperature ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Nitrate Hydrate ◽  
Atomic Force ◽  
Xrd Patterns

Zinc Oxide (ZnO) has been successfully electrodeposited on a fluorine doped tin oxide (FTO) coated glass substrates using a simple aqueous solution containing zinc nitrate hydrate by low temperature galvanostatic electrolysis. The solution temperature of zinc nitrate hydrate was varied from 60°C to 75°C in order to investigate the effect of solution temperature on electrodeposit-ZnO thin film. The properties of ZnO film were investigated by X-ray diffraction (XRD), Field-Emission Scanning electron microscope (FE-SEM) and Atomic force microscopy (AFM). The solution temperature shows a significant effect on structural and morphological of deposit-ZnO. The XRD patterns exhibited the increment of (002)-ZnO peak when the solution temperature increased and the highest peak was observed at 75°C. The morphology of ZnO was changed from planar to nanopillar with the solution temperature. In conclusion, ZnO nanopillar with an excellent structural properties was obtained at solution temperature of 75°C.

Chemically Deposited Silver Antimony Selenide Thin Films for Photovoltaic Applications

2009 ◽  
Vol 1165 ◽  
Author(s):  
Jorge G. Garza ◽  
Sadasivan Shaji ◽  
Ana Maria Arato Tovar ◽  
Eduardo Perez Tijerina ◽  
Alan Castillo Roderiguez ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Close Contact ◽  
Optical Transmittance ◽  
Halogen Lamp ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Antimony Selenide

AbstractSilver antimony selenide (AgSbSe2) thin films were prepared by heating sequentially deposited antimony sulphide (Sb2S3), silver selenide (Ag2Se) and Ag thin films in close contact with a selenium thin film. Sb2S3 thin film was prepared from chemical bath containing SbCl3 and Na2S2O3, Ag2Se from the bath containing AgNO3 and Na2SeSO3 and Se thin films from an acidified solution of Na2SeSO3, at room temperature on cleaned glass substrates. Ag thin film was deposited by vacuum thermal evaporation. The annealing temperature was varied from 300-390°C in vacuum (∼10−3 Torr) for 1 h. X-ray diffraction analysis showed the films formed at 350 °C was polycrystalline AgSb(S,Se)2 or AgSbSe2 depending on selenium thin film thickness. Morphology of these films was analyzed using Atomic Force Microscopy and Scanning Electron Microscopy. The elemental analysis was done using Energy Dispersive X-ray technique. Optical characterization of the thin films was done by optical transmittance spectra. The electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: Glass/ITO/CdS/AgSbSe2/Ag was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this PV structure showed Voc=370 mV and Jsc=0.5 mA/cm2 under illumination using a tungsten halogen lamp.

Optical and Electrical Properties of SnS: Ag Films as Solar Cell Absorbers

2009 ◽  
Vol 60-61 ◽  
pp. 11-15 ◽  
Author(s):  
Pe Min Lu ◽  
Hong Jie Jia ◽  
Shu Ying Cheng
Keyword(s):  
X Ray Diffraction ◽  
Average Roughness ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Semiconducting Properties ◽  
Direct Band ◽  
Diffraction Peaks ◽  
P Type

SnS and Ag films were deposited on glass substrates by vacuum thermal evaporation successively, then they were annealed in N2 ambience at a temperature of 300 oC for 2h. By controlling the Ag evaporation voltage to roughly alter content of Ag in SnS films, different Ag-doped SnS films were obtained. The microstructures, composition and properties of the films were characterized with X-ray diffraction ( XRD ), atomic force microscopy(AFM) and some other methods. With the increase of Ag evaporation voltage (VAg), there exist new phases of Ag8SnS6 and Ag2S, whose intensity of diffraction peaks increases with the increasing Ag-dopant, and the average roughness of the films varies from 18.7nm to 23.6nm, and grain size increases from 192nm to 348nm. With the increase of VAg, the evaluated direct band gap Eg of the films decreases from 2.28eV(undoped) to 2.05eV (VAg=70V), the carrier concentration value and Hall mobility of the films diminishes from 2.048×1014cm-3 and 25.96 cm2.v-2.s-1 to 1.035×1016 cm-3 and 5.66 cm2.v-2.s-1, respectively; while the resistivity of the films decreases sharply from 1174Ω.cm(undoped ) to 107Ω.cm (VAg=70V ). All the films are of p-type conductivity. The above results show that the semiconducting properties of the SnS films have been improved by silver-doping.

scholarly journals Effect some Factors on the Structural Properties of the CdS Thin Films Prepared by Chemical Bath Deposition

2016 ◽  
Vol 64 ◽  
pp. 1-10
Author(s):  
Fatma Salamon
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Deposition Time ◽  
X Ray Diffraction ◽  
Hexagonal Crystal ◽  
X Ray ◽  
Glass Substrates ◽  
Cds Thin Films ◽  
Temperature Deposition ◽  
Xrd Patterns

CdS thin films were prepared by chemical bath deposition technique (CBD) onto the glass substrates at different conditions of preparation. The obtained samples are studied by X-Ray diffraction (XRD). The XRD patterns of CdS samples revealed the formation with a hexagonal crystal structure P36mc, and the clear effect of the concentration of thiourea, cadmium sulfide, NaOH, time and temperature deposition, and annealing temperature, on the structure of the prepared thin films. through the study, we found that the samples have preferred orientation along [002], also the thickness of thin films decrease with deposition time after certain value, with the appearance of free cadmium. It has been found that the 200°C is the best temperature for annealing to improve the other structural and physical properties of films.

ON THE ELECTRONIC TRANSPORT MECHANISM IN MAGNETRON-SPUTTERED POLYCRYSTALLINE ZnO THIN FILMS

2010 ◽  
Vol 24 (31) ◽  
pp. 6079-6090 ◽  
Author(s):  
I. I. RUSU ◽  
M. SMIRNOV ◽  
G. G. RUSU ◽  
A. P. RAMBU ◽  
G. I. RUSU
Keyword(s):  
Thin Films ◽  
Electronic Transport ◽  
Hexagonal Structure ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Crystallite Boundary

Zinc oxide ( ZnO ) thin films were deposited onto glass substrates by d.c. magnetron sputtering. The structural analysis, by X-ray diffraction and atomic force microscopy, indicate that the studied films are polycrystalline and have a wurtzite (hexagonal) structure. The film crystallites are preferentially oriented with (002) planes parallel to the substrates. The mechanism of electronic transport is explained in terms of Seto's model elaborated for polycrystalline semiconducting films (crystallite boundary trapping theory). Some parameters of used model (impurity concentration, density and energy of the trapping states, etc.) have been calculated. The optical bandgap (Eg0 = 3.28–3.37 eV ) was determined from absorption spectra.

scholarly journals Effects of Deposition Time on the Morphology, Structure, and Optical Properties of PbS Thin Films Prepared by Chemical Bath Deposition

2018 ◽  
Vol 2018 ◽  
pp. 1-8 ◽  
Author(s):  
B. Abdallah ◽  
A. Ismail ◽  
H. Kashoua ◽  
W. Zetoun
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Photoelectron Spectroscopy ◽  
Deposition Time ◽  
Optical Band Gap ◽  
Optical Transmittance ◽  
Xrd Analysis ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

Lead sulfide thin films were prepared by chemical bath deposition (CBD) on both glass and Si (100) substrates. XRD analysis of the PbS film deposited at 25°C showed that the prepared films have a polycrystalline structure with (200) preferential orientation. Larger grains could be obtained by increasing the deposition time. The prepared films were also chemically characterized using X-ray photoelectron spectroscopy (XPS), which confirmed the presence of lead and sulfur as PbS. While energy dispersive X-ray spectroscopy (EDX) technique was used to verify the stoichiometry of the prepared films. Atomic force microscopy (AFM) was used to study the change in the films’ morphology with the deposition time. The effect of the deposition time, on both optical transmittance in the UV-Vis-NIR region and the structure of the film, was studied. The obtained results demonstrated that the optical band gap decreased when the thickness increased.

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