EMBEDDED CONTROLLED PULSE CONVERTER FED INDUCTION HEATER

2010 ◽  
Vol 19 (03) ◽  
pp. 581-595 ◽  
Author(s):  
D. KIRUBAKARAN ◽  
S. RAMA REDDY
Keyword(s):  
Output Power ◽  
Induction Heating ◽  
Pulse Current ◽  
Heating Process ◽  
Switching Frequency ◽  
Wide Range ◽  
Power Switches ◽  
Bridge Rectifier ◽  
Current Converter ◽  
Pulse Converter

A pulse-current converter topology for induction heating is simulated and implemented. The possibility and expediency of the pulse current for induction heating have been demonstrated. The converter comprises the input filter, input reactor, bridge rectifier, two power switches, two coils mutually coupled with the input reactor and the heating inductor (load), where the output power is controlled by a switching frequency. The steady-state analysis of the converter operation and its computer simulation has been performed. The simulation on the computer are shown to be in good agreement with the theoretical results. The following two goals have been achieved: (a) the analysis of the heating process with the pulse current has been performed; and (b) the appropriate scheme of the pulse-current supply has been developed. The scheme fulfills the requirements of modern power supplies: sine form of the input current, unity power factor, soft commutation and a wide range of output power. This configuration can be used for heating, annealing, melting and hardening in the power range of 250–300 kW.

Performance Comparison Between Surface-mount and Embedded Power Modules

2019 ◽  
Vol 2019 (DPC) ◽  
pp. 000647-000670
Author(s):  
Gerald Weis
Keyword(s):  
Printed Circuit Board ◽  
State Of The Art ◽  
Circuit Board ◽  
Switching Frequency ◽  
Surface Mount ◽  
Printed Circuit ◽  
Power Transistors ◽  
Wide Range ◽  
Power Switches ◽  
Embedded Power

Increasing efficiency in power electronic circuits requires innovative cooling concepts and a low impedance connection in the power path as well as low inductance driving circuits placed as close as possible to the main power switches. A direct comparison between state-of-the-art standard surface-mount build-ups and power switches embedded directly into the printed circuit board shows the high potential of integrated electronics. Measurements at defined operating point(s) verify improved thermal performance due to more heat spreading area, as well as higher achievable switching speed. For performance benchmarking two similar versions of half bridge circuits in DC-DC buck configuration were built to be compared in measurement. The first configuration uses standard, state-of-the-art SMD packages assembled onto the module. For the second half bridge module an embedded power path was used: The power transistors (GaN HEMT devices) are mounted inside the printed circuit board (PCB) and galvanically isolated from the heat sink pad on top of the package. Both versions use exactly the same schematic, layer stack-up and copper structure on the six layers used. A slightly different laser drill configuration was necessary because embedded parts are connected by copper filled laser drill holes. This measure was taken to optimize the modules according to their technology. Each module has an NTC thermistor mounted at the same distance to the half bridge transistors, and is used to indicate the temperature of the transistor dies during measurement. To cover a wide range of operational conditions the devices under test (DUTs) were stressed under hard switching operation (HSW) as well as triangular current mode (TCM). HSW causes more stress because the opposite transistor is switched before the whole energy of Coss has been discharged. In TCM the current through the inductor is becoming negative for a short time period and discharges the Coss capacitors of the power transistors. The test conditions were set as follows: 150V, 11A with 200kHz switching frequency in HSW mode. The switching behavior is similar, because both modules uses the same power transistors. Due to less parasitic impedance at the embedded module the turn-on behavior is slightly improved at the embedded module. Embedding as a new, innovative concept is compared to standard technologies. First measurements show that the embedded DUT stays 20K below the temperature of the standard module while running at the same load current. Additionally fewer disturbances were observed at the embedded module.

scholarly journals An Efficient Power Control Technique for High-Frequency Resonant Inverter in Induction Heating System

2018 ◽  
Vol 8 (6) ◽  
pp. 3530-3535
Author(s):  
A. Kumar ◽  
D. Sarkar ◽  
P. K. Sadhu
Keyword(s):  
Power Control ◽  
Output Power ◽  
Induction Heating ◽  
High Frequency ◽  
Average Power ◽  
Control Technique ◽  
Average Output ◽  
Resonant Inverter ◽  
Wide Range ◽  
Bus Voltage

An efficacious and reliable power control technique has been developed which can be used to regulate the output power of a high-frequency full bridge series resonant inverter (HF-FBSRI) in an induction heating (IH) system. In this paper, a modified buck-boost converter is presented to control the DC link/bus voltage which maintains the IH system under resonant mode and optimizes the performance of the IH system. Controlled DC link/bus voltage has been applied to this HF- FBSRI to control the average output power in the IH system. Using this aimed control technique, a wide range of output powers has been controlled and consistent performance of the IH system has been achieved. ZVS switching technique has been used to reduce the switching losses. Varying average power has been obtained at different duty cycles ranging from 0.2 to 0.8 with variable DC link voltage and it has been corroborated using PSIM environment for an IH system rated at 5500W.

scholarly journals Induction Heating in Domestic Cooking and Industrial Melting Applications: A Systematic Review on Modelling, Converter Topologies and Control Schemes

Energies ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 6634
Author(s):  
Pradeep Vishnuram ◽  
Gunabalan Ramachandiran ◽  
Thanikanti Sudhakar Babu ◽  
Benedetto Nastasi
Keyword(s):  
Induction Heating ◽  
High Efficiency ◽  
Electronic Device ◽  
Frequency Control ◽  
Switching Frequency ◽  
Density Control ◽  
Wide Range ◽  
Control Schemes ◽  
Converter Topologies ◽  
And Control

In the current scenario, power electronic device-based induction heating (IH) technologies are widely employed in domestic cooking, industrial melting and medical applications. These IH applications are designed using different converter topologies, modulation and control techniques. This review article mainly focuses on the modelling of half-bridge series resonant inverter, electrical and thermal model of IH load. This review also analyses the performance of the converter topologies based on the power conversion stages, switching frequency, power rating, power density, control range, modulation techniques, load handling capacity and efficiency. Moreover, this paper provides insight into the future of IH application, with respect to the adaptation of wide band-gap power semiconductor materials, multi-output topologies, variable-frequency control schemes with minimum losses and filters designed to improve source-side power factor. With the identified research gap in the literature, an attempt has also been made to develop a new hybrid modulation technique, to achieve a wide range of power control with high efficiency. A 100 W full-bridge inverter prototype is realised both in simulation and hardware, with various modulation schemes using a PIC16F877A microcontroller. The results are compared with existing techniques and the comparisons reveal that the proposed scheme is highly viable and effective for the rendered applications.

A numerical study of the effect of the number of turns of coil on the heat produced in the induction heating process in the 3d model

2018 ◽  
Vol 18 (3) ◽  
pp. 408-419
Author(s):  
A J shokri ◽  
M H Tavakoli ◽  
A Sabouri Dodaran ◽  
M S Akhondi Khezrabad ◽  
◽  
...  
Keyword(s):  
Induction Heating ◽  
3D Model ◽  
Numerical Study ◽  
Heating Process

scholarly journals The induction heating process modelling of the waveguide paths’ flanges

2021 ◽  
Vol 1047 (1) ◽  
pp. 012027
Author(s):  
A V Milov ◽  
V S Tynchenko ◽  
S O Kurashkin ◽  
V E Petrenko ◽  
D V Rogova ◽  
...  
Keyword(s):  
Induction Heating ◽  
Process Modelling ◽  
Heating Process

scholarly journals Identification of DC Thermal Steady-State Differential Inductance of Ferrite Power Inductors

Energies ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3854
Author(s):  
Salvatore Musumeci ◽  
Luigi Solimene ◽  
Carlo Stefano Ragusa
Keyword(s):  
Steady State ◽  
Input Voltage ◽  
Switching Frequency ◽  
Ohmic Losses ◽  
Steady State Temperature ◽  
Wide Range ◽  
Average Current ◽  
Power Inductors ◽  
Saturable Inductor ◽  
Thermal Steady State

In this paper, we propose a method for the identification of the differential inductance of saturable ferrite inductors adopted in DC–DC converters, considering the influence of the operating temperature. The inductor temperature rise is caused mainly by its losses, neglecting the heating contribution by the other components forming the converter layout. When the ohmic losses caused by the average current represent the principal portion of the inductor power losses, the steady-state temperature of the component can be related to the average current value. Under this assumption, usual for saturable inductors in DC–DC converters, the presented experimental setup and characterization method allow identifying a DC thermal steady-state differential inductance profile of a ferrite inductor. The curve is obtained from experimental measurements of the inductor voltage and current waveforms, at different average current values, that lead the component to operate from the linear region of the magnetization curve up to the saturation. The obtained inductance profile can be adopted to simulate the current waveform of a saturable inductor in a DC–DC converter, providing accurate results under a wide range of switching frequency, input voltage, duty cycle, and output current values.

X-band Silicon Carbide IMPATT Oscillator

2001 ◽  
Vol 680 ◽  
Author(s):  
Konstantin V. Vassilevski ◽  
Alexandr V. Zorenko ◽  
Konstantinos Zekentes
Keyword(s):  
Silicon Carbide ◽  
Pulse Duration ◽  
Output Power ◽  
Pulse Current ◽  
Input Pulse ◽  
Threshold Current ◽  
Avalanche Breakdown ◽  
X Band

ABSTRACTPulsed X-band (8.2 - 12.4 GHz) IMPATT oscillators have been fabricated and characterized. They utilized 4H-SiC diodes with single drift p+-n-n+ structures and avalanche breakdown voltages of about 290 V. The microwave oscillations appeared at a threshold current of 0.3 A. The maximum measured output power was about 300 mW at input pulse current of 0.35 A and pulse duration of 40 ns.

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