scholarly journals Температурная зависимость ширины запрещенной зоны монокристаллов MnAgIn-=SUB=-7-=/SUB=-S-=SUB=-12-=/SUB=-

2019 ◽  
Vol 53 (12) ◽  
pp. 1621
Author(s):  
И.В. Боднарь ◽  
Б.Т. Чан ◽  
В.Н. Павловский ◽  
И.Е. Свитенков ◽  
Г.П. Яблонский
Keyword(s):  
Experimental Data ◽  
Temperature Dependence ◽  
Band Gap ◽  
Single Crystals ◽  
Spinel Structure ◽  
Semiconductor Materials ◽  
Transmittance Spectra ◽  
Temperature Range

AbstractMnAgIn_7S_12 single crystals 16 mm in diameter and ~40 mm in length are grown by planar crystallization of the melt. It is shown that the material grown crystallizes with the formation of the cubic spinel structure. From the transmittance spectra recorded in the region of fundamental absorption in the temperature range 10–320 K, the band gap E _ g of the single crystals and its temperature dependence are determined. The dependence has a shape typical of most semiconductor materials: as the temperature is lowered, the band gap E _ g increases. A calculation is carried out, and it is shown that the calculated values are in agreement with the experimental data.

scholarly journals PSEUDO-GAP FEATURES OF INTRINSIC TUNNELING IN (HgBr2)-Bi2212 SINGLE CRYSTALS

1999 ◽  
Vol 13 (29n31) ◽  
pp. 3758-3763 ◽  
Author(s):  
AUGUST YURGENS ◽  
DAG WINKLER ◽  
TORD CLAESON ◽  
SEONG-JU HWANG ◽  
JIN-HO CHOY
Keyword(s):  
Temperature Dependence ◽  
Single Crystals ◽  
Room Temperature ◽  
Unit Cell ◽  
Superconducting Gap ◽  
Axis Direction ◽  
Temperature Range ◽  
Dynamic Conductance

The c-axis tunneling properties of both pristine Bi2212 and its HgBr 2 intercalate have been measured in the temperature range 4.2-250 K. Lithographically patterned 7-10 unit-cell heigh mesa structures on the surfaces of these single crystals were investigated. Clear SIS-like tunneling curves for current applied in the c-axis direction have been observed. The dynamic conductance d I/ d V(V) shows both sharp peaks corresponding to a superconducting gap edge and a dip feature beyond the gap, followed by a wide maximum, which persists up to a room temperature. Shape of the temperature dependence of the c-axis resistance does not change after the intercalation suggesting that a coupling between CuO 2-bilayers has little effect on the pseudogap.

Plastic Deformations in L10-Ordered Single Crystals with their c/a Ratios Less than Unity

2007 ◽  
Vol 561-565 ◽  
pp. 459-462
Author(s):  
Katsushi Tanaka ◽  
Hiromitsu Ide ◽  
Yoshinori Sumi ◽  
Kyosuke Kishida ◽  
Haruyuki Inui
Keyword(s):  
Shear Stress ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Room Temperature ◽  
The Other ◽  
Compressive Deformation ◽  
Positive Temperature ◽  
Plastic Deformations ◽  
Temperature Range ◽  
Critical Resolved Shear Stress

Compressive deformation of L10-ordered single crystals of FePd whose c/a ratio less than unity have been investigated from room temperature to 823 K. The results show that the critical resolved shear stress (CRSS) for octahedral glide of ordinary dislocations is smaller than that of super-lattice dislocations in all the temperature range investigated, that is the opposite sense to the case of Ti-56 mol% Al. The CRSS for ordinary dislocations virtually independent to the temperature. On the other hand, the CRSS for super dislocations exhibits a weak positive temperature dependence from room temperature up to 573 K and decreases in higher temperatures.

scholarly journals A COMPARATIVE ANALYSIS OF EFFECT OF TEMPERATURE ON BAND-GAP ENERGY OF GALLIUM NITRIDE AND ITS STABILITY BEYOND ROOM TEMPERATURE USING BOSE–EINSTEIN MODEL AND VARSHNI’S MODEL

2017 ◽  
Vol 18 (2) ◽  
pp. 151-157 ◽  
Author(s):  
Md. Abdullah Al Humayun ◽  
AHM Zahirul Alam ◽  
Sheroz Khan ◽  
MohamedFareq AbdulMalek ◽  
Mohd Abdur Rashid
Keyword(s):  
Comparative Analysis ◽  
Temperature Dependence ◽  
Band Gap ◽  
Room Temperature ◽  
Band Gap Energy ◽  
Semiconductor Materials ◽  
Gap Energy ◽  
Einstein Model ◽  
S Model ◽  
Energy Dependent

High temperature stability of band-gap energy of active layer material of a semiconductor device is one of the major challenges in the field of semiconductor optoelectronic device design. It is essential to ensure the stability in different band-gap energy dependent characteristics of the semiconductor material used to fabricate these devices either directly or indirectly. Different models have been widely used to analyze the band-gap energy dependent characteristics at different temperatures. The most commonly used methods to analyze the temperature dependence of band-gap energy of semiconductor materials are: Passler model, Bose–Einstein model and Varshni’s model. This paper is going to report the limitation of the Bose–Einstein model through a comparative analysis between Bose–Einstein model and Varshni’s model. The numerical analysis is carried out considering GaN as it is one of the most widely used semiconductor materials all over the world. From the numerical results it is ascertained that below the temperature of 95o K both the models show almost same characteristics. However beyond 95o K Varshni’s model shows weaker temperature dependence than that of Bose–Einstein model. Varshni’s model shows that the band-gap energy of GaN at 300o K is found to be 3.43eV, which establishes a good agreement with the theoretically calculated band-gap energy of GaN for operating at room temperature.

Temperature Dependence of the Band Gap of MnAgIn7S12 Single Crystals

2019 ◽  
Vol 53 (12) ◽  
pp. 1593-1596
Author(s):  
I. V. Bodnar ◽  
B. T. Chan ◽  
V. N. Pavlovskii ◽  
I. E. Svitsiankou ◽  
G. P. Yablonskii
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Single Crystals

Growth, Structure, and Temperature Dependence of the Band Gap of Mn0.3Ag0.7In4.1S6.8 Single Crystals

2020 ◽  
Vol 87 (5) ◽  
pp. 820-824
Author(s):  
I. I. Bodnar ◽  
V. N. Pavlovskii ◽  
I. E. Svitsiankou ◽  
G. P. Yablonskii
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Single Crystals ◽  
Growth Structure

Diffusion von In und Cu in ZnS-Einkristallen

1969 ◽  
Vol 24 (9) ◽  
pp. 1301-1306 ◽  
Author(s):  
H. Nelkowski ◽  
G. Bollmann
Keyword(s):  
Experimental Data ◽  
Activation Energy ◽  
Diffusion Equation ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Diffusion Constant ◽  
Pair Formation ◽  
Concentration Profiles ◽  
Radioactive Tracers ◽  
Calculated Concentration

Abstract The diffusion of In and Cu in ZnS single crystals was investigated by means of radioactive tracers. The diffusion constant Do and the activation energy EA of the diffusion equation D = D0 · exp(- EA/kT) were determined by analysing the temperature dependence of the concentration profiles. The result for ln EA = 2,2 eV, D0 = 30cm2 s-1) is interpreted as a diffusion via Zn vacancies and that for Cu (EA - 0,79 eV, D0 = 2,6 · 10-3 cm2 s-1) as a diffusion via interstitial sites which probably is influenced by Zn vacancies. - Preceding doping with In significantly retards the Cu diffusion, consistent with the model of Cu-In pair formation. The reasons for some deviations of the experimental data from the calculated concentration profiles are discussed. - Diffusion measurements with high Cu-concentrations yield a Cu-solubility of 300 ppm at 840 K and 1000 ppm at 950 K.

Composition and temperature dependence of band gap and lattice constants of MgxCd1–xSe single crystals

2006 ◽  
Vol 3 (8) ◽  
pp. 2665-2668 ◽  
Author(s):  
Duck-Tae Kim ◽  
Sang-An Park ◽  
Woon-Jo Jeong ◽  
Gye-Choon Park ◽  
Moon-Seog Jin ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Single Crystals ◽  
Lattice Constants

Ionic Conductivity of Li2ZnTi3O8 Single Crystal

2011 ◽  
Vol 497 ◽  
pp. 26-30 ◽  
Author(s):  
Shinichi Furusawa ◽  
Hiroshi Ochiai ◽  
Khoji Murayama
Keyword(s):  
Ionic Conductivity ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Powder Diffraction ◽  
Floating Zone ◽  
Zinc Titanate ◽  
X Ray ◽  
Temperature Range ◽  
First Time

Single crystals of lithium zinc titanate (Li2ZnTi3O8) were grown in a double-mirror type optical floating-zone furnace for the first time. Single crystals were characterized by X-ray powder diffraction and Laue measurements. The ionic conductivity of the single crystals was measured in the temperature range of 400–700 K. Below 600 K, the ionic conductivity of the single crystal is one to two orders of magnitude higher than that of polycrystalline Li2ZnTi3O8. In the temperature range of 550–600 K, the temperature dependence of the ionic conductivity shows non-Arrhenius behaviour.

g-Values for γ-irradiated water as a function of temperature

1990 ◽  
Vol 68 (5) ◽  
pp. 712-719 ◽  
Author(s):  
A. John Elliot ◽  
Monique P. Chenier ◽  
Denis C. Ouellette
Keyword(s):  
Experimental Data ◽  
Hydrogen Peroxide ◽  
Hydroxyl Radical ◽  
Temperature Dependence ◽  
Atomic Hydrogen ◽  
Molecular Hydrogen ◽  
Hydrated Electron ◽  
Temperature Range ◽  
Increasing Temperature

The g-values of primary species formed in the γ-radiolysis of water have been estimated for the temperature range 25–300 °C. The g-values for the hydrated electron, the hydroxyl radical, and molecular hydrogen all increase approximately 50% over this temperature range. The g-values for the minor products, hydrogen peroxide and atomic hydrogen, probably also increase with temperature; however, there is evidence from some of the experimental data which suggests that these g-values may slightly decrease with increasing temperature. Keywords: radiolysis, g-values, temperature dependence.

Temperature dependence of heats of vaporization of saturated hydrocarbons C5-C8; Experimental data and an estimation method

1979 ◽  
Vol 44 (3) ◽  
pp. 637-651 ◽  
Author(s):  
Vladimír Majer ◽  
Václav Svoboda ◽  
Slavoj Hála ◽  
Jiří Pick
Keyword(s):  
Experimental Data ◽  
Temperature Dependence ◽  
Estimation Method ◽  
Saturated Hydrocarbons ◽  
Heat Of Vaporization ◽  
Temperature Range ◽  
Entropy Of Vaporization ◽  
Heats Of Vaporization

Heats of vaporization of a group of 10 alkanes C6-C8 and 2 cycloalkanes were measured in a temperature range of 25-80 °C. By combining the obtained results with selected literature data, a set of very accurate values of heats of vaporization as functions of temperature was made up for 22 saturated C5-C8 hydrocarbons. This set was employed for the verification of the proposed estimation method for the determination of heat of vaporization which is based on the principle of combination of a contribution method with constant entropy-of-vaporization rules. In this way it is then possible to estimate heats of vaporization of C4-C9 alkanes with an error lower than 0.5%.

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