The Design of AlGaN/GaN HEFT-Micro-Accelerometer and Temperature- Dependence Electrical Performance
2011 ◽
Vol 483
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pp. 174-179
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In this paper, We use a novel principle to detect acceleration and report how I-V characteristics and piezoresistance coefficient of AlGaN/GaN HEFT-micro-accelerometer are affected by setting different temperatures. It is shown that saturation current of device would go down if the temperature goes up, which is about 0.028mA/°C, based on the research. However, the device can work well at the temperature range of -50°C to 50°C, which indicates that it can work safely in the larger temperature range.
2020 ◽
Vol 393
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pp. 112435
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1999 ◽
Vol 13
(29n31)
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pp. 3758-3763
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Keyword(s):
1992 ◽
Vol 47
(1-2)
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pp. 177-181
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Keyword(s):
2004 ◽
Vol 385
(5-6)
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pp. 502-506
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