METAL-DOPED ZnO THIN FILMS: SYNTHESIS, ETCHING CHARACTERISTIC, AND APPLICATION TEST FOR ORGANIC LIGHT EMITTING DIODE (OLED) DEVICES

2010 ◽  
Vol 17 (01) ◽  
pp. 121-127 ◽  
Author(s):  
SANG-HUN NAM ◽  
MYOUNG-HWA KIM ◽  
DONG GEUN YOO ◽  
SEONG HUN JEONG ◽  
DOO YONG KIM ◽  
...  
Keyword(s):  
Thin Films ◽  
Ph Value ◽  
Light Emitting Diode ◽  
Etching Rate ◽  
Rf Magnetron Sputtering ◽  
High Resistivity ◽  
Zno Films ◽  
Li Doping ◽  
Doped Zno ◽  
Metal Doped

Metal-doped ZnO films with various metal contents ( Al , Ag and Li of 0–10 wt.%) were prepared by RF magnetron sputtering system with specially designed ZnO targets. The structural, optical and electrical properties of MZO films depended on the type and content of doping in target. Electrical resistivity of LZO thin films increased with increasing Li doping amounts between 0 and 4 wt.%, suggesting that an epitaxial LZO film has high resistivity. We observed morphology in pure ZnO films by using different etchant. In addition, etching rate were contrasted with the etchant concentration and pH. The etching rate is proportional exponentially to pH value. These data will be the technical basis for TCO application. Also, the dry etching rate decreased with increasing the Cl 2 concentration in CH 4/ H 2/ Ar + additive Cl 2 gas mixture but metal dopants were etched effectively.

Preparation and Characterization of Zn1-XMnxO Thin Films on SiO2 Substrates

2012 ◽  
Vol 560-561 ◽  
pp. 820-824
Author(s):  
Yue Zhi Zhao ◽  
Fei Xiong ◽  
Guo Mian Gao ◽  
Shi Jing Ding
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Flat Surfaces ◽  
Atomic Force ◽  
Mn Content ◽  
Doped Zno ◽  
Mn Doped

Mn-doped ZnO thin films were prepared on SiO2substrates by using a radio-frequency(rf) magnetron sputtering in order to investigate structure and optical proprieties of the films. X-ray diffraction (XRD), Atomic force microscope (AFM) and UV-VIS spectrophotometry were employed to characterize the Mn-doped ZnO films. The results showed that the shape of the XRD spectrum was remarkably similar to that of the un-doped ZnO film; the film had mainly (002) peak, and indicate that the structure of the films was not disturbed by Mn-doped. The film had rather flat surfaces with the peak-to-tail roughness of about 25nm. Mn-doping changed the band gap of the films, which increased with the increase of the Mn content.

Highly c-Axis Oriented Al-Doped ZnO Thin Films Grown in Premixed H2/Ar Sputtering Gas

2007 ◽  
Vol 29-30 ◽  
pp. 215-218 ◽  
Author(s):  
Eun Soo Lee ◽  
Rachmat Adhi Wibowo ◽  
Kyoo Ho Kim
Keyword(s):  
Thin Films ◽  
Deposition Temperature ◽  
Rf Magnetron Sputtering ◽  
Preferential Orientation ◽  
Zno Thin Films ◽  
Zno Films ◽  
Sputtering Deposition ◽  
Infra Red ◽  
Doped Zno ◽  
Low Deposition Temperature

Al-doped ZnO (AZO) thin films were grown on Corning 1737 glass by RF Magnetron Sputtering under premixed hydrogen-argon (H2/Ar) sputtering gas. It is found that the introduction of various H2 concentrations during sputtering deposition altered the properties of Al-doped ZnO films. The presence of H2 during AZO growth at low deposition temperature leads to the growth of a-axis preferential orientation crystal whereas c-axis preferential orientation occurred only at higher deposition temperature. Highly oriented c-axis (002) crystal has been successfully grown under 3% H2 concentration at 200°C deposition temperature. Film’s resistivity is appeared to be a function of H2 concentration. Additional H2 concentration in sputtering gas increased of film’s transmittance up to 85% at visible-near infra red spectra while it caused the Burstein-Moss shift toward the blue region at 350 nm wavelength.

scholarly journals Investigation of the room temperature ferromagnetism in transition metal doped ZnO thin films

2020 ◽  
Author(s):  
Arun Kumar ◽  
Pooja Dhiman ◽  
Sanjeev Aggarwal ◽  
Mahavir Singh
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Structural Information ◽  
Room Temperature Ferromagnetism ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Average Grain Size ◽  
Vis Spectroscopy ◽  
Doped Zno ◽  
Metal Doped

Abstract In the present work, we have studied the ferromagnetic nature of the (Fe, Ni) co-doped Zn1-x-y NiyFexO (y = 0.01 and x = 0.01, 0.03, 0.05) thin films fabricated through the RF magnetron sputtering on Silicon (400) substrate. Structural information of the deposited transition metal-doped ZnO thin films was studied through X-ray Diffraction (XRD) techniques. The surface roughness and average grain size of the thin films examine through Atomic Force Microscopy (AFM). The optical band gaps of the thin films have been analyzed through the UV-Vis spectroscopy and it was appropriate for the optoelectronic devices. Tau’c Plots were used for the calculation of the band gap by extrapolating the (αhν) = 0, the straight-line portion of the plot to zero absorption coefficient. The magnetic study of these thin films confirmed the ferromagnetic (FM) behavior. RT-FM in all the deposited thin films was discuses on the base of polaron percolation theory.

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

Deposition of Piezoelectric ZnO Films by RF Magnetron Sputtering and its Application to SAW Devices

2007 ◽  
Vol 1035 ◽  
Author(s):  
Seol Hee Choi ◽  
Chan Hyoung Kang
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Silicon Wafers ◽  
Center Frequency ◽  
High Resistivity ◽  
Chemical Vapor Deposition Method ◽  
Zno Films ◽  
Optimum Process ◽  
Optimum Conditions ◽  
Saw Devices

AbstractHighly c-axis oriented, dense, and fine-grained polycrystalline ZnO films with smooth surface and high resistivity were deposited on 4 inch silicon wafers by employing ZnO targets in a radio-frequency (RF) magnetron sputtering system. By changing applied RF power, substrate temperature and O2/Ar gas ratio, the optimum process parameters were found to be 150 W, 200 °C and 30/70, respectively. Applying the ZnO films deposited under these optimum conditions, surface acoustic wave (SAW) devices of ZnO/IDT/SiO2/Si structure were fabricated by conventional photolithography and etching processes. The interdigital transducers (IDT), made of the aluminum deposited by DC magnetron sputter, were patterned as 2.5/2.5 μm of finger width/spacing. Another type of SAW filter of IDT/ZnO/diamond/Si structure was fabricated. In this structure, high-quality nanocrystalline diamond (NCD) films were deposited on 4 inch silicon wafers by direct current (DC) plasma assisted chemical vapor deposition method using H2-CH4 mixture as precursor gas. On the top of the diamond films, ZnO films were deposited under the optimum conditions. The aluminum IDT pattern was fabricated on the ZnO/diamond layered films. The characteristics of the fabricated SAW devices were evaluated in terms of center frequency, insertion loss, and wave propagation velocity.

Dependence of Film Thickness on Properties of Al Doped ZnO Thin Films

2011 ◽  
Vol 194-196 ◽  
pp. 2305-2311
Author(s):  
Ying Ge Yang ◽  
Dong Mei Zeng ◽  
Hai Zhou ◽  
Wen Ran Feng ◽  
Shan Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Electrical Parameter ◽  
Substrate Surface ◽  
Rf Magnetron Sputtering ◽  
Thickness Effect ◽  
Visible Range ◽  
Glass Substrates ◽  
Doped Zno

In this study high quality of Al doped ZnO (ZAO) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature in order to study the thickness effect upon their structure, electrical and optical properties. XRD results show that the films are polycrystalline and with strongly preferred (002) orientation perpendicular to substrate surface whatever the thickness is. The crystallite size was calculated by Williamson-Hall method, while it increases as the film thickness increased. The lattice stress is mainly caused by the growth process. Hall measurements revealed electrical parameter very dependent upon thickness when the thickness of ZAO film is lower than 700 nm. The resistivity decreased and the carrier concentration and Hall mobility increases as the film thickness increased. When film thickness becomes larger, only a little change in the above properties was observed. All the films have high transmittance above 90% in visible range. Red shift of the absorption edge was observed as thickness increased. The optical energy bandgap decreased from 3.41eV to 3.30 eV with the increase of film thickness.

Structural and magnetic properties of transition metal doped ZnO films

2010 ◽  
Vol 518 (8) ◽  
pp. 2152-2156 ◽  
Author(s):  
C.G. Jin ◽  
Y.Gao ◽  
X.M. Wu ◽  
M.L. Cui ◽  
L.J. Zhuge ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Transition Metal ◽  
Zno Films ◽  
Structural And Magnetic Properties ◽  
Doped Zno ◽  
Metal Doped

Transition Metal-Doped ZnO: A Comparison of Optical, Magnetic, and Structural Behavior of Bulk and Thin Films

2006 ◽  
Vol 957 ◽  
Author(s):  
William E. Fenwick ◽  
Matthew H. Kane ◽  
Zaili Fang ◽  
Tahir Zaidi ◽  
Nola Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Optical Transmission ◽  
Magnetic Hysteresis ◽  
Structural Quality ◽  
Bulk Crystals ◽  
Transmission Measurements ◽  
Doped Zno ◽  
Metal Doped ◽  
Metal Incorporation

ABSTRACTTransition metal-doped ZnO bulk crystals and thin films have been investigated to determine the effects of transition metal incorporation on optical, magnetic, and structural properties of ZnO. A modified melt growth technique was used to grow bulk Zn1-xMnxO, Zn1-xCoxO, and Zn1-xFexO. Optical transmission measurements show an apparent shift in absorption edge with increasing transition metal incorporation. Raman spectroscopy also shows increasing lattice disorder with increasing transition metal concentration. ZnO thin films doped with Ni, Co, and Gd were grown by metalorganic chemical vapor deposition (MOCVD). While the Co-doped thin films showed antiferromagnetic behavior, magnetic hysteresis was observed in the Ni-doped and Gd-doped thin films. Structural quality was verified with X-ray diffraction (XRD), and optical properties were investigated using room temperature photoluminescence (PL) and optical transmission measurements. Properties of ZnO:TM bulk crystals and thin films are compared and used to discuss possible origins of ferromagnetism in these materials.

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