FERROMAGNETISM IN SEMICONDUCTOR C–Ni FILMS AT DIFFERENT ANNEALING TEMPERATURE

2016 ◽  
Vol 23 (03) ◽  
pp. 1650002 ◽  
Author(s):  
VALI DALOUJI ◽  
SMOHAMMAD ELAHI
Keyword(s):  
Coercive Field ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Composite Films ◽  
Nickel Concentration ◽  
Maximum Value ◽  
Different Temperatures ◽  
The Difference ◽  
Quartz Substrates ◽  
Microstructure And Magnetic Properties

In this work, the microstructure and magnetic properties of carbon–nickel (C–Ni) composite films annealed at different temperatures (300–1000[Formula: see text]C) were investigated. The films were grown by radio frequency magnetron sputtering on quartz substrates at room temperature. The nickel concentration in the films are affected by changing of the value of evaporation nickel atoms and measured by Rutherford backscattering spectroscopy (RBS). Values of coercive field were measured under both increasing and decreasing applied magnetic field. It is shown that the coercive field of films strongly dependent on the annealing temperature and at 500[Formula: see text]C films has maximum value of 93.67[Formula: see text]Oe. The difference in the coercive fields increased for films annealed from 300 to 500[Formula: see text]C and then decreased from 500 to 1000[Formula: see text]C. The ID/IG ratio of Raman spectra would indicate the presence of higher sp2 bonded carbon in the films annealed at 800[Formula: see text]C.

IMPACTS OF ANNEAL TEMPERATURE ON THE STRUCTURAL, MAGNETIC AND OPTICAL PROPERTIES OF THE Fe:LaSrFeO4 COMPOSITE FILM

2016 ◽  
Vol 23 (06) ◽  
pp. 1650060
Author(s):  
J. SHI ◽  
Y. L. JIA ◽  
X. H. LI ◽  
X. H. DAI ◽  
J. X. GUO ◽  
...  
Keyword(s):  
Room Temperature ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Composite Films ◽  
Annealed Sample ◽  
Absorption Properties ◽  
Oxygen Loss ◽  
Quartz Substrates ◽  
Anneal Temperature ◽  
Intrinsic Strain

We prepared the pulsed laser deposited Fe:LaSrFeO4 (LSFO) composite films on quartz substrates by decomposing the La[Formula: see text]Sr[Formula: see text]FeO3 target at room temperature in a high vacuum. Impacts of anneal temperature on the structural and physical properties have been investigated, and the systematic changes were found in structural, magnetic and optical absorption properties upon annealing. The LSFO (110) spacing decreases with the increase of annealing temperature, which can be attributed to the release of intrinsic strain; and there is an increase in spacing for the 750[Formula: see text]C annealed sample, which is ascribed to the oxygen loss in LSFO films.

Thermal Annealing Dependence of High-Frequency Magnetoimpedance in Amorphous and Nanocrystalline FeSiBCuNb Ribbons

2008 ◽  
Vol 8 (6) ◽  
pp. 2873-2882 ◽  
Author(s):  
B. Hernando ◽  
V. M. Prida ◽  
M. L. Sanchez ◽  
J. Olivera ◽  
C. Garcia ◽  
...  
Keyword(s):  
High Frequency ◽  
Annealing Temperature ◽  
Driving Frequency ◽  
Network Analyzer ◽  
Frequency Range ◽  
Isothermal Heating ◽  
Amorphous Ribbons ◽  
Maximum Value ◽  
Different Temperatures ◽  
Nanocrystalline Sample

The magnetoimpedance (MI) effect in Fe73.5Si13.5B9Nb3Cu1 melt-spun amorphous ribbons has been studied in the frequency range (1–500 MHz). Isothermal heating treatments in a furnace have been employed to nanocrystallize the ribbons (1 h at 565 °C in a vacuum of 10–3 mbar), while other samples were annealed at lower temperatures (400 and 475 °C during 1 h), in order to evaluate the influence of the annealing temperature on the MI effect. The high-frequency impedance was measured using a technique based on the reflection coefficient measurements of a specific transmission line by using a network analyzer. Frequency dependence of the MI ratio, ΔZ/Z, and both resistive, ΔR/R, and reactive, ΔX/X, components of magnetoimpedance were measured in the amorphous and annealed states, at different temperatures. A maximum value of the MI ratio of about 50% at a driving frequency of 18 MHz is obtained in the nanocrystalline (annealed at 565 °C) ribbon. Maxima for R/R of about 81% at 85 MHz and ΔX/X around 140% at 5 MHz were also achieved. It is revealed that the microstructural evolution in the nanocrystalline sample leads to a magnetic softening, an optimum domain structure and a permeability which is sensitive to frequency and applied magnetic field, generating a large MI response.

Influence of Post-annealing Temperature on the Properties of Ti-Doped In2O3 Transparent Conductive Films by DC Ratio-frequency Sputtering

2011 ◽  
Vol 1352 ◽  
Author(s):  
Lei Li ◽  
Chen Chen ◽  
Chengjun Dong ◽  
JiaJia Cao ◽  
Jingmin Dang ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Optical Transmittance ◽  
Conductive Films ◽  
Post Annealing ◽  
Average Optical Transmittance ◽  
Different Temperatures ◽  
Quartz Substrates ◽  
Post Annealing Temperature ◽  
Deposited Films ◽  
Lower Resistivity

ABSTRACTIn this paper, titanium doped (2 wt. %) indium oxide (TIO) thin films deposited on quartz substrates by DC sputtering were presented. Dealt with different temperatures from 420°C to 620°C of post-annealing in vacuum for 40 minuets, the samples display different optical and electric properties. The deposited films exhibited polycrystalline in the preferred (222) and (440) orientation, with higher mobility (up to 48.6 cm2/VS) and lower resistivity (1.26 ×10-4Ω·cm) at the post-annealing temperature of 520°C. The average optical transmittance of the films is over 92% in a wavelength range from 300 to 1100 nm and the transmittance has only around 1.8% change with different post-annealing temperatures.

scholarly journals Ferroelectric and Magnetic Properties of Hot-Pressed BiFeO3-PVDF Composite Films

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Annapu V. Reddy ◽  
K. C. Sekhar ◽  
Navneet Dabra ◽  
A. Nautiyal ◽  
Jasbir S. Hundal ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Coercive Field ◽  
Polyvinylidene Fluoride ◽  
Room Temperature ◽  
Magnetic Hysteresis ◽  
Composite Films ◽  
Hysteresis Loops ◽  
Liquid Phase Sintering ◽  
Magnetic Hysteresis Loops ◽  
Ferroelectric Hysteresis

The ferroelectric and magnetic properties of hot-pressed BiFeO3- (BFO) polyvinylidene fluoride (PVDF) composite films have been studied. The BiFeO3 (BFO) ceramics have been synthesized by a rapid liquid phase sintering technique. The X-ray diffraction (XRD) studies revealed that the impure phase observed in pure BFO ceramics was significantly reduced in the composite films. The presence of both ferroelectric and magnetic hysteresis loops confirms the multiferroic nature of the composite films at room temperature. A well-saturated ferroelectric hysteresis loop with a remanent polarization (Pr)∼4.8 μC-cm-2 and coercive field (Ec)∼1.55 kV/cm has been observed in composite thin films at room temperature. The magnetic hysteresis loops were traced at room temperature with SQUID. The remanent magnetization (Mr)∼3.0×10−3 emu/gm and coercive field (Hc)∼0.99 kOe was observed in the composite film. The magnetic polarization of the composite films has found to be enhanced as compared to pure BFO and correlated to reduction in BFO impure peak intensity.

scholarly journals Copper-Iron Oxide: A Highly Effective Photocatalyst Than TiO2 Prepared by One-Step Sparking Process

2021 ◽  
Author(s):  
Arisara Panthawan ◽  
Nidchamon Jumrus ◽  
Panupong Sanmuangmoon ◽  
Winai Thongpan ◽  
Tewasin Kumpika ◽  
...  
Keyword(s):  
Photocatalytic Activity ◽  
Iron Oxide ◽  
Annealing Temperature ◽  
Quartz Substrate ◽  
Composite Films ◽  
Energy Band Gap ◽  
Optimum Ratio ◽  
Different Temperatures ◽  
One Step ◽  
Photocatalytic Applications

Abstract Copper-iron (Cu-Fe) oxide composite films were successfully deposited on quartz substrate by a facile sparking process. The nanoparticles were deposited on the substrate after sparking off the Fe and Cu tips with different ratios and were then annealed at different temperatures. The network particles was observed after annealed the film at 700°C. Meanwhile, XRD and SAED patterns of the annealed films at 700°C consisted of a mixed phase of CuO, γ-Fe2O3, CuFe2O4 and CuFe2O. The film with a lowest energy band gap (Eg) of 2.56 eV was observed after anneal at 700°C. Interestingly, the optimum ratio and annealing temperature show highly photocatalytic activity than annealed TiO2 at 500 and 700°C. This is a novel photocatalyst which can be replace TiO2 for photocatalytic applications in the future.

Ferromagnetism in N-Doped In2O3 Films Prepared by Thermal Oxidation

2013 ◽  
Vol 763 ◽  
pp. 102-106
Author(s):  
Peng Fei Xing ◽  
Shao Hua Sun
Keyword(s):  
Magnetic Properties ◽  
Thermal Oxidation ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Ferromagnetic Coupling ◽  
Annealing Conditions ◽  
Different Temperatures ◽  
N Doping ◽  
Structural And Magnetic Properties ◽  
Oxygen Atoms

Two series of N-doped In2O3 films were prepared by annealing the sputtered InN films in air at different temperatures and for different time. The corresponding structural and magnetic properties are studied. An apparent transformation from the wurtzite InN to the cubic bixbyite In2O3 is observed with increasing the annealing temperature. Room temperature d0 ferromagnetism is detected, which is found to be closely related with the annealing conditions. We think that the ferromagnetism is derived from the N-doping which substitute the positions of the oxygen atoms in the In2O3 lattice, and an indirect ferromagnetic coupling can be established between the doped N atoms via the hybridized O 2p and In 5p/4d orbitals.

Effects of the Substrate Temperature, Annealing Temperature, and Hydrogen Presence During Sputtering on the Luminescence of Eu-Doped Nanocrystalline Si/SiO2

2000 ◽  
Vol 638 ◽  
Author(s):  
G. A. Nery ◽  
L. F. Fonseca ◽  
H. Liu ◽  
O. Resto ◽  
S. Z. Weisz
Keyword(s):  
Substrate Temperature ◽  
Annealing Temperature ◽  
Green Line ◽  
Different Temperatures ◽  
Blue Line ◽  
Quartz Substrates ◽  
Nanocrystalline Si

AbstractWe synthesized RF co-sputtered Eu2O3, Si and SiO2 on quartz substrates at different temperatures, and with and without the presence of H2 gas during sputtering. The photoluminescence of the samples was measured using both the 514.5nm green line and 457.9nm blue line of an Ar laser. The samples were then annealed, their luminescence remeasured, and the process repeated for a range of temperatures from 470°C to 1084°C. The effects of substrate temperature, presence or absence of H2, annealing, and the use of the green or blue line on the observed luminescence are presented.

scholarly journals Effect of the annealing temperature on the structural properties of hafnium nanofilms by magnetron sputtering

2021 ◽  
Vol 2064 (1) ◽  
pp. 012071
Author(s):  
Thant Sin Win ◽  
A P Kuzmenko ◽  
V V Rodionov ◽  
Min Myo Than
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Hafnium Dioxide ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Lattice Strains ◽  
Atomic Force ◽  
Different Temperatures

Abstract In this work investigated the effect of the annealing temperature on hafnium nanofilms obtained by DC magnetron sputtering on Si substrates. The nanofilms annealed through 100°C to 700°C by a High-Temperature Strip Heater Chambers (HTK-16N) on an X-ray Diffractometer (XRD). The microstructure and morphology of the films at different temperatures were investigated by XRD, Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and Raman Microspectrometer (RS). It was found that annealing affects changes in the lattice strains, texture, grain size, and roughness of Hf nanofilms. According to XRD data, the structure of the thin films showed amorphous from room temperature to 100°C and starting from a temperature of 200°C were changed crystallization. At 500°C a monoclinic structure corresponding to hafnium dioxide HfO2was formed in hafnium nanofilms.

The Effect of Formation Conditions on the Structural and Electrical Properties of Ultrathin Cobalt Silicide Films

1987 ◽  
Vol 102 ◽  
Author(s):  
Julia M. Phillips ◽  
J. L. Batstone ◽  
J. C. Hensel ◽  
M. Cerullo ◽  
F. C. Unterwald
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Ion Beam ◽  
Residual Resistivity ◽  
Cobalt Silicide ◽  
Plan View ◽  
Structural And Electrical Properties ◽  
Different Temperatures ◽  
Formation Conditions

ABSTRACTWe have studied the dependence of the structural and electrical properties of ultrathin cobalt silicide films on the annealing temperature and deposited Co thickness.We recently reported that coherent, electrically continuous films of CoSi2 could be grown on Si(111) with thicknesses as small as 1 nm.1 The thinnest of these films had a high density of pinholes which covered about 20% of the area of the substrate. The resistivity of the films increased dramatically with decreasing thickness in a manner which was qualitatively consistent with quantum size effects. In order to investigate the dependence of both the pinhole density and the resistivity of ultrathin CoSi2 films on Si(111), we have deposited different thicknesses of Co onto near room temperature (<100°C) Si(111) substrates and have annealed the samples at different temperatures in order to study the effect of silicide formation conditions on the structural and electrical properties of the resulting films.Co layers were deposited onto Si(111) wafers in a molecular beam epitaxy apparatus as described previously.1 In our earlier work, CoSi2 was formed by heating the sample to ∼600°C for a few seconds after Co deposition. Because higher temperature anneals are known to lead to pinhole formation in thicker films,2 annealing temperatures in the present experiments were constrained to be 600° or less. The reaction time was on the order of 5 minutes. The layers were examined using plan-view transmission electron microscopy (TEM) in order to avoid beam heating and ion beam mixing effects which might cause artefacts in cross-section TEM observation.The results of our experiments are summarized in Figure 1. The figure indicates the silicide phases found in a film as a function of deposited Co thickness and annealing temperature. The numbers in each square correspond to the residual resistivity, ρo, measured for each film. Perhaps the most striking finding of this study is the abrupt change in the structure of the films between 0.7 and 1.4 nm of deposited Co. For all temperatures investigated (including near room temperature), films formed by depositing less than 1 nm of Co form CoSi2 immediately upon deposition. (For films approaching this thickness, there is also a small amount of Co2Si which persists at all temperatures

scholarly journals The Thermal Behavior of γ-PA1010: Evolution of Structure and Morphology in the Simultaneous Thermal Stretched Films

Materials ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1722 ◽  
Author(s):  
Zhenya Zhang ◽  
Wentao Liu ◽  
Hao Liu ◽  
Aihua Sun ◽  
Yeonwoo Yoo ◽  
...  
Keyword(s):  
Draw Ratio ◽  
Room Temperature ◽  
Tensile Force ◽  
X Ray ◽  
Maximum Value ◽  
Degree Of Orientation ◽  
Higher Temperature ◽  
Evolution Of Structure ◽  
The Difference ◽  
Polyamide 1010

In this work, polyamide 1010 (PA1010) films were prepared by melt-quenching. A wide-angle X-ray diffractometer (WAXD) with a thermal stretching stage was used to investigate the structure transformation, crystallinity and degree of orientation in the course of simultaneous thermally stretched PA1010. The crystallinity increased along with the increase of draw ratio and then decreased as the draw ratio was over 2.00 times—which the maximum value reached when the draw ratio was about 2.00 times. The degree of orientation of γ-PA1010 was much greater at higher temperature than room temperature (RT); the difference gradually became weaker with the increase of draw ratio. There was a linear relationship between the draw ratios and tensile force at higher temperatures, and the tensile force increased with the increase of draw ratios. The tensile force may induce crystallization and promote orientation in the course of simultaneous thermally stretched PA1010. These phenomena are beneficial to understand the structure-processing-performance relationship and provide some theoretical basis for the processing and production.

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