IMPACTS OF ANNEAL TEMPERATURE ON THE STRUCTURAL, MAGNETIC AND OPTICAL PROPERTIES OF THE Fe:LaSrFeO4 COMPOSITE FILM

2016 ◽  
Vol 23 (06) ◽  
pp. 1650060
Author(s):  
J. SHI ◽  
Y. L. JIA ◽  
X. H. LI ◽  
X. H. DAI ◽  
J. X. GUO ◽  
...  
Keyword(s):  
Room Temperature ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Composite Films ◽  
Annealed Sample ◽  
Absorption Properties ◽  
Oxygen Loss ◽  
Quartz Substrates ◽  
Anneal Temperature ◽  
Intrinsic Strain

We prepared the pulsed laser deposited Fe:LaSrFeO4 (LSFO) composite films on quartz substrates by decomposing the La[Formula: see text]Sr[Formula: see text]FeO3 target at room temperature in a high vacuum. Impacts of anneal temperature on the structural and physical properties have been investigated, and the systematic changes were found in structural, magnetic and optical absorption properties upon annealing. The LSFO (110) spacing decreases with the increase of annealing temperature, which can be attributed to the release of intrinsic strain; and there is an increase in spacing for the 750[Formula: see text]C annealed sample, which is ascribed to the oxygen loss in LSFO films.

FERROMAGNETISM IN SEMICONDUCTOR C–Ni FILMS AT DIFFERENT ANNEALING TEMPERATURE

2016 ◽  
Vol 23 (03) ◽  
pp. 1650002 ◽  
Author(s):  
VALI DALOUJI ◽  
SMOHAMMAD ELAHI
Keyword(s):  
Coercive Field ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Composite Films ◽  
Nickel Concentration ◽  
Maximum Value ◽  
Different Temperatures ◽  
The Difference ◽  
Quartz Substrates ◽  
Microstructure And Magnetic Properties

In this work, the microstructure and magnetic properties of carbon–nickel (C–Ni) composite films annealed at different temperatures (300–1000[Formula: see text]C) were investigated. The films were grown by radio frequency magnetron sputtering on quartz substrates at room temperature. The nickel concentration in the films are affected by changing of the value of evaporation nickel atoms and measured by Rutherford backscattering spectroscopy (RBS). Values of coercive field were measured under both increasing and decreasing applied magnetic field. It is shown that the coercive field of films strongly dependent on the annealing temperature and at 500[Formula: see text]C films has maximum value of 93.67[Formula: see text]Oe. The difference in the coercive fields increased for films annealed from 300 to 500[Formula: see text]C and then decreased from 500 to 1000[Formula: see text]C. The ID/IG ratio of Raman spectra would indicate the presence of higher sp2 bonded carbon in the films annealed at 800[Formula: see text]C.

scholarly journals Temperature Dependence of Hall Mobility AndCarrier Concentration of pb0.55S0.45 Films

2009 ◽  
Vol 6 (1) ◽  
pp. 129-134
Author(s):  
Baghdad Science Journal
Keyword(s):  
Hall Mobility ◽  
Room Temperature ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Life Time ◽  
Mean Free Path ◽  
Charge Carriers ◽  
Evaporation Technique ◽  
Carrier Life Time ◽  
Type Conduction

Measurements of Hall effect properties at different of annealing temperature have been made on polycrystalline Pb0.55S0.45 films were prepared at room temperature by thermal evaporation technique under high vacuum 4*10-5 torr . The thickness of the film was 2?m .The carrier concentration (n) was observed to decrease with increasing the annealing temperature. The Hall measurements showed that the charge carriers are electrons (i.e n-type conduction). From the observed dependence on the temperature, it is found that the Hall mobility (µH), drift velocity ( d) carrier life time ( ), mean free path (?) were increased with increasing annealing temperature

STRUCTURAL AND OPTICAL CHARACTERIZATION OF ZnO SINGLE CRYSTALLINE NANOBAMBOOS

2005 ◽  
Vol 19 (15n17) ◽  
pp. 2804-2810 ◽  
Author(s):  
LEI MIAO ◽  
SAKAE TANEMURA ◽  
YASUHIKO HAYASHI ◽  
MASAKI TANEMURA ◽  
RONGPING WANG ◽  
...  
Keyword(s):  
Room Temperature ◽  
Annealing Temperature ◽  
Optical Characterization ◽  
Growth Direction ◽  
Annealed Sample ◽  
Green Band ◽  
Post Annealing ◽  
High Resolution Tem ◽  
Post Annealing Temperature

ZnO nanobamboos and nanowires with diameters of 10–30 nm and lengths of 2–4 μm have been prepared by laser ablation in vacuum with precisely controlled pressure, growth and post-annealing temperature. XRD results show the annealed sample is hexagonal ZnO . Low-magnified TEM observation reveals the annealed sample includes ZnO nanobamboos and nanowires. High resolution TEM image and electron diffraction pattern confirm that the structure of ZnO nanobamboo is regular stacking of Zn and O layers with high crystal quality. The growth direction is determined as along [001] direction (c axis). TEM observations confirm that the formation of bamboo-shape ZnO is due to the stacking fault and cleavage. The bundle of those stacking faults seems to be the origin of the black contrast at the nodes. The uniformity of chemical composition for the nanobamboos is identified by EDS profiles. A strong-narrow UV band centred at 390 nm and a weak-broad green band centred at 515 nm are observed at room temperature in the PL spectrum recorded from the annealed ZnO nanobamboos and nanowires.

Structural and Optical Properties of the Thermally Stable Amorphous Si1−xBx Alloy.

1993 ◽  
Vol 297 ◽  
Author(s):  
Johan R. A. Carlsson ◽  
X.H. Li ◽  
S.F. Gong ◽  
H.T.G. Hentzell
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Vacuum System ◽  
Structural And Optical Properties ◽  
Microstructural Alterations ◽  
Amorphous Si ◽  
Means Of Transmission ◽  
Quartz Substrates

Thin amorphous Si1−xBx films were co-evaporated onto pre-oxidized (100) Si wafers and quartz substrates, by using a high vacuum system with 2 electron guns. Films were deposited in a composition range from x=0 to x=0.5. In order to study how the structural and optical properties depended on concentration and annealing temperature, heat treatments were carried out at temperatures from 400 up to 1000°C. The films were characterized by means of transmission electron microscopy (TEM), Auger electron spectroscopy (AES), and light absorption spectrophotometry. It is shown that the amorphous Si1−xBx alloy is stable up to 1000°C at certain compositions and that the optical band gap of the alloy increases gradually with increasing annealing temperature up to 700 - 900°C, and then increases rapidly when annealed at a higher temperature by about 0.5 eV. These changes can be associated with microstructural alterations. The relationship between the microstructure and the band gap of the films is discussed.

The Effect of Annealing on the Cu Distribution and AI2Cu Precipitation in Ai(Cu) Thin Films

1993 ◽  
Vol 309 ◽  
Author(s):  
E.G. Colgan ◽  
K.P. Rodbell ◽  
D.R. Vigliotti
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Grain Boundaries ◽  
Low Temperatures ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Precipitate Morphology ◽  
Electromigration Lifetime ◽  
Bamboo Structure ◽  
Anneal Temperature

AbstractThe Cu distribution in AI(Cu) thin films has been examined in blanket and patterned samples as a function of annealing. The Cu concentration in the Al grains, measured at room temperature, closely follows the solubility at the anneal temperature when a high cooling rate is used (-100 or -200°C/min) from the annealing temperature. With fine lines, the room temperature Cu concentration follows the solubility at the anneal temperature only at low anneal temperatures, ≤350°C. With higher temperatureannealing, >400°C, the room temperature Cu concentration in the Al grains was substantially less than the solubility at the anneal temperature. These differences are attributed to the smaller grain size in fine lines, which reduces the distance to grain boundaries. With blanket films, the Θ-phase (Al2Cu) precipitate morphology depends on the Al grain size and annealing temperature. With small Al grains (100-300 nm), the Θ particles are small (100-200 nm) and round whereas with large Al grains (0.5-2μm), the precipitates are long and irregularly shaped. The morphology of the Θ precipitates is constrained by the Al grain size. With fine lines, having a bamboo structure, the Θ precipitates are “wedge” shaped along grain boundaries or span the width of the line. The electromigration lifetime was found to depend strongly on the heat treatment used, an increase of 3X in lifetime was obtained for samples rapidly cooled from a temperature above the solvus curve as compared with samples subjected to additional aging at low temperatures. This is believed to be dueto the different concentrations of Cu in solution and to the size and distribution of Θparticles in the patterned lines.

Effects of Selenization Conditions on the Properties of Cu-In-Ga-Se Thin Films Prepared by Pulsed Laser Deposition

2015 ◽  
Vol 1102 ◽  
pp. 83-86 ◽  
Author(s):  
Lei Tang ◽  
Shui Yuan Chen ◽  
Hui Qin Zhang ◽  
Zhi Gao Huang
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Annealing Temperature ◽  
Synthesis Method ◽  
Pulsed Laser ◽  
Metal Films ◽  
Laser Deposition ◽  
Absorption Properties ◽  
Alternative Synthesis ◽  
Quartz Substrates

In this paper, Pulsed laser deposition (PLD) is attempted to be an alternative synthesis method for Cu-Ga-In (CIGS) thin films. Cu-In-Ga prefabricated metal films were grown on the quartz substrates by PLD method. Then the CIGS films with different Se content were synthesized by the post-selenization(Se)-annealing processes. The structure, element component proportion and optical properties of the CIGS films were investigated. The experimental results indicate that the CIGS films can be well obtained by the PLD method with Se-annealing. The performances of the CIGS films are much affect by the Se-annealing processes, including Se-annealing temperature, annealing time, and the way of Se-annealing. The CIGS films prepared by PLD method with Se-annealing present fine visible light absorption properties.

scholarly journals Формирование нанокристаллов германия в пленках GeO[SiO-=SUB=-2-=/SUB=-] и GeO[SiO]

2021 ◽  
Vol 55 (6) ◽  
pp. 507
Author(s):  
Zhang Fan ◽  
С.Г. Черкова ◽  
В.А. Володин
Keyword(s):  
Raman Spectroscopy ◽  
Fourier Transform ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Spectroscopy Technique ◽  
Spectroscopy Analysis ◽  
Si Nanocrystals ◽  
Fused Quartz ◽  
Germanium Nanocrystals ◽  
Quartz Substrates

Films of nonstoichiometric germanosilicate glasses GeO0.5[SiO2]0.5 and GeO0.5[SiO]0.5 were obtained by co-evaporation of GeO2 and SiO2 or GeO2 and SiO powders, respectively, and by deposition on cold Si (100) and fused quartz substrates in a high vacuum. Then the films were annealed at temperatures up to 900 oC. The presence and phase composition of germanium nanoclusters in the films was investigated using Raman spectroscopy technique. The transformation after annealing of the GeSixOy matrix surrounding the nanoclusters was investigated using Fourier transform infrared spectroscopy. Analysis of the Raman spectra showed that annealing at a temperature of 800 oC led to the formation of germanium nanocrystals (NC-Ge), but the content of the amorphous germanium phase remains up to half of the volume. Annealing at a temperature of 900 oC led to almost complete crystallization of amorphous nanoclusters in all films. The sizes of the NC-Ge depended on the annealing temperature, the composition of the films, and on the substrate; in this case, the formation of Ge-Si nanocrystals was not observed.

(111) Monocrystalline Nickel Films

1972 ◽  
Vol 30 ◽  
pp. 512-513
Author(s):  
T.E. Pratt ◽  
R.W. Vook
Keyword(s):  
Film Thickness ◽  
Deposition Rate ◽  
Room Temperature ◽  
Narrow Range ◽  
High Vacuum ◽  
Residual Pressure ◽  
Temperature Dependent ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Substrate Temperatures

(111) oriented thin monocrystalline Ni films have been prepared by vacuum evaporation and examined by transmission electron microscopy and electron diffraction. In high vacuum, at room temperature, a layer of NaCl was first evaporated onto a freshly air-cleaved muscovite substrate clamped to a copper block with attached heater and thermocouple. Then, at various substrate temperatures, with other parameters held within a narrow range, Ni was evaporated from a tungsten filament. It had been shown previously that similar procedures would yield monocrystalline films of CU, Ag, and Au.For the films examined with respect to temperature dependent effects, typical deposition parameters were: Ni film thickness, 500-800 A; Ni deposition rate, 10 A/sec.; residual pressure, 10-6 torr; NaCl film thickness, 250 A; and NaCl deposition rate, 10 A/sec. Some additional evaporations involved higher deposition rates and lower film thicknesses.Monocrystalline films were obtained with substrate temperatures above 500° C. Below 450° C, the films were polycrystalline with a strong (111) preferred orientation.

Investigation of ultra-thin films of YBa2Cu3O7−δ grown on MgO

1990 ◽  
Vol 48 (4) ◽  
pp. 6-7
Author(s):  
S.K. Streiffer ◽  
C.B. Eom ◽  
J.C. Bravman ◽  
T.H. Geballet
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Process ◽  
Nucleation And Growth ◽  
Multilayer Structures ◽  
Rf Power ◽  
Oxygen Loss ◽  
Transmission Electron ◽  
Single Target ◽  
Mtorr Argon

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

TEM sample preparation of wear-tested room-temperature pulsed-laser-deposited thin films of MoS2 by ultramicrotomy

1993 ◽  
Vol 51 ◽  
pp. 1118-1119
Author(s):  
Pamela F. Lloyd ◽  
Scott D. Walck
Keyword(s):  
Thin Films ◽  
Sample Preparation ◽  
Room Temperature ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Ultra High Vacuum ◽  
Wear Testing ◽  
Preparation Technique ◽  
Cross Sectional ◽  
Aerospace Applications

Pulsed laser deposition (PLD) is a novel technique for the deposition of tribological thin films. MoS2 is the archetypical solid lubricant material for aerospace applications. It provides a low coefficient of friction from cryogenic temperatures to about 350°C and can be used in ultra high vacuum environments. The TEM is ideally suited for studying the microstructural and tribo-chemical changes that occur during wear. The normal cross sectional TEM sample preparation method does not work well because the material’s lubricity causes the sandwich to separate. Walck et al. deposited MoS2 through a mesh mask which gave suitable results for as-deposited films, but the discontinuous nature of the film is unsuitable for wear-testing. To investigate wear-tested, room temperature (RT) PLD MoS2 films, the sample preparation technique of Heuer and Howitt was adapted.Two 300 run thick films were deposited on single crystal NaCl substrates. One was wear-tested on a ball-on-disk tribometer using a 30 gm load at 150 rpm for one minute, and subsequently coated with a heavy layer of evaporated gold.

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