SIZE AND SHAPE MANIPULATION OF SILVER AND INDIUM SMALL PARTICLES BY ELECTRON-BEAM IRRADIATION

1996 ◽  
Vol 03 (01) ◽  
pp. 1113-1119 ◽  
Author(s):  
A. HEILMANN ◽  
A.-D. MÜLLER ◽  
J. WERNER
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Local Heating ◽  
Electron Source ◽  
Thin Polymer Film ◽  
Silver Particles ◽  
Beam Irradiation ◽  
Small Particles ◽  
Size And Shape ◽  
Electron Microscopes

Small particles of indium or silver were encapsulated in a thin polymer film matrix by simultaneous plasma polymerization and metal evaporation. Electron-beam irradiation inside transmission electron microscopes and with a microfocus electron source was used to induce changes of the encapsulated particle size and shape. At encapsulated indium particles, substantial microstructural changes were observed during the electron-beam irradiation in the electron microscope. Selected area diffraction demonstrates that indium oxide was formed during the electron irradiation. Additional in situ annealing demonstrates that the indium melting point was not reached during electron-beam-induced local heating of the indium particles. At electron-beam irradiation of plasma polymer films with encapsulated silver particles by using a microfocus electron source, the coalescence of the silver particles can be limited to the irradiated areas of the films.

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

Studies of the Effects of Ion-Implantation and Electron Beam Irradiation on CuInSe2 Single Crystals

1992 ◽  
Vol 262 ◽  
Author(s):  
C. A. Mullan ◽  
C. J. Kiely ◽  
A. Rockett ◽  
M. Imanieh ◽  
M. V. Yakushev ◽  
...  
Keyword(s):  
Electron Beam ◽  
Single Crystals ◽  
Electron Beam Irradiation ◽  
High Dose ◽  
Beam Irradiation ◽  
Thin Foils ◽  
Microstructural Effects ◽  
Vertical Bridgman ◽  
Electron Microscopes ◽  
P Type

ABSTRACTA series of CuInSe2 single crystals which were grown by the vertical Bridgman technique have been implanted with oxygen and xenon ions. These implants tend to cause a change from n to p-type conductivity and an enhancement of the photoconductivity. We present HREM and SIMS characterisation of the microstructural effects caused by high dose ion implants on CuInSe2. We also correlate our data with calculated ion implant profiles. In addition, we show that CuInSe2 thin foils can undergo significant degradation under the electron beam irradiation conditions which are commonly encountered in electron microscopes.

Size and shape of Au nanoparticles formed in ionic liquids by electron beam irradiation

2011 ◽  
Vol 13 (33) ◽  
pp. 14823 ◽  
Author(s):  
Akihito Imanishi ◽  
Shinobu Gonsui ◽  
Tetsuya Tsuda ◽  
Susumu Kuwabata ◽  
Ken-ichi Fukui
Keyword(s):  
Electron Beam ◽  
Ionic Liquids ◽  
Electron Beam Irradiation ◽  
Au Nanoparticles ◽  
Beam Irradiation ◽  
Size And Shape

Synthesis of nanosized silver particles in ion-exchanged glass by electron beam irradiation

1997 ◽  
Vol 70 (13) ◽  
pp. 1694-1696 ◽  
Author(s):  
H. Hofmeister ◽  
S. Thiel ◽  
M. Dubiel ◽  
E. Schurig
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Silver Particles ◽  
Beam Irradiation

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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