Development of the charging reduction system by electron beam irradiation for scanning electron microscopes

2009 ◽  
pp. 567-568
Author(s):  
Y. Kono ◽  
O. Suzuki ◽  
K. Honda
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Reduction System ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

scholarly journals Electron Beam Irradiation Induced Multiwalled Carbon Nanotubes Fusion inside SEM

Scanning ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-8 ◽  
Author(s):  
Daming Shen ◽  
Donglei Chen ◽  
Zhan Yang ◽  
Huicong Liu ◽  
Tao Chen ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electron Beam ◽  
Electron Microscope ◽  
Multiwalled Carbon Nanotubes ◽  
Electron Beam Irradiation ◽  
Tensile Force ◽  
Beam Irradiation ◽  
Multiwalled Carbon ◽  
Near Future ◽  
Scanning Electron

This paper reported a method of multiwalled carbon nanotubes (MWCNTs) fusion inside a scanning electron microscope (SEM). A CNT was picked up by nanorobotics manipulator system which was constructed in SEM with 21 DOFs and 1 nm resolution. The CNT was picked up and placed on two manipulators. The tensile force was 140 nN when the CNT was pulled into two parts. Then, two parts of the CNT were connected to each other by two manipulators. The adhered force between two parts was measured to be about 20 nN. When the two parts of CNT were connected again, the contact area was fused by focused electron beam irradiation for 3 minutes. The tensile force of the junction was measured to be about 100 nN. However, after fusion, the tensile force was five times larger than the tensile force connected only by van der Waals force. This force was 70 percent of the tensile force before pulling out of CNTs. The results revealed that the electron beam irradiation was a promising method for CNT fusion. We hope this technology will be applied to nanoelectronics in the near future.

Nanoscale controlled Li-insertion reaction induced by scanning electron-beam irradiation in a Li4Ti5O12 electrode material for lithium-ion batteries

2017 ◽  
Vol 19 (18) ◽  
pp. 11581-11587 ◽  
Author(s):  
Mitsunori Kitta ◽  
Masanori Kohyama
Keyword(s):  
Electron Beam ◽  
Scanning Transmission Electron Microscopy ◽  
Electron Beam Irradiation ◽  
Lithium Ion ◽  
Insertion Reaction ◽  
Beam Irradiation ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
New Type ◽  
Scanning Electron

Electron beam of scanning transmission electron microscopy can induce nanoscale-controlled Li-insertion in Li4Ti5O12 electrode, which is significant as a new type of electron beam-assisted chemical reactions for local structural and property modifications.

SIZE AND SHAPE MANIPULATION OF SILVER AND INDIUM SMALL PARTICLES BY ELECTRON-BEAM IRRADIATION

1996 ◽  
Vol 03 (01) ◽  
pp. 1113-1119 ◽  
Author(s):  
A. HEILMANN ◽  
A.-D. MÜLLER ◽  
J. WERNER
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Local Heating ◽  
Electron Source ◽  
Thin Polymer Film ◽  
Silver Particles ◽  
Beam Irradiation ◽  
Small Particles ◽  
Size And Shape ◽  
Electron Microscopes

Small particles of indium or silver were encapsulated in a thin polymer film matrix by simultaneous plasma polymerization and metal evaporation. Electron-beam irradiation inside transmission electron microscopes and with a microfocus electron source was used to induce changes of the encapsulated particle size and shape. At encapsulated indium particles, substantial microstructural changes were observed during the electron-beam irradiation in the electron microscope. Selected area diffraction demonstrates that indium oxide was formed during the electron irradiation. Additional in situ annealing demonstrates that the indium melting point was not reached during electron-beam-induced local heating of the indium particles. At electron-beam irradiation of plasma polymer films with encapsulated silver particles by using a microfocus electron source, the coalescence of the silver particles can be limited to the irradiated areas of the films.

Studies of the Effects of Ion-Implantation and Electron Beam Irradiation on CuInSe2 Single Crystals

1992 ◽  
Vol 262 ◽  
Author(s):  
C. A. Mullan ◽  
C. J. Kiely ◽  
A. Rockett ◽  
M. Imanieh ◽  
M. V. Yakushev ◽  
...  
Keyword(s):  
Electron Beam ◽  
Single Crystals ◽  
Electron Beam Irradiation ◽  
High Dose ◽  
Beam Irradiation ◽  
Thin Foils ◽  
Microstructural Effects ◽  
Vertical Bridgman ◽  
Electron Microscopes ◽  
P Type

ABSTRACTA series of CuInSe2 single crystals which were grown by the vertical Bridgman technique have been implanted with oxygen and xenon ions. These implants tend to cause a change from n to p-type conductivity and an enhancement of the photoconductivity. We present HREM and SIMS characterisation of the microstructural effects caused by high dose ion implants on CuInSe2. We also correlate our data with calculated ion implant profiles. In addition, we show that CuInSe2 thin foils can undergo significant degradation under the electron beam irradiation conditions which are commonly encountered in electron microscopes.

Disptacement of Arsenic from Substitutional Sites in Silicon by MEV HE+ Irradiation

1985 ◽  
Vol 45 ◽  
Author(s):  
E A Maydell-Ondrusz ◽  
I H Wilson ◽  
K G Stephens
Keyword(s):  
Electron Beam ◽  
Single Crystals ◽  
Cross Section ◽  
Cross Sections ◽  
Electron Beam Irradiation ◽  
Arsenic Concentration ◽  
Beam Irradiation ◽  
Mbe Growth ◽  
Silicon Doped ◽  
Scanning Electron

ABSTRACTCross-sections were determined for displacement of arsenic from substitutional sites in silicon by 1.5MeV He+ ions. Results are presented for channelled and random incidence on (111) and (100) silicon, doped by arsenic implantation and annealed by scanning electron beam irradiation. Layers doped during MBE growth were also studied for comparison.Inner L-shell ionisation of host atoms is proposed to explain the observed displacement cross-section and its variation with arsenic concentration. The results are used to indicate the limits for using Rutherford backscattering and channelling techniques to measure the substitutionality of dopants in single crystals.

In Situ TEM Manipulation and Property Study of Cd2Ge2O3 Nanowires

2015 ◽  
Vol 1088 ◽  
pp. 48-51
Author(s):  
Qian Liu ◽  
Jun Qing Hu
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Hydrothermal Route ◽  
Structure And Morphology ◽  
Facile Hydrothermal Route ◽  
Long Time ◽  
Source Materials ◽  
Scanning Electron

Cd2Ge2O6 nanowires have been synthesized via a simple and facile hydrothermal route using GeO2 and CdO as the source materials with the surfactant. The structure and morphology of the Cd2Ge2O6 nanowires were fully analyzed by field emission scanning electron microscope (FESEM) and HRTEM. With a focused electron beam irradiation, the Cd2Ge2O6 nanowire became unstable and tended to heavily destroyed under a long time irradiation. Using the TEM-STM holder, electrical properties of an individual Cd2Ge2O6 nanowire has been measured and the obtained I-V curve demonstrated the semiconductor property.

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