INFLUENCE OF INHOMOGENEITY OF A MULTILAYER STRUCTURE ON REDISTRIBUTION OF INFUSED DOPANT DURING PRODUCTION — A BIPOLAR TRANSISTOR

2010 ◽  
Vol 09 (03) ◽  
pp. 159-168
Author(s):  
E. L. PANKRATOV
Keyword(s):  
Annealing Time ◽  
Multilayer Structure ◽  
Bipolar Transistors ◽  
Impurity Distribution ◽  
Bipolar Transistor

It has been recently shown, that inhomogeneity of a multilayer structure leads to increasing of sharpness of diffusion-junction rectifier (see, for example, Refs. 1–3), which was formed in the multilayer structure. It has also been shown, that together with increasing sharpness the homogeneity of impurity distribution in doped area increases. In this paper both the effects (increasing of the sharpness of diffusion-junction rectifier and increasing the homogeneity of impurity distribution) have been used for production of a system of p-n-junctions (a bipolar transistors). Annealing time has been optimized for simultaneously increasing the sharpness and the homogeneity.

DECREASING OF SPATIAL DIMENSION OF A SERIAL OF DIFFUSED-JUNCTION RECTIFIERS IN A MULTILAYER STRUCTURE IN ACCOUNT WITH NONLINEAR EFFECTS: OPTIMIZATION OF ANNEALING TIME

2009 ◽  
Vol 23 (22) ◽  
pp. 4637-4653
Author(s):  
E. L. PANKRATOV
Keyword(s):  
Annealing Time ◽  
Multilayer Structure ◽  
Nonlinear Effects ◽  
Spatial Dimension ◽  
Bipolar Transistors ◽  
Impurity Distribution ◽  
Junction Rectifiers

It has been recently shown, that inhomogeneity of a multilayer structure (MS) leads to increase in sharpness of diffused-junction rectifier (see, for example, Refs. 1 and 2), which were formed in the MS. It has been also shown, that together with increasing of the sharpness homogeneity of impurity distribution in doped area increases. In this paper, both the effects (together increasing of sharpness of p–n-junction and increasing of homogeneity of impurity distribution) have been used for production of a system of a serial p–n-junctions (such as bipolar transistors). Annealing time has been optimized for increasing simultaneously the sharpness and the homogeneity.

LOCAL DOPING AND OPTIMAL ANNEALING OF A MESH MULTILAYER STRUCTURE TO DECREASE THE SPATIAL DIMENSIONS OF INTEGRATED p–n-JUNCTIONS

NANO ◽  
2009 ◽  
Vol 04 (05) ◽  
pp. 303-323 ◽  
Author(s):  
E. L. PANKRATOV
Keyword(s):  
Integrated Circuits ◽  
Annealing Time ◽  
Multilayer Structure ◽  
Paper Analysis ◽  
Bipolar Transistor ◽  
Multilayer Structures ◽  
Dopant Distribution ◽  
Spatial Dimensions ◽  
Dopant Redistribution ◽  
Junction Rectifiers

It has been recently shown that inhomogeneity of a multilayer structure and optimization of annealing time give us the possibility to decrease the depth of p–n-junctions, which were produced in the structures. The additional to the considered effect is increasing of homogeneity of dopant distribution in enriched by the dopant area of p–n-junction. In the present paper analysis of dopant redistribution in a multilayer structures during production a series of p–n-junctions, which was produced in the multilayer structures, has been done. We consider an approach to increase the sharpness of both diffused-junction and implanted-junction rectifiers, which comprise in a bipolar transistor or thyristor, and increasing of homogeneity of dopants distributions in enriched by the dopants areas of p–n-junctions. The approach gives us possibility to increase the degree of integration of p–n-junctions, which was produced as elements of integrated circuits. Optimization of annealing time for simultaneously increasing of the sharpness and homogeneity has been done.

OPTIMIZATION OF DIFFUSION PROCESS FOR PRODUCTION OF SYSTEMS OF DIFFUSED-JUNCTION RECTIFIERS

2010 ◽  
Vol 24 (29) ◽  
pp. 5793-5806
Author(s):  
E. L. PANKRATOV
Keyword(s):  
Diffusion Process ◽  
Annealing Time ◽  
Diffusion Coefficients ◽  
Multilayer Structure ◽  
Bipolar Transistors ◽  
Dopant Distribution ◽  
The Difference ◽  
Junction Rectifiers

It has been recently shown that difference between diffusion coefficients of dopant in layers of a multilayer structure leads to increasing of sharpness of diffusion-junction rectifier (see, for example, E. L. Pankratov, Phys. Rev. B72(7), 075201 (2005); E. L. Pankratov and B. Spagnolo, Eur. Phys. J. B 46(1), 15 (2005).), which was formed in the multilayer structure after appropriate choosing of materials of layers. It has been also shown that the difference between the diffusion coefficients also leads to increasing of homogeneity of dopant distribution in doped area. In this paper, both the effects (together increasing of sharpness of p–n-junction and increasing of homogeneity of dopant distribution) have been used to produce a system of p–n-junctions (such as bipolar transistors). Annealing time has been optimized to increase simultaneously the sharpness and the homogeneity.

Vertical Bipolar Transistors and a Merged 3–D Vertical Bipolar—Mos Device in Recrystallized Polysilicon

1985 ◽  
Vol 53 ◽  
Author(s):  
J.C. Sturm ◽  
J.F. Gibbons
Keyword(s):  
Minority Carrier ◽  
Strong Dependence ◽  
Three Dimensional ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Current Gain ◽  
Collector Current ◽  
Beam Laser ◽  
P Type ◽  
Mos Device

ABSTRACTThe minority carrier properties of shaped—beam laser-recrystallized polysilicon films have been studied, leading to the successful fabrication of vertical bipolar transistors in these films and to the demonstration of a novel three—dimensional mergedvertical bipolar—MOS device. Experiments with lateral transistors established a minority carrier diffusion length of 4 μm in p—type recrystallized films. Vertical bipolar npn transistors with a base—width of 0.2 μm were fabricated in 0.75–μm—thick films using a polysilicon emitter technology. The strong dependence of the gain of the transistors on hydrogen annealing steps is described. With an Ar:H plasma anneal to decrease base—emitter space—charge region recombination, a common—emitter current gain of 100 was possible. The bipolar transistor technology was then used to develop a 3—D fourterminal merged verticalbipolar—MOS device in a recrystallized film. It consists of the three terminals of a bipolar transistor plus a fourth underlying terminal which serves to switch the collector current on or off. A simple model for the device is presented.

scholarly journals UNIFIED BIPOLAR TRANSISTOR SPICE MODEL TAKING INTO ACCOUNT THE INFLUENCE OF DIFFERENT RADIATION TYPES

2020 ◽  
Author(s):  
Konstantin Petrosyants ◽  
Maksim Kozhukhov
Keyword(s):  
Integrated Circuits ◽  
Radiation Effect ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Electrical Characteristics ◽  
Spice Simulation ◽  
Sige Hbt ◽  
Spice Model ◽  
Before And After

The unified Si BT/SiGe HBT SPICE-model is presented, which allows performing SPICE simulation of integrated circuits that considering the radiation effect. The results of measurements and modeling of electrical characteristics of bipolar transistors before and after exposure to various radiation types are presented.

Hot Carrier Degradation of Gain in Bipolar Transistors

1995 ◽  
Vol 391 ◽  
Author(s):  
Isik C. Kizilyalli ◽  
Jeff D. Bude
Keyword(s):  
Impact Ionization ◽  
High Energy ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Current Gain ◽  
Exponential Dependence ◽  
Hot Electron ◽  
Hot Carrier ◽  
Bicmos Technology ◽  
Doping Profiles

AbstractIn this paper hot carrier related aging of n-p-n bipolar transistors is investigated experimentally and theoretically to bring physical insight into the bipolar transistor hFE (common emitter current gain) degradation. Electrical stress experiments are performed on transistors with different base doping profiles at varying temperatures. Detailed process simulations are performed to determine the doping profiles of the base-emitter junction. Monte Carlo transport simulations are then performed at different temperatures and bias conditions to determine the electron and hole distribution functions in the baseemitter junction. AT&T's 0.8 μ.m BICMOS technology is used to fabricate the experimental bipolar transistor structures. For this non-self aligned technology we attribute hFE degradation to the presence of hot holes and secondary electrons which are generated by hot hole impact ionization. This feed-back due to impact ionization has a dominant effect on the high energy tails of the distribution of both holes and electrons even when the overall current multiplication is low. Simple hot electron energy transport models do not contain the complexity to properly describe ionization feedback and carrier heating, and are therefore inadequate. An exponential dependence of the transistor lifetime on BVEBO is deduced for constant voltage stress (Vstress < BVEBO) conditions, confirming the importance of secondaries in the process of degradation.

Copper-Based Ohmic Contacts For The SiGe/Si Heterojunction Bipolar Transistor (HBT) Structure

1999 ◽  
Vol 564 ◽  
Author(s):  
K. Das ◽  
S. A. Alterovitz
Keyword(s):  
Surface Layer ◽  
Sheet Resistance ◽  
Multilayer Structure ◽  
Ohmic Contacts ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Low Resistance ◽  
Resistance Surface ◽  
Specific Contact ◽  
P Type

AbstractA Cu-based metallization scheme has been studied for establishing low resistance contacts for a Si/SiGe/Si heterojunction bipolar transistor (HBT) structure. As-grown doped layers were further implanted with BF2 and As ions for the p-type base and n-type emitter layers, respectively, in order to produce a low sheet resistance surface layer. Contacts were metallized using an e-beam deposited multilayer structure of Ti/Cu/Ti/Al. Specific contact resistances of the order of 10−7 Ω cm2 or lower were obtained.

The Challenge of GaAs Heterojunction Bipolar Transistor Integrated Circuit Technology.

1988 ◽  
Vol 144 ◽  
Author(s):  
Han-Tzong Yuan
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
Large Scale ◽  
Ohmic Contacts ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
The Status ◽  
Impurity Doping

ABSTRACTThe status and progress of AlGaAs/GaAs heterojunction bipolar transistor integrated circuits are reviewed. The challenge of fabricating large-scale integrated circuits using heterojunction bipolar transistors is discussed. Specifically, the issues related to low defect epitaxial materials, localized impurity doping techniques, simple and reliable ohmic contacts, and multilevel interconnects are examined.

scholarly journals Investigation of the static current gain for InP/InGaAs single heterojunction bipolar transistor

2019 ◽  
Vol 13 (3) ◽  
pp. 1345
Author(s):  
Jihane Ouchrif ◽  
Abdennaceur Baghdad ◽  
Aicha Sshel ◽  
Abdelmajid Badri ◽  
Abdelhakim Ballouk
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Communication Systems ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Technological Parameters ◽  
Device Structure ◽  
Optimal Values ◽  
Output Characteristics

<p>Heterojunction Bipolar Transistors are being used increasingly in communication systems due to their electrical performances. They are considered as excellent electronic devices. This paper presents an investigation of the static current gain β based on two technological parameters related to the device geometry for InP/InGaAs Single Heterojunction Bipolar Transistor (SHBT). These parameters are the base width  and the emitter length . We used Silvaco’s TCAD tools to design the device structure, and to extract the static current gain β from I-V output characteristics figures. According to this investigation, we determined the optimal values of the examined parameters which allow obtaining the highest static current gain β.</p>

INCREASING OF THE SHARPNESS OF p–n JUNCTIONS BY LASER PULSES

NANO ◽  
2011 ◽  
Vol 06 (01) ◽  
pp. 31-40 ◽  
Author(s):  
E. L. PANKRATOV
Keyword(s):  
Spatial Distribution ◽  
Laser Pulse ◽  
Annealing Time ◽  
Multilayer Structure ◽  
Surface Region ◽  
Laser Pulses ◽  
Dopant Distribution ◽  
Dopant Redistribution ◽  
Junction Rectifiers

Dopant redistribution in a multilayer structure during annealing by laser pulses for production of implanted-junction rectifiers has been analyzed. The analysis shows that heating the surface region of the multilayer structure leads to increasing of previously described effect of simultaneously increasing of sharpness of implanted-junction rectifier and homogeneity of dopant distribution in doped area. It was found that the theoretical spatial distribution of dopant agrees with the experimental one. Annealing time has been optimized for laser pulse annealing.

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