SPIN-POLARIZATION-DEPENDENT TRANSPORT IN GRAPHENE NANORIBBON WITH A VACANCY

2011 ◽  
Vol 10 (03) ◽  
pp. 533-538 ◽  
Author(s):  
CHUN-MEI LIU ◽  
NIAN-HUA LIU ◽  
ZHENG-FANG LIU ◽  
LI-PING AN

By using the first-principles density functional theory combining with the nonequilibrium Green’s function techniques, we investigate the electronic structure and the spin-polarization-dependent electronic transport of zigzag graphene nanoribbons (ZGNR) with a defect of vacancy. The total energy of the graphene ribbons corresponding to different vacancy locations is calculated to analyze the stability of the structures. It is found that the existence of a vacancy causes a significant change in the electronic band gap. The electronic band and the transport become spin-polarization-dependent. The calculated I–V characteristic shows that the spin-polarization-dependent effect can be enhanced under a finite bias voltage.

2017 ◽  
Vol 16 (04) ◽  
pp. 1750032 ◽  
Author(s):  
Wen Liu ◽  
Fan-Hua Meng ◽  
Jian-Hua Zhao ◽  
Xiao-Hui Jiang

The electronic transport properties of hybrid nanoribbons constructed by substituting zigzag graphane nanoribbons (ZGaNRs) into zigzag graphene nanoribbons (ZGNRs) are investigated with the non-equilibrium Green’s function method and the density functional theory. Both symmetric and asymmetric ZGNRs are considered. The electronic transport of symmetric and asymmetric ZGNR-based hybrid nanoribbons behave distinctly differently from each other even in the presence of the same substitution positions of ZGaNRs. Moreover, the electronic transport of these hybrid systems is found to be enhanced or weakened compared with pristine ZGNRs depending on the substitution position and proportion. Our results suggest that such hybridization is an effective approach to modulate the transport properties of ZGNRs.


2019 ◽  
Author(s):  
Henrik Pedersen ◽  
Björn Alling ◽  
Hans Högberg ◽  
Annop Ektarawong

Thin films of boron nitride (BN), particularly the sp<sup>2</sup>-hybridized polytypes hexagonal BN (h-BN) and rhombohedral BN (r-BN) are interesting for several electronic applications given band gaps in the UV. They are typically deposited close to thermal equilibrium by chemical vapor deposition (CVD) at temperatures and pressures in the regions 1400-1800 K and 1000-10000 Pa, respectively. In this letter, we use van der Waals corrected density functional theory and thermodynamic stability calculations to determine the stability of r-BN and compare it to that of h-BN as well as to cubic BN and wurtzitic BN. We find that r-BN is the stable sp<sup>2</sup>-hybridized phase at CVD conditions, while h-BN is metastable. Thus, our calculations suggest that thin films of h-BN must be deposited far from thermal equilibrium.


Author(s):  
Nilanjan Roy ◽  
Sucharita Giri ◽  
Harshit ◽  
Partha P. Jana

Abstract The site preference and atomic ordering of the ternary Rh5Ga2As have been investigated using first-principles density functional theory (DFT). An interesting atomic ordering of two neighboring elements Ga and As reported in the structure of Rh5Ga2As by X-ray diffraction data only is confirmed by first-principles total-energy calculations. The previously reported experimental model with Ga/As ordering is indeed the most stable in the structure of Rh5Ga2As. The calculation detected that there is an obvious trend concerning the influence of the heteroatomic Rh–Ga/As contacts on the calculated total energy. Interestingly, the orderly distribution of As and Ga that is found in the binary GaAs (Zinc-blende structure type), retained to ternary Rh5Ga2As. The density of states (DOS) and Crystal Orbital Hamiltonian Population (COHP) are calculated to enlighten the stability and bonding characteristics in the structure of Rh5Ga2As. The bonding analysis also confirms that Rh–Ga/As short contacts are the major driving force towards the overall stability of the compound.


RSC Advances ◽  
2021 ◽  
Vol 11 (38) ◽  
pp. 23477-23490
Author(s):  
Yonggang Wu ◽  
Jihua Zhang ◽  
Bingwei Long ◽  
Hong Zhang

The ZnWO4 (010) surface termination stability is studied using a density functional theory-based thermodynamic approach. The stability phase diagram shows that O-Zn, DL-W, and DL-Zn terminations of ZnWO4 (010) can be stabilized.


2010 ◽  
Vol 663-665 ◽  
pp. 519-522
Author(s):  
Cai Juan Xia ◽  
Han Chen Liu ◽  
Ying Tang Zhang

By Applying Nonequilibrium Green’s Function Formalism Combined First-Principles Density Functional Theory, we Investigate the Electronic Transport Properties of Thiophene and Furan Molecules with Different Quantum Length. the Influence of HOMO-LUMO Gaps and the Spatial Distributions of Molecular Orbitals on the Electronic Transport through the Molecular Device Are Discussed in Detail. the Results Show that the Transport Behaviors Are Determined by the Distinct Electronic Structures of the Molecular Compounds. the Length Dependence of Molecular Conductance Exhibits its Diversity for Different Molecules.


2018 ◽  
Vol 32 (29) ◽  
pp. 1850323
Author(s):  
Ting Ting Zhang ◽  
Cai Juan Xia ◽  
Bo Qun Zhang ◽  
Xiao Feng Lu ◽  
Yang Liu ◽  
...  

The electronic transport properties of oligo p-phenylenevinylene (OPV) molecule sandwiched with symmetrical or asymmetric tailoring graphene nanoribbons (GNRs) electrodes are investigated by nonequilibrium Green’s function in combination with density functional theory. The results show that different tailored GNRs electrodes can modulate the current–voltage characteristic of molecular devices. The rectifying behavior can be observed with respect to electrodes, and the maximum rectification ratio can reach to 14.2 in the asymmetric AC–ZZ GNRs and ZZ–AC–ZZ GNRs electrodes system. In addition, the obvious negative differential resistance can be observed in the symmetrical AC-ZZ GNRs system.


2017 ◽  
Vol 31 (33) ◽  
pp. 1750310 ◽  
Author(s):  
Jia-Ning Li ◽  
San-Lue Hu ◽  
Hao-Yu Dong ◽  
Xiao-Ying Xu ◽  
Jia-Fu Wang ◽  
...  

Under the tuning of an external electric field, the variation of the geometric structures and the band gaps of the wurtzite semiconductors ZnS, ZnO, BeO, AlN, SiC and GaN have been investigated by the first-principles method based on density functional theory. The stability, density of states, band structures and the charge distribution have been analyzed under the electric field along (001) and (00[Formula: see text]) directions. Furthermore, the corresponding results have been compared without the electric field. According to our calculation, we find that the magnitude and the direction of the electric field have a great influence on the electronic structures of the wurtzite materials we mentioned above, which induce a phase transition from semiconductor to metal under a certain electric field. Therefore, we can regulate their physical properties of this type of semiconductor materials by tuning the magnitude and the direction of the electric field.


2015 ◽  
Vol 1727 ◽  
Author(s):  
Yasutaka Nishida ◽  
Takashi Yoshida ◽  
Fumihiko Aiga ◽  
Yuichi Yamazaki ◽  
Hisao Miyazaki ◽  
...  

ABSTRACTIn this study, we investigated the influence of line defects consisting of pentagon-heptagon (5-7) pairs on the electronic transport properties of zigzag-edged and armchair-edged graphene nanoribbons (GNRs). Using the first-principles density functional theory, we study their electronic properties. To investigate their current-voltage (I-V) characteristics at low bias voltage (∼ 1 meV), we use the nonequilibrium Green’s function method. As a result, we found that the conductance of the GNRs having a connected line defect between source and drain shows better performance than that of the ideal zigzag-edged GNRs (ZGNRs). A detailed investigation of the transmission spectra and the wave function around the Fermi level reveals that the line defects arranged along the transport direction work similar to an edge state of the ZGNRs and can be an additional conduction channel. Our results suggest that such a line defect can be effective for low-resistance GNR interconnects.


MRS Advances ◽  
2019 ◽  
Vol 4 (44-45) ◽  
pp. 2419-2429 ◽  
Author(s):  
R. G. Diale ◽  
R. Modiba ◽  
P. E. Ngoepe ◽  
H. R. Chauke

ABSTRACTThe stability of the Ti50Pd50-xRux alloy was investigated using first-principles density functional theory within the plane-wave pseudopotential method. Firstly, the Ti50Pd50 gave equilibrium lattice parameter and lowest heats of formation in better agreement with experimental data to within 3%. The heat of formation decreases with an increase in Ru concentration, consistent with the trend of the density of states which is lowered at the Fermi level as Ru content is increased which suggests stability. It was also found that from the calculated elastic constants the structures showed positive shear modulus above 20 at. % Ru, condition of stability. Furthermore, the addition of Ru was found to strengthen the Ti50Pd50-xRux system at higher concentrations. The thermal coefficients of linear expansion for the Ti50Pd31.25Ru18. 75 are higher at low temperature, and that the TiPd-Ru system tends to expand more at low content of 18.75 at. % Ru than at higher content. Partial substitution of Pd with Ru was found more effective as a strengthening element and may enhance the martensitic transformation temperature of the Ti50Pd50 alloy.


2020 ◽  
Vol 10 (11) ◽  
pp. 4008
Author(s):  
Mahdi Faghihnasiri ◽  
Vahid Najafi ◽  
Farzaneh Shayeganfar ◽  
Ali Ramazani

Current research aims to investigate the mechanical properties of rare earth perovskite ferrites (RFeO3, R = La, Eu, Gd) utilizing density functional theory (DFT) calculations. Using the revised Perdew–Burke–Ernzerhof approximation for solids (PBEsol) approximation, the elastic constants, bulk, Young’s, and shear modulus, Poisson’s ratio, and anisotropic properties are calculated. The quantum theory of atoms in molecules (QTAIM) is employed to analyze the stability of chemical bonds in the structures subjected to an external loading. Based on these calculations, Fe-O and R-O bonds can be considered as nearly ionic, which is due to the large difference in electronegativity of R and Fe with O. Additionally, our results reveal that the charge density values of the Fe-O bonds in both structures remain largely outside of the ionic range. Finally, the mechanical response of LaFeO3, EuFeO3, and GdFeO3 compounds to various cubic strains is investigated. The results show that in RFeO3 by increasing the radius of the lanthanide atom, the mechanical properties of the material including Young’s and bulk modulus increase.


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