Reactive DC Magnetron Sputtered ZnO Thin Films for Piezoelectric Application

2018 ◽  
Vol 17 (03) ◽  
pp. 1760047
Author(s):  
M. Abinaya ◽  
K. M. Dhanisha ◽  
M. Manoj Cristopher ◽  
P. Deepak Raj ◽  
K. Jeyadheepan ◽  
...  

Zinc oxide (ZnO) films have been sputter coated over glass substrates at different cathode powers. Influence of cathode power on physical characteristics of ZnO samples was analyzed using X-ray diffractometer (XRD), field emission-scanning electron microscopy (FE-SEM), UV-Visible spectrophotometer and four-point probe (FPP) method. XRD patterns exhibited [Formula: see text]-axis-oriented ZnO and enhanced crystallinity with increase in cathode power due to the increase in adatom mobility. Uniformly arranged spherical grains were observed from FE-SEM images. The grain size increased from 25 to 40[Formula: see text]nm with increase in power. All samples exhibited high electrical resistance (G[Formula: see text]) which is compatible for piezoelectric application.

2013 ◽  
Vol 634-638 ◽  
pp. 2261-2263
Author(s):  
Khun Ngern Supunnee ◽  
Vatcharinkorn Mekla ◽  
Eakkarach Raksasri

In this work optical properties of CuO nanostructure were studied. CuO nanostructure were synthesized by the hydrothermal treatment method. The structural and chemical natures of the obtained materials were studied using powder X-ray diffraction (XRD), scanning electron microscopy (SEM) and study optical properties by UV-visible spectral. The XRD patterns of the CuO nanostructures indicated that CuO phases (JCPDS 05- 0661). The top-view SEM images, it can be seen clearly that high-density, horizontally scattered nanorod were grown on the product prepared at concentration of NaOH (aq) 7.5 M at 180 C for 12 h. The spectral of UV-vis data recorded showed the strong cut off at 341 nm.


2019 ◽  
Vol 33 (29) ◽  
pp. 1950348 ◽  
Author(s):  
B. Abdallah ◽  
M. D. Zidan ◽  
A. Allahham

Deposition of zinc sulfide (ZnS) thin films on Si (1 0 0) and glass substrates has been performed using RF magnetron sputtering method. Film structure has been analyzed by X-ray Diffraction (XRD), while the scanning electron microscope (SEM) images have been used to explore the film morphology. FTIR and Raman spectroscopies have been used to confirm the film composition. The stoichiometry has been verified by Energy dispersive X-ray spectroscopy (EDX) technique. The XRD patterns have indicated that the films possess a polycrystalline nanocrystallite cubic structure. The optical properties of the grown films were characterized by optical transmittance measurements (UV–Vis). The deduced energy bandgaps of the films show an increase from 3.75 eV to 3.88 eV with the power source changes from 90 W to 125 W. Furthermore, Z-scan technique (CW diode laser [Formula: see text] nm) was employed to estimate the nonlinear optical absorption of the prepared ZnS films.


2013 ◽  
Vol 307 ◽  
pp. 333-336
Author(s):  
Shiuh Chuan Her ◽  
Tsung Chi Chi

Zinc oxide (ZnO) thin films were deposited on glass substrate by Radio frequency (RF) magnetron sputtering. The effect of substrate temperature on the microstructure of the ZnO films has been investigated. Crystal structure and surface morphology of the films were examined by X-ray diffraction (XRD) and atomic force microscopy (AFM). XRD patterns and AFM images show that the crystallinity and grain size are increasing with the increase of substrate temperature.


2018 ◽  
Vol 34 (5) ◽  
pp. 2325-2331
Author(s):  
Reuben Seth Richter ◽  
A. Yaya ◽  
D. Dodoo-Arhin ◽  
B. Agyei-Tuffour ◽  
Robinson Juma Musembi ◽  
...  

In this work, the effect of indium (In) and gallium (Ga) dopants on the structural, optical and electrical properties of ZnO thin films was studied. ZnO thin films were deposited on glass substrates at 400°C using the spray pyrolysis deposition technique. X-ray diffraction (XRD) results indicated that both undoped and doped ZnO films had (002) preferred orientation. The undoped ZnO films were found to exhibit high transmittance above 80%, while indium-doped (In:ZnO) and gallium-doped (Ga:ZnO) films had transmittance above 60% and 70% respectively. From the Hall Effect measurements, doping improved the conductivity of the ZnO thin films however, In:ZnO films showed higher electrical conductivity compared to Ga:ZnO films. Electron probe microanalysis (EPMA) results were used to confirm the presence of the respective dopants in the thin film samples.


2013 ◽  
Vol 634-638 ◽  
pp. 2258-2260
Author(s):  
Sopa Noontasa ◽  
Vatcharinkorn Mekla ◽  
Sert Kiennork

In this work optical properties of CuO nanostructure were studied. CuO nanostructure were synthesized by the hydrothermal treatment method. The structural and chemical natures of the obtained materials were studied using powder X-ray diffraction (XRD), scanning electron microscopy (SEM) and study optical properties by UV-visible spectral. The XRD patterns of the CuO nanostructures indicated that CuO phases (JCPDS 05- 0661). The top-view SEM images, it can be seen clearly that high-density, horizontally scattered nanorod were grown on the product prepared at concentration of NaOH (aq) 7.5 M at 180 C for 12 h. The spectral of UV-vis data recorded showed the strong cut off at 341 nm.


2006 ◽  
Vol 11-12 ◽  
pp. 159-162 ◽  
Author(s):  
Yong Ge Cao ◽  
Lei Miao ◽  
Sakae Tanemura ◽  
Yasuhiko Hayashi ◽  
Masaki Tanemura

Transparent indium-doped ZnO (IZO) films with low In content (<6at%) were fabricated through radio-frequency (rf) helicon magnetron sputtering. Formation of In-Zn-O solid solution was confirmed by X-ray diffraction (XRD) patterns. Incorporation of indium into ZnO films enhances the optical transmission in the visible wavelength. The optical band-gaps slightly increase from 3.25eV (ZnO) to 3.28eV (In0.04Zn0.96O) and to 3.30eV (In0.06Zn0.94O) due to Burstain-Moss effect. The Urbach tail parameter E0, which is believed to be a function of structural disorder, increases from 79meV (ZnO), to 146meV (In0.04Zn0.96O), and to 173meV (In0.06Zn0.94O), which is consistent with increase of Full-Width Half-Maximum (FWHM) in corresponding XRD patterns. Decreasing in crystal quality with increasing indium concentration is also confirmed by photoluminescence spectra.


Author(s):  
Nikolai S. Pshchelko ◽  
Ekaterina G. Vodkailo ◽  
Vladimir V. Tomaev ◽  
Boris D. Klimenkov ◽  
Veniamin L. Koshevoi ◽  
...  

Some results are provided confirming that modifying of the zinc films fabricated on glass substrates by a resulting effect of heat treatment in an atmosphere of dry air and action of cross electric field is possible. Using scanning electron microscopy (measured with the Zeiss Merlin microscope) the surface morphology of the films was studied. Also, the elemental composition of the films by micro-X-ray spectral analysis was studied. On the glass substrates, by the method of vacuum thermal evaporation, zinc films (Zn) with thickness of ~ 500 nm were obtained. In order to form ZnO films, the original films were treated at 250 °C in a dry air atmosphere, and in another case - in addition to the sample a transverse electric field with a potential of 300 V was applied. Platinum films on the silicon dioxide layer were obtained using the method of the ion-plasma sputtering. These layers were investigated by X-ray phase analysis, electron and atomic force microscopy. The thickness of platinum layers was 50 and 100 nm. During the deposition (deposition temperature – 300 °C, deposition rate - 5 nm / min), applied voltage between the platinum film and the silicon plate was 5 V. The films, obtained by applying a biasing, showed a more homogeneous fine-grained structure and a higher rate of growth than the original samples.  In this way ZnO films can be manufactured with the extended surface. The possibility of significant changes caused by electric field use in adhesion, structure and conductive properties of the coatings is discussed. The method of depositing platinum on a dielectric substrate with an additional electrostatic field is also substantiated. It is shown that the application of an electric voltage to the film leads to a significant change in the structure of the resulting coating.Forcitation:Pshchelko N.S., Vodkailo E.G., Tomaev V.V., Klimenkov B.D., Koshevoi V.L., Belorus A.O. Influence of electric field on adhesion and structure of conducting films on dielectric substances. Izv. Vyssh. Uchebn. Zaved. Khim. Khim. Tekhnol. 2017. V. 60. N 8. P. 100-104.


2003 ◽  
Vol 18 (1) ◽  
pp. 151-155 ◽  
Author(s):  
Zhijian Wang ◽  
Haiming Zhang ◽  
Zhijun Wang ◽  
Ligong Zhang ◽  
Jinshan Yuan ◽  
...  

Structure and ultraviolet emission characteristics of amorphous ZnO films grown on indium tin oxide coated glass substrates by electrophoretic deposition were investigated using Raman spectra and photoluminescence. The Raman spectrum shows a unique resonant multiphonon process within amorphous ZnO films. The photoluminescence spectrum of amorphous ZnO films shows a strong ultraviolet emission while the visible emission is nearly fully quenched. The transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectrum, and infrared spectrum are used to detect the structure of amorphous ZnO powder. The complex water plays an important role in the photoluminescence intensity emission.


2021 ◽  
Vol 12 (4) ◽  
pp. 2523-2529
Author(s):  
Daniel Sam N ◽  
Anish C I ◽  
Sabeena G ◽  
Rajaduraipandian S ◽  
Manobala ◽  
...  

Sol gel methods were used for the study of the antimicrobial activity of Cd-TiO2 against gram-negative and positive bacteria. These Cd-TiO2 have been characterized by various optical and techniques. They have been exhibited by X-ray diffraction, scanning electron microscopy, ultraviolet spectroscopy, and infrared spectroscopy. The structures of the various XRD patterns indicate that the product has a structure. The particle size of Cd-TiO2 is 35nm. The SEM images confirm the spherical appearance of the sample. The energy X-ray spectra have been confirmed as well and then C, O, Ti, Cd, Pt element are present in Cd-TiO2. The weight percentage of Cadmium is 5.8%, Ti is 51.03%, C is 5.13% and O is 31.75% in Cd-TiO2. BET image shows that the major pore size distribution of Cd-TiO2 is ranged from 2.24 nm. The Cd-TiO2 that the antibacterial activity when tested against the pathogens only gram-negative bacteria such as Pseudomonas. The zone of minimum inhibition concentration was measured in a range of 20mm in 25μl and 30mm in 100μl.


2019 ◽  
Vol 9 (21) ◽  
pp. 4509
Author(s):  
Weijia Yang ◽  
Fengming Wang ◽  
Zeyi Guan ◽  
Pengyu He ◽  
Zhihao Liu ◽  
...  

In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.


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