Crystalline Grains and Electrical Properties of Vacuumevaporated SnO2Thin Films

1995 ◽  
Vol 403 ◽  
Author(s):  
W. K. Man ◽  
H. Yan ◽  
S. P. Wong ◽  
T. K. S. Wong ◽  
I. H. Wilson
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Grain Growth ◽  
Metal Films ◽  
3 Dimensional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Diode Ideality Factor ◽  
Current Voltage ◽  
Tin Metal

AbstractWe have studied grain growth and electrical properties of polycrystalline tin oxide (SnO2) thin films prepared by vacuum-evaporation with a two-step process: evaporation of tin metal films and then oxidation of these metal films. Surface morphology of the SnO2thin films was observed by atomic force microscopy. The grain size of the SnO2thin films is found to increase with the film thickness and oxidation temperature. Kinetics of the grain growth is discussed in terms of a 3-dimensional diffusion limited process. The diode current-voltage (I-V) characteristic of the SnO2/Si heterojunctions (isotype and anisotype) was measured in the temperature range of 14K-383K. Changes in the diode ideality factor and threshold voltage with temperature are discussed. In addition, we present ambient tunnelling I-V results measured from individual SnO2grains.

Anthracene dopping effects on thin films properties of octakis(alkylthio) substituted lutetium bisphthalocyanine

2013 ◽  
Vol 17 (06n07) ◽  
pp. 454-459 ◽  
Author(s):  
Aseel Hassan ◽  
Tamara Basova ◽  
Ayşe Gül Gürek ◽  
Vefa Ahsen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Organic Solar Cells ◽  
Electronic Device ◽  
Structural Features ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Structural And Electrical Properties ◽  
Device Applications

In this work, the investigation of structural features, spectral and electrical properties of spin-coated films of substituted lutetium bisphthalocyanine Lu ( Pc ( SR )8)2, where R = - C 6 H 13 was carried out. The current-voltage characteristics of ITO/ Lu ( Pc ( SR )8)2/ Al film sandwich structures were measured over the temperature range 120–380 K. AC electrical properties, mainly the dependence of conductance and capacitance on frequency and temperature are also discussed. Structural and electrical properties of anthracene-doped Lu ( Pc ( SR )8)2, films have also been investigated. Furthermore, optical properties of thin films of pure and anthracene-doped Lu ( Pc ( SR )8)2 films were also studied using spectroscopic ellipsometry, while atomic force microscopy (AFM) was used to study changes in films' morphology of doped films and compared with that of undoped films. Doping Lu ( Pc ( SR )8)2, films with anthracene is shown to lead to an increase in films' conductivity. These studies will provide full understanding of the physical properties of the Lu ( Pc ( SR )8)2, thin films, both doped and undoped, with the aim of exploitation in electronic device applications, such as fabrication of all organic solar cells.

Nanostructured TiO2 Thin Film by Sol-Gel Spin Coating with Different Concentration

2015 ◽  
Vol 1109 ◽  
pp. 529-533
Author(s):  
Irma Hidayanti Halim Affendi ◽  
Najwa Ezira Ahmed Azhar ◽  
Puteri Sarah Mohamad Saad ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Surface Morphology ◽  
Spin Coating ◽  
Sol Gel ◽  
Force Microscopy ◽  
Nanostructured Thin Film ◽  
Atomic Force ◽  
Current Voltage

The production of TiO2 nanostructured thin film was synthesized by sol-gel method using TiO2 nanopowder as precursor. The solution of TiO2 was then deposited as thin film onto glass substrate by spin-coating technique. The aim is to investigate the effect of concentrations on the surface morphology and electrical properties of the thin films. The effect on the surface morphology was observed by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM). The electrical properties were then observed by two-point probe method. By measuring the current-voltage (IV) characteristic, resistivity and conductivity can be measured. The purpose of this paper is to investigate the surface morphology and the IV characteristic of the thin films.

I-V and Surface Topography Study of Nanostructure Porous Silicon Layer Prepared by Electrochemical Etching

2012 ◽  
Vol 576 ◽  
pp. 519-522 ◽  
Author(s):  
Fadzilah Suhaimi Husairi ◽  
Maslihan Ain Zubaidah ◽  
Shamsul Faez M. Yusop ◽  
Rusop Mahmood Mohamad ◽  
Saifolah Abdullah
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Surface Topography ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
P Type

This article reports on the electrical properties of porous silicon nanostructures (PSiNs) in term of its surface topography. In this study, the PsiNs samples were prepared by using different current density during the electrochemical etching of p-type silicon wafer. PSiNs has been investigated its electrical properties and resistances for different surface topography of PSiNs via current-voltage (I-V) measurement system (Keithley 2400) while its physical structural properties was investigated by using atomic force microscopy (AFM-XE100).

Observation of the effects of Bi-deficiency on ferroelectric and electrical properties in Bi(1+x)FeO3/La0.65Sr0.35MnO3 heterostructures via atomic force microscopy

RSC Advances ◽  
2016 ◽  
Vol 6 (116) ◽  
pp. 115039-115045 ◽  
Author(s):  
Qing Liu ◽  
Jieling Zhang ◽  
Ling Wei ◽  
Weifeng Zhang
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Force Microscopy ◽  
Atomic Force

Bi(1+x)FeO3 thin films with different Bi contents (x = 0%, 5%, and 10%) were grown on (001) SrTiO3 substrates with La0.65Sr0.35MnO3 (LSMO) buffered layers via pulsed laser deposition.

Measuring the Absorption Coefficients of TiN Thin Films with Different Thickness

2017 ◽  
Vol 904 ◽  
pp. 120-124
Author(s):  
Hao Yu Chu ◽  
Yu Xiong Li ◽  
Cheng Yan Gu ◽  
Chun Ping Jiang
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
Absorption Coefficients ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cathodoluminescence Spectroscopy ◽  
Tin Thin Films ◽  
Tin Metal ◽  
Different Thickness

In this work, different thick TiN thin films were prepared by pulsed laser deposition on GaN substrates at 650°C. The crystal structure and morphology are characterized by X-ray Diffraction and Atomic Force Microscopy. We characterized the sample by cathodoluminescence spectroscopy at room temperature and measured the thickness of the film by a cross-sectional scanning electron microscopy. Combining the attenuation of light intensity and the thickness, the absorption coefficient of the samples can be estimated by the Beer-Lambert law. The absorption coefficients of TiN metal thin film obtained here are closed with each other. The optical properties may not change with increasing thickness.

Structures and Electrical Properties of Fullerene Thin Films on Si(111)-7×7 Surface Investigated by Noncontact Atomic Force Microscopy

2000 ◽  
Vol 39 (Part 1, No. 6B) ◽  
pp. 3827-3829 ◽  
Author(s):  
Kei Kobayashi ◽  
Hirofumi Yamada ◽  
Toshihisa Horiuchi ◽  
Kazumi Matsushige
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Force Microscopy ◽  
Atomic Force

scholarly journals Оптические и фотоэлектрические свойства тонких пленок GaS и гетероструктуры GaS/InSe

2019 ◽  
Vol 126 (5) ◽  
pp. 538
Author(s):  
А.Г. Гусейнов ◽  
В.М. Салманов ◽  
Р.М. Мамедов ◽  
А.А. Салманова ◽  
Ф.М. Ахмедова
Keyword(s):  
Thin Films ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Silar Method ◽  
X Ray ◽  
Force Microscopy ◽  
Photoelectric Properties ◽  
Atomic Force ◽  
Current Voltage ◽  
Luminescence Characteristics

AbstractGaS thin films have been grown by the SILAR method, their structures have been analyzed, and their optical and photoelectric properties have been investigated. The internal structure of the samples obtained have been studied using X-ray diffraction (XRD) analysis, atomic force microscopy (AFM), energy-dispersive X-ray (EDX) spectroscopy, and scanning electron microscopy (SEM). The GaS band gap has been determined from the absorption spectrum. p -GaS/ n -InSe heterojunctions have been formed on the basis of GaS crystals and InSe thin films. Current–voltage, optical, photoelectric, and luminescence characteristics of p -GaS/ n -InSe heterojunctions have been experimentally investigated.

Atomic Force Microscopy of the Local Electrical Properties of Bilayer Polyaniline-Polystyrene/P(VDF-TrFE) Composite

2021 ◽  
Vol 899 ◽  
pp. 506-511
Author(s):  
Artem V. Budaev ◽  
Ivanna N. Melnikovich ◽  
Vasily E. Melnichenko ◽  
Nikita A. Emelianov
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Polymer Nanocomposite ◽  
Charge Carriers ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Piezoelectric Force Microscopy ◽  
Microscopy Techniques

Atomic force microscopy techniques (conductive-AFM, I-V spectroscopy and PFM) were used for characterisation of the local electrical properties of bilayer polyaniline-polystyrene/P(VDF-TrFE) polymer nanocomposite. Observed hysteresis of current-voltage characteristics confirms its memristive properties. It was caused by the influence of the ferroelectric polarization of P(VDF-TrFE) layer, the domain structure of which was visualised by piezoelectric force microscopy on the transport of charge carriers at the interface.

Investigation of electrical properties of peald-deposited Ti/Al2O3/Al/Si MIM capacitors

2021 ◽  
pp. 2140045
Author(s):  
Sumit Patil ◽  
Viral Barhate ◽  
Ashok Mahajan ◽  
Haoyu Xu ◽  
Mohammad Rasadujjaman ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer ◽  
Stable Phase ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Current Voltage ◽  
Different Temperatures ◽  
Mim Capacitors

MIM devices fabricated with 10-nm thickness of Al2O3 high-[Formula: see text] thin film deposited using plasma-enhanced atomic layer deposition (PEALD) system on Al-coated Si substrate were investigated. The structural, morphological and electrical properties of Ti/Al2O3/Al/Si MIM capacitors as-deposited and post-deposition annealed (PDA) at different temperatures were studied and compared. Al2O3 thin films were investigated using atomic force microscopy (AFM) and X-ray diffraction (XRD) and Ti/Al2O3/Al/Si MIM capacitors were characterized by current–voltage ([Formula: see text]–[Formula: see text] and capacitance–voltage ([Formula: see text]–[Formula: see text] measurements. The stable phase formation of Ti/Al2O3/Al/Si MIM capacitor provides the lowest leakage current density in the range of nA/cm2 for as-deposited and annealed films.

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