Uniform Formation of Two-dimensional and Three-dimensional InAs Islands on GaAs by Molecular Beam Epitaxy

Monolayer antimony (antimonene) has been reported for its excellent properties, such as tuneable band gap, stability in the air, and high mobility. However, growing high quality, especially large-area antimonene, remains challenging. In this study, we report the direct growth of antimonene on c-plane sapphire substrate while using molecular beam epitaxy (MBE). We explore the effect of growth temperature on antimonene formation and present a growth phase diagram of antimony. The effect of antimony sources (Sb2 or Sb4) and a competing mechanism between the two-dimensional (2D) and three-dimensional (3D) growth processes and the effects of adsorption and cracking of the source molecules are also discussed. This work offers a new method for growing antimonene and it provides ideas for promoting van der Waals epitaxy.

Download Full-text

Growth and Decay of Germanium Islands on Silicon Studied by High Temperature Stm

MRS Proceedings ◽

10.1557/proc-583-155 ◽

1999 ◽

Vol 583 ◽

Author(s):

M. Kästner ◽

B. Voigtländer

Keyword(s):

High Temperature ◽

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Scanning Tunneling Microscope ◽

Strain Energy ◽

Molecular Beam ◽

Three Dimensional ◽

Scanning Tunneling ◽

Two Dimensional ◽

Tunneling Microscope

AbstractWe use a scanning tunneling microscope (STM) capable of imaging the growing layer at high temperature during molecular beam epitaxy (MBE) to study the epitaxial growth of Germanium on Silicon and the decay of Ge islands. The periodicity of the (2×N) reconstruction of two-dimensional Ge layers on Si(001) is measured as function of the Ge coverage. Strain energy drives the formation of the (2×N) reconstruction and Si/Ge intermixing. A comparison to total energy calculations predicting the periodicity of the (2×N) reconstruction is used to estimate the amount of Si-Ge intermixing near the surface. The evolution of the size and shape of individual “hut clusters” is measured and explained by kinetically self-limiting growth. The relaxation of kinetically a determined morphology towards equilibrium is followed for a Ge layer on Si(111). Strained two-dimensional as well as partially relaxed three-dimensional islands dissolve and are soaked up by larger three-dimensional islands which are dislocated and therefore fully relaxed.

Download Full-text

Two Dimensional to Three Dimensional Growth Transition during GaAs Molecular Beam Epitaxy Studied by in-situ Scanning Electron Microscopy.

Shinku ◽

10.3131/jvsj.41.108 ◽

1998 ◽

Vol 41 (3) ◽

pp. 108-110

Author(s):

Katsuto TANAHASHI ◽

Yuichi KAWAMURA ◽

Naohisa INOUE ◽

Yoshikazu HOMMA

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Three Dimensional ◽

Two Dimensional ◽

Dimensional Growth ◽

Scanning Electron

Download Full-text

Screw-Dislocation-Driven Growth Mode in Two Dimensional GaSe on GaAs(001) Substrates Grown by Molecular Beam Epitaxy

Scientific Reports ◽

10.1038/s41598-019-54406-5 ◽

2019 ◽

Vol 9 (1) ◽

Cited By ~ 4

Author(s):

Nhu Quynh Diep ◽

Cheng-Wei Liu ◽

Ssu-Kuan Wu ◽

Wu-Ching Chou ◽

Sa Hoang Huynh ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Screw Dislocation ◽

Growth Mechanism ◽

Molecular Beam ◽

Second Harmonic ◽

Three Dimensional ◽

Molecular Beam Epitaxy Growth ◽

Initial Growth ◽

Two Dimensional ◽

Pretreatment Period

AbstractRegardless of the dissimilarity in the crystal symmetry, the two-dimensional GaSe materials grown on GaAs(001) substrates by molecular beam epitaxy reveal a screw-dislocation-driven growth mechanism. The spiral-pyramidal structure of GaSe multi-layers was typically observed with the majority in ε-phase. Comprehensive investigations on temperature-dependent photoluminescence, Raman scattering, and X-ray diffraction indicated that the structure has been suffered an amount of strain, resulted from the screw-dislocation-driven growth mechanism as well as the stacking disorders between monolayer at the boundaries of the GaSe nanoflakes. In addition, Raman spectra under various wavelength laser excitations explored that the common ε-phase of 2D GaSe grown directly on GaAs can be transformed into the β-phase by introducing a Se-pretreatment period at the initial growth process. This work provides an understanding of molecular beam epitaxy growth of 2D materials on three-dimensional substrates and paves the way to realize future electronic and optoelectronic heterogeneous integrated technology as well as second harmonic generation applications.

Download Full-text