Influence of an In-Situ Formed Interfacial SiNx Layer on the Electrical Performance and Thermal Stability of High-k HfO2 Films

2019 ◽  
Vol 1 (5) ◽  
pp. 257-266 ◽  
Author(s):  
Sug H. Hong ◽  
Jeong Hwan Kim ◽  
Taejoo Park ◽  
J.Y Won ◽  
R.J Jung ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electrical Performance ◽  
High K ◽  
Thermal Stability Of ◽  
Sinx Layer

High-Temperature Dielectric Materials from Atomically-Thin Perovskites

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000164-000168
Author(s):  
Minoru Osada ◽  
Takayoshi Sasaki
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
High Temperatures ◽  
Electronic Materials ◽  
Dielectric Materials ◽  
Layered Compound ◽  
Layer By Layer ◽  
High K ◽  
Thermal Stability Of

Abstract The search of new electronic materials for high-temperature applications has been a significant challenge in recent years. In automotive industries, for example, cutting-edge technology requires electronic components operable at high temperatures (> 200 °C). The absence of suitable capacitors is one of the major barriers to meet this goal. Here we provide a solution to these issues by using an atomically-thin perovskite nanosheet (Ca2Nb3O10), a two-dimensional material derived from the exfoliation of a layered compound. Through in-situ characterizations, we found a robust thermal stability of Ca2Nb3O10 nanosheet even in a monolayer form (~ 2 nm). Furthermore, layer-by-layer assembled nanocapacitors retained both size-free high-εr characteristic and high insulation resistance at high temperatures up to 250 °C. The simultaneous improvement of εr and thermal stability in high-k nanodielectrics is of critical technological importance for the use of high-temperature capacitors.

Experimental observations of the thermal stability of high-k gate dielectric materials on silicon

2002 ◽  
Vol 303 (1) ◽  
pp. 54-63 ◽  
Author(s):  
P.S. Lysaght ◽  
P.J. Chen ◽  
R. Bergmann ◽  
T. Messina ◽  
R.W. Murto ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gate Dielectric ◽  
Dielectric Materials ◽  
High K ◽  
Thermal Stability Of ◽  
High K Gate Dielectric

An in situ TEM observation on the thermal stability of a nanocrystalline FeBSi alloy

1993 ◽  
Vol 16 (5) ◽  
pp. 260-264 ◽  
Author(s):  
H.Y. Tong ◽  
B.Z. Ding ◽  
H.G. Jiang ◽  
Z.Q. Hu ◽  
L. Dong ◽  
...  
Keyword(s):  
Thermal Stability ◽  
In Situ Tem ◽  
Thermal Stability Of

In-Situ Annealing Study on the Thermal Stability of Nickel Germanides

2007 ◽  
Vol 50 (3) ◽  
pp. 677 ◽  
Author(s):  
Jae-Wook Jae-Wook ◽  
Kyung-Hwan Kyung-Hwan ◽  
Hyoungsub Hyoungsub ◽  
Cheol-Woong Cheol-Woong ◽  
Dongwon Dongwon ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Nickel Germanides ◽  
Annealing Study ◽  
Thermal Stability Of

scholarly journals Thermal Stability of Octadecyltrichlorosilane and Perfluorooctyltriethoxysilane Monolayers on SiO2

Nanomaterials ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 210
Author(s):  
Xiangdong Yang ◽  
Haitao Wang ◽  
Peng Wang ◽  
Xuxin Yang ◽  
Hongying Mao
Keyword(s):  
Thermal Stability ◽  
Thermal Behavior ◽  
Work Function ◽  
Photoelectron Spectroscopy ◽  
Vacuum Annealing ◽  
Moderate Temperature ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
X Ray ◽  
Thermal Stability Of

Using in situ ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) measurements, the thermal behavior of octadecyltrichlorosilane (OTS) and 1H, 1H, 2H, and 2H-perfluorooctyltriethoxysilane (PTES) monolayers on SiO2 substrates has been investigated. OTS is thermally stable up to 573 K with vacuum annealing, whereas PTES starts decomposing at a moderate temperature between 373 K and 423 K. Vacuum annealing results in the decomposition of CF3 and CF2 species rather than desorption of the entire PTES molecule. In addition, our UPS results reveal that the work function (WF)of OTS remains the same after annealing; however WF of PTES decreases from ~5.62 eV to ~5.16 eV after annealing at 573 K.

Thermal stability of Pt nanowires manufactured by Ga+ focused ion beam (FIB)

2003 ◽  
Vol 777 ◽  
Author(s):  
B.J. Inkson ◽  
G. Dehm
Keyword(s):  
Thermal Stability ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Wire Surface ◽  
Cross Sectional ◽  
Partial Crystallization ◽  
Fcc Structure ◽  
Thermal Stability Of ◽  
Pt Nanowires

AbstractPt nanowires have been produced by FIB deposition of Pt thin films in a commercial Ga+ focused ion beam (FIB) system, followed by cross-sectional sputtering to form electron transparent Pt nanowires. The thermal stability of amorphous FIB manufactured Pt wires has been investigated by in-situ thermal cycling in a TEM. The Pt wires are stable up to 580-650°C where partial crystallization is observed in vacuum. Facetted nanoparticles grow on the wire surface, growing into free space by surface diffusion and minimising contact area with the underlying wire. The particles are fcc Pt with some dissolved Ga. Continued heating results in particle spheroidization, coalescence and growth, retaining the fcc structure.

A furnace for in situ synchrotron Laue diffraction and its application to studies of solid-state phase transformations

1990 ◽  
Vol 23 (6) ◽  
pp. 545-549 ◽  
Author(s):  
H. L. Bhat ◽  
S. M. Clark ◽  
A. El Korashy ◽  
K. J. Roberts
Keyword(s):  
Experimental Data ◽  
Thermal Stability ◽  
Phase Transitions ◽  
Solid State ◽  
Synchrotron Radiation ◽  
Structural Phase ◽  
Structural Phase Transitions ◽  
Laue Diffraction ◽  
Thermal Stability Of

The design of a new microfurnace for use for Laue diffraction studies of solid-state transformations is described. The furnace operates in the temperature range 298–573 K with a thermal stability of about ± 0.1 K. The potential of the synchrotron-radiation Laue diffraction technique for studies of structural phase transitions is demonstrated. Experimental data on phase transitions in caesium periodate, potassium tetrachlorozincate and pentaerythritol are presented.

Improved thermal stability of Al2O3/HfO2/Al2O3 high-k gate dielectric stack on GaAs

2010 ◽  
Vol 96 (14) ◽  
pp. 142112 ◽  
Author(s):  
Dong Chan Suh ◽  
Young Dae Cho ◽  
Sun Wook Kim ◽  
Dae-Hong Ko ◽  
Yongshik Lee ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gate Dielectric ◽  
High K ◽  
Thermal Stability Of ◽  
High K Gate Dielectric
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