Simulation of a Solid Phase Cathodic Electro-Fenton Process as an Alternative for Improving the Quality of Treated Water

2021 ◽  
Vol 101 (1) ◽  
pp. 95-100
Author(s):  
Luis Alberto Romero Orellana ◽  
Mercedes Teresita Oropeza-Guzmán ◽  
Paul Antonio Valle-Trujillo ◽  
Yadira Gochi-Ponce
Keyword(s):  
Solid Phase ◽  
Fenton Process ◽  
Treated Water

ВЛИЯНИЕ ТВЕРДОФАЗНОЙ РЕКРИСТАЛЛИЗАЦИИ С ДВОЙНОЙ ИМПЛАНТАЦИЕЙ НА ПЛОТНОСТЬ СТРУКТУРНЫХ ДЕФЕКТОВ В УЛЬТРАТОНКИХ СЛОЯХ КРЕМНИЯ НА САПФИРЕ

2020 ◽  
Vol 96 (3s) ◽  
pp. 154-159
Author(s):  
Н.Н. Егоров ◽  
С.А. Голубков ◽  
С.Д. Федотов ◽  
В.Н. Стаценко ◽  
А.А. Романов ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Solid Phase ◽  
Modern Method ◽  
Structural Defects ◽  
Structural Quality ◽  
Mos Transistors ◽  
Ultrathin Layers ◽  
Heteroepitaxial Layers ◽  
Xrd And Tem

Высокая плотность структурных дефектов является основной проблемой при изготовлении электроники на гетероструктурах «кремний на сапфире» (КНС). Современный метод получения ультратонких структур КНС с помощью твердофазной эпитаксиальной рекристаллизации позволяет значительно снизить дефектность в гетероэпитаксиальном слое КНС. В данной работе ультратонкие (100 нм) слои КНС были получены путем рекристаллизации и утонения субмикронных (300 нм) слоев кремния на сапфире, обладающих различным структурным качеством. Плотность структурных дефектов в слоях КНС оценивалась с помощью рентгеноструктурного анализа и просвечивающей электронной микроскопии. Кривые качания от дифракционного отражения Si(400), полученные в ω-геометрии, продемонстрировали максимальную ширину на полувысоте пика не более 0,19-0,20° для ультратонких слоев КНС толщиной 100 нм. Формирование структурно совершенного субмикронного слоя КНС 300 нм на этапе газофазной эпитаксии обеспечивает существенное уменьшение плотности дислокаций в ультратонком кремнии на сапфире до значений ~1 • 104 см-1. Тестовые n-канальные МОП-транзисторы на ультратонких структурах КНС характеризовались подвижностью носителей в канале 725 см2 Вс-1. The high density of structural defects is the main problem on the way to the production of electronics on silicon-on-sapphire (SOS) heteroepitaxial wafers. The modern method of obtaining ultrathin SOS wafers is solid-phase epitaxial recrystallization which can significantly reduce the density of defects in the SOS heteroepitaxial layers. In the current work, ultrathin (100 nm) SOS layers were obtained by recrystallization and thinning of submicron (300 nm) SOS layers, which have various structural quality. The density of structural defects in the layers was estimated by using XRD and TEM. Full width at half maximum of rocking curves (ω-geometry) was no more than 0.19-0.20° for 100 nm ultra-thin SOS layers. The structural quality of 300 nm submicron SOS layers, which were obtained by CVD, depends on dislocation density in 100 nm ultrathin layers. The dislocation density in ultrathin SOS layers was reduced by ~1 • 104 cm-1 due to the utilization of the submicron SOS with good crystal quality. Test n-channel MOS transistors based on ultra-thin SOS wafers were characterized by electron mobility in the channel 725 cm2 V-1 s-1.

scholarly journals Effect of Fertilisation on the Quality of Dried Coriander (Coriandrum sativum L.) and Lovage (Levisticum officinale)

Agriculture ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 386
Author(s):  
Natalia Matłok ◽  
Józef Gorzelany ◽  
Adam Figiel ◽  
Maciej Balawejder
Keyword(s):  
Bioactive Compounds ◽  
Crop Production ◽  
Solid Phase ◽  
Quality Parameters ◽  
Raw Material ◽  
Vacuum Microwave ◽  
Dpph Method ◽  
Total Antioxidant ◽  
Total Antioxidant Potential

The study presents the effects of fertilisation on selected quality parameters of the dried material obtained from plants of lovage and coriander. During the crop production process, the plants were treated with two fertilisers containing substances potentially acting as elicitors. The dried material was obtained in course of a drying process carried out in optimum conditions and based on the CD-VMFD method which combines convective pre-drying (CD) at a low temperature (40 °C) with vacuum-microwave finish drying with the use of 240 W microwaves (VMFD). The quality of the dried material was evaluated through measurement of the total contents of polyphenols, total antioxidant potential (ABTS and DPPH method), and the profile of volatile compounds (headspace-solid phase microextractio-HS-SPME) as well as assessment of the colour. It was found that by applying first fertilisation (with organic components) it is possible to significantly increase the contents of both bioactive compounds and volatile substances responsible for the aroma. It was determined that the higher content of bioactive compounds was related to the composition of the first fertiliser, presumably the extract from common nettle. The study showed that the application of the first fertiliser contributed to enhanced quality parameters of the raw material obtained.

Patulin Surveillance in Apple Cider and Juice Marketed in Michigan

2009 ◽  
Vol 72 (6) ◽  
pp. 1255-1261 ◽  
Author(s):  
KERRI L. HARRIS ◽  
GERD BOBE ◽  
LESLIE D. BOURQUIN
Keyword(s):  
High Performance ◽  
Apple Juice ◽  
Solid Phase ◽  
Uv Light ◽  
Grocery Store ◽  
Grocery Stores ◽  
Apple Cider ◽  
Shelf Stable ◽  
Retail Grocery

Patulin is the most common mycotoxin found in apples and apple juices. The objective of this study was to determine the concentrations of patulin in (i) apple cider produced and marketed by Michigan apple cider mills during the fall seasons of 2002 to 2003 and 2003 to 2004 and (ii) apple juice and cider, including shelf-stable products, marketed in retail grocery stores in Michigan throughout 2005 and 2006. End product samples (n = 493) obtained from 104 Michigan apple cider mills were analyzed for patulin concentration by using solid-phase extraction followed by high-performance liquid chromatography. Patulin was detected (≥4 μg/liter) in 18.7% of all cider mill samples, with 11 samples (2.2%) having patulin concentrations of ≥50 μg/liter. A greater percentage of cider samples obtained from mills using thermal pasteurization contained detectable patulin (28.4%) than did those from mills using UV light radiation (13.5%) or no pathogen reduction treatment (17.0%). Among retail grocery store samples (n = 159), 23% of apple juice and cider samples contained detectable patulin, with 18 samples (11.3%) having patulin concentrations of ≥50 μg/liter. The U.S. Food and Drug Administration (FDA) action level for patulin is 50 μg/kg. Some apple juice samples obtained from retail grocery stores had exceptionally high patulin concentrations, ranging up to 2,700 μg/liter. Collectively, these results indicate that most apple cider and juice test samples from Michigan were below the FDA action level for patulin but that certain apple cider and juice processors have inadequate controls over patulin concentrations in final products. The industry, overall, should focus on improved quality of fruit used in juice production and improve culling procedures to reduce patulin concentrations.

Defect Reduction and Defect Engineering in Silicon-on-Sapphire Material Using Ge Implantation

1990 ◽  
Vol 201 ◽  
Author(s):  
F. Namavar ◽  
E. Cortesi ◽  
N. M. Kalkhoran ◽  
J. M. Manke ◽  
B. L. Buchanan
Keyword(s):  
Leakage Current ◽  
Defect Density ◽  
Solid Phase ◽  
Substantial Reduction ◽  
Interface Region ◽  
Radiation Environment ◽  
Solid Phase Epitaxy ◽  
Defect Reduction ◽  
Radiation Induced

AbstractSubstantial reduction of defect density in silicon-on-sapphire (SOS) material is required to broaden its range of applications to include CMOS and bipolar devices. In recent years, solid phase epitaxy and regrowth (SPEAR) and double solid phase epitaxy (DSPE) processes were applied to SOS to reduce the density of defects in the silicon. These methods result in improved carrier mobilities, but also in increased leakage current, even before irradiation. In a radiation environment, this material has a large increase in radiation induced back channel leakage current as compared to standard wafers. In other words, the radiation hardness quality of the SOS declines when the crystalline quality of the Si near the sapphire interface is improved.In this paper, we will demonstrate that Ge implantation, rather than Si implantation normally employed in DSPE and SPEAR processes, is an efficient and more effective way to reduce the density of defects near the surface silicon region without improving the Si/sapphire interface region. Ge implantation may be used to engineer defects in the Si/sapphire interface region to eliminate back channel leakage problems.

scholarly journals Microbial water quality of treated water and raw water sources in the Harare area, Zimbabwe

Water SA ◽  
2015 ◽  
Vol 41 (5) ◽  
pp. 691
Author(s):  
Tatenda G Chirenda ◽  
Sunitha C Srinivas ◽  
R Tandlich
Keyword(s):  
Water Quality ◽  
Water Sources ◽  
Raw Water ◽  
Microbial Water Quality ◽  
Treated Water

Iridium Silicides Formation on High Doses Ge+ Implanted Si Layers

1995 ◽  
Vol 402 ◽  
Author(s):  
G. Curello ◽  
R. Gwilliam ◽  
M. Harry ◽  
R. J. Wilson ◽  
B. J. Sealy ◽  
...  
Keyword(s):  
Low Dose ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Sige Layer ◽  
Thermal Reaction ◽  
High Dose ◽  
Cross Sectional ◽  
Projected Range

AbstractIn this work iridium silicidation of high dose Ge+ implanted Si layers has been studied. Compositional graded SiGe layers with a Ge peak concentration between 6 at.% and 12 at.% have been fabricated using 200 keV Ge+ ion implantation into (100) Si. A 20 nm thick Ir film was then deposited by e-beam evaporation with thermal reaction being performed to both regrow the implantation damage and form the silicide. The crystal quality of the SiGe layer and its interaction with the Ir film have been studied by cross-sectional Transmission Electron Microscopy (XTEM) and Rutherford Backscattering Spectrometry (RBS).Solid Phase Epitaxial Growth (SPEG) in the low dose case has produced a defect free SiGe layer with the formation of the IrSi phase. The annealing ambient was found to be critical for the silicidation. For the high dose case, as expected, strain relaxation related defects were observed to nucleate at a depth close to the projected range of the Ge+ implant and to extend up to the surface. A second rapid thermal annealing at higher temperatures, performed in forming gas, consumed most of the defective layer moving the silicide interface closer to the peak of the Ge distribution. A second low dose Ge+ implant following the metal deposition has been found to have a beneficial effect on the quality of the final interface. An amorphizing 500 keV Si+ implant followed by SPEG has finally been used to move the end of range defects far from the interface.

scholarly journals Treatment of poultry slaughterhouse wastewater with combined system

10.5219/1147 ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 706-712 ◽  
Author(s):  
Kulyash Meiramkulova ◽  
Mikhail Zhumagulov ◽  
Gulnur Saspugayeva ◽  
Zhanar Jakupova ◽  
Мaral Mussimkhan
Keyword(s):  
Removal Efficiency ◽  
Technical Equipment ◽  
Poultry Industry ◽  
Combined System ◽  
Slaughterhouse Wastewater ◽  
Treated Water ◽  
Poultry Products ◽  
Wastewater Samples

With the interest to reuse and recycle the wastewater for technological use, this project aims to test the treatment of wastewater from poultry slaughterhouse industry from three main sections of the poultry slaughtering process, defeathering, eviscerating and cooling processes. The samples for the project were obtained from Izhevskoe a Kazakhstani company. The technology used is a combination of electrocoagulation, ultrafiltration, and photochemical system and its goal is to provide treated water that can be re-utilized in the poultry industry for sterilization of technical equipment without contaminating and affecting the quality of the poultry products. The treatment of wastewater samples lasted in total for 40 min. From the results, it was found that indicators such as BOD, COD, and phosphates had removal efficiency of almost 100%, while the microbiological colonies were all eradicated from then wastewater making the treated water microbes free. Hence, proving this system to be effective for the treatment of poultry slaughterhouse wastewater and safe for technological reutilization.

Experimental and modeling evaluation of upward and downward velocities in the coaxial flotation column

2001 ◽  
Vol 43 (8) ◽  
pp. 195-201 ◽  
Author(s):  
K. Park ◽  
J.-M. Cho ◽  
J. Oh ◽  
K. Chung
Keyword(s):  
Removal Efficiency ◽  
Pilot Scale ◽  
Coaxial Cylinder ◽  
Treated Water ◽  
Flotation Column ◽  
Solids Loading ◽  
Solids Concentration ◽  
Upward Velocity ◽  
Solids Removal

This study was conducted to show the influence of upward velocity in the inner column and downward velocity in the outer column of the coaxial cylinder-type flotation column on the solids removal efficiency, solids concentration in the treated water, and so on. The SIMPLE (Semi-Implicit Method for Pressure Linked Equation) solution was applied to the coaxial flotation column to simulate the velocity vectors of the elements of water flowing in the column. The effects of solids loading and residence time in the agglomerate separation zone on the solids removal efficiency were also tested. In the pilot scale coaxial DAF column experiments with solids concentration of 1,000–2,000 mg of SS per liter and solids loading less than 350 kg/m2/day, approximately 90% of the solids removal efficiencies were obtained using the upward velocity of up to 110 cm/min in the contact zone of the inner column and the downward velocity of up to 30 cm/min in the outer column. In the simulation, similar results were observed as in the experiments. The solids loading in the excess of 350 kg/m2/day caused the instability of the sludge float layer and aggravated the quality of the treated water.

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