Chemical vapor deposition was used to deposit thin films of nickel oxide
(NiO) and iron oxide (Fe2O3) on silicon substrates. Precursors chosen for
this process were nickelocene,Ni(C5H5)2 and n-butylferrocene,
Fe(C5H4C4H9)(C5H5), which were oxidized with oxygen gas in a low-pressure
chemical vapor deposition system. Following the deposition of the individual
metal oxides, the two precursors were used together with the goal of
depositing a thin film of nickel ferrite (NiFe2O4). Both co-deposition and
cyclic deposition were carried out, and the resulting thin films were
analyzed using x-ray photoelectron spectroscopy. This study found that the
resulting thin films did not contain NiFe2O4, but were composed of NiO and
Fe2O3 in a different ratio. It is suggested that changing various parameters
in this experiment can be used to vary this ratio.
Chemical Vapor Deposition of Cobalt and Nickel Ferrite Thin Films: Investigation of Structure and Pseudocapacitive Properties