A Comprehensive Study of Thermal Stability on Microstructure and Residual Stress for ALD HfZrO2 Dielectric Films at 28nm HKMG CMOS Applications

A comprehensive study of thermally treated polyaniline in its emeraldine salt form is presented here. It offers an understanding of the thermal stability of the polymer. Emeraldine salt was prepared by a novel emulsion polymerization pathway using dodecylbenzene sulfonic acid and sulfuric acid together as dopants. The effect of temperature and heating rate on the degradation of this emeraldine salt was studied via thermogravimetric analysis. The thermally analyzed sample was collected at various temperatures, that is, 250, 490, 500, and 1000°C. The gradual changes in the structure of the emeraldine salt were followed through cyclic voltammetry, Fourier transform infrared spectroscopy, and ultraviolet-visible spectroscopy. Results demonstrate that emeraldine salt shows high thermal stability up to 500°C. This is much higher working temperature for the use of emeraldine salt in higher temperature applications. Further heat treatment seems to induce deprotonation in emeraldine salt. Cyclic voltammetry and ultraviolet-visible spectroscopy revealed that complete deprotonation takes place at 1000°C where it loses its electrical conductivity. It is interesting to note that after the elimination of the dopants, the basic backbone of emeraldine salt was not destroyed. The results reveal that the dopants employed have a stability effect on the skeleton of emeraldine salt.

Download Full-text

The effect of blocking layer of Al2O3 on thermal stability and electrical properties of HfO2 dielectric films deposited on SiGe layer

Microelectronic Engineering ◽

10.1016/j.mee.2008.06.008 ◽

2008 ◽

Vol 85 (9) ◽

pp. 1888-1891 ◽

Cited By ~ 2

Author(s):

Xinhong Cheng ◽

Dawei He ◽

Zhaorui Song ◽

Yuehui Yu ◽

DaShen Shen

Keyword(s):

Thermal Stability ◽

Electrical Properties ◽

Sige Layer ◽

Dielectric Films ◽

Blocking Layer

Download Full-text

FE Predictions of Temperature Distributions in a Multipass Welded Piping Branch Junction

High Pressure Technology: Innovations and Advances in High Pressure Technology; 12th Annual ASME/PVPD 2004 Student Paper Competition ◽

10.1115/pvp2004-2283 ◽

2004 ◽

Cited By ~ 1

Author(s):

Wei Jiang ◽

Kadda Yahiaoui ◽

Chang J. Wang ◽

Frank R. Hall ◽

Tahar Laoui

Keyword(s):

Residual Stress ◽

Welding Process ◽

Stress Distributions ◽

Temperature Dependent ◽

Material Microstructure ◽

Temperature Distributions ◽

Control Schemes ◽

Complex Temperature ◽

Walled Cylinder ◽

Comprehensive Study

This contribution deals with the complex temperature profiles that are generated by the welding process in the intersection region of thick walled, cylinder-cylinder junctions. These affect material microstructure, mechanical properties and residual stresses. Knowledge of the thermal history and temperature distributions are thus critical in developing control schemes for acceptable residual stress distributions to improve in-service component behavior. A comprehensive study of 3D temperature distributions in a stainless steel tee branch junction during a multipass welding process is presented. A newly developed partitioning technique has been used to mesh the complex intersection areas of the welded junction. Various phenomena associated with welding, such as temperature dependent material properties, heat loss by convection and latent heat have been taken into consideration. The temperature distribution at various times after deposition of certain passes and the thermal cycles at various locations are reported. The results obtained in this study will be used for on-going and future analysis of residual stress distributions. The meshing technique and modeling method can also be applied to other curved, multipass welds in complex structures.

Download Full-text

Residual Stress Measurements on Cr/Ni Pads Evaporated on Polyimide Thin Films

Advances in X-ray Analysis ◽

10.1154/s0376030800018802 ◽

1992 ◽

Vol 36 ◽

pp. 203-212

Author(s):

C. C. Goldsmith ◽

C. Van Buskirk

Keyword(s):

Residual Stress ◽

Residual Stresses ◽

Thermal Processing ◽

Polyimide Film ◽

Metal Films ◽

Dielectric Films ◽

Nickel Layer ◽

Polyimide Films ◽

Layer Structures ◽

Deposited Metal

AbstractPolyimide films are becoming more important in multi-layer structures, acting as dielectric films to separate conductive layers. High thin film residual stresses can cause problems with the polyimide film, leading to loss of adhesion between the metal film and the polyimide or can cause cracking in the polyimide.In this paper, we examine the residual stresses in “as deposited” metal films evaporated onto BTDA-APB polyimide films and follow the change in residual stress of the nickel layer during subsequent thermal processing. We will show that the change in residual stresses can be correlated to the glass transition temperature of the polyimide film.

Download Full-text

Research on some Key Mechanical Properties of Silicon Nitride Thin Films Deposited by PECVD

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.742.773 ◽

2015 ◽

Vol 742 ◽

pp. 773-777

Author(s):

Qun Feng Yang ◽

Jian Yi Zheng ◽

Jun Qing Wang ◽

Jun Hui Lin ◽

Xue Nan Zhao ◽

...

Keyword(s):

Thin Films ◽

Mechanical Properties ◽

Residual Stress ◽

Silicon Nitride ◽

Mechanical Characteristics ◽

Dielectric Films ◽

Rotating Beam ◽

Atomic Force ◽

Scanning Electron

The purpose of this work is to study the mechanical characteristics of the silicon nitride(SiNx) thin films prepared by PECVD technique, some researches as follows were carried out. First, the SiNx thin films were deposited on the two different substrates. Then, the atomic force microscope (AFM) was adopted to test the surface quality of the SiNxfilms, and the scanning electron microscope (SEM) was used to test the section morphology of the SiNxthin films. Finally, the rotating beam structures was applied to measure the residual stress in the SiNx films. The SiNxthin films with low stress can be fabricated through PECVD, in which the surface roughness values(Ra) are 1.261 nm and 2.383nm, and the residual stress is 43.5 kPa. Therefore, the SiNxthin films deposited by PECVD are suitable for the preparation of device dielectric films in MEMS.

Download Full-text