Investigation of Thin Film Properties of SiCN:H deposited by ECR PECVD with Acetylene and Ethane Hydrocarbon Sources

Enhancement of photon absorption on barium strontium titanate (BaxSr1-xTiO3) thin-film semiconductor for mole fractionx=0.25, 0.35, 0.45, and 0.55 using one-dimensional photonic crystal with defect was investigated experimentally. The thin film was grown on transparent conductive oxide (TCO) substrate using chemical solution deposition method and annealed at 500°C for 15 hours with increasing rate of 1.6°C/min. From optical characterization in visible spectrum it was found that the average absorption percentages are 92.04%, 83.55%, 91.16%, and 80.12%, respectively. The BST thin film with embedded photonic crystal exhibited a relatively significant enhancement on photon absorption, with increasing value of 3.96%, 7.07%, 3.04%, and 13.33% for the respective mole fraction and demonstrating absorbance characteristic with flat feature. In addition, we also discuss the thin-film properties of attenuation constant and electrical conductivity.

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A novel technique for in situ measurements of thin film properties

Thin Solid Films ◽

10.1016/0040-6090(85)90302-5 ◽

1985 ◽

Vol 130 (1-2) ◽

pp. 125-134 ◽

Cited By ~ 2

Author(s):

K. Hieber

Keyword(s):

Thin Film ◽

In Situ Measurements ◽

Film Properties ◽

Novel Technique

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Quantitative determination of dielectric thin-film properties on product wafers using infrared reflection-absorption spectroscopy

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581508 ◽

1998 ◽

Vol 16 (6) ◽

pp. 3490-3494 ◽

Cited By ~ 6

Author(s):

Thomas M. Niemczyk ◽

Lizhong Zhang ◽

David M. Haaland ◽

Kenneth J. Radigan

Keyword(s):

Thin Film ◽

Quantitative Determination ◽

Absorption Spectroscopy ◽

Film Properties ◽

Dielectric Thin Film ◽

Infrared Reflection Absorption Spectroscopy ◽

Infrared Reflection

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Effect of deposition pressure and post deposition annealing on SmCo thin film properties

physica status solidi (c) ◽

10.1002/pssc.200780177 ◽

2008 ◽

Vol 5 (12) ◽

pp. 3759-3762 ◽

Cited By ~ 3

Author(s):

Th. Speliotis ◽

E. Makarona ◽

F. Chouliaras ◽

C. A. Charitidis ◽

C. Tsamis ◽

...

Keyword(s):

Thin Film ◽

Deposition Pressure ◽

Post Deposition Annealing ◽

Film Properties ◽

Post Deposition

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Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics

Thin Solid Films ◽

10.1016/j.tsf.2011.04.205 ◽

2011 ◽

Vol 520 (4) ◽

pp. 1246-1250 ◽

Cited By ~ 20

Author(s):

Kou-Chen Liu ◽

Wen-Hsien Tzeng ◽

Kow-Ming Chang ◽

Jiun-Jie Huang ◽

Yun-Ju Lee ◽

...

Keyword(s):

Thin Film ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Resistive Switching ◽

Film Properties ◽

Switching Characteristics

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Modeling, Simulation and Control of Single Wafer Process in Cluster Tool Base on Ft-Ir In-Line Sensor

MRS Proceedings ◽

10.1557/proc-389-269 ◽

1995 ◽

Vol 389 ◽

Cited By ~ 1

Author(s):

Shaohua Liu ◽

Peter Solomon ◽

R. Carpio ◽

B. Fowler ◽

D. Simmons ◽

...

Keyword(s):

Thin Film ◽

Semiconductor Industry ◽

Current Approach ◽

Infrared Reflectance ◽

Film Properties ◽

Reflectance Measurement ◽

Infrared Spectrometer ◽

Ft Ir ◽

And Control ◽

Cluster Tool

ABSTRACTThis paper outlines our current approach to utilize infrared reflectance spectroscopy for thin film measurement in the semiconductor industry. The multi-layer thickness and doping concentration of IC wafers can be determined by a single angle, unpolarized infrared reflectance measurement performed using Fourier transform infrared spectrometer. A computer algorithm, which matches theoretical to measured infrared reflectance spectra, was successfully employed to determine multiple thin film properties.

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