D123 Strain Effects in Thin Film / SI Substrates Revealed by X-ray Microdiffraction

2003 ◽  
Vol 18 (2) ◽  
pp. 176-176
Author(s):  
C. E. Murray ◽  
I. C. Noyan ◽  
B. Lai ◽  
Z. Cai
Keyword(s):  
X Ray ◽  
MRS Advances ◽  
2019 ◽  
Vol 4 (25-26) ◽  
pp. 1435-1440
Author(s):  
Azin Akbari ◽  
T. John Balk

In order to identify candidate high entropy alloys (HEAs) that have the hexagonal closed packed crystal structure, gradient thin films in the OsRuWMoRe system were deposited by sputtering from multiple elemental targets onto Si substrates. In addition to having compositional gradients, the films exhibited regions with different phases, some of which were single-phase and non-equiatomic. Such alloys have the potential to exhibit properties superior to the primarily equiatomic HEAs that have been the focus of most work in this area. To screen the phases that exist across the thin film gradient samples, a range of characterization techniques were employed, including focused ion beam and scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray diffraction and electron backscattered diffraction analysis. The combinatorial method described in this study enabled the identification of a candidate single-phase HEA that was subsequently fabricated as a bulk alloy.


2002 ◽  
Vol 716 ◽  
Author(s):  
V.K. Egorov ◽  
E.V. Egorov

AbstractExperimental research of the first composite planar X-ray waveguide-resonator (CPXWR) is presented. Model for an X-ray beam penetration across CPXWR is proposed. The model shows that the experimental data can be interpreted as the effect of the X-ray beam angle tunneling across small gap between two waveguide-resonators aligned consecutive. The assumption been made that the effect may open the key for the mechanism understanding of a hard electromagnetic radiation beam's management. Possibilities of the CPXWR practical using for creation of the X-ray new generation equipment for testing of thin film coating on Si substrates are discussed.


2004 ◽  
Vol 19 (1) ◽  
pp. 56-59
Author(s):  
C. E. Murray ◽  
I. C. Noyan ◽  
B. Lai ◽  
Z. Cai

The local variation in strain and rotation of the Si substrate due to overlying Ni thin film features has been observed using X-ray microdiffraction. Residual tensile stress in 1 μm thick, 190 μm diameter Ni dots of 990 MPa imparted an average compressive stress in the underlying Si substrate. Ni Kα fluorescence scans, acquired simultaneously with Si (333) diffraction data, allow for a precise determination of the Ni feature edge location relative to the observed shift in Si (333) peak position. Rocking curve mesh scans, in which the sample was translated perpendicular and parallel to the diffraction plane, were used to deconvolute the effects of substrate strain due to d-spacing shifts and rotation of the local Si surface. In addition, shear strains at the dot edge imparted a significant shift in the Si (333) diffraction peak, producing a secondary diffraction peak in modified reciprocal space scans.


Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.


Author(s):  
J N Chapman ◽  
W A P Nicholson

Energy dispersive x-ray microanalysis (EDX) is widely used for the quantitative determination of local composition in thin film specimens. Extraction of quantitative data is usually accomplished by relating the ratio of the number of atoms of two species A and B in the volume excited by the electron beam (nA/nB) to the corresponding ratio of detected characteristic photons (NA/NB) through the use of a k-factor. This leads to an expression of the form nA/nB = kAB NA/NB where kAB is a measure of the relative efficiency with which x-rays are generated and detected from the two species.Errors in thin film x-ray quantification can arise from uncertainties in both NA/NB and kAB. In addition to the inevitable statistical errors, particularly severe problems arise in accurately determining the former if (i) mass loss occurs during spectrum acquisition so that the composition changes as irradiation proceeds, (ii) the characteristic peak from one of the minority components of interest is overlapped by the much larger peak from a majority component, (iii) the measured ratio varies significantly with specimen thickness as a result of electron channeling, or (iv) varying absorption corrections are required due to photons generated at different points having to traverse different path lengths through specimens of irregular and unknown topography on their way to the detector.


Author(s):  
Karimat El-Sayed

Lead telluride is an important semiconductor of many applications. Many Investigators showed that there are anamolous descripancies in most of the electrophysical properties of PbTe polycrystalline thin films on annealing. X-Ray and electron diffraction studies are being undertaken in the present work in order to explain the cause of this anamolous behaviour.Figures 1-3 show the electron diffraction of the unheated, heated in air at 100°C and heated in air at 250°C respectively of a 300°A polycrystalline PbTe thin film. It can be seen that Fig. 1 is a typical [100] projection of a face centered cubic with unmixed (hkl) indices. Fig. 2 shows the appearance of faint superlattice reflections having mixed (hkl) indices. Fig. 3 shows the disappearance of thf superlattice reflections and the appearance of polycrystalline PbO phase superimposed on the [l00] PbTe diffraction patterns. The mechanism of this three stage process can be explained on structural basis as follows :


2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.


2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.


Author(s):  
Jonathan Ogle ◽  
Daniel Powell ◽  
Eric Amerling ◽  
Detlef Matthias Smilgies ◽  
Luisa Whittaker-Brooks

<p>Thin film materials have become increasingly complex in morphological and structural design. When characterizing the structure of these films, a crucial field of study is the role that crystallite orientation plays in giving rise to unique electronic properties. It is therefore important to have a comparative tool for understanding differences in crystallite orientation within a thin film, and also the ability to compare the structural orientation between different thin films. Herein, we designed a new method dubbed the mosaicity factor (MF) to quantify crystallite orientation in thin films using grazing incidence wide-angle X-ray scattering (GIWAXS) patterns. This method for quantifying the orientation of thin films overcomes many limitations inherent in previous approaches such as noise sensitivity, the ability to compare orientation distributions along different axes, and the ability to quantify multiple crystallite orientations observed within the same Miller index. Following the presentation of MF, we proceed to discussing case studies to show the efficacy and range of application available for the use of MF. These studies show how using the MF approach yields quantitative orientation information for various materials assembled on a substrate.<b></b></p>


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