D029 X-ray Stress Analysis Method Based on Laue Symmetries for Thin Films

2003 ◽  
Vol 18 (2) ◽  
pp. 178-178
Author(s):  
R. Yokoyama ◽  
J. Harada ◽  
K. Tanaka
2008 ◽  
Vol 92 (23) ◽  
pp. 231903 ◽  
Author(s):  
Muneyuki Imafuku ◽  
Hiroshi Suzuki ◽  
Kazuyuki Sueyoshi ◽  
Koichi Akita ◽  
Shin-ichi Ohya

2002 ◽  
Vol 408-412 ◽  
pp. 1603-1608 ◽  
Author(s):  
Luca Lutterotti ◽  
Siegfried Matthies ◽  
Daniel Chateigner ◽  
Sandro Ferrari ◽  
Jesús Ricote

2011 ◽  
Vol 217-218 ◽  
pp. 1743-1746
Author(s):  
Xing Long Guo

TiO2 with 20nm in diameter have been prepared by using magnetron sputtering technique. The structure of these powers was determined by X-ray diffraction experiments. The average grain size and particle size in these powers were measured by the line profile analysis method of X-ray diffraction patterns and by scan electron microscopy, respectively. The thin films were investigated by using XRD, SEM measurements.


2014 ◽  
Vol 47 (1) ◽  
pp. 291-302 ◽  
Author(s):  
Silke Julia Birgit Kurz ◽  
Udo Welzel ◽  
Ewald Bischoff ◽  
Eric Jan Mittemeijer

The presence of planar faults complicates the diffraction stress analysis enormously owing to fault-induced displacement, broadening and asymmetry of the Bragg reflections. A dedicated stress-analysis method has been developed for highly planar-faulted, fibre-textured thin films of cubic crystal symmetry, using only specific reflections for diffraction stress analysis. The effect of unjustified use of other reflections has been demonstrated in the course of application of the method to Ni and Ni(W) thin films exhibiting excessive faulting and subjected to (1) a planar, rotationally symmetric stress state and (2) a planar biaxial stress state. In case 1 the crystallite-group method has been used, whereas in case 2 the stress-analysis method based on X-ray stress factors had to be applied. The successful separation of stress- and fault-induced reflection displacements has enabled the investigation of the mechanical behaviour of Ni and Ni(W) thin films byin situstress measurements during tensile loading, thereby exposing pronounced stiffness and increased strength by alloying with W.


2014 ◽  
Vol 783-786 ◽  
pp. 2103-2108 ◽  
Author(s):  
Toshihiko Sasaki

Measuring theory of two types of X-ray stress analysis method was compared with each other. One is the conventional method, in which zero-or one-dimensional detector is used for obtaining diffracted beam and stress is determined using the standard sin2ψ method. Another is the new type of X-ray stress analysis method, in which two-dimensional detector is used to obtain whole Debye ring and stress is determined using the cosα method. An experiment was conducted to investigate the validity.


2006 ◽  
Vol 2006 (0) ◽  
pp. 565-566
Author(s):  
Kazuyuki SUEYOSHI ◽  
Hiroshi SUZUKI ◽  
Koichi AKITA ◽  
Muneyuki IMAFUKU ◽  
Shin-ichi OHYA

1988 ◽  
Vol 130 ◽  
Author(s):  
Carla J. Shute ◽  
J. B. Cohen ◽  
D. A. Jeannottea

AbstractResidual stress has been measured as a function of layer thickness in thin films of an Al alloy on oxidized Si by the x-ray “d” versus sin2ψ technique. Samples with and without a passivation layer were examined. The results show an increase in residual stress with decreasing film thickness for the passivated samples and indicates that the interface between the metal film and SiO2 may be a region of high stress.


2006 ◽  
Vol 56 (3) ◽  
pp. 208-213 ◽  
Author(s):  
M. Qin ◽  
D.Y. Ju ◽  
Y.N. Wu ◽  
C. Sun ◽  
J.B. Li

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