Grazing Incidence X-Ray Spectroscopy for Thin Layer Analysis

1991 ◽  
Vol 35 (B) ◽  
pp. 807-812
Author(s):  
Hideki Hashimoto ◽  
Hiroshi Nishioji ◽  
Hideo Saisho
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Synchrotron Radiation ◽  
Grazing Incidence ◽  
High Density ◽  
Homogeneous Layer ◽  
Treatment Results ◽  
Titanium Layer ◽  
X Ray ◽  
Layer Analysis

AbstractReflection and fluorescence intensity profile curves for thin films were measured under the grazing incidence conditions using synchrotron radiation. A titanium layer and a carbon / titanium bilayer sputtered on a silicon wafer were subjected to heat treatment. The analysis of the reflection and fluorescence profile curves shows that the sample without the heat treatment has another high-density layer on the surface or interface, and that the heat treatment results in the removal of the high-density layer and the formation of a thick homogeneous layer.

Investigation of Thin Coatings from Mn-Co-Fe System Deposited by PVD on Metallic Interconnects for SOFC Applications

2008 ◽  
Vol 595-598 ◽  
pp. 797-804 ◽  
Author(s):  
Cezarina C. Mardare ◽  
Michael Spiegel ◽  
Alan Savan ◽  
Alfred Ludwig
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Profile Analysis ◽  
Protective Coatings ◽  
Depth Profiling ◽  
Grazing Incidence ◽  
Metallic Thin Films ◽  
X Ray ◽  
Secondary Ions ◽  
The Stability

Ternary Mn-Co-Fe metallic thin films were deposited by RF-magnetron co-sputtering on SiO2/Si wafers and on ZMG232L (Hitachi Metals®), a special ferritic stainless steel for Solid Oxide Fuel Cell applications. The deposition was followed by heat treatment in an oxidizing atmosphere in order to convert the metallic thin films to (Mn,Co,Fe)3O4 spinel oxides. Coated and uncoated steel samples were analyzed after 1 h heat treatment in order to confirm the presence of the spinel structure on top of the steel, as well as to investigate and characterize the growth of oxides, namely (Mn,Cr)3O4 and Cr2O3, at the internal steel/coating interface. From Grazing Incidence X-ray Diffraction (GI-XRD) investigations together with Energy Dispersive X-ray analysis – Scanning Electron Microscopy and Time of Flight – Secondary Ions Mass Spectroscopy sputtering depth profiling the presence of well adherent (Mn,Co,Fe)3O4 coatings with approximately 500 nm thickness and a grain size of about 150 nm was confirmed. After the preparation annealing, some samples were heat-treated in simulated cathodic atmospheres at 800 °C for 500 h in order to assess the stability of the coatings. GI-XRD spectra still showed the presence of the protective coatings, however sputtering depth profile analysis indicated the presence of Cr on the surface.

Alteration of internal stresses in SiO2/Cu/TiN thin films by X-ray and synchrotron radiation due to heat treatment

Vacuum ◽  
2006 ◽  
Vol 80 (7) ◽  
pp. 836-839 ◽  
Author(s):  
Tatsuya Matsue ◽  
Takao Hanabusa ◽  
Yasukazu Ikeuchi ◽  
Kazuya Kusaka ◽  
Osami Sakata
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Synchrotron Radiation ◽  
Internal Stresses ◽  
X Ray ◽  
Tin Thin Films

Opportunities for Materials Analysis with Next Generation Synchrotron Sources

1991 ◽  
Vol 35 (A) ◽  
pp. 329-332
Author(s):  
Michael Hart
Keyword(s):  
Thin Films ◽  
Synchrotron Radiation ◽  
Materials Science ◽  
Grazing Incidence ◽  
Third Generation ◽  
New Techniques ◽  
Materials Analysis ◽  
X Ray ◽  
Radiation Sources ◽  
Radiation Laboratory

AbstractPolycrystalline and powder diffraction is the most commonly practised method of x-ray analysis. During the last decade the construction of dedicated synchrotron radiation sources has resulted in the renaissance of these x-ray analysis methods; ab initio structure analysis and refinement, quantitative analysis of the structure, composition and stress in thin films and on surfaces, have all been improved. New techniques providing extremely high resolution, using anomalous dispersion, diffraction and scattering at grazing incidence to control x-ray penetration depth, have been developed. This brief review of work with W. Parrish at Stanford Synchrotron Radiation Laboratory and R. J. Cernik at the Daresbury Synchrotron Radiation Source is extended to indicate how third generation sources might be exploited in materials science.

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

Quantifying Multiple Crystallite Orientations and Crystal Heterogeneities in Complex Thin Film Materials

2019 ◽  
Author(s):  
Jonathan Ogle ◽  
Daniel Powell ◽  
Eric Amerling ◽  
Detlef Matthias Smilgies ◽  
Luisa Whittaker-Brooks
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Design ◽  
Grazing Incidence ◽  
Crystallite Orientation ◽  
Miller Index ◽  
X Ray ◽  
X Ray Scattering ◽  
Orientation Distributions ◽  
Orientation Information

<p>Thin film materials have become increasingly complex in morphological and structural design. When characterizing the structure of these films, a crucial field of study is the role that crystallite orientation plays in giving rise to unique electronic properties. It is therefore important to have a comparative tool for understanding differences in crystallite orientation within a thin film, and also the ability to compare the structural orientation between different thin films. Herein, we designed a new method dubbed the mosaicity factor (MF) to quantify crystallite orientation in thin films using grazing incidence wide-angle X-ray scattering (GIWAXS) patterns. This method for quantifying the orientation of thin films overcomes many limitations inherent in previous approaches such as noise sensitivity, the ability to compare orientation distributions along different axes, and the ability to quantify multiple crystallite orientations observed within the same Miller index. Following the presentation of MF, we proceed to discussing case studies to show the efficacy and range of application available for the use of MF. These studies show how using the MF approach yields quantitative orientation information for various materials assembled on a substrate.<b></b></p>

Evolution of Interfacial Roughness Correlations of Fe Au Films Grown on Mgo(001) Substrates

1996 ◽  
Vol 440 ◽  
Author(s):  
P. C. Chow ◽  
R. Paniago ◽  
R. Forrest ◽  
S. C. Moss ◽  
S. S. P. Parkin ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffuse Scattering ◽  
Perfect Match ◽  
Grazing Incidence ◽  
Interface Roughness ◽  
Metallic Structures ◽  
X Ray ◽  
Dimensional Image ◽  
X Ray Scattering ◽  
Image Plate Detector

AbstractThe growth by sputtering of a series of thin films of Fe/Au on MgO(001) substrates was analyzed using Bragg and diffuse X-ray scattering. The Fe (bcc) layer grows rotated by 45° with respect to the MgO – Au(fcc) (001) epitaxial orientation, resulting in an almost perfect match between the two metallic structures. By collecting the X-ray diffuse scattering under grazing incidence using a 2-dimensional image plate detector, we mapped the reciprocal space of these films. We characterized the correlated interface roughness starting with a buffer of Fe in which only three interfaces are present. The propagation of the roughness was subsequently characterized for Fe/Au multilayers with 40 and 100 bilayers. We observe an enlargement of the surface features as a function of time, evidenced by the longer lateral cutoff length measured for thicker films.

Determining the C60 molecular arrangement in thin films by means of X-ray diffraction

2011 ◽  
Vol 44 (5) ◽  
pp. 983-990 ◽  
Author(s):  
Chris Elschner ◽  
Alexandr A. Levin ◽  
Lutz Wilde ◽  
Jörg Grenzer ◽  
Christian Schroer ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Information ◽  
Grazing Incidence ◽  
Test Material ◽  
C60 Fullerene ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Arrangement ◽  
Diffraction Patterns

The electrical and optical properties of molecular thin films are widely used, for instance in organic electronics, and depend strongly on the molecular arrangement of the organic layers. It is shown here how atomic structural information can be obtained from molecular films without further knowledge of the single-crystal structure. C60 fullerene was chosen as a representative test material. A 250 nm C60 film was investigated by grazing-incidence X-ray diffraction and the data compared with a Bragg–Brentano X-ray diffraction measurement of the corresponding C60 powder. The diffraction patterns of both powder and film were used to calculate the pair distribution function (PDF), which allowed an investigation of the short-range order of the structures. With the help of the PDF, a structure model for the C60 molecular arrangement was determined for both C60 powder and thin film. The results agree very well with a classical whole-pattern fitting approach for the C60 diffraction patterns.

Sign in / Sign up

Export Citation Format

Share Document