scholarly journals Spectroscopic Characterization of Electrodeposited Poly(o-toluidine) Thin Films and Electrical Properties of ITO/Poly(o-toluidine)/Aluminum Schottky Diodes

2007 ◽  
Vol 2007 ◽  
pp. 1-7 ◽  
Author(s):  
A. Elmansouri ◽  
A. Outzourhit ◽  
A. Oueriagli ◽  
A. Lachkar ◽  
N. Hadik ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrochemical Polymerization ◽  
Schottky Diodes ◽  
Supporting Electrolyte ◽  
Spectroscopic Characterization ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Deposited Films ◽  
Ft Raman

Poly(o-toluidine) (POT) thin films were synthesized by electrochemical polymerization under cyclic voltammetric conditions from o-toluidine monomer in an aqueous solution of HCl as a supporting electrolyte. The electrosynthesized films were characterized by UV-Visible, FT-Raman, and FTIR spectroscopies. The optical transmissions of the as-deposited films were measured in the 400–900 nm wavelength range. These measurements showed that the optical band gap of the polymer films is in the order of 2.52 eV. The FT-Raman and FTIR measurements showed that the POT film is composed of imine and amine units. ITO/POT/Al devices were fabricated by thermal evaporation of aluminum circular contacts on films deposited on ITO-coated glass. The nonlinear current-voltage characteristics of these devices indicate a rectifying behavior. The diode parameters were calculated from I-V characteristics using the modified Shockley equation. The measured C-V and C-F characteristics are presented.

scholarly journals Schottky Diodes and Thin Films Based on Copolymer: Poly(aniline-co-toluidine)

2009 ◽  
Vol 2009 ◽  
pp. 1-5 ◽  
Author(s):  
A. Elmansouri ◽  
N. Hadik ◽  
A. Outzourhit ◽  
A. Lachkar ◽  
A. Abouelaoualim ◽  
...  
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Electrochemical Polymerization ◽  
Schottky Diodes ◽  
Supporting Electrolyte ◽  
Glass Substrates ◽  
Copolymer Films ◽  
Current Voltage ◽  
Copolymer Poly ◽  
Poly Aniline

Poly(aniline-co-o-toluidine) (PANI-co-POT) thin films were deposited on indium tin oxide- (ITO-) coated glass substrates by electrochemical polymerization under cyclic voltammetric conditions from aniline-co-o-toluidine monomer in an aqueous solution of HCl as a supporting electrolyte. These measurements showed that the optical band gap of the copolymer films is on the order of 2.65 eV. On the other hand, ITO/PANI-co-POT/Al devices were fabricated by thermal evaporation of Aluminum circular electrodes on the as-deposited PANI-co-POT films. The Current-Voltage characteristics of these devices are nonlinear. The diode parameters were calculated from I-V characteristics using the modified Shockley equation. The C-F characteristics were also measured.

scholarly journals Growth and Characterization of CuO Nanostructures on Si for the Fabrication of CuO/p-Si Schottky Diodes

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
S. Çetinkaya ◽  
H. A. Çetinkara ◽  
F. Bayansal ◽  
S. Kahraman
Keyword(s):  
Schottky Diodes ◽  
Sol Gel ◽  
Sem Images ◽  
Gel Method ◽  
Sol Gel Method ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Cbd Method ◽  
Xrd Techniques

CuO interlayers in the CuO/p-Si Schottky diodes were fabricated by using CBD and sol-gel methods. Deposited CuO layers were characterized by SEM and XRD techniques. From the SEM images, it was seen that the film grown by CBD method is denser than the film grown by sol-gel method. This result is compatible with XRD results which show that the crystallization in CBD method is higher than it is in sol-gel method. For the electrical investigations, current-voltage characteristics of the diodes have been studied at room temperature. ConventionalI-Vand Norde’s methods were used in order to determine the ideality factor, barrier height, and series resistance values. It was seen that the morphological and structural analysis are compatible with the results of electrical investigations.

scholarly journals Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy

2008 ◽  
Vol 600-603 ◽  
pp. 967-970 ◽  
Author(s):  
Mitsutaka Nakamura ◽  
Yoshikazu Hashino ◽  
Tomoaki Furusho ◽  
Hiroyuki Kinoshita ◽  
Hiromu Shiomi ◽  
...  
Keyword(s):  
Ideality Factor ◽  
Basal Plane ◽  
Reverse Bias ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Bias Current ◽  
Device Performance ◽  
Current Voltage ◽  
Current Voltage Characteristics

The effects of basal-plane defects on the performance of 4H-SiC Schottky diodes using a Ni electrode are demonstrated. Systematic characterization was performed using 4H-SiC epitaxial layers grown by sublimation epitaxy on substrates with various off-axis angles. As the off-axis angle increases, the ideality factor of the current-voltage characteristics increases, and the Schottky barrier height decreases, corresponding to an increase in the number of basal-plane defects. The reverse-bias current degrades for high off-axis samples. These results indicate that basal-plane defects degrade the device performance. Schottky diodes that possesses good characteristics were obtained for samples with low off-axis angles (2o- and 4o-off samples).

Formation and Spectroelectrochemical Characterization of Multilayer and Submonolayer Thin Films of 2,3,9,10,16,17,23,24-Octa(2-benzyloxy-ethoxy) Phthalocyninato Copper (CuPc(OC2OBz)8)

1999 ◽  
Vol 03 (07) ◽  
pp. 620-633 ◽  
Author(s):  
P. E. SMOLENYAK ◽  
R. A. PETERSON ◽  
D. R. DUNPHY ◽  
S. MENDES ◽  
K. W. NEBESNY ◽  
...  
Keyword(s):  
Thin Films ◽  
Self Assembly ◽  
Supporting Electrolyte ◽  
Spectroscopic Characterization ◽  
Multilayer Thin Films ◽  
Onset Potential ◽  
Optic Waveguide ◽  
High Degree

We review here the self-assembly, electrochemical and spectroelectrochemical properties of 2,3,9,10,16,17,23,24-octa(2-benzyloxyethoxy) phthalocyaninato copper ( CuPc ( OC 2 OBz )8), where terminal benzyl groups on the eight ethylene oxide side chains assist in forming unusually ordered, mechanically rigid thin films. New spectroscopic characterization of cast CuPc ( OC 2 OBz )8 films is discussed in comparison with cast films of its metal-free analogue H 2 Pc ( OC 2 OBz )8 and similar copper and dihydrogen phthalocyanines with benzyl — terminated triethylene oxide substituents, CuPc (( OC 2 O )3 Bz )8, and H 2 Pc (( OC 2 O )3 Bz )8, which do not demonstrate the same degree of ordering as CuPc ( OC 2 OBz )8. AFM studies of horizontally transferred LB films of CuPc ( OC 2 OBz )8 show column–column distances of ca 2.8 nm and confirm the high degree of ordering previously surmised from spectroscopic characterization of multilayer thin films. The oxidative electrochemistry of multilayer thin films prepared from these Pcs is strongly dependent on the chemical identity of the supporting electrolyte anion and on annealing of the thin films. Compliance of the films to counter-ion transport limits the extent of electrochemical doping. Preliminary studies of the oxidative electrochemistry of isolated CuPc ( OC 2 OBz )8 aggregates (diluted into an electroinactive methyl arachidate thin film) on an electroactive, integrated optic waveguide (EA-IOW) are also presented. Monitoring the change in absorbance at 633 nm on the waveguide surface allows the determination of the onset potential for oxidation of the isolated aggregates, which appears to be less positive in potential versus that observed for multilayer Pc assemblies.

Characterization of Thin PtSI/p-Si Schottky Diodes

1985 ◽  
Vol 54 ◽  
Author(s):  
J. Silverman ◽  
P. Pellegrini ◽  
J. Comer ◽  
A. Golvbovic ◽  
M. Weeks ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Electrical Current ◽  
Processing Parameters ◽  
Silicon Substrates ◽  
Unexpected Result ◽  
State Diffusion ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

ABSTRACTA series of PtSi on p-type Si diodes have been characterized in order to establish correlations among processing parameters, metallurgical features and electrical properties. Characterization techniques include analytical (TED, TEM), electrical (current-voltage characteristics), and optical (photoemission and absorption). The fabrication techniques involve e-beam evaporation of platinum layers at UHV levels onto VLSI grade (100) p-type silicon substrates. The silicide layers are formed via sub-eutectic solid state diffusion at 350°C. The main trends with thickness as well as possible interrelationships are described. An unexpected result is the presence of unreacted polycrystalline Pt and Pt2Si at the interface.

Current–Voltage Characterization of Transparent ITO/ZnO:B/ZnO:(Al + In)/Ag Schottky Diodes Prepared with Multilayer Films by Sol–Gel Deposition

2019 ◽  
Vol 49 (3) ◽  
pp. 1993-2002
Author(s):  
Manuel A. Hernández-Ochoa ◽  
Humberto Arizpe-Chávez ◽  
Rafael Ramírez-Bon ◽  
Alain Pérez-Rodríguez ◽  
Manuel Cortez-Valadez ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Sol Gel ◽  
Multilayer Films ◽  
Current Voltage

Preparation and Electrical Characteristics of (100), (111), and Randomly Oriented PZT Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Chang Jung Kim ◽  
Dae Sung Yoon ◽  
Joon Sung Lee ◽  
Chaun Gi Choi ◽  
Won Jong Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Test System ◽  
Electrical Characteristics ◽  
Pzt Thin Films ◽  
Pole Figures ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Drying Conditions

ABSTRACTThe (100), (111) and randomly oriented PZT thin films were fabricated on Pt/Ti/Coming 7059 glass using sol-gel method. The thin films having different orientation were fabricated by different drying conditions for pyrolysis. The preferred orientations of the PZT thin films were observed using XRD, rocking curves, and pole figures. The microstructures were investigated using SEM. The hysteresis loops and capacitance-voltage characteristics of the films were investigated using a standardized ferroelectric test system. The dielectric constant and current-voltage characteristics of the films were investigated using an impedance analyzer and pA meter, respectively. The films oriented in a particular direction showed superior electrical characteristics to the randomly oriented films.

Photoconductivity of Nanocomposite MEH-PPV: TiO2 Thin Films

2011 ◽  
Vol 13 ◽  
pp. 87-92 ◽  
Author(s):  
M.S.P Sarah ◽  
F.S. Zahid ◽  
M.Z. Musa ◽  
U.M. Noor ◽  
Z. Shaameri ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Spin Coating ◽  
Glass Substrate ◽  
Spin Coating Technique ◽  
Coating Technique ◽  
Current Voltage ◽  
Current Voltage Characteristics

The photoconductivity of a nanocomposite MEH-PPV:TiO2 thin film is investigated. The nanocomposite MEH-PPV:TiO2 thin film was deposited on a glass substrate by spin coating technique. The composition of the TiO2 powder was varied from 5 wt% to 20 wt% (with 5 wt% interval). The concentration of the MEH-PPV is given by 1 mg/1 ml. The current voltage characteristics were measured in dark and under illumination. The photoconductivity showed increment in value as the composition of the TiO2 is raised in the polymer based solution. The absorption showed augmentation as the amount of TiO2 is increased. The escalation of the current voltage is then supported by the results of surface morphology.

The electrical characterization of Ag/PTCDA/PEDOT:PSS/p-Si Schottky diode by current–voltage characteristics

2013 ◽  
Vol 415 ◽  
pp. 77-81 ◽  
Author(s):  
Muhammad Tahir ◽  
Muhammad Hassan Sayyad ◽  
Fazal Wahab ◽  
Dil Nawaz Khan ◽  
Fakhra Aziz
Keyword(s):  
Schottky Diode ◽  
Electrical Characterization ◽  
Current Voltage ◽  
Current Voltage Characteristics
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