scholarly journals Influence of Air Annealing and Gamma Ray Irradiation on the Optical Properties of Cl16FePc Thin Films

2012 ◽  
Vol 9 (4) ◽  
pp. 2439-2445 ◽  
Author(s):  
Raji Koshy ◽  
C. S. Menon
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Absorption Spectrum ◽  
Optical Absorption ◽  
Band Gap ◽  
Gamma Ray ◽  
Optical Transition ◽  
High Electron ◽  
Glass Substrates ◽  
Optical Dielectric Constant

Metal phthalocyanines are one of the most promising candidates to be used in the fabrication of such devices. Among various phthalocyanines, Iron Hexadecachloro Phthalocyanine (Cl16FePc) has received less attention. Basic characteristics of Cl16FePc are not reported in literature. Hexadecacholoro phthalocyanines have attracted interest as possible n-type organic semiconductor with high electron mobility and good stability characteristics. In the present work we investigate the optical band gap of the Cl16FePc thin films from the optical absorption spectrum as a function of air annealing temperatures and their suitability for the fabrication of molecular electronic devices. Some optical properties of the samples were studied as a function of γ-radiation doses also. Optical transition is found to be of direct type and optical band gaps are determined by analyzing the absorption spectrum. Vacuum sublimed thin films of Iron hexadecachloro phthalocyanine were prepared at room temperature onto glass substrates at a base pressure of 10-5Torr on precleaned glass substrates using Hind Hivac 12A4 coating plant. The optical energy band gap Eg were calculated. The mechanism of optical absorption follow the rule of direct transition. In the present paper we also report refractive index, real and imaginary parts of optical dielectric constant etc. from the reflectance measurements.

Deposition time dependent study of structural and optical properties of PbS thin films grown by CBD method

2020 ◽  
Vol 13 ◽  
Author(s):  
Minakshi Chaudhary ◽  
Yogesh Hase ◽  
Ashwini Punde ◽  
Pratibha Shinde ◽  
Ashish Waghmare ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Deposition Time ◽  
Secondary Growth ◽  
Cost Effective ◽  
Xrd Analysis ◽  
Structural Morphology ◽  
Glass Substrates ◽  
Cbd Method

: Thin films of PbS were prepared onto glass substrates by using a simple and cost effective CBD method. Influence of deposition time on structural, morphology and optical properties have been investigated systematically. The XRD analysis revealed that PbS films are polycrystalline with preferred orientation in (200) direction. Enhancement in crystallinity and PbS crystallite size has been observed with increase in deposition time. Formation of single phase PbS thin films has been further confirmed by Raman spectroscopy. The surface morphology analysis revealed the formation of prismatic and pebble-like PbS particles and with increase in deposition time these PbS particles are separated from each other without secondary growth. The data obtained from the EDX spectra shows the formation of high-quality but slightly sulfur rich PbS thin films over the entire range of deposition time studied. All films show increase in absorption with increase in deposition time and a strong absorption in the visible and sub-band gap regime of NIR range of the spectrum with red shift in band edge. The optical band gap shows decreasing trend, as deposition time increases but it is higher than the band gap of bulk PbS.

Properties of CdS Thin Films Grown by Chemical Bath Deposition as a Function of Bath Temperature

2009 ◽  
Vol 609 ◽  
pp. 243-247 ◽  
Author(s):  
H. Moualkia ◽  
S. Hariech ◽  
M.S. Aida
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Bath Temperature ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Cds Thin Films ◽  
Direct Band

The present work deals with the preparation and characterization of cadmium sulfur (CdS) thin films. These films are prepared by chemical bath deposition on the well cleaned glass substrates. The thickness of the samples was measured by using profilometer DEKTAK, structural and optical properties were studied by X-ray diffraction analysis, and UV-visible spectrophotometry. The optical properties of the films have been investigated as a function of temperature. The band gap energy and Urbach energy were also investigated as a function of temperature. From the transmittance data analysis the direct band gap ranges from 2.21 eV to 2.34 eV. A dependence of band gap on temperature has been observed and the possible raisons are discussed. Transmission spectra indicates a high transmission coefficient (75 %). Structural analysis revealed that the films showed cubic structure, and the crystallite size decreased at a higher deposition temperature.

scholarly journals Optical Properties of \(\text{CuInS}_{2}\) Thin Films Prepared by Spray Pyrolysis

2012 ◽  
Vol 22 (1) ◽  
pp. 59-64 ◽  
Author(s):  
Tran Thanh Thai ◽  
Pham Phi Hung ◽  
Vo Thach Son ◽  
Vu Thi Bich
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Copper Chloride ◽  
Solar Spectrum ◽  
Molar Ratio ◽  
Spray Parameters ◽  
Indium Chloride ◽  
Glass Substrates

Polycrystalline CuInS\(_{2}\) (CIS) absorber films for solar cells were prepared by spray pyrolysis of aqueuos solution of copper chloride, indium chloride and thiourea onto heated glass substrates. By optimizing the spray parameters, such as reducing/increasing the temperature of the substrate and molar ratio of Cu/In in the spraying solution, the optical characteristics of films, which are well matched to the solar spectrum, were identified. In all cases, those CIS thin films were of p-type conductivity. Transmission measurements were performed to examine the optical properties of the films; the absorption coefficient and the optical band gap of the films were calculated by transmission spectra. The absorption spectra of the films showed that this compound is a direct band gap one and its gap varied between 1.30 - 1.78 eV. Those thin films were analyzed by X-ray diffraction in order to understand the effect of layers structure on their optical properties.

Properties of TiO2 Thin Film Prepared by Sol-Gel Dip Coating

2015 ◽  
Vol 723 ◽  
pp. 528-531
Author(s):  
Jun Wang ◽  
Ling Yun Bai
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Dip Coating ◽  
Gel Method ◽  
Glass Substrates

TiO2 thin films were prepared on glass substrates by sol-gel method. The effect of withdraw speed on the thickness and optical properties of TiO2 thin films was investigated. The films were transparent in the visible wavelength. The thickness of the TiO2 films was increased from 90 nm for the withdraw speed of 1000 μm/s to 160 nm for the withdraw speed of 2000 μm/s. While, The refractive index of the TiO2 thin film decreased from 2.38 to 2.07. It may be due to the porosity of the film was increased. The optical band-gap of the films was around 3.45 eV.

Structural and electrical study of BLT thin film deposited on different substrates by electron gun evaporation

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
B. Abdallah ◽  
F. Nasrallah ◽  
W. Tabbky
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Ferroelectric Properties ◽  
Electron Gun ◽  
High Deposition Rate ◽  
Content Type ◽  
Glass Substrates ◽  
Evaporation Technique

Purpose The purpose of this study was to deposit Bi4Ti3O12 films by electron gun evaporation technique starting from Bi3.25La0.75Ti3O12 as a target without annealing. The films have been deposited on Si(100), on thin film buffer layer of Pt and glass substrates. X-ray diffraction (XRD) was used to analyze structure of the films, which possesses a good structure with (0010) preferred orientation. Electronic behavior of the samples has been studied. Design/methodology/approach The dependence of both the structure and quality of the BLT thin films on different substrates is studied using XRD. The electrical characteristics were determined using capacitance–voltage (C–V) and current–voltage (I–V) measurements at the frequency of 1 MHz. Optical properties of the grown films deposited on glass substrates were characterized by optical transmittance measurements (UV-Vis). Findings The XRD analysis approved the crystallographer structure of the prepared Bi4Ti3O12 films. The optical properties of deposited film (transmittance and the band gap value) are extracted by UV-Vis spectrum. Originality/value High crystalline quality Bi4Ti3O12 films have been obtained using different substrates at room temperature by means of electron gun deposition. The electrical and ferroelectric properties of thin films were studied using I–V and C–V measurements. The band gap has been found to be about 3.62 eV for the studied film deposited on glass substrate. Electron beam evaporation technique is the most interesting methods, once considering many advantages; such as its stability, reproducibility, high deposition rate and the compositions of the films are controlled.

scholarly journals Temperature effect on structural and optical properties of V2O5 thin films prepared by spray pyrolysis technique

2020 ◽  
Vol 307 ◽  
pp. 01033
Author(s):  
Asmaa Mrigal ◽  
Lahocine El Gana ◽  
Mouhamed Addou ◽  
Khadija Bahedi ◽  
Rajae Temsamani ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Energy Gap ◽  
Spray Pyrolysis Technique ◽  
Three Dimensional ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Optical Dielectric Constant

In this work, the effect of substrate temperature on structural and optical properties of V2O5 thin films has been characterized by X-ray diffraction (XRD); SEM and transmission. The films mince has been prepared by Reactive Chemical Spraying technology in Liquid Phase (RCSLP) on glass substrates preheated at (350, 400, 450 and 500 °C). The X-ray diffraction analysis confirms that all layers are polycrystalline, and the preferred orientation of V2O5 is the (001) plane. The morphology of V2O5 thin films are porous nature and their particle’s shape is three-dimensional. The transmittance and absorbance of thin film were measured from which the optical constants (Energy gap, Refractive index, Absorption coefficient, Extinction coefficient and Optical dielectric constant) were determined.

scholarly journals Studies on the Structural and Optical Properties of AgIn1-XGaXSe2 (0 ≤ x ≤ 1.0) thin Films

1970 ◽  
Vol 33 (2) ◽  
pp. 151-157 ◽  
Author(s):  
FA Chowdhury ◽  
J Begum ◽  
L Quadir ◽  
SM Firoz Hasan
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Optical Transmittance ◽  
Band Gap Energy ◽  
Structural And Optical Properties ◽  
Absorption Region ◽  
Transmittance Spectra ◽  
Gap Energy ◽  
Glass Substrates

Polycrystalline thin films of AgIn1-XGaXSe2 (AIGS) with varying x (0 ≤ x ≤ 1.0) have been grown onto glass substrates by stacked elemental layer (SEL) deposition technique in vacuum (~10-6 mbar). The thickness of the films was kept constant at 500 nm measured on line by frequency shift of quartz crystal. The films were annealed in situ at 300°C for 15 minutes. Structural and optical properties of the films were ascertained by X-ray diffraction (XRD) and UV-VIS-NIR spectrophotometry (photon wavelength ranging between 300 and 2500 nm) respectively. The diffractogram indicates that these films are polycrystalline in nature. The optical transmittance spectra reveal a maximum transmission of 85.91% around 1100 nm of wavelength for x = 0.2. A sharp absorption region is evident from the transmittance spectra that indicate a standard semiconducting nature of the films. The abruptness at the fundamental edge is more distinct in the film with x = 0.2. Optical transmittance, reflectance and thickness of the films were utilized to compute the absorption coefficient, band gap energy and refractive index of the films. The optical band gap is found to be direct-allowed. The band gap energy value, found from this study ranging between 2.3 to 2.4 eV, is very close for different gallium content films. The refractive indices increase almost linearly with photon wavelength range between 1300 and 1500 nm. DOI: 10.3329/jbas.v33i2.4098 Journal of Bangladesh Academy of Sciences, Vol. 33, No. 2, 151-157, 2009

scholarly journals The effect of heat treatment on the optical properties of organic semiconductor (NiPc/C60) thin films

2019 ◽  
Vol 16 (39) ◽  
pp. 33-41
Author(s):  
Atheer M. Mkhaiber
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Optical Properties ◽  
Optical Absorption ◽  
Annealing Temperature ◽  
Energy Gap ◽  
Optical Absorption Spectra ◽  
Optical Energy Gap ◽  
Optical Energy ◽  
Glass Substrates

Thin films of the blended solution of (NiPc/C60) on glass substrates were prepared by spin-coated method for three different ratios (100/1, 100/10 and 100/100). The effects of annealing temperature and C60 concentration on the optical properties of the samples were studied using the UV-Vis absorption spectroscopy and FTIR spectra. The optical absorption spectrum consists of two main bands, Q and B band, with maxima at about (602-632) nm and (700-730) nm for Q1 and Q2 respectively, and (340-375) nm for B band. The optical energy gap were determined from optical absorption spectra, The variation of optical energy gap with annealing temperature was nonsystematic and this may be due to the improvement in crystal structure for thin films. While the energy gap decreased by increasing the concentration of C60 approaches from the energy gap of this compound.

scholarly journals Optical Properties of Al- and Sb-Doped CdTe Thin Films

2010 ◽  
Vol 2010 ◽  
pp. 1-5 ◽  
Author(s):  
A. A. J. Al-Douri ◽  
F. Y. Al-Shakily ◽  
M. F. A. Alias ◽  
A. A. Alnajjar
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Room Temperature ◽  
Optical Transition ◽  
Coefficient Increase ◽  
Evaporation Technique ◽  
Direct Optical Transition ◽  
Cdte Thin Films ◽  
Substrate Temperatures

Nondoped and (Al, Sb)-doped CdTe thin films with 0.5, 1.5, and 2.5  wt.%, respectively, were deposited by thermal evaporation technique under vacuum onto Corning 7059 glass at substrate temperatures () of room temperature (RT) and 423 K. The optical properties of deposited CdTe films such as band gap, refractive index (n), extinction coefficient (), and dielectric coefficients were investigated as function of Al and Sb wt.% doping, respectively. The results showed that films have direct optical transition. Increasing and the wt.% of both types of dopant, the band gap decrease but the optical is constant asn, and real and imaginary parts of the dielectric coefficient increase.

scholarly journals Structural and optical properties of Co and Ni doped ZnO thin films prepared by RF magnetron sputtering

2017 ◽  
Vol 18 (3) ◽  
pp. 302-308 ◽  
Author(s):  
I.D. Stolyarchuk ◽  
G.I. Kleto ◽  
A. Dziedzic
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Optical Absorption ◽  
Surface Morphology ◽  
Band Gap ◽  
Energy Band ◽  
Zno Thin Films ◽  
Optical Absorption Spectra ◽  
Energy Band Gap ◽  
Structural And Optical Properties

We have reported the effect of Co and Ni doping on structural and optical properties of ZnO thin films prepared by RF reactive sputtering technique. The composite targets were formed by mixing and pressing of ZnO, Mn3O4, CoO and NiO powders. The thin films were deposited on sapphire, quartz and glass substrates. The structure study confirms the formation of the hexagonal wurtzite ZnO without any secondary phase in transition metal (Co, Ni) - doped samples. Cross-sectional TEM images of all studied samples show a denseand uniformly textured structure composed of column-like structure along the growth direction. The surface morphology of the thin films was studied using atomic force microscopy (AFM). Different surface morphology (AFM) images were obtained depending on the film composition and growth conditions. Optical absorption spectra suggest of substitution Zn2+ ions in ZnO lattice by transition metal atoms. The shift of the absorption edge due to decrease the energy band gap with increasing cobalt content and complex dependence of the energy band gap on content of nickel was observed in optical absorption spectra of the studied films. The room temperature photoluminescence peaks are attributed to near band gap emission and vacancy or defect states.

Sign in / Sign up

Export Citation Format

Share Document