scholarly journals The Si Nanocrystal Trap Center Studied by Deep Level Transient Spectroscopy (DLTS)

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Tiezheng Lv ◽  
Lili Zhao
Keyword(s):  
Cross Section ◽  
High Frequency ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Single Point ◽  
Deep Level Defect ◽  
Trapping Mechanism ◽  
Si Nanocrystal ◽  
Transient Spectroscopy ◽  
The Individual

Si nanocrystal (NC) embedded into the SiO2matrix was made by SiO/SiO2superlattice method. Here we investigate the storage phenomena of MOS structure having Si NC inside the dielectric layer by high frequencyC-Vmethod and DLTS. DLTS treated the individual Si NC as a single point deep level defect in the oxide and revealed essences of Si NC storage, such as a large capture cross section at about 1–7 × 10−13 cm2and potential barrier at about 1.6 eV. These two properties we observed are consistent with Si NC dimensions of 5–7 nm in the planar TEM image, and previousI-Vcharacterization in the MOS-like structure. These results are helpful to understand the principle of charge storage of this structure and optimize the performance of real Si NC device. The trapping mechanism in MOS systems containing Si NCs is related to the quantum levels of the Si NC band structure at around 300 K.

Effect of Sacrificial AlN (Aluminum Nitride) Layer on the Deep Surface States of 4H-SiC

2021 ◽  
Vol 21 (3) ◽  
pp. 1904-1908
Author(s):  
Woo-Young Son ◽  
Jeong Hyun Moon ◽  
Wook Bahng ◽  
Sang-Mo Koo
Keyword(s):  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Surface States ◽  
Nitride Layer ◽  
Double Negative ◽  
Capture Cross ◽  
Trap Energy ◽  
Transient Spectroscopy

We investigated the effect of a sacrificial AlN layer on the deep energy level states of 4H-SiC surface. The samples with and without AlN layer have been annealed at 1300 °C for 30 minutes duration using a tube furnace. After annealing the samples, the changes of the carbon vacancy (VC) related Z1/2 defect characteristics were analyzed by deep level transient spectroscopy. The trap energy associated with double negative acceptor (VC(2-/0)) appears at ˜0.7 eV and was reduced from ˜0.687 to ˜0.582 eV in the sacrificial AlN layer samples. In addition, the capture cross section was significantly improved from ˜2.1×10-14 to ˜3.8×10−16 cm−2 and the trap concentration was reduced by approximately 40 times.

Meyer-Neldel Rule in Deep-Level-Transient-Spectroscopy and its Ramifications

2003 ◽  
Vol 763 ◽  
Author(s):  
Richard S. Crandall
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Capture Cross ◽  
Emission Data ◽  
The Cross ◽  
Transient Spectroscopy ◽  
Capture Cross Sections

AbstractThis paper presents data showing a Meyer-Neldel rule (MNR) in InGaAsN alloys. It is shown that without this knowledge, significant errors will be made using Deep-Level Transient-Spectroscopy (DLTS) emission data to determine capture cross sections. By correctly accounting for the MNR in analyzing the DLTS data the correct value of the cross section is obtained.

DLTS Study on Al+ Ion Implanted and 1950°C Annealed p-i-n 4H-SiC Vertical Diodes

2017 ◽  
Vol 897 ◽  
pp. 279-282 ◽  
Author(s):  
Hussein M. Ayedh ◽  
Maurizio Puzzanghera ◽  
Bengt Gunnar Svensson ◽  
Roberta Nipoti
Keyword(s):  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Electron Trap ◽  
Double Negative ◽  
Capture Cross ◽  
Carrier Traps ◽  
Transient Spectroscopy ◽  
Post Implantation

A vertical 4H-SiC p-i-n diode with 2×1020cm-3 Al+ implanted emitter and 1950°C/5min post implantation annealing has been characterized by deep level transient spectroscopy (DLTS). Majority (electron) and minority (hole) carrier traps have been found. Electron traps with a homogeneous depth profile, are positioned at 0.16, 0.67 and 1.5 eV below the minimum edge of the conduction band, and have 3×10-15, 1.7×1014, and 1.8×10-14 cm2 capture cross section, respectively. A hole trap decreasing in intensity with decreasing pulse voltage occurs at 0.35 eV above the maximum edge of the valence band with 1×1013 cm2 apparent capture cross section. The highest density is observed for the refractory 0.67 eV electron trap that is due to the double negative acceptor states of the carbon vacancy.

Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States

2010 ◽  
Vol 645-648 ◽  
pp. 499-502 ◽  
Author(s):  
Alberto F. Basile ◽  
John Rozen ◽  
X.D. Chen ◽  
Sarit Dhar ◽  
John R. Williams ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Capture Cross ◽  
Temperature Dependent ◽  
Band Energy ◽  
Transient Spectroscopy ◽  
Semiconductor Traps

The electrical properties of the SiC/SiO2 interface resulting from oxidation of the n-type 6H-SiC polytype were studied by hi-lo CV, temperature dependent CV and constant capacitance deep level transient spectroscopy (CCDLTS) techniques. Several trap species differing in energy and capture cross section were identified. A trap distribution at 0.5 eV below the 6H-SiC conduction band energy and a shallower density of states in both the 6H and 4H polytyes are passivated by post-oxidation NO annealing. However, other ultra-shallow and deeper defect distributions remain after nitridation. The latter may originate from semiconductor traps.

DLTS Studies of Al Diffused n-Si

2010 ◽  
Vol 442 ◽  
pp. 393-397
Author(s):  
S. Siddique ◽  
M.M. Asim ◽  
F. Saleemi ◽  
S. Naseem
Keyword(s):  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Dlts Spectrum ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Junction Formation ◽  
Transient Spectroscopy ◽  
Phosphorus Doped ◽  
Si Wafer

We have studied the electrical properties of Si p-n junction diodes by deep level transient spectroscopy (DLTS) measurements. The p-n junctions were developed on a Phosphorus doped Si by depositing Al and annealing at various temperatures. In order to confirm junction formation, current-voltage and capacitance-voltage measurements were made. Two deep levels at Ec-0.17 eV (E1) and Ec-0.44 eV (E2) were observed in the DLTS spectrum. These traps have been characterized by their capture cross-section, activation energy level and trap density. On the basis of these parameters, level E1 can be assigned as V-O complex and E2 as P-V complex. These traps are related to the growth of n-Si wafer and not due to Al diffusion.

Deep Levels in As-Grown and Electron-Irradiated P-type 4H-SiC

2006 ◽  
Vol 911 ◽  
Author(s):  
Katsunori Danno ◽  
Tsunenobu Kimoto
Keyword(s):  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Arrhenius Plot ◽  
Deep Level ◽  
Deep Levels ◽  
Emission Time ◽  
Transient Spectroscopy ◽  
P Type ◽  
Thermal Stability Of

AbstractDeep levels in as-grown and electron-irradiated p-type 4H-SiC have been investigated by deep level transient spectroscopy (DLTS). Three hole traps, namely HK2, HK3, and HK4, could be detected in the temperature range from 350K to 700K. Activation energies of the hole traps were estimated to be 0.84 eV for HK2, 1.27 eV for HK3, and 1.44 eV for HK4 from the Arrhenius plot of emission-time constants assuming temperature-independent capture cross section. By double-correlated DLTS (DDLTS), they were revealed to be donor-like (+/0) traps. The concentrations of HK3 and HK4 centers were clearly increased by low-energy (116 keV) electron irradiation. Based on thermal stability of the HK3 and HK4 centers up to 1350°C and the dependence of HK4 concentration on the electron fluence, they may originate from a complex including defect(s) caused by carbon displacement.

Defect Levels in the Near-Surface Region of 2.0 MeV 16O+ Ion Implanted n-GaAs.

1989 ◽  
Vol 163 ◽  
Author(s):  
C.C. Tin ◽  
P.A. Barnes ◽  
T.T. Bardin ◽  
J.G. Pronko
Keyword(s):  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Surface Region ◽  
Conduction Band Edge ◽  
Defect Structures ◽  
Near Surface ◽  
Defect Levels ◽  
Transient Spectroscopy ◽  
Different Doses

AbstractMeV ion implantation in GaAs is known to cause amorphization of the region at the end of the ion range. The near-surface region, however, is still crystalline albeit heavily compensated. We have carried out deep level transient spectroscopy (DLTS) studies of the defect levels in the near—surface region of n—GaAs samples implanted with different doses of 2.0 MeV 16O+ ions.A comparison between the defect structures in the original and the implanted samples shows that implantation produced a broad range of defect levels ranging from 0.58 to 0.3 eV from the conduction band edge. This broad range of defects has an unusually large capture cross—section. The intensities of the DLTS peaks increase with the dose of 160+ ions. The presence of EL2, which was present in the original samples, was not observed in the implanted samples.Results from measurements made on samples that have been implanted at 200°C and on implanted samples subjected to rapid thermal annealing will also be discussed.

Transition Metal Contamination of Epitaxial Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
Martin P. Scott ◽  
L. Caubin ◽  
D. C. Chen ◽  
E. R. Weber ◽  
J. Rose ◽  
...  
Keyword(s):  
Transition Metal ◽  
Epitaxial Growth ◽  
Growth Condition ◽  
Deep Level Transient Spectroscopy ◽  
Metal Contamination ◽  
Deep Level ◽  
Oxygen Level ◽  
Epitaxial Silicon ◽  
Deep Level Defect ◽  
Transient Spectroscopy

ABSTRACTDeep level defects in p/p+ epitaxial silicon were characterized by deep level transient spectroscopy (DLTS). Two dominant deep level defects were found in all samples which have been identified with Fe and CrB pairs. A third deep level defect was found in most of the samples which has tentatively been identified with Ti. The concentrations of these traps were established in a large number of samples as a function of epitaxial growth condition and substrate oxygen level.

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