DLTS Studies of Al Diffused n-Si

2010 ◽  
Vol 442 ◽  
pp. 393-397
Author(s):  
S. Siddique ◽  
M.M. Asim ◽  
F. Saleemi ◽  
S. Naseem
Keyword(s):  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Dlts Spectrum ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Junction Formation ◽  
Transient Spectroscopy ◽  
Phosphorus Doped ◽  
Si Wafer

We have studied the electrical properties of Si p-n junction diodes by deep level transient spectroscopy (DLTS) measurements. The p-n junctions were developed on a Phosphorus doped Si by depositing Al and annealing at various temperatures. In order to confirm junction formation, current-voltage and capacitance-voltage measurements were made. Two deep levels at Ec-0.17 eV (E1) and Ec-0.44 eV (E2) were observed in the DLTS spectrum. These traps have been characterized by their capture cross-section, activation energy level and trap density. On the basis of these parameters, level E1 can be assigned as V-O complex and E2 as P-V complex. These traps are related to the growth of n-Si wafer and not due to Al diffusion.

scholarly journals Current--Voltage, Capacitance--Voltage--Temperature, and DLTS Studies of Ni|6H-SiC Schottky Diode

2021 ◽  
Vol 55 (4) ◽  
pp. 388
Author(s):  
A. Rabehi ◽  
B. Akkal ◽  
M. Amrani ◽  
S. Tizi ◽  
Z. Benamara ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Diodes ◽  
Double Barrier ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Transient Spectroscopy

In this paper, we give a systematical description of Ni|6H-SiC Schottky diode by current--voltage I(V) characteristics at room temperature and capacitance--voltage C(V) characteristics at various frequencies (10-800 kHz) and various temperatures (77-350oK). The I(V) characteristics show a double-barrier phenomenon, which gives a low and high barrier height (phiLbn=0.91 eV, phiHbn=1.55 eV), with a difference of Deltaphibn=0.64 eV. Also, low ideality factor nL=1.94 and high ideality factor nH=1.22 are obtained. The C-V-T measurements show that the barrier height phibn decreases with decreasing of temperature and gives a temperature coefficient alpha=1.0·10-3 eV/K and phibn(T=0 K)=1.32 eV. Deep-level transient spectroscopy (DLTS) has been used to investigate deep levels in the Ni|6H-SiC Schottky diode. The traps signatures such as activation energies Ea=0.50±0.07 eV, capture cross-section sigma=1.8·10-20 cm2, and defect concentration NT=6.2·1013 cm-3 were calculated from Arrhenius plots. Keywords: si1licon carbide, Schottky diodes, I-V, C-V-T, deep-level transient spectroscopy (DLTS).

Deep Level Defects in AlxGa1-xN/GaN Heterointerfaces Grown by Molecular Beam Epitaxy

2007 ◽  
Vol 124-126 ◽  
pp. 89-92
Author(s):  
Hee Chang Jeon ◽  
Chan Jin Park ◽  
Hoon Young Cho ◽  
Tae Won Kang ◽  
Tae Whan Kim ◽  
...  
Keyword(s):  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Electron Gas ◽  
Deep Levels ◽  
Dimensional Electron ◽  
Capacitance Voltage ◽  
Transient Spectroscopy ◽  
Dimensional Electron Gas

Capacitance-voltage (C-V) and Deep-level transient spectroscopy (DLTS) measurements on AlxGa1-xN/GaN heterostructures were performed to investigate the existence of the carriers and the behavior of the deep levels in the AlxGa1-xN/GaN heterointerface. The C-V depth profile showed that the carrier concentration existed at the AlxGa1-xN/GaN heterointerface was 4 × 1012 cm2. The DLTS results showed two deep levels. The capture cross-section of the deep level related to the two-dimensional electron gas decreased with increasing depth, resulting from the existence of the different deep levels in each region.

scholarly journals Влияние нейтронного облучения на спектр дефектов с глубокими уровнями в GaAs, изготовленном методом жидкофазной эпитаксии в атмосфере водорода и аргона

2022 ◽  
Vol 56 (1) ◽  
pp. 53
Author(s):  
М.М. Соболев ◽  
Ф.Ю. Солдатенков
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Experimental Studies ◽  
Shallow Donor ◽  
Defect Clusters ◽  
Deep Traps ◽  
Capacitance Voltage ◽  
Before And After ◽  
Transient Spectroscopy ◽  
Different Doses

The results of experimental studies of capacitance– voltage characteristics, spectra of deep-level transient spectroscopy of graded high-voltage GaAs p+−p0−i−n0 diodes fabricated by liquid-phase epitaxy at a crystallization temperature of 900C from one solution–melt due to autodoping with background impurities, in a hydrogen or argon ambient, before and after irradiation with neutrons. After neutron irradiation, deep-level transient spectroscopy spectra revealed wide zones of defect clusters with acceptor-like negatively charged traps in the n0-layer, which arise as a result of electron emission from states located above the middle of the band gap. It was found that the differences in capacitance–voltage characteristics of the structures grown in hydrogen or argon ambient after irradiation are due to different doses of irradiation of GaAs p+−p0−i−n0 structures and different degrees of compensation of shallow donor impurities by deep traps in the layers.

Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces

2011 ◽  
Vol 109 (6) ◽  
pp. 064514 ◽  
Author(s):  
A. F. Basile ◽  
J. Rozen ◽  
J. R. Williams ◽  
L. C. Feldman ◽  
P. M. Mooney
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Capacitance Voltage ◽  
Transient Spectroscopy

Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

2006 ◽  
Vol 957 ◽  
Author(s):  
Yahya Alivov ◽  
Xiao Bo ◽  
Fan Qian ◽  
Daniel Johnstone ◽  
Cole Litton ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Measured Temperature ◽  
Temperature Dependent ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTThe conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

Effect of Sacrificial AlN (Aluminum Nitride) Layer on the Deep Surface States of 4H-SiC

2021 ◽  
Vol 21 (3) ◽  
pp. 1904-1908
Author(s):  
Woo-Young Son ◽  
Jeong Hyun Moon ◽  
Wook Bahng ◽  
Sang-Mo Koo
Keyword(s):  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Surface States ◽  
Nitride Layer ◽  
Double Negative ◽  
Capture Cross ◽  
Trap Energy ◽  
Transient Spectroscopy

We investigated the effect of a sacrificial AlN layer on the deep energy level states of 4H-SiC surface. The samples with and without AlN layer have been annealed at 1300 °C for 30 minutes duration using a tube furnace. After annealing the samples, the changes of the carbon vacancy (VC) related Z1/2 defect characteristics were analyzed by deep level transient spectroscopy. The trap energy associated with double negative acceptor (VC(2-/0)) appears at ˜0.7 eV and was reduced from ˜0.687 to ˜0.582 eV in the sacrificial AlN layer samples. In addition, the capture cross section was significantly improved from ˜2.1×10-14 to ˜3.8×10−16 cm−2 and the trap concentration was reduced by approximately 40 times.

Electronic Properties of ZnO/Si Heterojunction Prepared by ALD.

2011 ◽  
Vol 178-179 ◽  
pp. 130-135 ◽  
Author(s):  
Vincent Quemener ◽  
Mari Alnes ◽  
Lasse Vines ◽  
Ola Nilsen ◽  
Helmer Fjellvåg ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Deep Level ◽  
Atomic Layer ◽  
Substantial Improvement ◽  
Conduction Band Edge ◽  
Energy Position ◽  
Layer Deposition ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Transient Spectroscopy

ZnO/n-Si and ZnO/p-Si heterostructures were prepared by Atomic layer deposition (ALD) and the electronic properties have been investigated by Current-Voltage (I-V), Capacitance-Voltage (C-V) and Deep level transient spectroscopy (DLTS) measurements. DLTS measurements show two dominants electron traps at the interface of the ZnO/n-Si junction with energy position at 0.07 eV and 0.15 eV below the conduction band edge, labelled E(0.07) and E(0.15), respectively, and no electrically active defects at the interface of the ZnO/p-Si junction. E(0.07) is reduced by annealing up to 400°C while E(0.15) is created at 500°C. The best heterostructure is found after heat treatment at 400°C with a substantial improvement of the current rectification for ZnO/n-Si and the formation of Ohmic contact on ZnO/p-Si. A reduction of the interface defects correlates with an improvement of the crystal structure of the ZnO film with a preferred orientation along the c-axis.

Formation of Intrinsic Defects at MBE-Grown GaAs/AlAs Interfaces

1993 ◽  
Vol 312 ◽  
Author(s):  
P. Krispin ◽  
R. Hey ◽  
H. Kostial ◽  
M. Höricke
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Depth Profiling ◽  
Intrinsic Defects ◽  
Capacitance Voltage ◽  
Charge States ◽  
Transient Spectroscopy ◽  
Silicon Doped ◽  
Arsenic Vacancy

AbstractWe report on a detailed investigation of MBE-grown isotype silicon-doped heterostructures by capacitance/voltage (C/V) technique and deep-level transient spectroscopy (DLTS). A sequence of electrically active defects is found. By depth profiling of the density of the dominant levels it is demonstrated that the corresponding defects are concentrated at the GaAs-on-AlAs (inverted) interface. By comparison with studies on irradiation-induced levels in LPE- or VPE-grown AlGaAs we conclude that the defects at the GaAs/AlAs interface are most probably linked to different charge states of the arsenic vacancy VAs and VAs−ASi pairs.

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