Si Substrate-Based Metamaterials for Ultrabroadband Perfect Absorption in Visible Regime

We report the broadband efficient light absorbing property of a structure of quadrangular frustum pyramid array in visible regime. The structure can absorb light efficiently with an average absorptivity of 0.98 over the whole visible waveband. In addition, it is found that this kind of super light absorbing can maintain an average of 0.9 for a wide incident angle range. The perfect absorbing property of the metamaterial-based nanoring array is attributed to the effect of the Fabry-Perot resonance. The structure is possible to be used as a type of Si photonics devices in future photonic circuits.

Download Full-text

Towards Perfect Absorption of Single Layer CVD Graphene in an Optical Resonant Cavity: Challenges and Experimental Achievements

Materials ◽

10.3390/ma15010352 ◽

2022 ◽

Vol 15 (1) ◽

pp. 352

Author(s):

Abedin Nematpour ◽

Maria Luisa Grilli ◽

Laura Lancellotti ◽

Nicola Lisi

Keyword(s):

Incident Angle ◽

Resonant Cavity ◽

Experimental Studies ◽

Single Layer ◽

Absorption Enhancement ◽

Perfect Absorption ◽

Cvd Graphene ◽

Graphene Layers ◽

Absorption Increase ◽

Fabry Perot

Graphene is emerging as a promising material for the integration in the most common Si platform, capable to convey some of its unique properties to fabricate novel photonic and optoelectronic devices. For many real functions and devices however, graphene absorption is too low and must be enhanced. Among strategies, the use of an optical resonant cavity was recently proposed, and graphene absorption enhancement was demonstrated, both, by theoretical and experimental studies. This paper summarizes our recent progress in graphene absorption enhancement by means of Si/SiO2-based Fabry–Perot filters fabricated by radiofrequency sputtering. Simulations and experimental achievements carried out during more than two years of investigations are reported here, detailing the technical expedients that were necessary to increase the single layer CVD graphene absorption first to 39% and then up to 84%. Graphene absorption increased when an asymmetric Fabry–Perot filter was applied rather than a symmetric one, and a further absorption increase was obtained when graphene was embedded in a reflective rather than a transmissive Fabry–Perot filter. Moreover, the effect of the incident angle of the electromagnetic radiation and of the polarization of the light was investigated in the case of the optimized reflective Fabry–Perot filter. Experimental challenges and precautions to avoid evaporation or sputtering induced damage on the graphene layers are described as well, disclosing some experimental procedures that may help other researchers to embed graphene inside PVD grown materials with minimal alterations.

Download Full-text

A Perfect Absorber Based on Similar Fabry-Perot Four-Band in the Visible Range

Nanomaterials ◽

10.3390/nano10030488 ◽

2020 ◽

Vol 10 (3) ◽

pp. 488 ◽

Cited By ~ 11

Author(s):

Pinghui Wu ◽

Congfen Zhang ◽

Yijun Tang ◽

Bin Liu ◽

Li Lv

Keyword(s):

Near Infrared ◽

Layer Structure ◽

Incident Angle ◽

Middle Layer ◽

Absorption Efficiency ◽

Visible Range ◽

Polarization Angle ◽

Perfect Absorber ◽

Perfect Absorption ◽

Fabry Perot

A simple metamaterial absorber is proposed to achieve near-perfect absorption in visible and near-infrared wavelengths. The absorber is composed of metal-dielectric-metal (MIM) three-layer structure. The materials of these three-layer structures are Au, SiO2, and Au. The top metal structure of the absorber is composed of hollow three-dimensional metal rings regularly arranged periodically. The results show that the high absorption efficiency at a specific wavelength is mainly due to the resonance of the Fabry–Perot effect (FP) in the intermediate layer of the dielectric medium, resulting in the resonance light being trapped in the middle layer, thus improving the absorption efficiency. The almost perfect multiband absorption, which is independent of polarization angle and insensitivity of incident angle, lends the absorber great application prospects for filtering and optoelectronics.

Download Full-text

Graphene-based dual-band near-perfect absorption in Rabi splitting between topological edge and Fabry-Perot cavity modes

Journal of Optics ◽

10.1088/2040-8986/ac34e2 ◽

2021 ◽

Author(s):

Tongtong Wei ◽

zengping su ◽

yueke wang

Keyword(s):

Strong Coupling ◽

Fermi Energy ◽

Incident Angle ◽

Optical Switches ◽

Dual Band ◽

Perfect Absorption ◽

Rabi Splitting ◽

Cavity Modes ◽

Fabry Perot ◽

Mode Tem

Abstract We propose a graphene embedded one-dimensional (1D) topological photonic crystal heterostructure, where the strong coupling occurs between the topological edge mode (TEM) and the Fabry-Perot cavity mode (CM). It is shown that the strong coupling leads to the hybridization between TEM and CM, with a Rabi splitting. Based on finite element method (FEM), a dual-band near-perfect absorption, which can be actively tuned by the Fermi energy of the graphene and incident angle, is found in the Rabi splitting region. Theoretically, the TEM-CM coupling can be analyzed by the classic oscillator model. In particular, when the Fermi energy of graphene slightly increases around 0.4 eV, the dual-band near-perfect absorption shows a rapid decrease from one to zero, which offers a possible way for absorption optical switches.

Download Full-text

Extraordinary Optical Transmission by Hybrid Phonon–Plasmon Polaritons Using hBN Embedded in Plasmonic Nanoslits

Nanomaterials ◽

10.3390/nano11061567 ◽

2021 ◽

Vol 11 (6) ◽

pp. 1567

Author(s):

Shinpei Ogawa ◽

Shoichiro Fukushima ◽

Masaaki Shimatani

Keyword(s):

Optical Transmission ◽

Hexagonal Boron Nitride ◽

Incident Angle ◽

Optical Filters ◽

Extraordinary Optical Transmission ◽

Light Manipulation ◽

Rigorous Coupled Wave Analysis ◽

Fabry Perot ◽

Hyperbolic Dispersion ◽

Rigorous Coupled Wave

Hexagonal boron nitride (hBN) exhibits natural hyperbolic dispersion in the infrared (IR) wavelength spectrum. In particular, the hybridization of its hyperbolic phonon polaritons (HPPs) and surface plasmon resonances (SPRs) induced by metallic nanostructures is expected to serve as a new platform for novel light manipulation. In this study, the transmission properties of embedded hBN in metallic one-dimensional (1D) nanoslits were theoretically investigated using a rigorous coupled wave analysis method. Extraordinary optical transmission (EOT) was observed in the type-II Reststrahlen band, which was attributed to the hybridization of HPPs in hBN and SPRs in 1D nanoslits. The calculated electric field distributions indicated that the unique Fabry–Pérot-like resonance was induced by the hybridization of HPPs and SPRs in an embedded hBN cavity. The trajectory of the confined light was a zigzag owing to the hyperbolicity of hBN, and its resonance number depended primarily on the aspect ratio of the 1D nanoslit. Such an EOT is also independent of the slit width and incident angle of light. These findings can not only assist in the development of improved strategies for the extreme confinement of IR light but may also be applied to ultrathin optical filters, advanced photodetectors, and optical devices.

Download Full-text

Compact InP-based 1×2 MMI splitter on Si substrate with BCB wafer bonding for membrane photonic circuits

2012 International Conference on Indium Phosphide and Related Materials ◽

10.1109/iciprm.2012.6403304 ◽

2012 ◽

Author(s):

Jieun Lee ◽

Yoshiaki Yamahara ◽

Yuki Atsumi ◽

Takahiko Shindo ◽

Tomohiro Amemiya ◽

...

Keyword(s):

Wafer Bonding ◽

Si Substrate ◽

Photonic Circuits

Download Full-text

Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

Applied Sciences ◽

10.3390/app11041801 ◽

2021 ◽

Vol 11 (4) ◽

pp. 1801

Author(s):

Takuro Fujii ◽

Tatsurou Hiraki ◽

Takuma Aihara ◽

Hidetaka Nishi ◽

Koji Takeda ◽

...

Keyword(s):

Quantum Wells ◽

Epitaxial Growth ◽

Heterogeneous Integration ◽

Selective Area Growth ◽

Si Substrate ◽

Growth Technique ◽

Si Photonics ◽

Selective Area ◽

Area Growth ◽

Indium Gallium

The rapid increase in total transmission capacity within and between data centers requires the construction of low-cost, high-capacity optical transmitters. Since a tremendous number of transmitters are required, photonic integrated circuits (PICs) using Si photonics technology enabling the integration of various functional devices on a single chip is a promising solution. A limitation of a Si-based PIC is the lack of an efficient light source due to the indirect bandgap of Si; therefore, hybrid integration technology of III-V semiconductor lasers on Si is desirable. The major challenges are that heterogeneous integration of III-V materials on Si induces the formation of dislocation at high process temperature; thus, the epitaxial regrowth process is difficult to apply. This paper reviews the evaluations conducted on our epitaxial growth technique using a directly bonded III-V membrane layer on a Si substrate. This technique enables epitaxial growth without the fundamental difficulties associated with lattice mismatch or anti-phase boundaries. In addition, crystal degradation correlating with the difference in thermal expansion is eliminated by keeping the total III-V layer thickness thinner than ~350 nm. As a result, various III-V photonic-device-fabrication technologies, such as buried regrowth, butt-joint regrowth, and selective area growth, can be applicable on the Si-photonics platform. We demonstrated the growth of indium-gallium-aluminum arsenide (InGaAlAs) multi-quantum wells (MQWs) and fabrication of lasers that exhibit >25 Gbit/s direct modulation with low energy cost. In addition, selective-area growth that enables the full O-band bandgap control of the MQW layer over the 150-nm range was demonstrated. We also fabricated indium-gallium-arsenide phosphide (InGaAsP) based phase modulators integrated with a distributed feedback laser. Therefore, the directly bonded III-V-on-Si substrate platform paves the way to manufacturing hybrid PICs for future data-center networks.

Download Full-text

Hybrid Metamaterials Perfect Absorber and Sensitive Sensor in Optical Communication Band

Frontiers in Physics ◽

10.3389/fphy.2021.637602 ◽

2021 ◽

Vol 9 ◽

Author(s):

Xuehan Liu ◽

Keyang Li ◽

Zhao Meng ◽

Zhun Zhang ◽

Zhongchao Wei

Keyword(s):

Optical Communication ◽

Electromagnetic Waves ◽

Incident Angle ◽

Silicon Layer ◽

Resonance Wavelength ◽

Metamaterial Absorber ◽

Absorption Peak ◽

Dual Band ◽

Perfect Absorber ◽

Perfect Absorption

A subwavelength metamaterial perfect absorber (MPA) in optical communication band was proposed and tested using the finite-difference time-domain method. The absorber is periodic and comprises a top layer of diamond silicon surrounded by L-shaped silicon and a gold layer on the substrate. It can achieve dual-band perfect absorption, and one of the peaks is in the optical communication band. By changing the gap (g) between two adjacent pieces of L-shaped silicon, and the thickness (h) of the silicon layer, the resonance wavelength of absorption peak can be tuned. When the incident electromagnetic wave entered the absorber, the metamaterial absorber could almost completely consume the incident electromagnetic waves, thereby achieving more than 99% perfect absorption. The absorption peak reaches 99.986% at 1310 nm and 99.421% at 1550 nm. Moreover, the MPA exposed to different ambient refraction indexes can be applied as plasma sensors, and can achieve multi-channel absorption with high figure of merit (FOM*) value and refractive index (RI) sensitivity. The FOM* values at 1310 nm and 1550 nm are 6615 and 168, respectively, and both resonance peaks have highly RI sensitivity. The results confirm that the MPA is a dual-band, polarization-independent, wide-angle absorber and insensitive to incident angle. Thence it can be applied in the fields of optical communication, used as a light-wave filter and plasma sensor, and so on.

Download Full-text

Research on Perfect and Tunable Metamaterial Absorber Based on Crosshair-shaped Graphene

Journal of Physics Conference Series ◽

10.1088/1742-6596/2109/1/012015 ◽

2021 ◽

Vol 2109 (1) ◽

pp. 012015

Author(s):

Yiran Guo ◽

Yunping Qi ◽

Chuqin Liu ◽

Weiming Liu ◽

Xiangxian Wang

Keyword(s):

Relaxation Time ◽

Chemical Potential ◽

Incident Angle ◽

Fdtd Method ◽

Reference Value ◽

Metamaterial Absorber ◽

Selective Absorption ◽

Perfect Absorber ◽

Wide Angle ◽

Perfect Absorption

Abstract Graphene, as a new nano-material, according to the physical properties of electric field localization and selective absorption on light of surface plasmon resonance (SPR), a tunable, multi-band and wide-angle perfect absorber based on crosshair-shaped graphene is devised by using the Finite Difference in Time Domain (FDTD) method. In this paper, the effects of chemical potential, relaxation time, and incident angle of light on the absorptivity of graphene are systematically discussed. The simulation experiment shows that there are two absorption peaks with perfect absorption rate appeared in the study range, and the maximum modulation index can be obtained by changing the relaxation time. Finally, it proves that the absorber is insensitive to wide-angle of light. Thus, it is able to be concluded that the absorber has a great reference value to sensor, wireless communication, biomedical and other fields.

Download Full-text

Wideband tunable perfect absorption of graphene plasmons via attenuated total reflection in Otto prism configuration

Nanophotonics ◽

10.1515/nanoph-2019-0400 ◽

2020 ◽

Vol 9 (3) ◽

pp. 645-655 ◽

Cited By ~ 3

Author(s):

Jinpeng Nong ◽

Linlong Tang ◽

Guilian Lan ◽

Peng Luo ◽

Caicheng Guo ◽

...

Keyword(s):

Graphene Nanoribbons ◽

Incident Angle ◽

Evanescent Waves ◽

Attenuated Total Reflection ◽

Absorption Properties ◽

Perfect Absorption ◽

Dielectric Spacer ◽

Graphene Plasmons ◽

Localized Plasmons ◽

Effective Degree

AbstractA strategy is proposed to achieve wideband tunable perfect plasmonic absorption in graphene nanoribbons by employing attenuated total refraction (ATR) in Otto prism configuration. In this configuration, the Otto prism with a deep-subwavelength dielectric spacer is used to generate tunneling evanescent waves to excite localized plasmons in graphene nanoribbons. The influence of the configuration parameters on the absorption spectra of graphene plasmons is studied systematically, and the key finding is that perfect absorption can be achieved by actively controlling the incident angle of light under ATR conditions, which provides an effective degree of freedom to tune the absorption properties of graphene plasmons. Based on this result, it is further demonstrated that by simultaneously tuning the incident angle and the graphene Fermi energy, the tunable absorption waveband can be significantly enlarged, which is about 3 times wider than the conventional cavity-enhanced configuration. Our proposed strategy to achieve wideband, tunable graphene plasmons could be useful in various infrared plasmonic devices.

Download Full-text