Electrical study of radiation hard designed HfO2-based 1T-1R RRAM devices

ABSTRACTIn this work the electrical performance of a radiation hard designed 1T-1R resistive random access memory (RRAM) device is investigated in DC (voltage sweep) and AC (pulsed voltage) modes. This new device is based on the combination of an Enclosed Layout Transistor (ELT) used as selector device and a TiN/ HfO2/ Ti/TiN RRAM stack used as resistive device. The high cell to cell variability in the DC mode makes it difficult to define an electrical gap between the High Resistive State (HRS) and the Low Resistive State (LRS). The strong reduction of the variability by the use of Incremental Step Pulse with Verify Algorithm (ISPVA) makes the later a mandatory programming approach. The Quantum Point Contact (QPC) model defines an energy barrier located in the rupture point of the filament in HRS. The compensation between the width and height variations of this barrier during cycling could explain the stability of HRS and LRS. The good performance of the proposed device using the ISPVA programming approach makes it a good candidate for Rad-Hard Non Volatile Memories integration.

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Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM

Discrete Dynamics in Nature and Society ◽

10.1155/2015/586842 ◽

2015 ◽

Vol 2015 ◽

pp. 1-6

Author(s):

Peng Hai-yun ◽

Zhou Wen-gang

Keyword(s):

Ion Mobility ◽

Nonvolatile Memory ◽

Low Cost ◽

Random Access ◽

Memory Device ◽

Resistive Random Access Memory ◽

Mobility Model ◽

Storage Device ◽

New Device ◽

Switching Matrix

There are high demands for research of new device with greater accessing speed and stability to replace the current SRAM storage cell. The resistive random access memory (ReRAM) is a metal oxide which is based on nonvolatile memory device possessing the characteristics of high read/write speed, high storage density, low power, low cost, very small cell, being nonvolatile, and unlimited writing endurance. The device has extreme short erasing time and the stored charge cannot be destroyed after power-off. Therefore, the ReRAM device is a significant storage device for many applications in the next generation. In this paper, we first explored the mechanism of the ReRAM device based on ion mobility model and then applied this device to optimize the design of FPGA switching matrix. The results show that it is beneficial to enhance the FPGA performance to replace traditional SRAM cells with ReRAM cells for the switching matrix.

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UV induced resistive switching in hybrid polymer metal oxide memristors

Scientific Reports ◽

10.1038/s41598-020-78102-x ◽

2020 ◽

Vol 10 (1) ◽

Author(s):

Spyros Stathopoulos ◽

Ioulia Tzouvadaki ◽

Themis Prodromakis

Keyword(s):

Metal Oxide ◽

Resistive Switching ◽

Random Access ◽

Resistive Random Access Memory ◽

Programming Approach ◽

Proof Of Concept ◽

Memristive Device ◽

Uv Illumination ◽

Polymer Metal ◽

Additional Stimulation

AbstractThere is an increasing interest for alternative ways to program memristive devices to arbitrary resistive levels. Among them, light-controlled programming approach, where optical input is used to improve or to promote the resistive switching, has drawn particular attention. Here, we present a straight-forward method to induce resistive switching to a memristive device, introducing a new version of a metal-oxide memristive architecture coupled with a UV-sensitive hybrid top electrode obtained through direct surface treatment with PEDOT:PSS of an established resistive random access memory platform. UV-illumination ultimately results to resistive switching, without involving any additional stimulation, and a relation between the switching magnitude and the applied wavelength is depicted. Overall, the system and method presented showcase a promising proof-of-concept for granting an exclusively light-triggered resistive switching to memristive devices irrespectively of the structure and materials comprising their main core, and, in perspective can be considered for functional integrations optical-induced sensing.

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Abnormal High Resistive State Current Mechanism Transformation in Ti/HfO2/TiN Resistive Random Access Memory

IEEE Electron Device Letters ◽

10.1109/led.2019.2961408 ◽

2020 ◽

Vol 41 (2) ◽

pp. 224-227 ◽

Cited By ~ 1

Author(s):

Kuan-Ju Zhou ◽

Ting-Chang Chang ◽

Chih-Yang Lin ◽

Chun-Kuei Chen ◽

Yi-Ting Tseng ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Resistive State ◽

Access Memory ◽

High Resistive State ◽

Current Mechanism

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Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays

Electronics ◽

10.3390/electronics9050864 ◽

2020 ◽

Vol 9 (5) ◽

pp. 864 ◽

Cited By ~ 1

Author(s):

Eduardo Pérez ◽

Óscar González Ossorio ◽

Salvador Dueñas ◽

Helena Castán ◽

Héctor García ◽

...

Keyword(s):

Pulse Width ◽

Random Access ◽

Endurance Performance ◽

Resistive Random Access Memory ◽

Low Energy ◽

Data Retention ◽

Endurance Test ◽

Access Memory ◽

Incremental Step ◽

Switching Stability

A crucial step in order to achieve fast and low-energy switching operations in resistive random access memory (RRAM) memories is the reduction of the programming pulse width. In this study, the incremental step pulse with verify algorithm (ISPVA) was implemented by using different pulse widths between 10 μ s and 50 ns and assessed on Al-doped HfO 2 4 kbit RRAM memory arrays. The switching stability was assessed by means of an endurance test of 1k cycles. Both conductive levels and voltages needed for switching showed a remarkable good behavior along 1k reset/set cycles regardless the programming pulse width implemented. Nevertheless, the distributions of voltages as well as the amount of energy required to carry out the switching operations were definitely affected by the value of the pulse width. In addition, the data retention was evaluated after the endurance analysis by annealing the RRAM devices at 150 °C along 100 h. Just an almost negligible increase on the rate of degradation of about 1 μ A at the end of the 100 h of annealing was reported between those samples programmed by employing a pulse width of 10 μ s and those employing 50 ns. Finally, an endurance performance of 200k cycles without any degradation was achieved on 128 RRAM devices by using programming pulses of 100 ns width.

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Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM

Materials ◽

10.3390/ma14123330 ◽

2021 ◽

Vol 14 (12) ◽

pp. 3330

Author(s):

Zhenzhong Zhang ◽

Fang Wang ◽

Kai Hu ◽

Yu She ◽

Sannian Song ◽

...

Keyword(s):

Resistive Switching ◽

Photoelectron Spectroscopy ◽

Oxygen Vacancies ◽

Random Access ◽

Chemical Vapor ◽

Response Speed ◽

Resistive Random Access Memory ◽

Fast Response ◽

Electrical Performance ◽

Pressure Chemical

In order to improve the electrical performance of resistive random access memory (RRAM), sulfur (S)-doping technology for HfOx-based RRAM is systematically investigated in this paper. HfOx films with different S-doping contents are achieved by atmospheric pressure chemical vapor deposition (APCVD) under a series of preparation temperatures. The effect of S on crystallinity, surface topography, element composition of HfOx thin films and resistive switching (RS) performance of HfOx-based devices are discussed. Compared with an undoped device, the VSET/VRESET of the S-doped device with optimal S content (~1.66 At.%) is reduced, and the compliance current (Icc) is limited from 1 mA to 100 μA. Moreover, it also has high uniformity of resistance and voltage, stable endurance, good retention characteristics, fast response speed (SET 6.25 μs/RESET 7.50 μs) and low energy consumption (SET 9.08 nJ/RESET 6.72 nJ). Based on X-ray photoelectron spectroscopy (XPS) data and fitting of the high/low resistance state (HRS/LRS) conduction behavior, a switching mechanism is considered to explain the formation and rupture of conductive filaments (CFs) composed of oxygen vacancies in undoped and S-doped HfOx-based devices. Doping by sulfur is proposed to introduce the appropriate concentration oxygen vacancies into HfOx film and suppress the random formation of CFs in HfOx-based device, and thus improve the performance of the TiN/HfOx/ITO device.

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Transformation of threshold volatile switching to quantum point contact originated nonvolatile switching in graphene interface controlled memory devices

Nanoscale Advances ◽

10.1039/c9na00409b ◽

2019 ◽

Vol 1 (9) ◽

pp. 3753-3760 ◽

Cited By ~ 9

Author(s):

Zuheng Wu ◽

Xiaolong Zhao ◽

Yang Yang ◽

Wei Wang ◽

Xumeng Zhang ◽

...

Keyword(s):

Nonvolatile Memory ◽

Point Contact ◽

Random Access ◽

Resistive Random Access Memory ◽

Quantum Point Contact ◽

Memory Devices ◽

Access Memory ◽

Memory Switching ◽

Graphene Interface ◽

Quantum Point

The use of a graphene interface as the cation barrier in Ag-based resistive random access memory devices can effectively change the volatile threshold selector behavior into nonvolatile memory switching.

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Effect of Ar-plasma treatment of ITO layer on resistive memory properties of a Ti/ITO point-contact structure

Modern Physics Letters B ◽

10.1142/s0217984919400426 ◽

2019 ◽

Vol 33 (14n15) ◽

pp. 1940042

Author(s):

Chih-Yi Liu ◽

Wan-We Chih ◽

Chao-Kai Weng ◽

Wei-Chen Tien ◽

Chang-Sin Ye

Keyword(s):

Plasma Treatment ◽

Point Contact ◽

Random Access ◽

High Resistance State ◽

Resistive Random Access Memory ◽

Text Structure ◽

Forming Process ◽

Metal Insulator Metal ◽

Resistance State ◽

Ar Plasma

A Ti/ITO structure was used as a point-contact resistive random access memory to simplify the procedures for conventional metal/insulator/metal structures. After the forming process, a [Formula: see text] interface was formed to fabricate a [Formula: see text] structure. The [Formula: see text] structure can be reversibly switched between a high-resistance state and a low-resistance state by using dc voltages at different polarities. The resistive switching was determined by the formation and rupture of oxygen-vacancy filaments. However, the high-forming current resulted in circuit design complexity and reliability concerns. An Ar-plasma treatment was adopted to modify the ITO surface. The Ar-plasma treatment lowered the forming current and improved memory reliability. The Ar-treated sample exhibited an endurance of more than 800 cycles through dc operation and a retention time longer than [Formula: see text] at [Formula: see text], making it suitable for nonvolatile memory applications.

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Reliability analysis and yield enhancement of resistive random access memory with adaptive incremental step pulse programming sizing

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ed15 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04ED15 ◽

Cited By ~ 1

Author(s):

Sang-Yun Kim ◽

Jong-Min Baek ◽

Dong-Jin Seo ◽

Jae-Koo Park ◽

Jung-Hoon Chun ◽

...

Keyword(s):

Reliability Analysis ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Yield Enhancement ◽

Access Memory ◽

Incremental Step

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Nanoscale Hafnium Oxide RRAM Devices Exhibit Pulse Dependent Behavior and Multi-level Resistance Capability

MRS Advances ◽

10.1557/adv.2016.377 ◽

2016 ◽

Vol 1 (49) ◽

pp. 3355-3360 ◽

Cited By ~ 32

Author(s):

Karsten Beckmann ◽

Josh Holt ◽

Harika Manem ◽

Joseph Van Nostrand ◽

Nathaniel C. Cady

Keyword(s):

Hafnium Oxide ◽

Random Access ◽

Electrical Characterization ◽

Resistive Random Access Memory ◽

Resistive State ◽

Network Computing ◽

Peak Voltage ◽

Peak Current ◽

Current Limit ◽

Reset Operation

ABSTRACTResistive Random Access Memory (RRAM) is a novel form of non-volatile memory that is expected to play a major role in future computing and memory solutions. It has been shown that the resistance of RRAM devices can be precisely tuned by modulating switching voltages, by limiting peak current, and by adjusting the switching pulse duration. This enables the realization of novel applications such as memristive neuromorphic computing and neural network computing. The RRAM devices described in this work utilize an inert tungsten bottom electrode, hafnium oxide based active switching layer, a titanium oxygen exchange layer, and an inert titanium nitride top electrode. Linear sweep and controlled pulse (down to 10 ns) based electrical characterization of RRAM devices was performed in a 1 transistor 1 RRAM (1T1R) configuration to determine endurance, reliability, retention and threshold voltage parameters. We demonstrated endurance values above 108cycles with an average on/off ratio of 15 and pulse voltages for set/reset operation of ±1.5V. The on-chip 1T1R structures show an excellent controllability with respect to the low and high resistive state by manipulating the peak current from 75 up to 350µA we were able to achieve 10 discrete resistive states. Our results demonstrate that the set operation (which shifts the RRAM device from the high to the low resistance state) is only dependent on the voltage of the switching pulse and the peak current limit. The reset operation, however, occurs in an analog fashion and appears to be dependent on the total energy of the applied switching pulse. Pulse energy was modulated by varying the peak voltage which resulted in a larger relative change of the RRAM device resistance.

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